T. Vandeweyer

1.6k citations

43 papers · 648 indexed · h-index 15

Electrical and Electronic Engineering top 10%
- Advancements in Photolithography Techniques 23
- Semiconductor materials and devices 20
- Integrated Circuits and Semiconductor Failure Analysis 14
- Advancements in Semiconductor Devices and Circuit Design 14
- 3D IC and TSV technologies 7
Surfaces, Coatings and Films top 10%
Structural Biology
Biomedical Engineering
- Advanced Surface Polishing Techniques 11
- Nanowire Synthesis and Applications 4
Hardware and Architecture
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 6

Co-authors: R. Rooyackers M. Jurczak Nadine Collaert Denis Shamiryan Roger Loo M. Demand S. Locorotondo K. De Meyer
Cited by: Electrical and Electronic Engineering Surfaces, Coatings and Films Structural Biology
Journals: IEEE Transactions on Electron Devices (1 paper)IEEE Electron Device Letters (1 paper)Solid-State Electronics (1 paper)
Partner nations: Belgium United States Netherlands

In The Last Decade

T. Vandeweyer

42 papers receiving 608 citations

Peers

Countries citing papers authored by T. Vandeweyer

Since Specialization

Citations

This map shows the geographic impact of T. Vandeweyer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Vandeweyer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Vandeweyer more than expected).

Fields of papers citing papers by T. Vandeweyer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Vandeweyer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Vandeweyer. The network helps show where T. Vandeweyer may publish in the future.

