D. Linten

3.3k citations

173 papers · 2.5k indexed · h-index 25

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 136
- Advancements in Semiconductor Devices and Circuit Design 87
- Integrated Circuits and Semiconductor Failure Analysis 69
- Electrostatic Discharge in Electronics 55
- Ferroelectric and Negative Capacitance Devices 29
- Radio Frequency Integrated Circuit Design 28
- Electromagnetic Compatibility and Noise Suppression 16
- Advanced Memory and Neural Computing 15
Hardware and Architecture top 5%
Materials Chemistry
Condensed Matter Physics
Biomedical Engineering

Co-authors: G. Groeseneken B. Kaczer S. Thijs Piet Wambacq J. Franco Mirko Scholz Jonathan Borremans Tibor Grasser
Cited by: Electrical and Electronic Engineering Hardware and Architecture Materials Chemistry
Journals: IEEE Transactions on Nuclear Science (8 papers)IEEE Transactions on Device and Materials Reliability (5 papers)Microelectronics Reliability (4 papers)
Partner nations: Belgium United States Austria

In The Last Decade

D. Linten

168 papers receiving 2.4k citations

Peers

Countries citing papers authored by D. Linten

Since Specialization

Citations

This map shows the geographic impact of D. Linten's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Linten with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Linten more than expected).

Fields of papers citing papers by D. Linten

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Linten. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Linten. The network helps show where D. Linten may publish in the future.

