R. Schreutelkamp

417 total citations
31 papers, 276 citations indexed

About

R. Schreutelkamp is a scholar working on Electrical and Electronic Engineering, Surfaces, Coatings and Films and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. Schreutelkamp has authored 31 papers receiving a total of 276 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 4 papers in Surfaces, Coatings and Films and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. Schreutelkamp's work include Semiconductor materials and devices (21 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). R. Schreutelkamp is often cited by papers focused on Semiconductor materials and devices (21 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). R. Schreutelkamp collaborates with scholars based in Belgium, United States and Japan. R. Schreutelkamp's co-authors include K. De Meyer, Peter Verheyen, F. Nouri, R. Rooyackers, Victor Moroz, Lee Smith, M. Jurczak, Geert Eneman, A. De Keersgieter and S. Biesemans and has published in prestigious journals such as Journal of The Electrochemical Society, IEEE Transactions on Electron Devices and Journal of Non-Crystalline Solids.

In The Last Decade

R. Schreutelkamp

30 papers receiving 264 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Schreutelkamp Belgium 10 257 51 41 39 10 31 276
F.N. Cubaynes Belgium 9 369 1.4× 60 1.2× 48 1.2× 34 0.9× 4 0.4× 26 388
Christoph Zechner Switzerland 11 316 1.2× 41 0.8× 61 1.5× 107 2.7× 24 2.4× 50 331
C. Bowen United States 6 168 0.7× 44 0.9× 60 1.5× 42 1.1× 11 1.1× 14 211
Jyi-Tsong Lin Taiwan 12 500 1.9× 69 1.4× 37 0.9× 22 0.6× 5 0.5× 124 517
S. C. Song United States 9 268 1.0× 21 0.4× 39 1.0× 32 0.8× 5 0.5× 37 280
A. Opdebeeck Belgium 4 119 0.5× 26 0.5× 33 0.8× 21 0.5× 8 0.8× 4 130
H.J. Tao Taiwan 9 199 0.8× 18 0.4× 28 0.7× 30 0.8× 3 0.3× 20 206
T. Grabolla Germany 10 224 0.9× 47 0.9× 63 1.5× 42 1.1× 18 1.8× 31 263
S. Peters Germany 9 280 1.1× 38 0.7× 70 1.7× 114 2.9× 10 1.0× 26 293
C. Kerner Belgium 11 347 1.4× 40 0.8× 26 0.6× 63 1.6× 8 0.8× 33 360

Countries citing papers authored by R. Schreutelkamp

Since Specialization
Citations

This map shows the geographic impact of R. Schreutelkamp's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Schreutelkamp with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Schreutelkamp more than expected).

Fields of papers citing papers by R. Schreutelkamp

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Schreutelkamp. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Schreutelkamp. The network helps show where R. Schreutelkamp may publish in the future.

Co-authorship network of co-authors of R. Schreutelkamp

This figure shows the co-authorship network connecting the top 25 collaborators of R. Schreutelkamp. A scholar is included among the top collaborators of R. Schreutelkamp based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Schreutelkamp. R. Schreutelkamp is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kikuchi, Yoshiaki, T. Hopf, G. Mannaert, et al.. (2016). Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation. 17.5.1–17.5.4. 2 indexed citations
2.
Tielens, Hilde, Shinji Takeoka, Laura Nyns, et al.. (2011). TDEAH/TDEAZとH 2 Oを用いたALD HfZrO x の開発. Journal of The Electrochemical Society. 158(1). 69–74. 8 indexed citations
3.
Shi, Xiaodong, Hilde Tielens, Shinji Takeoka, et al.. (2010). Development of ALD HfZrO[sub x] with TDEAH/TDEAZ and H[sub 2]O. Journal of The Electrochemical Society. 158(1). H69–H69. 12 indexed citations
4.
Tielens, Hilde, Shinji Takeoka, Laura Nyns, et al.. (2010). Development of ALD HfZrOx with TDEAH, TDEAZ and H2O. ECS Transactions. 27(1). 699–704. 3 indexed citations
6.
Ortolland, C., Lars‐Åke Ragnarsson, C. Kerner, et al.. (2009). Junction anneal sequence optimization for advanced high-k / metal gate CMOS technology. 54–57. 5 indexed citations
7.
Vanoppen, Peter, et al.. (2008). Novel approach for immersion lithography defectivity control to increase productivity. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6922. 69223U–69223U. 3 indexed citations
8.
Ortolland, C., Naoto Horiguchi, C. Kerner, et al.. (2008). Performance Enhancement of PFET Planar Devices by Plasma Immersion Ion Implantation (P3I). AIP conference proceedings. 465–468. 1 indexed citations
9.
Eyben, Pierre, Wilfried Vandervorst, C. Vrancken, et al.. (2008). Advanced 2D/3D simulations for laser annealed device using an atomistic kinetic Monte Carlo approach and Scanning Spreading Resistance Microscopy (SSRM). vlsi2008. 1–4. 4 indexed citations
10.
Arghavani, Reza, et al.. (2008). Implementation of High-k / Metal Gate in High-Volume Manufacturing. ECS Transactions. 13(1). 131–142. 1 indexed citations
11.
Felch, Susan B., S. Severi, Hans Peter Forstner, et al.. (2007). Laser Annealed Junctions: Process Integration Sequence Optimization for Advanced CMOS Technologies. 532. 137–140. 7 indexed citations
12.
Rosseel, Erik, J.P. Lu, Andriy Hikavyy, et al.. (2007). Impact of sub-melt laser annealing on Si<inf>1-x</inf>Ge<inf>x</inf> source /drain defectivity. 907. 307–315. 2 indexed citations
13.
Vandervorst, Wilfried, Susan B. Felch, C. Vrancken, et al.. (2007). Analysis of As, P Diffusion and Defect Evolution during Sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetic Monte Carlo Approach. 955–958. 18 indexed citations
14.
Vanoppen, Peter, et al.. (2007). Immersion-induced defect SEM-based library for fast baseline improvement and excursion. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6518. 65182G–65182G. 2 indexed citations
15.
Pawlak, Bartek, E. Augendre, S. Severi, et al.. (2006). The Carbon Co-implant with Spike RTA Solution for Boron Extension. MRS Proceedings. 912. 4 indexed citations
16.
González, Mireia Bargalló, Geert Eneman, Peter Verheyen, et al.. (2006). Impact of Etching Depth on the Leakage Current of Recessed SiGe Junctions. 97. 1–2. 1 indexed citations
17.
Mertens, S., R. Schreutelkamp, Yihwan Kim, et al.. (2006). Study of Ni-Silicide Contacts to Si:C Source/Drain.. ECS Transactions. 3(2). 139–147. 10 indexed citations
18.
Pawlak, Bartek, Ray Duffy, E. Augendre, et al.. (2006). The Carbon Co-implant with Spike RTA Solution for Phosphorus Extension. MRS Proceedings. 912. 8 indexed citations
19.
Severi, S., E. Augendre, C. Kerner, et al.. (2006). NMOS and PMOS Metal Gate Transistors with Junctions Activated by Laser Annealing. 1–2. 1 indexed citations
20.
Verheyen, Peter, R. Rooyackers, F. Nouri, et al.. (2005). Layout impact on the performance of a locally strained PMOSFET. 22–23. 34 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026