B. Govoreanu

6.2k citations

169 papers · 4.3k indexed · h-index 37

Impact in

Electrical and Electronic Engineering top 0.5%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
Polymers and Plastics top 2%
- Transition Metal Oxide Nanomaterials

Papers in

Electrical and Electronic Engineering 157
- Semiconductor materials and devices 118
- Advanced Memory and Neural Computing 93
- Ferroelectric and Negative Capacitance Devices 86
- Advancements in Semiconductor Devices and Circuit Design 49
- Integrated Circuits and Semiconductor Failure Analysis 16
Polymers and Plastics 14
- Transition Metal Oxide Nanomaterials 14

Co-authors: M. Jurczak R. Degraeve Jan Van Houdt G. Groeseneken Dirk J. Wouters Sergiu Clima A. Fantini L. Goux
Journals: IEEE Transactions on Electron Devices (20 papers)IEEE Electron Device Letters (17 papers)Microelectronic Engineering (7 papers)Solid-State Electronics (6 papers)Applied Physics Letters (5 papers)
Partner nations: Belgium United Kingdom Netherlands

In The Last Decade

B. Govoreanu

167 papers receiving 4.2k citations

Peers

Countries citing papers authored by B. Govoreanu

Since Specialization

Citations

This map shows the geographic impact of B. Govoreanu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Govoreanu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Govoreanu more than expected).

Fields of papers citing papers by B. Govoreanu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Govoreanu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Govoreanu. The network helps show where B. Govoreanu may publish in the future.

