L. Breuil

811 total citations
70 papers, 657 citations indexed

About

L. Breuil is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Materials Chemistry. According to data from OpenAlex, L. Breuil has authored 70 papers receiving a total of 657 indexed citations (citations by other indexed papers that have themselves been cited), including 69 papers in Electrical and Electronic Engineering, 21 papers in Computer Networks and Communications and 20 papers in Materials Chemistry. Recurrent topics in L. Breuil's work include Semiconductor materials and devices (68 papers), Advanced Memory and Neural Computing (29 papers) and Advanced Data Storage Technologies (21 papers). L. Breuil is often cited by papers focused on Semiconductor materials and devices (68 papers), Advanced Memory and Neural Computing (29 papers) and Advanced Data Storage Technologies (21 papers). L. Breuil collaborates with scholars based in Belgium, United Kingdom and United States. L. Breuil's co-authors include Jan Van Houdt, G. Van den bosch, A. Cacciato, A. Arreghini, Pieter Blomme, A. Furnémont, J. G. Lisoni, K. De Meyer, M. Rosmeulen and R. Degraeve and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

L. Breuil

67 papers receiving 628 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Breuil Belgium 15 640 198 115 39 22 70 657
Pieter Blomme Belgium 16 773 1.2× 152 0.8× 107 0.9× 55 1.4× 45 2.0× 61 789
Sheng-Chih Lai Taiwan 13 437 0.7× 219 1.1× 98 0.9× 37 0.9× 22 1.0× 37 477
Jeff J. Peterson United States 16 629 1.0× 145 0.7× 39 0.3× 34 0.9× 42 1.9× 35 660
J. Yugami Japan 13 452 0.7× 72 0.4× 48 0.4× 28 0.7× 56 2.5× 64 487
K. Yahashi Japan 5 452 0.7× 93 0.5× 181 1.6× 38 1.0× 38 1.7× 7 553
A. Subirats Belgium 13 576 0.9× 164 0.8× 45 0.4× 9 0.2× 15 0.7× 33 589
M. Noh South Korea 8 346 0.5× 72 0.4× 45 0.4× 15 0.4× 35 1.6× 16 367
M. B. Zahid Belgium 14 494 0.8× 132 0.7× 23 0.2× 47 1.2× 14 0.6× 33 517
D.L. Kencke United States 13 364 0.6× 159 0.8× 28 0.2× 35 0.9× 46 2.1× 34 423
C. Papadas France 14 480 0.8× 129 0.7× 22 0.2× 25 0.6× 41 1.9× 60 508

Countries citing papers authored by L. Breuil

Since Specialization
Citations

This map shows the geographic impact of L. Breuil's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Breuil with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Breuil more than expected).

Fields of papers citing papers by L. Breuil

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Breuil. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Breuil. The network helps show where L. Breuil may publish in the future.

Co-authorship network of co-authors of L. Breuil

This figure shows the co-authorship network connecting the top 25 collaborators of L. Breuil. A scholar is included among the top collaborators of L. Breuil based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Breuil. L. Breuil is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Higashi, Y., João P. A. Bastos, L. Breuil, et al.. (2024). Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. 1–6. 1 indexed citations
2.
Breuil, L., M. Popovici, A. Arreghini, et al.. (2024). Gate Side Injection Operating Mode for 3D NAND Flash Memories. Lirias (KU Leuven). 1–4. 7 indexed citations
3.
Breuil, L., Filip Schleicher, Farid Sebaai, et al.. (2021). First Demonstration of Ruthenium and Molybdenum Word lines Integrated into 40nm Pitch 3D-NAND Memory Devices. Symposium on VLSI Technology. 1–2. 4 indexed citations
4.
Ronchi, N., Lars‐Åke Ragnarsson, L. Breuil, et al.. (2021). Ferroelectric FET with Gd-doped HfO2: A Step Towards Better Uniformity and Improved Memory Performance. 1–2. 2 indexed citations
5.
Bardon, M. Garcia, Yang Xiang, L. Breuil, et al.. (2021). Understanding the memory window in 1T-FeFET memories: a depolarization field perspective. VUBIR (Vrije Universiteit Brussel). 1–4. 6 indexed citations
6.
O’Sullivan, Barry, V. Putcha, V. V. Afanas’ev, et al.. (2020). Defect profiling in FEFET Si:HfO2 layers. Applied Physics Letters. 117(20). 25 indexed citations
7.
Breuil, L., Laura Nyns, Kaustuv Banerjee, et al.. (2019). Impact of SiON tunnel layer composition on 3D NAND cell performance. 1–4. 10 indexed citations
8.
Delhougne, Romain, A. Arreghini, Erik Rosseel, et al.. (2018). First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices. 203–204. 12 indexed citations
9.
Degraeve, R., M. Toledano-Luque, A. Arreghini, et al.. (2015). Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling. Microelectronic Engineering. 147. 45–50. 8 indexed citations
10.
Breuil, L., J. G. Lisoni, Pieter Blomme, G. Van den bosch, & Jan Van Houdt. (2014). ${\rm HfO}_{2}$ Based High-$k$ Inter-Gate Dielectrics for Planar NAND Flash Memory. IEEE Electron Device Letters. 35(1). 45–47. 21 indexed citations
11.
12.
Breuil, L., G. Van den bosch, A. Cacciato, et al.. (2011). Optimization of gate stack parameters towards 3D-SONOS application. Microelectronic Engineering. 88(7). 1164–1167. 2 indexed citations
13.
Cacciato, A., L. Breuil, H. Dekker, et al.. (2011). A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology. Electrochemical and Solid-State Letters. 14(7). H271–H273. 2 indexed citations
14.
bosch, G. Van den, A. Arreghini, L. Breuil, et al.. (2011). High Performance THANVaS Memories for MLC Charge Trap NAND Flash. 1–4. 4 indexed citations
15.
Arreghini, A., G. Van den bosch, L. Breuil, et al.. (2010). Investigation on the temperature dependence of the dielectric constant of high-k materials for non-volatile memory applications. 101–104. 1 indexed citations
16.
Arreghini, A., G. Van den bosch, Luca Vandelli, et al.. (2010). Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories. IEEE Electron Device Letters. 31(9). 936–938. 11 indexed citations
17.
Adelmann, Christoph, Johan Swerts, Olivier Richard, et al.. (2010). (Invited) Introducing Lanthanide Aluminates as Dielectrics for Nonvolatile Memory Applications: A Material Scientist's View. ECS Transactions. 33(3). 31–42. 7 indexed citations
18.
19.
Breuil, L., M. Rosmeulen, A. Cacciato, et al.. (2007). Nitride based FinFLASH memory device using multilevel Hot Carrier Program/Erase. 46–47. 2 indexed citations
20.
Breuil, L., L. Haspeslagh, M. Lorenzini, Joeri De Vos, & Jan Van Houdt. (2005). Scaling effects in dual-bit split-gate nitride memory devices. Solid-State Electronics. 49(11). 1862–1866. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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