Danielle Vanhaeren

612 total citations
38 papers, 460 citations indexed

About

Danielle Vanhaeren is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Danielle Vanhaeren has authored 38 papers receiving a total of 460 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 8 papers in Materials Chemistry. Recurrent topics in Danielle Vanhaeren's work include Semiconductor materials and devices (23 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). Danielle Vanhaeren is often cited by papers focused on Semiconductor materials and devices (23 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). Danielle Vanhaeren collaborates with scholars based in Belgium, United States and Netherlands. Danielle Vanhaeren's co-authors include Wilfried Vandervorst, Trudo Clarysse, I. Hoflijk, Thierry Conard, Tom Janssens, W. Vandervorst, H. Bender, Matty Caymax, Marc Meuris and Gillis Winderickx and has published in prestigious journals such as ACS Nano, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Danielle Vanhaeren

37 papers receiving 446 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Danielle Vanhaeren Belgium 13 381 165 153 72 48 38 460
W. Vandervorst Belgium 10 282 0.7× 92 0.6× 103 0.7× 51 0.7× 48 1.0× 21 331
Nicolò Piluso Italy 14 509 1.3× 104 0.6× 176 1.2× 102 1.4× 130 2.7× 89 656
Masayasu Nishizawa Japan 10 381 1.0× 184 1.1× 199 1.3× 51 0.7× 37 0.8× 30 467
H. K. Yow Malaysia 10 319 0.8× 115 0.7× 197 1.3× 42 0.6× 45 0.9× 46 411
Antonio Rotondaro United States 16 927 2.4× 150 0.9× 223 1.5× 49 0.7× 75 1.6× 54 974
T. K. Chan Singapore 13 299 0.8× 95 0.6× 427 2.8× 84 1.2× 79 1.6× 33 601
L. Chahed Algeria 13 404 1.1× 72 0.4× 355 2.3× 48 0.7× 37 0.8× 59 495
E. Kunnen Belgium 12 371 1.0× 95 0.6× 108 0.7× 97 1.3× 87 1.8× 50 463
Vl. Kolkovsky Germany 12 334 0.9× 169 1.0× 185 1.2× 27 0.4× 56 1.2× 49 425
G. Quintana Argentina 10 283 0.7× 90 0.5× 159 1.0× 51 0.7× 40 0.8× 17 364

Countries citing papers authored by Danielle Vanhaeren

Since Specialization
Citations

This map shows the geographic impact of Danielle Vanhaeren's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Danielle Vanhaeren with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Danielle Vanhaeren more than expected).

Fields of papers citing papers by Danielle Vanhaeren

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Danielle Vanhaeren. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Danielle Vanhaeren. The network helps show where Danielle Vanhaeren may publish in the future.