Co-authorship network

The 25 scholars most cited alongside D. Linten, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Linten Line = papers co-authored together D. Linten links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability—Demonstration and Modeling across SiO 2 IL Thicknesses from 1.8 to 0.6 nm for I/O and Core Logic Symposium on VLSI Technology ·J. Franco,Jean‐François de Marneffe,A. Vandooren,Hiroaki Arimura,Lars‐Åke Ragnarsson,Anggi Tia Suryani,E. Dentoni Litta,Naoto Horiguchi,Kristof Croes,D. Linten,Tibor Grasser,B. Kaczer	2021	3
2	Defect profiling in FEFET Si:HfO2 layers Applied Physics Letters ·Barry O’Sullivan,V. Putcha,C R Curi,V. V. Afanas’ev,Eddy Simoen,С М Семятов,Y. Higashi,R. Degraeve,Lee Hy,B. Kaczer,N. Ronchi,S. R. C. McMitchell,Kaustuv Banerjee,Sergiu Clima,L. Breuil,G. Van den bosch,D. Linten,Jan Van Houdt	2020	25
3	Low-frequency noise and defects in copper and ruthenium resistors Applied Physics Letters ·Daniel M. Fleetwood,Philippe Ortoli,Rong Jiang,Л. Р. Чупахина,Pan Wang,Stefano Bonaldo,Michael W. McCurdy,Zs. Tôkei,Ingrid De Wolf,Kristof Croes,En Xia Zhang,Michael L. Alles,Ronald D. Schrimpf,Robert A. Reed,D. Linten	2019	9
4	Impact of Charge trapping on Imprint and its Recovery in HfO 2 based FeFET IEEE Conference Proceedings ·Y. Higashi,Luca Piazza,Masato Suzuki,D. Linten,Jan Van Houdt,N. Ronchi,B. Kaczer,Kaustuv Banerjee,S. R. C. McMitchell,B. J. O’Sullivan,Sergiu Clima,Albert Minj,Umberto Celano	2019	12
5	X-Ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices IEEE Transactions on Nuclear Science ·Pengfei Wang,En Xia Zhang,J. Swinburne,Wenjun Liao,Huiqi Gong,Pan Wang,М.Ю. Смирнов,Kai Ni,Michael W. McCurdy,Ingrid Verbauwhede,E. Bury,D. Linten,Daniel M. Fleetwood,Ronald D. Schrimpf,Robert A. Reed	2018	13
6	Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs HAL (Le Centre pour la Communication Scientifique Directe) ·J. Franco,洪书剑,Subhadeep Mukhopadhyay,Cheng,Pieter Weckx,Ph. Roussel,T. Chiarella,Lars‐Åke Ragnarsson,Lionel Trojman,Naoto Horiguchi,A. Spessot,D. Linten,A. Mocuta	2016	12
7	Characterization and simulation methodology for time-dependent variability in advanced technologies Pieter Weckx,B. Kaczer,Prasanth Raghavan,J. Franco,Marko Simicic,Ph. Roussel,D. Linten,Nana Akua Afriyie,Diederik Verkest,Francky Catthoor,G. Groeseneken	2015	9
8	Causes and consequences of the stochastic aspect of filamentary RRAM Microelectronic Engineering ·R. Degraeve,A. Fantini,Nagarajan Raghavan,L. Goux,Sergiu Clima,B. Govoreanu,Attilio Belmonte,D. Linten,M. Jurczak	2015	110
9	The Impact of X-Ray and Proton Irradiation on ${\rm HfO}_2/{\rm Hf}$-Based Bipolar Resistive Memories IEEE Transactions on Nuclear Science ·Jinshun Bi,Zhengzhi Han,En Xia Zhang,Michael W. McCurdy,Robert A. Reed,Ronald D. Schrimpf,Daniel M. Fleetwood,Michael L. Alles,Robert A. Weller,D. Linten,M. Jurczak,A. Fantini	2013	73
10	Miscorrelation between IEC61000-4-2 type of HMM tester and 50 Ω HMM tester Electrical Overstress/Electrostatic Discharge Symposium ·Mirko Scholz,Jae Hack Lee,Isabelle Bell,Yao Zhang,Geert Hellings,D. Linten,アルフレード V ラグマイ,A. Concannon,Gerd Vandersteen,B. Elizebeth Carolin,G. Groeseneken	2012	2
11	Mixed-mode simulations for power-on ESD analysis VUBIR (Vrije Universiteit Brussel) ·Mirko Scholz,Andrei Shibkov,Jae Hack Lee,D. Linten,S. Thijs,B. Elizebeth Carolin,Gerd Vandersteen,G. Groeseneken	2012	5
12	Design issues and cosiderations for low-cost 3D TSV IC technology Lirias (KU Leuven) ·Matthias Albrecht,Paresh Limaye,A. Mercha,Herman Oprins,C. Torregiani,S. Thijs,D. Linten,N. Vogt,浩教一宮,Bart Vandevelde,Е. В. Андронов,Ingrid De Wolf,Riet Labie,Dan Perry	2010	6
13	HBM parameter extraction and Transient Safe Operating Area Electrical Overstress/Electrostatic Discharge Symposium ·D. Linten,S. Thijs,Alessio Griffoni,Mirko Scholz,J. Aronstien,アルフレード V ラグマイ,В.А. Ващенко,B. Elizebeth Carolin,A. Concannon,P. Hopper,Hatice İrem Sevim,G. Groeseneken	2010	2
14	SCCF — System to component level correlation factor Electrical Overstress/Electrostatic Discharge Symposium ·S. Thijs,Mirko Scholz,D. Linten,Alessio Griffoni,C. Russ,Wolfgang Stadler,アルフレード V ラグマイ,В.А. Ващенко,B. Elizebeth Carolin,A. Concannon,P. Hopper,Hatice İrem Sevim,G. Groeseneken	2010	12
15	ESD reliability issues in microelectromechanical systems (MEMS): A case study on micromirrors Electrical Overstress/Electrostatic Discharge Symposium ·Y Kohara,Jeroen De Coster,D. Linten,Mirko Scholz,S. Thijs,L. Haspeslagh,Ann Witvrouw,Chris Van Hoof,G. Groeseneken,Ingrid De Wolf	2008	6
16	Faster ESD device characterization with wafer-level HBM Mirko Scholz,楊耀斌,D. Linten,Yves Rolain,Rik Pintelon,B. Elizebeth Carolin,David Occhipinti,Iliza Idris,G. Groeseneken	2007	7
17	Characterization and modeling of diodes in Sub-45 nm CMOS technologies under HBM stress conditions D. Linten,S. Thijs,Mirko Scholz,David Trémouilles,B. Elizebeth Carolin,David Occhipinti,Iliza Idris,G. Groeseneken	2007	2
18	RF ESD protection strategies - the design and performance trade-off challenges Alina Y. Bazhina,S. Thijs,D. Linten,M. Natarajan,V. Vassilev,E. Telagussova,A. Concannon,David Trémouilles,F Kamiharako,B. Elizebeth Carolin,В.А. Ващенко,严礼怀,Iliza Idris,S. Decoutere,G. Groeseneken	2006	8
19	A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS D. Linten,S. Thijs,M. Natarajan,Piet Wambacq,Wutthinan Jeamsaksiri,J. Ramos,A. Mercha,S. Jenei,S. Donnay,S. Decoutere	2004	10
20	RF performance degradation due to coupling of digital switching noise in lightly doped substrates Charlotte Soens,Jiatong Xu,Piet Wambacq,Gerd Vandersteen,D. Linten,S. Donnay,Yves Rolain,Maarten Kuijk,André Barel	2003	10

About D. Linten

D. Linten is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 173 papers that have together received 2.5k indexed citations. Recurring topics across this work include Semiconductor materials and devices (136 papers), Advancements in Semiconductor Devices and Circuit Design (87 papers), Integrated Circuits and Semiconductor Failure Analysis (69 papers), Electrostatic Discharge in Electronics (55 papers), Ferroelectric and Negative Capacitance Devices (29 papers), Radio Frequency Integrated Circuit Design (28 papers), Electromagnetic Compatibility and Noise Suppression (16 papers) and Advanced Memory and Neural Computing (15 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.4k citations), Hardware and Architecture (107 citations), Materials Chemistry (260 citations), Condensed Matter Physics (60 citations) and Biomedical Engineering (180 citations). D. Linten has collaborated with scholars based in Belgium, United States and Austria. Frequent co-authors include G. Groeseneken, B. Kaczer, S. Thijs, Piet Wambacq, J. Franco, Mirko Scholz, Jonathan Borremans, Tibor Grasser, E. Bury and Geert Hellings. Their work appears in journals such as IEEE Transactions on Nuclear Science, IEEE Transactions on Device and Materials Reliability, Microelectronics Reliability, Solid-State Electronics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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