A. Spessot

2.6k citations

113 papers · 1.6k indexed · h-index 19

Structural Biology top 2%
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 92
- Advancements in Semiconductor Devices and Circuit Design 79
- Ferroelectric and Negative Capacitance Devices 28
- Integrated Circuits and Semiconductor Failure Analysis 25
- Low-power high-performance VLSI design 19
- 3D IC and TSV technologies 6
- Advanced Memory and Neural Computing 5
Hardware and Architecture top 5%
Surfaces, Coatings and Films top 10%
Biomedical Engineering
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 7

Co-authors: Doyoung Jang Diederik Verkest M. Garcia Bardon A. Mocuta Julien Ryckaert P. Schuddinck Dmitry Yakimets Naoto Horiguchi
Cited by: Structural Biology Electrical and Electronic Engineering Hardware and Architecture
Journals: IEEE Transactions on Electron Devices (10 papers)IEEE Electron Device Letters (4 papers)Japanese Journal of Applied Physics (3 papers)
Partner nations: Belgium United States Italy

In The Last Decade

A. Spessot

105 papers receiving 1.6k citations

Peers

Countries citing papers authored by A. Spessot

Since Specialization

Citations

This map shows the geographic impact of A. Spessot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Spessot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Spessot more than expected).

Fields of papers citing papers by A. Spessot

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Spessot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Spessot. The network helps show where A. Spessot may publish in the future.