Co-authorship network of co-authors of Danielle Vanhaeren

This figure shows the co-authorship network connecting the top 25 collaborators of Danielle Vanhaeren. A scholar is included among the top collaborators of Danielle Vanhaeren based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Danielle Vanhaeren. Danielle Vanhaeren is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Soulié, Jean-Philippe, Kiroubanand Sankaran, Kris Vanstreels, et al.. (2022). Properties of ultrathin molybdenum films for interconnect applications. Materialia. 24. 101511–101511. 36 indexed citations
2.
Mortelmans, Wouter, Salim El Kazzi, Ankit Nalin Mehta, et al.. (2019). Peculiar alignment and strain of 2D WSe 2 grown by van der Waals epitaxy on reconstructed sapphire surfaces. Nanotechnology. 30(46). 465601–465601. 25 indexed citations
3.
Celano, Umberto, Feng‐Chun Hsia, Danielle Vanhaeren, et al.. (2018). Mesoscopic physical removal of material using sliding nano-diamond contacts. Scientific Reports. 8(1). 2994–2994. 32 indexed citations
4.
Wostyn, Kurt, Lars‐Åke Ragnarsson, T. Schram, et al.. (2017). The Impact of Dummy Gate Processing on Si-Cap-Free SiGe Passivation: A Physical Characterization Study on Strained SiGe 25% and 45%. ECS Transactions. 80(2). 155–162. 1 indexed citations
5.
Hussin, Razaidi, J. Franco, Danielle Vanhaeren, et al.. (2015). Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. 32. 238–241. 1 indexed citations
6.
John, Joachim, Pierre Eyben, Danielle Vanhaeren, et al.. (2011). Studying Local Aluminum Back Surface Fields (Al-BSF) Contacts through Scanning Spreading Resistance Microscopy (SSRM). EU PVSEC. 1530–1533. 2 indexed citations
7.
Clarysse, Trudo, Guy Brammertz, Danielle Vanhaeren, et al.. (2008). Accurate carrier profiling of n-type GaAs junctions. Materials Science in Semiconductor Processing. 11(5-6). 259–266. 5 indexed citations
8.
Carnel, L., Ivan Gordon, Dries Van Gestel, et al.. (2007). Impact of Preferential P-Diffusion Along the Grain Boundaries on Fine-Grained Polysilicon Solar Cells. IEEE Electron Device Letters. 28(10). 899–901. 2 indexed citations
9.
Tökei, Zsolt, H. Bender, Bert Brijs, et al.. (2007). Materials characterization of WNxCy, WNx and WCx films for advanced barriers. Microelectronic Engineering. 84(11). 2460–2465. 14 indexed citations
10.
Adachi, K., K. Ohuchi, N. Aoki, et al.. (2006). Direct Observation of 2-D Dopant Profiles of MOSFETs Activated by Millisecond Anneal. 104–107. 1 indexed citations
11.
Janssens, Tom, Cedric Huyghebaert, Danielle Vanhaeren, et al.. (2006). Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(1). 510–514. 50 indexed citations
12.
Lenoble, D., A. De Keersgieter, Nadine Collaert, et al.. (2006). Enhanced Performance of PMOS MUGFET via Integration of Conformal Plasma-Doped Source/Drain Extensions. 168–169. 17 indexed citations
13.
Schuhmacher, Jörg, et al.. (2006). Using scaling laws to understand the growth mechanism of atomic layer deposited WNxCy films on methyl-terminated surfaces. Journal of Applied Physics. 100(11). 8 indexed citations
14.
Sibaja-Hernandez, A., Pierre Eyben, Stefaan Van Huylenbroeck, et al.. (2006). 2D-TCAD Process Calibration for a High Speed QSA SiGe:C HBT Verified with SSRM. ECS Transactions. 3(7). 387–395. 9 indexed citations
15.
Augendre, E., Stefan Kubicek, Thomas Hoffmann, et al.. (2006). Superior N- and PMOSFET scalability using carbon co-implantation and spike annealing. 355–358. 1 indexed citations
16.
Puurunen, Riikka L., Annelies Delabie, Sven Van Elshocht, et al.. (2005). Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films. Applied Physics Letters. 86(7). 40 indexed citations
17.
Iacopi, Francesca, et al.. (2004). On factors affecting the extraction of elastic modulus by nanoindentation of organic polymer films. MRS Proceedings. 841. 2 indexed citations
18.
Clarysse, Trudo, et al.. (2004). Characterization of electrically active dopant profiles with the spreading resistance probe. Materials Science and Engineering R Reports. 47(5-6). 123–206. 43 indexed citations
19.
Clarysse, Trudo, Danielle Vanhaeren, & Wilfried Vandervorst. (2002). Impact of probe penetration on the electrical characterization of sub-50 nm profiles. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(1). 459–466. 24 indexed citations
20.
Vázsonyi, É., G. Battistig, Zsolt E. Horváth, et al.. (2000). Pore Propagation Directions in P+ Porous Silicon. Journal of Porous Materials. 7(1-3). 57–61. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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