J.C. Lee

2.0k total citations
61 papers, 1.5k citations indexed

About

J.C. Lee is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J.C. Lee has authored 61 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Electrical and Electronic Engineering, 5 papers in Materials Chemistry and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J.C. Lee's work include Semiconductor materials and devices (59 papers), Advancements in Semiconductor Devices and Circuit Design (53 papers) and Ferroelectric and Negative Capacitance Devices (29 papers). J.C. Lee is often cited by papers focused on Semiconductor materials and devices (59 papers), Advancements in Semiconductor Devices and Circuit Design (53 papers) and Ferroelectric and Negative Capacitance Devices (29 papers). J.C. Lee collaborates with scholars based in United States, South Korea and Canada. J.C. Lee's co-authors include R. Nieh, Rino Choi, Byoung Hun Lee, Chang Seok Kang, Sundararaman Gopalan, Laegu Kang, Wenjie Qi, K. Onishi, Yongjoo Jeon and R. Moazzami and has published in prestigious journals such as IEEE Transactions on Electron Devices, Thin Solid Films and IEEE Electron Device Letters.

In The Last Decade

J.C. Lee

61 papers receiving 1.4k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
J.C. Lee 1.5k 294 150 108 45 61 1.5k
L. Manchanda 828 0.6× 370 1.3× 150 1.0× 146 1.4× 37 0.8× 31 912
Barry O’Sullivan 970 0.7× 333 1.1× 188 1.3× 63 0.6× 99 2.2× 109 1.1k
Howard R. Huff 1.1k 0.8× 347 1.2× 201 1.3× 80 0.7× 109 2.4× 92 1.2k
J. Conner 515 0.3× 297 1.0× 197 1.3× 76 0.7× 67 1.5× 24 625
Wataru Mizubayashi 1.4k 0.9× 287 1.0× 235 1.6× 74 0.7× 165 3.7× 140 1.4k
S. Samavedam 1.2k 0.8× 357 1.2× 199 1.3× 98 0.9× 49 1.1× 36 1.3k
M. Hoshino 672 0.5× 131 0.4× 236 1.6× 109 1.0× 122 2.7× 36 762
B. Guillaumot 1.1k 0.7× 220 0.7× 114 0.8× 48 0.4× 131 2.9× 65 1.1k
Dae-Gyu Park 626 0.4× 176 0.6× 158 1.1× 75 0.7× 60 1.3× 54 693
Y. Arimoto 876 0.6× 318 1.1× 96 0.6× 77 0.7× 247 5.5× 67 1.1k

Countries citing papers authored by J.C. Lee

Since Specialization
Citations

This map shows the geographic impact of J.C. Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.C. Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.C. Lee more than expected).

Fields of papers citing papers by J.C. Lee

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.C. Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.C. Lee. The network helps show where J.C. Lee may publish in the future.

Co-authorship network of co-authors of J.C. Lee

This figure shows the co-authorship network connecting the top 25 collaborators of J.C. Lee. A scholar is included among the top collaborators of J.C. Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.C. Lee. J.C. Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yum, J., D. Ferrer, Todd W. Hudnall, et al.. (2011). Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates. Thin Solid Films. 520(7). 3091–3095. 18 indexed citations
2.
Kang, Chang Yong, et al.. (2008). PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- $k$ Dielectrics. IEEE Electron Device Letters. 29(4). 389–391. 35 indexed citations
3.
Thareja, Gaurav, et al.. (2006). NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics. IEEE Electron Device Letters. 27(10). 802–804. 8 indexed citations
4.
Choi, Rino, Byoung Hun Lee, Man Chang, et al.. (2006). Decoupling of cold-carrier effects in hot-carrier reliability assessment of HfO/sub 2/ gated nMOSFETs. IEEE Electron Device Letters. 27(8). 662–664. 14 indexed citations
5.
Akbar, M.S., Changhwan Choi, Se Jong Rhee, et al.. (2006). Investigation of transient relaxation under static and dynamic stress in Hf-based gate oxides. IEEE Transactions on Electron Devices. 53(5). 1200–1207. 1 indexed citations
6.
Zhu, Feng, Se Jong Rhee, Chang Yong Kang, et al.. (2005). Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y/sub 2/O/sub 3//HfO/sub 2/ gate dielectric. IEEE Electron Device Letters. 26(12). 876–878. 4 indexed citations
7.
Akbar, M.S., Changhwan Choi, Se Jong Rhee, et al.. (2005). Electrical performance and reliability improvement by using compositionally varying bi-Layer structure of PVD HfSi/sub x/O/sub y/ dielectric. IEEE Electron Device Letters. 26(3). 166–168. 2 indexed citations
8.
Rhee, Se Jong, Hyoung-Sub Kim, Chang Yong Kang, et al.. (2005). Optimization and reliability characteristics of TiO/sub 2//HfO/sub 2/ multi-metal dielectric MOSFETs. 44. 168–169. 5 indexed citations
9.
Choi, Changhwan, Changseok Kang, Chang Yong Kang, et al.. (2004). Positive bias temperature instability effects of Hf-based nMOSFETs with various nitrogen and silicon profiles. IEEE Electron Device Letters. 26(1). 32–34. 11 indexed citations
10.
11.
12.
Kang, Chang Seok, Rino Choi, Chan Kang, et al.. (2004). The Electrical and Material Characterization of Hafnium Oxynitride Gate Dielectrics With TaN-Gate Electrode. IEEE Transactions on Electron Devices. 51(2). 220–227. 94 indexed citations
13.
Qi, Wenjie, R. Nieh, Byoung Hun Lee, et al.. (2003). MOSCAP and MOSFET characteristics using ZrO/sub 2/ gate dielectric deposited directly on Si. 145–148. 40 indexed citations
14.
Choi, Rino, K. Onishi, R. Nieh, et al.. (2003). High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode. 193–194. 1 indexed citations
15.
Onishi, K., Chang Seok Kang, Rino Choi, et al.. (2003). Hard and soft-breakdown characteristics of ultra-thin HfO/sub 2/ under dynamic and constant voltage stress. 629–632. 14 indexed citations
16.
Kang, Laegu, K. Onishi, Byoung Hun Lee, et al.. (2002). MOSFET devices with polysilicon on single-layer HfO/sub 2/ high-K dielectrics. 35–38. 47 indexed citations
17.
Qi, Wenjie, R. Nieh, Byoung Hun Lee, et al.. (2002). Performance of MOSFETs with ultra thin ZrO/sub 2/ and Zr silicate gate dielectrics. 40–41. 17 indexed citations
18.
19.
Kang, Laegu, Byoung Hun Lee, Wenjie Qi, et al.. (2000). Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric. IEEE Electron Device Letters. 21(4). 181–183. 202 indexed citations
20.
Park, Keeseong, et al.. (1990). Effect of dopant redistribution, segregation, and carrier trapping in As-implanted MOS gates. IEEE Transactions on Electron Devices. 37(11). 2322–2330. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by L. Manchanda Breakdown of academic impact, for papers by Barry O’Sullivan Breakdown of academic impact, for papers by Howard R. Huff Breakdown of academic impact, for papers by J. Conner Breakdown of academic impact, for papers by Wataru Mizubayashi Breakdown of academic impact, for papers by S. Samavedam Breakdown of academic impact, for papers by M. Hoshino Breakdown of academic impact, for papers by B. Guillaumot Breakdown of academic impact, for papers by Dae-Gyu Park Breakdown of academic impact, for papers by Y. Arimoto
Rankless by CCL
2026