Johan Swerts

3.4k total citations
158 papers, 2.1k citations indexed

About

Johan Swerts is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Johan Swerts has authored 158 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 116 papers in Electrical and Electronic Engineering, 76 papers in Atomic and Molecular Physics, and Optics and 61 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Johan Swerts's work include Semiconductor materials and devices (86 papers), Magnetic properties of thin films (64 papers) and Ferroelectric and Negative Capacitance Devices (45 papers). Johan Swerts is often cited by papers focused on Semiconductor materials and devices (86 papers), Magnetic properties of thin films (64 papers) and Ferroelectric and Negative Capacitance Devices (45 papers). Johan Swerts collaborates with scholars based in Belgium, France and United States. Johan Swerts's co-authors include Sven Van Elshocht, Gouri Sankar Kar, Sébastien Couet, Annelies Delabie, Christoph Adelmann, M. Popovici, K. Temst, S. Mertens, Geoffrey Pourtois and J. A. Kittl and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Johan Swerts

157 papers receiving 2.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Johan Swerts Belgium 25 1.5k 872 850 649 270 158 2.1k
L. R. C. Fonseca United States 25 1.5k 1.0× 600 0.7× 941 1.1× 250 0.4× 106 0.4× 67 2.0k
Tiffany Santos United States 22 996 0.6× 1.2k 1.3× 1.2k 1.4× 1.2k 1.8× 652 2.4× 61 2.5k
M. Grobis United States 20 873 0.6× 1.0k 1.2× 812 1.0× 216 0.3× 183 0.7× 47 1.7k
Y. Souche France 13 437 0.3× 883 1.0× 554 0.7× 727 1.1× 326 1.2× 39 1.4k
Guo‐Xing Miao Canada 29 1.3k 0.9× 1.3k 1.5× 1.2k 1.5× 1.1k 1.7× 453 1.7× 94 2.7k
Wenjin Zhao China 16 558 0.4× 905 1.0× 1.6k 1.9× 381 0.6× 262 1.0× 35 2.0k
Pierre Sénéor France 21 653 0.4× 900 1.0× 1.3k 1.6× 657 1.0× 367 1.4× 44 1.9k
Kamil Postava Czechia 21 924 0.6× 863 1.0× 410 0.5× 566 0.9× 109 0.4× 149 1.6k
M. Ali United Kingdom 21 533 0.3× 1.5k 1.7× 555 0.7× 1.0k 1.6× 700 2.6× 66 1.9k
Zheng Han China 28 923 0.6× 807 0.9× 2.0k 2.3× 410 0.6× 226 0.8× 81 2.5k

Countries citing papers authored by Johan Swerts

Since Specialization
Citations

This map shows the geographic impact of Johan Swerts's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Johan Swerts with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Johan Swerts more than expected).

Fields of papers citing papers by Johan Swerts

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Johan Swerts. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Johan Swerts. The network helps show where Johan Swerts may publish in the future.

