N. Ronchi

1.5k citations

66 papers · 1.2k indexed · h-index 19

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 33
- GaN-based semiconductor devices and materials 33
Electrical and Electronic Engineering 63
- Semiconductor materials and devices 50
- Ferroelectric and Negative Capacitance Devices 31
- Advanced Memory and Neural Computing 13
- Silicon Carbide Semiconductor Technologies 13
- Advancements in Semiconductor Devices and Circuit Design 8

Co-authors: Stefaan Decoutere (23 shared papers)Enrico Zanoni (12 shared papers)Gaudenzio Meneghesso (11 shared papers)Antonio Stocco (10 shared papers)Matteo Meneghini (11 shared papers)Steve Stoffels (16 shared papers)Shuzhen You (12 shared papers)Benoit Bakeroot (12 shared papers)
Journals: IEEE Transactions on Electron Devices (11 papers)IEEE Electron Device Letters (3 papers)Applied Physics Letters (3 papers)Japanese Journal of Applied Physics (2 papers)IEEE Journal of the Electron Devices Society (2 papers)
Partner nations: Belgium Italy Taiwan

In The Last Decade

N. Ronchi

63 papers receiving 1.2k citations

Peers

Countries citing papers authored by N. Ronchi

Since Specialization

Citations

This map shows the geographic impact of N. Ronchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Ronchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Ronchi more than expected).

Fields of papers citing papers by N. Ronchi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Ronchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Ronchi. The network helps show where N. Ronchi may publish in the future.

