N. Ronchi

1.5k total citations
66 papers, 1.2k citations indexed

About

N. Ronchi is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, N. Ronchi has authored 66 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 63 papers in Electrical and Electronic Engineering, 33 papers in Condensed Matter Physics and 13 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in N. Ronchi's work include Semiconductor materials and devices (50 papers), GaN-based semiconductor devices and materials (33 papers) and Ferroelectric and Negative Capacitance Devices (31 papers). N. Ronchi is often cited by papers focused on Semiconductor materials and devices (50 papers), GaN-based semiconductor devices and materials (33 papers) and Ferroelectric and Negative Capacitance Devices (31 papers). N. Ronchi collaborates with scholars based in Belgium, Italy and South Korea. N. Ronchi's co-authors include Stefaan Decoutere, Enrico Zanoni, Gaudenzio Meneghesso, Antonio Stocco, Matteo Meneghini, Steve Stoffels, Shuzhen You, Benoit Bakeroot, Jan Van Houdt and Niels Posthuma and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

N. Ronchi

63 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Ronchi Belgium 19 1.1k 879 370 302 224 66 1.2k
Clemens Ostermaier Austria 17 938 0.9× 968 1.1× 440 1.2× 163 0.5× 219 1.0× 58 1.1k
Karen Geens Belgium 18 1.2k 1.1× 1.3k 1.5× 565 1.5× 180 0.6× 207 0.9× 61 1.4k
Jie Fan China 16 406 0.4× 527 0.6× 255 0.7× 252 0.8× 325 1.5× 59 761
Satyaki Ganguly United States 13 414 0.4× 524 0.6× 306 0.8× 144 0.5× 115 0.5× 30 630
Brian M. McSkimming United States 13 316 0.3× 320 0.4× 201 0.5× 147 0.5× 153 0.7× 24 481
Andreas R. Alt Switzerland 16 683 0.6× 680 0.8× 262 0.7× 85 0.3× 261 1.2× 29 834
J. Das Belgium 13 572 0.5× 360 0.4× 270 0.7× 227 0.8× 488 2.2× 26 933
Han Wui Then United States 22 1.5k 1.4× 551 0.6× 242 0.7× 175 0.6× 572 2.6× 52 1.6k
C. Christiansen United States 15 382 0.4× 334 0.4× 281 0.8× 179 0.6× 313 1.4× 39 773

Countries citing papers authored by N. Ronchi

Since Specialization
Citations

This map shows the geographic impact of N. Ronchi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Ronchi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Ronchi more than expected).

Fields of papers citing papers by N. Ronchi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Ronchi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Ronchi. The network helps show where N. Ronchi may publish in the future.

Co-authorship network of co-authors of N. Ronchi

This figure shows the co-authorship network connecting the top 25 collaborators of N. Ronchi. A scholar is included among the top collaborators of N. Ronchi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Ronchi. N. Ronchi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ronchi, N., M. Popovici, Harold Dekkers, et al.. (2025). Understanding the Slow Erase Operation in IGZO-Channel FeFETs: The Role of Positive Charge Generation Kinetics. IEEE Journal of the Electron Devices Society. 13. 245–251.
2.
Strand, Jack, et al.. (2024). Electron emission from deep traps in HfO2 under thermal and optical excitation. Physical review. B.. 109(13). 3 indexed citations
3.
Walke, A., et al.. (2024). Study of Endurance Performance of SiO2 Interfacial Layer Scaling Through O Scavenging in Si Channel n-FeFET With Si:HfO2 Ferroelectric Layer. IEEE Transactions on Electron Devices. 71(8). 4619–4625. 6 indexed citations
4.
Ronchi, N., A. Walke, M. Popovici, et al.. (2024). A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs. IEEE Electron Device Letters. 45(8). 1453–1456. 2 indexed citations
5.
Ronchi, N., Kaustuv Banerjee, A. Walke, et al.. (2024). Understanding the Time Dependent Write and Read Performance of IGZO-channel FeFETs. Lirias (KU Leuven). 661–664.
6.
7.
Wu, Cheng‐Hung, Ting‐Yu Chang, N. Ronchi, et al.. (2022). Demonstration of 64 Conductance States and Large Dynamic Range in Si-doped HfO2 FeFETs under Neuromorphic Computing Operations. 1–2. 2 indexed citations
8.
Ronchi, N., Lars‐Åke Ragnarsson, L. Breuil, et al.. (2021). Ferroelectric FET with Gd-doped HfO2: A Step Towards Better Uniformity and Improved Memory Performance. 1–2. 2 indexed citations
9.
Bardon, M. Garcia, Yang Xiang, L. Breuil, et al.. (2021). Understanding the memory window in 1T-FeFET memories: a depolarization field perspective. VUBIR (Vrije Universiteit Brussel). 1–4. 6 indexed citations
10.
Ronchi, N., S. R. C. McMitchell, Kaustuv Banerjee, et al.. (2021). Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor. IEEE Electron Device Letters. 42(9). 1280–1283. 17 indexed citations
11.
O’Sullivan, Barry, V. Putcha, V. V. Afanas’ev, et al.. (2020). Defect profiling in FEFET Si:HfO2 layers. Applied Physics Letters. 117(20). 25 indexed citations
12.
Higashi, Y., Luca Piazza, Masato Suzuki, et al.. (2019). Impact of Charge trapping on Imprint and its Recovery in HfO 2 based FeFET. IEEE Conference Proceedings. 2019. 1–15. 12 indexed citations
13.
14.
Posthuma, Niels, Shuzhen You, Steve Stoffels, et al.. (2018). An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology. 284–287. 95 indexed citations
15.
Posthuma, Niels, Shuzhen You, N. Ronchi, et al.. (2016). Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance. 95–98. 78 indexed citations
16.
Hu, Jie, Steve Stoffels, Silvia Lenci, et al.. (2015). Investigation of constant voltage off-state stress on Au-free AlGaN/GaN Schottky barrier diodes. Japanese Journal of Applied Physics. 54(4S). 04DF07–04DF07. 6 indexed citations
17.
Hove, M. Van, Xuanwu Kang, Steve Stoffels, et al.. (2013). Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics. IEEE Transactions on Electron Devices. 60(10). 3071–3078. 59 indexed citations
18.
Zanoni, Enrico, Gaudenzio Meneghesso, Matteo Meneghini, et al.. (2011). (Invited) Electric-Field and Thermally-Activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors. ECS Transactions. 41(8). 237–249. 5 indexed citations
19.
Zanoni, Enrico, et al.. (2009). Reverse gate bias stress induced degradation of GaN HEMT. IRIS UNIMORE (University of Modena and Reggio Emilia). 1 indexed citations
20.
Zanoni, Enrico, Gaudenzio Meneghesso, Matteo Meneghini, et al.. (2009). Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach. IRIS UNIMORE (University of Modena and Reggio Emilia). 212–217. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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