L. Daté

537 citations

37 papers · 362 indexed · h-index 12

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 31
- Advancements in Semiconductor Devices and Circuit Design 13
- Integrated Circuits and Semiconductor Failure Analysis 11
- Advanced Memory and Neural Computing 10
- Ferroelectric and Negative Capacitance Devices 7
Materials Chemistry
- Electronic and Structural Properties of Oxides 4
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 4
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 5
Radiology, Nuclear Medicine and Imaging

Co-authors: Bernard Despax Hubert Caquineau Mohammed Yousfi Udayan Ganguly Sven Van Elshocht Chris Olsen J. Vasi S. M. Seutter
Cited by: Electrical and Electronic Engineering Materials Chemistry Atomic and Molecular Physics, and Optics
Journals: IEEE Electron Device Letters (4 papers)Journal of The Electrochemical Society (4 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: Belgium United States India

In The Last Decade

L. Daté

33 papers receiving 333 citations

Peers

Countries citing papers authored by L. Daté

Since Specialization

Citations

This map shows the geographic impact of L. Daté's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Daté with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Daté more than expected).

Fields of papers citing papers by L. Daté

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Daté. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Daté. The network helps show where L. Daté may publish in the future.

Co-authorship network

The 25 scholars most cited alongside L. Daté, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. Daté Line = papers co-authored together L. Daté links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Novel Mobility Enhancement Schemes for Next Generation Silicon Carbide (SiC) Trench MOSFET Technology مسلم گلستان,Cristina Portilla Sauras,Stephen Weeks,Joshua Holt,Carla van Slagmaat,L. Daté,Sylwia Wajda,C. B. O.,William Quispe-Valverde,E. Josse,M. Chudzik,Siddarth Krishnan,Rahul Dhake,El Mehdi Bazizi	2024	0
2	Sub-10⁻⁹ Ω·cm² contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation Soham D. Dave,Marc Schaekers,Hao Yu,Ding Jianf,Andriy Hikavyy,L. Daté,C. D. Udechukwu,Hong Jeong,Jong-Suk 최종석Choi,Dr Shwetha B,A. J. Mayur,Javiera A. Carmona Jiménez,H. van Meer,Yu-Long Jiang,K. De Meyer,D. Mocuta,Naoto Horiguchi	2017	27
3	Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10⁻¹⁰Ω·cm²contact resistivity achieved on Ga doped Ge using nanosecond laser activation Lin‐Lin Wang,Hao Yu,Marc Schaekers,Kye Lim Lee,Alexis Franquet,Bastien Douhard,L. Daté,C. D. Udechukwu,Hong Jeong,Jong-Suk 최종석Choi,Dr Shwetha B,A. J. Mayur,Javiera A. Carmona Jiménez,H. van Meer,D. Mocuta,Naoto Horiguchi,Nadine Collaert,K. De Meyer,Yu-Long Jiang	2017	21
4	Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001) Applied Physics Letters ·Weiming Guo,L. Daté,V. Peña,Xinyu Bao,Clément Merckling,Niamh Waldron,Nadine Collaert,大山卓也,E. Sánchez,E. Vancoille,K. Barla,Aaron Thean,Pierre Eyben,Wilfried Vandervorst	2014	39
5	Scaled Gate Stacks for Sub-20-nm CMOS Logic Applications Through Integration of Thermal IL and ALD HfOx IEEE Electron Device Letters ·K. Joshi,Shih‐Ya Hung,Subhadeep Mukhopadhyay,Tsutomu Sato,M. J. Bevan,高橋悠一,A. Wei,Akiko Mahara,Brendan McDougall,Dana rer. nat. Kralisch,K. Holubar,Ghazal Saheli,Sang-Boo Nam,Mohammadreza Sajjadi,L. Daté,Suman Datta,Adam Brand,T. Lee,Souvik Mahapatra	2012	9
6	TDEAH/TDEAZとH 2 Oを用いたALD HfZrO x の開発 Journal of The Electrochemical Society ·Emmanuel Agyei,Hilde Tielens,Shinji Takeoka,尚道安田,Laura Nyns,Christoph Adelmann,Annelies Delabie,T. Schram,Lars‐Åke Ragnarsson,A. Freysoldt,L. Daté,R. Schreutelkamp,Sven Van Elshocht	2011	8
7	Optimization of gate stack parameters towards 3D-SONOS application Microelectronic Engineering ·L. Breuil,G. Van den bosch,A. Cacciato,L. Daté,Gouri Sankar Kar,Bao-Jun Tang,A. Arreghini,I. Debusschere,Jan Van Houdt	2011	2
8	A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology Electrochemical and Solid-State Letters ·A. Cacciato,L. Breuil,H. Dekker,M. Zahid,Gouri Sankar Kar,Kye Lim Lee,Tenecela Illescas,Xiaodong Shi,G. Van den bosch,M. Jurczak,I. Debusschere,Jan Van Houdt,Andrew Cockburn,L. Daté,Matheus Caiano Simões Amorim,Yohana Lamas Martínez,Won Lee	2011	2
9	Development of ALD HfZrO_x with TDEAH, TDEAZ and H₂O ECS Transactions ·曹迅,Hilde Tielens,Shinji Takeoka,Cristiane Santino da Silva,Laura Nyns,Christoph Adelmann,Annelies Delabie,T. Schram,Lars‐Åke Ragnarsson,Marc Schaekers,L. Daté,R. Schreutelkamp,Sven Van Elshocht	2010	3
10	Development of ALD HfZrO[sub x] with TDEAH/TDEAZ and H[sub 2]O Journal of The Electrochemical Society ·Xiaodong Shi,Hilde Tielens,Shinji Takeoka,Takakazu Nakabayashi,Laura Nyns,Christoph Adelmann,Annelies Delabie,T. Schram,L.-Å. Ragnarsson,Marc Schaekers,L. Daté,R. Schreutelkamp,Sven Van Elshocht	2010	12
11	O<inf>2</inf> post deposition anneal of Al<inf>2</inf>O<inf>3</inf> blocking dielectric for higher performance and reliability of TANOS Flash memory A. Rothschild,L. Breuil,G. Van den bosch,Olivier Richard,Thierry Conard,Alexis Franquet,A. Cacciato,I. Debusschere,M. Jurczak,Jan Van Houdt,J. A. Kittl,Udayan Ganguly,L. Daté,唐俊平,R. Schreutelkamp	2009	11
12	Impact of Top-Surface Tunnel-Oxide Nitridation on Flash Memory Performance and Reliability IEEE Electron Device Letters ·Udayan Ganguly,А.Г. Медведев,D. Wellekens,L. Daté,Luigi Russo,A. Rothschild,T. Lee	2009	14
13	Optimization of HfSiON using a design of experiment (DOE) approach on 0.45V Vt Ni-FUSI CMOS transistors Microelectronics Reliability ·A. Rothschild,Pierre I. Karakiewicz,C. Kerner,Xiaodong Shi,Kye Lim Lee,L. Daté,Thierry Conard,Olivier Richard,C. Vrancken,Maria Barrdahl,A. Veloso,A. Lauwers,M. de Potter,I. Debusschere,M. Jurczak,M. Niwa,P. Absil,S. Biesemans	2007	2
14	Ultra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applications A. Veloso,F.N. Cubaynes,A. Rothschild,S. Mertens,R. Degraeve,Robert O’Connor,Chris Olsen,L. Daté,Marc Schaekers,C. Dachs,M. Jurczak	2004	1
15	Composition and Growth Kinetics of the Interfacial Layer for MOCVD HfO[sub 2] Layers on Si Substrates Journal of The Electrochemical Society ·Sven Van Elshocht,Matty Caymax,Stefan De Gendt,Thierry Conard,J. Pétry,L. Daté,芳樹狹間,Marc Heyns	2004	25
16	Bulk Properties of MOCVD-Deposited HfO[sub 2] Layers for High k Dielectric Applications Journal of The Electrochemical Society ·Sven Van Elshocht,Mikhaı̈l R. Baklanov,Bert Brijs,Richard G. Carter,Matty Caymax,L. Carbonell,Martine Claes,Thierry Conard,Martin Grolms,L. Daté,Stefan De Gendt,J. Kluth,Antony W. Ferrante,Olivier Richard,Danielle Vanhaeren,Guy Vereecke,T. Witters,Chao Zhao,Marc Heyns	2004	16
17	In-line electrical characterization of ultrathin gate dielectric films F.N. Cubaynes,コウタロウイノウエ,Hugh Gollan,Xiafang Zhang,L. Daté,芳樹狹間,Thierry Conard,A. Rothschild,Marc Schaekers	2003	0
18	Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon MRS Proceedings ·Sven Van Elshocht,Matty Caymax,Stefan De Gendt,Thierry Conard,J. Pétry,Martine Claes,T. Witters,Chao Zhao,Bert Brijs,Olivier Richard,H. Bender,Wilfried Vandervorst,Carlt Brighton,J. Kluth,L. Daté,芳樹狹間,Marc Heyns	2002	3
19	RF discharge modelling in a N₂O/SiH₄mixture for SiO₂deposition and comparison with experiment Journal of Physics D Applied Physics ·Bakuntsev Anton,L. Daté,M. Yousfi,Bernard Despax,Hubert Caquineau	2000	24
20	Analysis of the N₂O dissociation in a RF discharge reactor Journal of Physics D Applied Physics ·L. Daté,Bakuntsev Anton,Bernard Despax,Mohammed Yousfi,Hubert Caquineau,A. Hennad	1999	32