Co-authors

The 25 scholars most cited alongside N. Ronchi, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with N. Ronchi Line = papers co-authored together N. Ronchi links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 66 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method IEEE Transactions on Electron Devices ·Matteo Meneghini, N. Ronchi, Antonio Stocco, Gaudenzio Meneghesso, Umesh K. Mishra, Yi Pei, Enrico Zanoni	2011	134
2	Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures IEEE Electron Device Letters ·Tian‐Li Wu, Benoit Bakeroot, Hu Liang, Niels Posthuma, Shuzhen You, N. Ronchi, Steve Stoffels, Denis Marcon, Stefaan Decoutere	2017	100
3	An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology Niels Posthuma, Shuzhen You, Steve Stoffels, D. Wellekens, H. Liang, Ming Zhao, Brice De Jaeger, Karen Geens, N. Ronchi, Stefaan Decoutere, P. Moens, Abhishek Banerjee, H. Ziad, M. Tack	2018	95
4	Reliability issues of Gallium Nitride High Electron Mobility Transistors International Journal of Microwave and Wireless Technologies ·Gaudenzio Meneghesso, Matteo Meneghini, Augusto Tazzoli, N. Ronchi, Antonio Stocco, Alessandro Chini, Enrico Zanoni	2010	87
5	Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance Niels Posthuma, Shuzhen You, H. Liang, N. Ronchi, Xuanwu Kang, D. Wellekens, Y. N. Saripalli, Stefaan Decoutere	2016	78
6	Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate IEEE Transactions on Electron Devices ·Jie Hu, Steve Stoffels, Silvia Lenci, Benoit Bakeroot, Brice De Jaeger, M. Van Hove, N. Ronchi, R. Venegas, Hu Liang, Ming Zhao, G. Groeseneken, Stefaan Decoutere	2016	70
7	Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics IEEE Transactions on Electron Devices ·M. Van Hove, Xuanwu Kang, Steve Stoffels, D. Wellekens, N. Ronchi, R. Venegas, Karen Geens, Stefaan Decoutere	2013	59
8	Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors Applied Physics Letters ·Matteo Meneghini, Antonio Stocco, N. Ronchi, Francesca Rossi, G. Salviati, Gaudenzio Meneghesso, Enrico Zanoni	2010	43
9	Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination IEEE Transactions on Electron Devices ·Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, N. Ronchi, Andrea Natale Tallarico, D. Wellekens, Shuzhen You, Benoit Bakeroot, G. Groeseneken, Stefaan Decoutere	2016	39
10	Investigation of Imprint in FE-HfO₂ and Its Recovery IEEE Transactions on Electron Devices ·Y. Higashi, B. Kaczer, Anne S. Verhulst, Barry O’Sullivan, N. Ronchi, S. R. C. McMitchell, Kaustuv Banerjee, Luca Piazza, Masatoshi Suzuki, D. Linten, Jan Van Houdt	2020	35
11	Impact of Charge trapping on Imprint and its Recovery in HfO₂ based FeFET Y. Higashi, N. Ronchi, B. Kaczer, Kaustuv Banerjee, S. R. C. McMitchell, (unknown), Sergiu Clima, Albert Minj, Umberto Celano, Luca Piazza, Masatoshi Suzuki, D. Linten, Jan Van Houdt	2019	34
12	Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs IRIS UNIMORE (University of Modena and Reggio Emilia) ·Alessandro Chini, F. Fantini, Valerio Di Lecce, Michele Esposto, Antonio Stocco, N. Ronchi, Franco Zanon, Gaudenzio Meneghesso, Enrico Zanoni	2009	32
13	Analog In-memory Computing in FeFET-based 1T1R Array for Edge AI Applications D. Saito, Toru Kobayashi, H. Koga, N. Ronchi, Kaustuv Banerjee, Y. Shuto, J. Okuno, Kazuo Konishi, Luca Piazza, A. Mallik, Jeroen Van Houdt, Masahiko Tsukamoto, K. Ohkuri, T. Umebayashi, Tohru Ezaki	2021	30
14	Defect profiling in FEFET Si:HfO2 layers Applied Physics Letters ·Barry O’Sullivan, V. Putcha, Roman Izmailov, V. V. Afanas’ev, Eddy Simoen, Taehwan Jung, Y. Higashi, R. Degraeve, B. Truijen, B. Kaczer, N. Ronchi, S. R. C. McMitchell, Kaustuv Banerjee, Sergiu Clima, L. Breuil, G. Van den bosch, D. Linten, Jan Van Houdt	2020	25
15	Reliability Improvements in AlGaN/GaN Schottky Barrier Diodes With a Gated Edge Termination IEEE Transactions on Electron Devices ·Eliana Acurio, Felice Crupi, N. Ronchi, Brice De Jaeger, Benoit Bakeroot, Stefaan Decoutere, Lionel Trojman	2018	22
16	Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes Microelectronics Reliability ·Jie Hu, Steve Stoffels, Silvia Lenci, N. Ronchi, R. Venegas, Shuzhen You, Benoit Bakeroot, G. Groeseneken, Stefaan Decoutere	2014	19
17	Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia Applied Physics Letters ·S. R. C. McMitchell, Sergiu Clima, N. Ronchi, Kaustuv Banerjee, Umberto Celano, M. Popovici, Luca Piazza, G. Van den bosch, Jan Van Houdt	2021	18
18	Ferroelectric La‐Doped ZrO₂/Hf_xZr_1−xO₂ Bilayer Stacks with Enhanced Endurance physica status solidi (RRL) - Rapid Research Letters ·M. Popovici, A. Walke, Kaustuv Banerjee, N. Ronchi, Johan Meersschaut, Umberto Celano, S. R. C. McMitchell, Valentina Spampinato, Alexis Franquet, Paola Favia, Johan Swerts, G. Van den bosch, Jan Van Houdt	2021	18
19	New Insights into the Imprint Effect in FE-HfO₂ and its Recovery Y. Higashi, Karine Florent, A. Subirats, B. Kaczer, Luca Piazza, Sergiu Clima, N. Ronchi, S. R. C. McMitchell, Kaustuv Banerjee, Umberto Celano, Mariko Suzuki, D. Linten, Jan Van Houdt	2019	18
20	Program/Erase Scheme for Suppressing Interface Trap Generation in HfO₂-Based Ferroelectric Field Effect Transistor IEEE Electron Device Letters ·Jinhong Min, N. Ronchi, S. R. C. McMitchell, Barry O'Sullivan, Kaustuv Banerjee, G. Van den bosch, Jan Van Houdt, Changhwan Shin	2021	17

About N. Ronchi

N. Ronchi is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 66 papers that have together received 1.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (50 papers), GaN-based semiconductor devices and materials (33 papers), Ferroelectric and Negative Capacitance Devices (31 papers), Advanced Memory and Neural Computing (13 papers), Silicon Carbide Semiconductor Technologies (13 papers), Ga2O3 and related materials (12 papers), MXene and MAX Phase Materials (10 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). The work is most often cited by research in Condensed Matter Physics (879 citations), Electronic, Optical and Magnetic Materials (370 citations), Electrical and Electronic Engineering (1.1k citations), Atomic and Molecular Physics, and Optics (224 citations) and Materials Chemistry (302 citations). N. Ronchi has collaborated with scholars based in Belgium, Italy and Taiwan. Frequent co-authors include Stefaan Decoutere, Enrico Zanoni, Gaudenzio Meneghesso, Antonio Stocco, Matteo Meneghini, Steve Stoffels, Shuzhen You, Benoit Bakeroot, Jan Van Houdt and Niels Posthuma. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters, Japanese Journal of Applied Physics and IEEE Journal of the Electron Devices Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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