Co-authorship network

The 25 scholars most cited alongside T. Vandeweyer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. Vandeweyer Line = papers co-authored together T. Vandeweyer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Hydrogen recycling for EUV Zachary Dunbar,Remko Aubert,Joost Van Ongeval,T. Vandeweyer,Eric Hendrickx	2023	3
2	In-Line Metrology for Characterization and Control of Extreme Wafer Thinning of Bonded Wafers IEEE Transactions on Semiconductor Manufacturing ·M. Liebens,Anne Jourdain,Joeri De Vos,T. Vandeweyer,Andy Miller,Eric Beyne,S. Li,Gerhard Bast,M. Stoerring,S. Hiebert,Andrew Cross	2018	8
3	In-line metrology for characterization and control of extreme wafer thinning of bonded wafers M. Liebens,Anne Jourdain,Joeri De Vos,T. Vandeweyer,Andy Miller,Eric Beyne,S. Li,Gerhard Bast,M. Stoerring,S. Hiebert,Andrew Cross	2017	1
4	In-Line Critical Dimension and Sidewall Roughness Metrology Study for Compound Nanostructure Process Control by in-Line 3D Atomic Force Microscope ECS Transactions ·Tae‐Gon Kim,Heon-Yul Ryu,Ah-Jin Jo,Sang‐Joon Cho,Sang-il Park,T. Vandeweyer	2016	2
5	Highly reliable TaO<inf>x</inf> ReRAM with centralized filament for 28-nm embedded application Y. Hayakawa,A. Himeno,Ryo Yasuhara,Werner Boullart,E. Vecchio,T. Vandeweyer,T. Witters,D. Crotti,M. Jurczak,Satoshi Fujii,Satoru Ito,Y. Kawashima,Y. Ikeda,Akifumi Kawahara,K. Kawai,Zhiqiang Wei,S. Muraoka,K. Shimakawa,Takumi Mikawa,S. YONEDA	2015	21
6	Ge-Source Vertical Tunnel FETs Using a Novel Replacement-Source Integration Scheme IEEE Transactions on Electron Devices ·R. Rooyackers,A. Vandooren,Anne S. Verhulst,A. Walke,Eddy Simoen,K. Devriendt,S. Locorotondo,M. Demand,George Bryce,Roger Loo,Andriy Hikavyy,T. Vandeweyer,Cedric Huyghebaert,Nadine Collaert,Aaron Thean	2014	35
7	A new complementary hetero-junction vertical Tunnel-FET integration scheme R. Rooyackers,A. Vandooren,Anne S. Verhulst,A. Walke,K. Devriendt,S. Locorotondo,M. Demand,George Bryce,Roger Loo,Andriy Hikavyy,T. Vandeweyer,Cedric Huyghebaert,Nadine Collaert,Aaron Thean	2013	48
8	Self-aligned double patterning of 1× nm FinFETs; A new device integration through the challenging geometry M.-S Kim,T. Vandeweyer,Efrain Altamirano Sánchez,Harold Dekkers,Els Van Besien,D. Tsvetanova,Olivier Richard,Soon Aik Chew,G. Boccardi,Naoto Horiguchi	2013	5
9	Calibration and verification of a stochastic model for EUV resist Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Weimin Gao,Alexander Philippou,Ulrich Klostermann,Joachim Siebert,Vicky Philipsen,Eric Hendrickx,T. Vandeweyer,Gian F. Lorusso	2012	24
10	Process-improved RRAM cell performance and reliability and paving the way for manufacturability and scalability for high density memory application Gouri Sankar Kar,A. Fantini,YY Chen,Vasile Paraschiv,B. Govoreanu,Hubert Hody,N. Jossart,Hilde Tielens,S. Brus,Olivier Richard,T. Vandeweyer,Dirk J. Wouters,L. Altimime,M. Jurczak	2012	12
11	Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques Solid-State Electronics ·A. Redolfi,S. Kubicek,R. Rooyackers,M.-S. Kim,Erik Sleeckx,K. Devriendt,Denis Shamiryan,T. Vandeweyer,Tinne Delande,Naoto Horiguchi,M. Togo,Johan M. Wouters,M. Jurczak,Thomas Hoffmann,Andrew Cockburn,V. Gravey,D. Diehl	2011	13
12	Record low contact resistivity to n-type Ge for CMOS and memory applications Koen Martens,Andrea Firrincieli,R. Rooyackers,Benjamin Vincent,Roger Loo,S. Locorotondo,Erik Rosseel,T. Vandeweyer,Geert Hellings,Brice De Jaeger,Marc Meuris,Paola Favia,H. Bender,Bastien Douhard,J. Delmotte,Wilfried Vandervorst,Eddy Simoen,G. Jurczak,Dirk J. Wouters,J. A. Kittl	2010	18
13	Dense lines created by spacer DPT scheme: process control by local dose adjustment using advanced scanner control Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Jo Finders,Mircea Dusa,Bert Vleeming,Timon Fliervoet,Birgitt Hepp,Henry Megens,Remco Groenendijk,John Quaedackers,E.C. Mos,C.M. Leewis,Frank Bornebroek,Mireille Maenhoudt,M. Leblans,T. Vandeweyer,Gayle Murdoch,Efrain Altamirano Sánchez	2009	6
14	Material Aspects and Challenges for SOI FinFET Integration ECS Transactions ·Mark J. Van Dal,G. Vellianitis,Ray Duffy,G. Doornbos,Bartek Pawlak,B. Duriez,Lhi-Shue Lai,Andriy Hikavyy,T. Vandeweyer,M. Demand,Efraı́n Altamirano,R. Rooyackers,Liesbeth Witters,Nadine Collaert,M. Jurczak,M. Kaiser,R.G.R. Weemaes,R.J.P. Lander	2008	5
15	Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to 10nm and 30nm gate length VUBIR (Vrije Universiteit Brussel) ·Nadine Collaert,K. von Arnim,R. Rooyackers,T. Vandeweyer,A. Mercha,Bertrand Parvais,Liesbeth Witters,A. Nackaerts,Efrain Altamirano Sánchez,M. Demand,Andriy Hikavyy,S. Demuynck,K. Devriendt,Florian Bauer,Isabelle Ferain,A. Veloso,K. De Meyer,S. Biesemans,M. Jurczak	2008	13
16	Manufacturability issues with double patterning for 50-nm half-pitch single damascene applications using RELACS shrink and corresponding OPC Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Maaike Op de Beeck,Janko Versluijs,Vincent Wiaux,T. Vandeweyer,Ivan Ciofi,Herbert Struyf,D. Hendrickx,J. Van Olmen	2007	11
17	Investigation of New Slection Citeria for an Otimized Imersion Process Journal of Photopolymer Science and Technology ·Monique Ercken,Roel Gronheid,Philippe Foubert,N. Stepenenko,T. Vandeweyer,I. Pollentier,H. W. Kim,Shinji Kishimura,Enrico Tenaglia,Christie Delvaux,Myriam Moelants,Kris Baert	2006	3
18	Spacer defined FinFET: Active area patterning of sub-20nm fins with high density Microelectronic Engineering ·B. Degroote,R. Rooyackers,T. Vandeweyer,Nadine Collaert,Werner Boullart,E. Kunnen,Denis Shamiryan,Johan Wouters,J. Van Puymbroeck,Abhisek Dixit,M. Jurczak	2006	26
19	Doubling or quadrupling MuGFET fin integration scheme with higher pattern fidelity, lower CD variation and higher layout efficiency R. Rooyackers,E. Augendre,B. Degroote,Nadine Collaert,A. Nackaerts,Abhisek Dixit,T. Vandeweyer,Bartek Pawlak,Monique Ercken,E. Kunnen,Gabriela Dilliway,F. Leys,Roger Loo,M. Jurczak,S. Biesemans	2006	17
20	Comprehensive approach to MuGFET metrology Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Gian F. Lorusso,Philippe Leray,T. Vandeweyer,Monique Ercken,Christie Delvaux,Ivan Pollentier,Stone Cheng,Nadine Collaert,R. Rooyackers,B. Degroote,M. Jurczak,S. Biesemans,Olivier Richard,H. Bender,A. Azordegan,J. McCormack,S. Shirke,Jerry Prochazka,Timothy E. Long	2006	5

About T. Vandeweyer

T. Vandeweyer is a scholar working on Electrical and Electronic Engineering, Surfaces, Coatings and Films and Biomedical Engineering, having authored 43 papers that have together received 648 indexed citations. Recurring topics across this work include Advancements in Photolithography Techniques (23 papers), Semiconductor materials and devices (20 papers), Integrated Circuits and Semiconductor Failure Analysis (14 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers), Advanced Surface Polishing Techniques (11 papers), 3D IC and TSV technologies (7 papers), Copper Interconnects and Reliability (6 papers) and Nanowire Synthesis and Applications (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (622 citations), Surfaces, Coatings and Films (52 citations) and Structural Biology (5 citations). T. Vandeweyer has collaborated with scholars based in Belgium, United States and Netherlands. Frequent co-authors include R. Rooyackers, M. Jurczak, Nadine Collaert, Denis Shamiryan, Roger Loo, M. Demand, S. Locorotondo, K. De Meyer, Mireille Maenhoudt and Mircea Dusa. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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