Co-authorship network

The 25 scholars most cited alongside A. Spessot, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Spessot Line = papers co-authored together A. Spessot links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Nb Contacts for Thermally-Stable High-Performance Logic and Memory Peripheral Transistor ROBERTA COSTA CAMINHA,R. Ritzenthaler,Kye Lim Lee,Pierre Eyben,Kiroubanand Sankaran,Clément Porret,Jon L. Fagre,Jhuma Ganguly,余明,J. Geypen,E. Capogreco,Seulki Roh,Vladimir Machkaoutsan,Lucas Petersen Barbosa Lima,Myung‐Sun Kim,A. Spessot,Naoto Horiguchi	2024	0
2	DRAM-Peri FinFET - A Thermally-Stable High-Performance Advanced CMOS RMG Platform with Mo-Based pWFM for sub-10nm DRAM Jhuma Ganguly,余明,R. Ritzenthaler,Francesca Scilla Smith,Jan Willem Maes,Yollande Sènan Djivoh,S. Brus,Jessica Delaplace,ROBERTA COSTA CAMINHA,Tokunaga Jun'ya,E. Capogreco,Vladimir Machkaoutsan,Sungwon Yoon,A. Spessot,Michael Givens,Naoto Horiguchi	2024	0
3	Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range Micromachines ·Stanislav Tyaginov,E. Bury,Alexander Grill,Zhuoqing Yu,Alexander Makarov,A. De Keersgieter,M. I. Vexler,Jacqui Ras,Runsheng Wang,A. Spessot,Adrian Chasin,B. Kaczer	2023	1
4	Stress in Silicon–Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors IEEE Transactions on Electron Devices ·Geert Eneman,A. Veloso,Paola Favia,Andriy Hikavyy,Clément Porret,Hiroaki Arimura,A. De Keersgieter,Geoffrey Pourtois,Roger Loo,A. Spessot,Philippe Matagne,Julien Ryckaert,Naoto Horiguchi	2021	7
5	80 nm tall thermally stable cost effective FinFETs for advanced dynamic random access memory periphery devices for artificial intelligence/machine learning and automotive applications Japanese Journal of Applied Physics ·A. Spessot,R. Ritzenthaler,E. Dentoni Litta,Emmanuel Dupuy,Barry O’Sullivan,João P. A. Bastos,E. Capogreco,Kenichi Miyaguchi,Vladimir Machkaoutsan,Lloyd Bentsen,P. Fazan,Naoto Horiguchi	2021	7
6	(Invited) Stress Simulations of Fins, Wires, and Nanosheets ECS Meeting Abstracts ·Geert Eneman,A. Veloso,Paola Favia,Andriy Hikavyy,Clément Porret,Hiroaki Arimura,A. De Keersgieter,Geoffrey Pourtois,Roger Loo,A. Spessot,Philippe Matagne,Julien Ryckaert,Naoto Horiguchi	2020	1
7	Thermal Stress-Aware CMOS–SRAM Partitioning in Sequential 3-D Technology IEEE Transactions on Electron Devices ·Shairfe Muhammad Salahuddin,E. Dentoni Litta,Anshul Gupta,R. Ritzenthaler,Marc Schaekers,Danil E. Petin,Hao Yu,A. Vandooren,Julien Ryckaert,Su‐Hwan Kang,A. Spessot	2020	2
8	(Invited) Stress Simulations of Fins, Wires, and Nanosheets ECS Transactions ·Geert Eneman,A. Veloso,Paola Favia,Andriy Hikavyy,Clément Porret,Hiroaki Arimura,A. De Keersgieter,Geoffrey Pourtois,Roger Loo,A. Spessot,Philippe Matagne,Julien Ryckaert,Naoto Horiguchi	2020	11
9	Introducing 2D-FETs in Device Scaling Roadmap using DTCO José Raúl Rendón Sáenz,Aryan Afzalian,T. Schram,Doyoung Jang,Devin Verreck,Quentin Smets,P. Schuddinck,Bilal Chehab,Surajit Sutar,Goutham Arutchelvan,Oksana Viktorovna Shurygina,Inge Asselberghs,A. Spessot,Iuliana Radu,Bertrand Parvais,Julien Ryckaert,Иванов Сергеи Вячеславович	2020	33
10	DTCO including Sustainability: Power-Performance-Area-Cost-Environmental score (PPACE) Analysis for Logic Technologies M. Garcia Bardon,Pieter Wuytens,L.-Å. Ragnarsson,Gioele Mirabelli,Doyoung Jang,Gert Willems,A. Mallik,A. Spessot,Julien Ryckaert,Bertrand Parvais	2020	55
11	Multiphysics Simulation & Design of Silicon Quantum Dot Qubit Devices IEEE Conference Proceedings ·Fahd A. Mohiyaddin,C. Vicini,D.I. Varlamov,A. Spessot,Prachand Man Pradhan,H. David Winslow,B. Govoreanu,Kevin Lauderdale,George Simion,J Jalal Shokokuhi,Amuno Elo Oghale,Florin Ciubotaru,Geert Eneman,F. M. Bufler,Stefan Kubicek,Julien Jussot	2019	3
12	Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications Trong Huynh-Bao,A. Veloso,Antoine Ginésy,Philippe Matagne,Julien Ryckaert,Manu Perumkunnil,D. Crotti,M. P.,A. Spessot,A. Furnémont,Gouri Sankar Kar,A. Mocuta	2019	5
13	CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits Japanese Journal of Applied Physics ·E. Dentoni Litta,R. Ritzenthaler,T. Schram,A. Spessot,Barry O’Sullivan,Vladimir Machkaoutsan,P. Fazan,Hamza Irfan,G. Mannaert,M. Olinic,Farid Sebaai,Andris Smolovskis,Monique Ercken,S. Demuynck,Naoto Horiguchi	2018	4
14	Track height reduction for standard-cell in below 5nm node: how low can you go? Praveen Raghavan,U.G.V.S.S. Kumara,Diederik Verkest,A. Mocuta,Jianfen Liang,A. Spessot,Julien Ryckaert,余颖,Peter Debacker,E. Choi,Rosie J Crane	2018	7
15	SRAM designs for 5nm node and beyond: Opportunities and challenges Trong Huynh-Bao,Antoine Ginésy,Julien Ryckaert,A. Spessot,Diederik Verkest,A. Mocuta	2017	9
16	Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs HAL (Le Centre pour la Communication Scientifique Directe) ·J. Franco,洪书剑,Subhadeep Mukhopadhyay,Cheng,Pieter Weckx,Ph. Roussel,T. Chiarella,Lars‐Åke Ragnarsson,Lionel Trojman,Naoto Horiguchi,A. Spessot,D. Linten,A. Mocuta	2016	12
17	Extreme scaling enabled by 5 tracks cells: Holistic design-device co-optimization for FinFETs and lateral nanowires M. Garcia Bardon,Yasser Sherazi,P. Schuddinck,Doyoung Jang,Dmitry Yakimets,Peter Debacker,Rogier Baert,Hans Mertens,Mustafa Badaroglu,A. Mocuta,Naoto Horiguchi,D. Mocuta,Prasanth Raghavan,Julien Ryckaert,A. Spessot,Diederik Verkest,An Steegen	2016	53
18	Modeling of gain in advanced CMOS technologies TechConnect Briefs ·A. Spessot,Gillian Au,Paolo Fantini,Andrea Marmiroli	2008	0
19	Method for determination of the displacement field in patterned nanostructures by TEM/CBED analysis of split high‐order Laue zone line profiles Journal of Microscopy ·A. Spessot,Stefano Frabboni,R. Balboni,A. Armigliato	2007	12
20	Convergent beam electron diffraction investigation of strain induced by Ti self-aligned silicides in shallow trench Si isolation structures Journal of Applied Physics ·A. Armigliato,A. Spessot,R. Balboni,A. Benedetti,Gianpietro Carnevale,Stefano Frabboni,Victoria Mesa,G. Pavia	2006	13

About A. Spessot

A. Spessot is a scholar working on Structural Biology, Electrical and Electronic Engineering, Hardware and Architecture, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films, having authored 113 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (92 papers), Advancements in Semiconductor Devices and Circuit Design (79 papers), Ferroelectric and Negative Capacitance Devices (28 papers), Integrated Circuits and Semiconductor Failure Analysis (25 papers), Low-power high-performance VLSI design (19 papers), Semiconductor materials and interfaces (7 papers), 3D IC and TSV technologies (6 papers) and Advanced Memory and Neural Computing (5 papers). The work is most often cited by research in Structural Biology (79 citations), Electrical and Electronic Engineering (1.5k citations), Hardware and Architecture (118 citations), Surfaces, Coatings and Films (86 citations) and Biomedical Engineering (223 citations). A. Spessot has collaborated with scholars based in Belgium, United States and Italy. Frequent co-authors include Doyoung Jang, Diederik Verkest, M. Garcia Bardon, A. Mocuta, Julien Ryckaert, P. Schuddinck, Dmitry Yakimets, Naoto Horiguchi, Stefano Frabboni and Geert Eneman. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Japanese Journal of Applied Physics, IEEE Transactions on Device and Materials Reliability and physica status solidi (a).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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