E. Vecchio

676 total citations
16 papers, 243 citations indexed

About

E. Vecchio is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, E. Vecchio has authored 16 papers receiving a total of 243 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 7 papers in Biomedical Engineering and 3 papers in Surfaces, Coatings and Films. Recurrent topics in E. Vecchio's work include Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Ferroelectric and Negative Capacitance Devices (4 papers). E. Vecchio is often cited by papers focused on Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Ferroelectric and Negative Capacitance Devices (4 papers). E. Vecchio collaborates with scholars based in Belgium, Japan and Italy. E. Vecchio's co-authors include G. Groeseneken, Goedele Potoms, Luca Piazza, Karine Florent, Simone Lavizzari, M. Popovici, Werner Boullart, S. Muraoka, T. Vandeweyer and M. Jurczak and has published in prestigious journals such as Journal of Applied Physics, Progress in Photovoltaics Research and Applications and ECS Journal of Solid State Science and Technology.

In The Last Decade

E. Vecchio

15 papers receiving 232 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. Vecchio Belgium	9	229	58	23	22	12	16	243
T. Magis France	8	159 0.7×	68 1.2×	13 0.6×	19 0.9×	15 1.3×	18	171
P. Candelier France	12	323 1.4×	46 0.8×	27 1.2×	9 0.4×	12 1.0×	29	337
X. Li Singapore	10	399 1.7×	47 0.8×	46 2.0×	32 1.5×	28 2.3×	19	411
Kensuke Ota Japan	10	387 1.7×	113 1.9×	34 1.5×	41 1.9×	16 1.3×	34	403
Sourav De Germany	13	474 2.1×	90 1.6×	12 0.5×	12 0.5×	21 1.8×	59	491
Md. Hasan Raza Ansari Saudi Arabia	11	267 1.2×	65 1.1×	42 1.8×	30 1.4×	15 1.3×	33	312
Matthew San Jose United States	7	236 1.0×	58 1.0×	9 0.4×	16 0.7×	8 0.7×	9	244
Dong Ik Suh South Korea	8	253 1.1×	124 2.1×	15 0.7×	52 2.4×	12 1.0×	17	299
C. Carabasse France	12	358 1.6×	118 2.0×	57 2.5×	42 1.9×	32 2.7×	39	362
Osbert Cheng Taiwan	12	486 2.1×	51 0.9×	8 0.3×	16 0.7×	9 0.8×	87	497

Countries citing papers authored by E. Vecchio

Since Specialization

Citations

This map shows the geographic impact of E. Vecchio's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Vecchio with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Vecchio more than expected).

Fields of papers citing papers by E. Vecchio

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Vecchio. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Vecchio. The network helps show where E. Vecchio may publish in the future.

Co-authorship network of co-authors of E. Vecchio

This figure shows the co-authorship network connecting the top 25 collaborators of E. Vecchio. A scholar is included among the top collaborators of E. Vecchio based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Vecchio. E. Vecchio is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

Depauw, Valérie, Clément Porret, E. Vecchio, et al.. (2022). Wafer‐scale Ge epitaxial foils grown at high growth rates and released from porous substrates for triple‐junction solar cells. Progress in Photovoltaics Research and Applications. 31(12). 1315–1328. 11 indexed citations

Loo, Roger, et al.. (2021). Epitaxial Ge-on-Nothing and Epitaxial Ge on Si-on-Nothing as Virtual Substrates for 3D Device Stacking Technologies. ECS Journal of Solid State Science and Technology. 10(8). 84003–84003. 3 indexed citations

Delhougne, Romain, A. Arreghini, Erik Rosseel, et al.. (2018). First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices. 203–204. 12 indexed citations

Florent, Karine, Simone Lavizzari, Luca Piazza, et al.. (2017). First demonstration of vertically stacked ferroelectric Al doped HfO<inf>2</inf> devices for NAND applications. T158–T159. 64 indexed citations

Arreghini, A., Romain Delhougne, A. Subirats, et al.. (2017). First Demonstration of SiGe Channel in Macaroni Geometry for Future 3D NAND. 1–4. 8 indexed citations

Vandooren, A., Liesbeth Witters, E. Vecchio, et al.. (2017). Double-gate Si junction-less n-type transistor for high performance Cu-BEOL compatible applications using 3D sequential integration. 1–2. 1 indexed citations

Veloso, A., Zheng Tao, Efrain Altamirano Sánchez, et al.. (2016). Challenges and opportunities of vertical FET devices using 3D circuit design layouts. 1–3. 11 indexed citations

Hayakawa, Y., A. Himeno, Ryo Yasuhara, et al.. (2015). Highly reliable TaO<inf>x</inf> ReRAM with centralized filament for 28-nm embedded application. 21 indexed citations

Hayakawa, Y., A. Himeno, Ryo Yasuhara, et al.. (2015). Highly reliable TaO<inf>x</inf> ReRAM with centralized filament for 28-nm embedded application. T14–T15. 69 indexed citations

10.

Hody, Hubert, Vasile Paraschiv, E. Vecchio, et al.. (2013). Double patterning with dual hard mask for 28nm node devices and below. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8685. 86850P–86850P. 2 indexed citations

11.

Hody, Hubert, Vasile Paraschiv, E. Vecchio, et al.. (2013). Double patterning with dual hard mask for 28-nm node devices and below. Journal of Micro/Nanolithography MEMS and MOEMS. 12(4). 41306–41306. 8 indexed citations

12.

Mitard, Jérôme, Liesbeth Witters, Benjamin Vincent, et al.. (2013). First demonstration of strained Ge-in-STI IFQW pFETs featuring raised SiGe75% S/D, replacement metal gate and germanided local interconnects. 13 indexed citations

13.

Ragnarsson, Lars‐Åke, Christoph Adelmann, Yuichi Higuchi, et al.. (2012). Implementing cubic-phase HfO<inf>2</inf> with κ-value ∼ 30 in low-V<inf>T</inf> replacement gate pMOS devices for improved EOT-Scaling and reliability. 91. 27–28. 9 indexed citations

14.

Boccardi, G., R. Ritzenthaler, M. Togo, et al.. (2012). RMG Tech. Integration in FinFET Devices. 1 indexed citations

15.

Polcari, A., P. Romano, Lina Sabatino, et al.. (2011). Electrical and optical characterization of DNA molecules as a function of concentration in aqueous solution. Journal of Applied Physics. 109(7). 3 indexed citations

16.

Conard, Thierry, Kai Arstila, Thomas Hantschel, et al.. (2009). Composition Quantification of Microelectronics Multilayer Thin Films by EDX: Toward Small Scale Analysis. MRS Proceedings. 1184. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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