Co-authorship network of co-authors of Johan Swerts

This figure shows the co-authorship network connecting the top 25 collaborators of Johan Swerts. A scholar is included among the top collaborators of Johan Swerts based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Johan Swerts. Johan Swerts is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Soulié, Jean-Philippe, Kiroubanand Sankaran, Benoît Van Troeye, et al.. (2024). Selecting alternative metals for advanced interconnects. Journal of Applied Physics. 136(17). 15 indexed citations
2.
Soulié, Jean-Philippe, Kiroubanand Sankaran, Karl Opsomer, et al.. (2024). Al3Sc thin films for advanced interconnect applications. Microelectronic Engineering. 286. 112141–112141. 7 indexed citations
3.
Carpenter, R., et al.. (2023). Offset Field Control for VCMA-MRAM. IEEE Transactions on Nanotechnology. 22. 564–568. 3 indexed citations
4.
Teugels, Lieve, S. R. C. McMitchell, Thierry Conard, et al.. (2023). Microwave Properties of Ba-Substituted Pb(Zr0.52Ti0.48)O3 after Chemical Mechanical Polishing. ECS Journal of Solid State Science and Technology. 12(9). 94006–94006. 2 indexed citations
5.
Soulié, Jean-Philippe, Kiroubanand Sankaran, Kris Vanstreels, et al.. (2022). Properties of ultrathin molybdenum films for interconnect applications. Materialia. 24. 101511–101511. 36 indexed citations
6.
Couet, Sébastien, Johan Swerts, Bart Sorée, et al.. (2021). Optimization of Tungsten β-Phase Window for Spin-Orbit-Torque Magnetic Random-Access Memory. Physical Review Applied. 16(6). 32 indexed citations
7.
Devolder, T., Joo-Von Kim, Johan Swerts, et al.. (2017). Domain wall based nanosecond-scale switching process in perpendicularly magnetized STT-MRAM cells. arXiv (Cornell University). 2 indexed citations
8.
Popovici, M., Benjamin Groven, Kristof Marcoen, et al.. (2017). Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties. Chemistry of Materials. 29(11). 4654–4666. 45 indexed citations
9.
Sankaran, Kiroubanand, Johan Swerts, Sébastien Couet, Kurt Stokbro, & Geoffrey Pourtois. (2016). Oscillatory behavior of the tunnel magnetoresistance due to thickness variations in Ta|CoFe|MgO magnetic tunnel junctions: A first-principles study. Physical review. B.. 94(9). 10 indexed citations
10.
Pawlak, Małgorzata, B. Kaczer, Minsoo Kim, et al.. (2011). Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potential. Symposium on VLSI Technology. 168–169. 4 indexed citations
11.
Pawlak, Małgorzata, B. Kaczer, M. Popovici, et al.. (2011). Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors. Applied Physics Letters. 98(18). 24 indexed citations
12.
Swerts, Johan, Guy Vereecke, An Hardy, et al.. (2011). Stabilization of ambient sensitive atomic layer deposited lanthanum aluminates by annealing and in situ capping. Applied Physics Letters. 98(10). 13 indexed citations
13.
Verdonck, Patrick, Annelies Delabie, Johan Swerts, et al.. (2011). Fundamental study of atomic layer deposition in and on porous low-k films. 88. 1–3. 2 indexed citations
14.
Delabie, Annelies, Matty Caymax, Jan Willem Maes, et al.. (2010). Ozone-Based Metal Oxide Atomic Layer Deposition: Impact of N[sub 2]/O[sub 2] Supply Ratio in Ozone Generation. Electrochemical and Solid-State Letters. 13(6). H176–H176. 15 indexed citations
15.
Popovici, M., Sven Van Elshocht, N. Menou, et al.. (2009). Atomic Layer Deposition of Strontium Titanate Films Using Sr([sup t]Bu[sub 3]Cp)[sub 2] and Ti(OMe)[sub 4]. Journal of The Electrochemical Society. 157(1). G1–G1. 55 indexed citations
16.
Elshocht, Sven Van, Christoph Adelmann, Thierry Conard, et al.. (2008). Silicate formation and thermal stability of ternary rare earth oxides as high-k dielectrics. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 26(4). 724–730. 34 indexed citations
17.
Maes, Jan Willem, Yanina Fedorenko, Annelies Delabie, et al.. (2007). Impact of Hf-Precursor Choice on Scaling and Performance of High-k Gate Dielectrics. ECS Transactions. 11(4). 59–72. 5 indexed citations
18.
Ragnarsson, Lars‐Åke, Vincent S. Chang, H.Y. Yu, et al.. (2007). Achieving Conduction Band-Edge Effective Work Functions by $\hbox{La}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicates. IEEE Electron Device Letters. 28(6). 486–488. 28 indexed citations
19.
Witte, H. De, T. Witters, Chao Zhao, et al.. (2006). Evaluation of Atomic Layer Deposited NbN and NbSiN as Metal Gate Materials. Journal of The Electrochemical Society. 153(5). G437–G437. 14 indexed citations
20.
Balogh, J., D. Kaptás, L. F. Kiss, et al.. (2005). Tailoring Fe∕Ag superparamagnetic composites by multilayer deposition. Applied Physics Letters. 87(10). 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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