About L. Daté

L. Daté is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, Atomic and Molecular Physics, and Optics and Radiology, Nuclear Medicine and Imaging, having authored 37 papers that have together received 362 indexed citations. Recurring topics across this work include Semiconductor materials and devices (31 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Integrated Circuits and Semiconductor Failure Analysis (11 papers), Advanced Memory and Neural Computing (10 papers), Ferroelectric and Negative Capacitance Devices (7 papers), Copper Interconnects and Reliability (5 papers), Semiconductor materials and interfaces (4 papers) and Electronic and Structural Properties of Oxides (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (342 citations), Materials Chemistry (123 citations), Atomic and Molecular Physics, and Optics (68 citations), Electronic, Optical and Magnetic Materials (25 citations) and Radiology, Nuclear Medicine and Imaging (25 citations). L. Daté has collaborated with scholars based in Belgium, United States and India. Frequent co-authors include Bernard Despax, Hubert Caquineau, Mohammed Yousfi, Udayan Ganguly, Sven Van Elshocht, Chris Olsen, J. Vasi, S. M. Seutter, Souvik Mahapatra and A. Hennad. Their work appears in journals such as IEEE Electron Device Letters, Journal of The Electrochemical Society, IEEE Transactions on Electron Devices, Journal of Physics D Applied Physics and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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