Co-authors

The 25 scholars most cited alongside B. Govoreanu, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Govoreanu Line = papers co-authored together B. Govoreanu links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Low charge noise quantum dots with industrial CMOS manufacturing npj Quantum Information ·A Tharun, Лепнева М.Л., Clément Godfrin, Aleksandar Shumkovski, Bernard Cuny, Olimjonov Ortigʻali Orifjon oʻgʻli, Lun Guan, George Simion, Massimo Mongillo, Danny Wan, B. Govoreanu, hyunjin Baek, Ruoyu Li, Pol Van Dorpe, Kristiaan De Greve	2024	28
2	Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing IEEE Transactions on Nanotechnology ·Arnout Beckers, Hai, Alexander Grill, B. Kaczer, M. Garcia Bardon, Bertrand Parvais, B. Govoreanu, Kristiaan De Greve, Gaspard Hiblot, Geert Hellings	2023	9
3	Modeling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation Physical review. B. ·Лепнева М.Л., George Simion, Ruoyu Li, Fahd A. Mohiyaddin, Danny Wan, Massimo Mongillo, B. Govoreanu, Iuliana Radu, Kristiaan De Greve, Pol Van Dorpe	2023	21
4	Comprehensive 300 mm process for Silicon spin qubits with modular integration Arul Baskar, Clément Godfrin, Diego A. Echeverri Marín, Florentina Piciu, Stefan Kubicek, Bernard Cuny, Olimjonov Ortigʻali Orifjon oʻgʻli, Julien Jussot, Andriy Hikavyy, Roger Loo, George Simion, Massimo Mongillo, Danny Wan, B. Govoreanu, Ruoyu Li, Iuliana Radu, Pol Van Dorpe, Kristiaan De Greve	2023	2
5	Multiplexed superconducting qubit control at millikelvin temperatures with a low-power cryo-CMOS multiplexer Nature Electronics ·Zu‐qiang Bian, S. Brebels, Alexander Grill, Tongmin He, Ts. Ivanov, Daniel Pérez Lozano, Danny Wan, Hao Peng, Şerif Birinç, Massimo Mongillo, B. Govoreanu, Jan Craninckx, Iuliana Radu, Kristiaan De Greve, Georges Gielen, Francky Catthoor, Anton Potočnik	2023	25
6	Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation Quantum Science and Technology ·Anton Potočnik, S. Brebels, Tongmin He, Petr DobrovolnÃ ⁄, Alexander Grill, Danny Wan, Massimo Mongillo, Ruoyu Li, Paola Orrù, Hanadi Ghanem, Fahd A. Mohiyaddin, B. Govoreanu, Jan Craninckx, Iuliana Radu	2021	16
7	Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part I: Theory IEEE Transactions on Electron Devices ·Hai, Alexander Grill, Dominic Waldhoer, Wolfgang Goes, B. Kaczer, Dimitri Linten, Bertrand Parvais, B. Govoreanu, Iuliana Radu, Michael Waltl, Tibor Grasser	2021	12
8	Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part II: Experimental IEEE Transactions on Electron Devices ·Hai, Alexander Grill, Dominic Waldhoer, Wolfgang Goes, B. Kaczer, Dimitri Linten, Bertrand Parvais, B. Govoreanu, Iuliana Radu, Tibor Grasser, Michael Waltl	2021	8
9	High mobility SiMOSFETs fabricated in a full 300 mm CMOS process edoc (University of Basel) ·Axel Birk, A Tharun, Fahd A. Mohiyaddin, Amuno Elo Oghale, Stefan Kubicek, Julien Jussot, Pol Van Dorpe, B. Govoreanu, Iuliana Radu, Dominik M. Zumbühl	2021	10
10	Fabrication and room temperature characterization of trilayer junctions for the development of superconducting qubits on 300 mm wafers Japanese Journal of Applied Physics ·Danny Wan, Sébastien Couet, Kenji Tsukahara, Laurent Souriau, Olimjonov Ortigʻali Orifjon oʻgʻli, D. Tsvetanova, P Abraham Bagbila, Andris Smolovskis, Antoine Pacco, Anton Potočnik, Massimo Mongillo, Paola Orrù, Julien Jussot, Tongmin He, Petr DobrovolnÃ ⁄, Frédéric Lazzarino, B. Govoreanu, Iuliana Radu	2021	10
11	Multiphysics Simulation & Design of Silicon Quantum Dot Qubit Devices IEEE Conference Proceedings ·Fahd A. Mohiyaddin, C. Vicini, D.I. Varlamov, A. Spessot, Prachand Man Pradhan, H. David Winslow, B. Govoreanu, Kevin Lauderdale, George Simion, J Jalal Shokokuhi, Amuno Elo Oghale, Florin Ciubotaru, Geert Eneman, F. M. Bufler, Stefan Kubicek, Julien Jussot	2019	3
12	Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO₂ RRAM and Their Impacts on RTN Amplitude Distribution IEEE Transactions on Electron Devices ·Abdullayev Olimjon Obidjon o'g'li, Zheng Chai, Wei Dong Zhang, J. F. Zhang, Zhigang Ji, B. Benbakhti, B. Govoreanu, Eddy Simoen, Ludovic Goux, Attilio Belmonte, R. Degraeve, Gouri Sankar Kar, M. Jurczak	2018	9
13	Probing the Critical Region of Conductive Filament in Nanoscale HfO₂ Resistive-Switching Device by Random Telegraph Signals IEEE Transactions on Electron Devices ·Zheng Chai, Abdullayev Olimjon Obidjon o'g'li, Wei Dong Zhang, B. Govoreanu, J. F. Zhang, Zhigang Ji, M. Jurczak	2017	13
14	Doped GeSe materials for selector applications Yi-Lin Jan, B. Govoreanu, Karl Opsomer, Wouter Devulder, Sergiu Clima, Christophe Detavernier, Mara Cistina Pessoa da Cruz, Jan Van Houdt, 宜志川村, L. Goux, Gouri Sankar Kar	2017	24
15	Te-based chalcogenide materials for selector applications Scientific Reports ·Alin Velea, Karl Opsomer, Wouter Devulder, Jasmien Dumortier, Jiandong Fan, Christophe Detavernier, M. Jurczak, B. Govoreanu	2017	130
16	Tailoring switching and endurance / retention reliability characteristics of HfO<inf>2</inf> / Hf RRAM with Ti, Al, Si dopants Faye F. Gao, Stefano Concadoro, A. Redolfi, R. Degraeve, D. Crotti, A. Fantini, Sergiu Clima, B. Govoreanu, N Momigliano, L. Goux, 昭文西川, Attilio Belmonte, Qiyuan Xie, Jan Willem Maes, Geoffrey Pourtois, M. Jurczak	2014	29
17	Intrinsic switching variability in HfO2 RRAM: A theoretical and experimental study A. Fantini, Ludovic Goux, R. Degraeve, Dirk J. Wouters, Praveen Raghavan, Gouri Sankar Kar, Attilio Belmonte, Yang Yin Chen, B. Govoreanu, M. Jurczak	2013	11
18	Modeling RRAM set/reset statistics resulting in guidelines for optimized operation Symposium on VLSI Technology ·R. Degraeve, A. Fantini, Nagarajan Raghavan, Faye F. Gao, L. Goux, Sergiu Clima, Stefan Cosemans, B. Govoreanu, Dirk J. Wouters, Ph. Roussel, Gouri Sankar Kar, G. Groeseneken, M. Jurczak	2013	17
19	Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells Symposium on VLSI Technology ·L. Goux, R. Degraeve, B. Govoreanu, Bintang Kusuma Nata, V. V. Afanas’ev, Johan Meersschaut, Dr Teshi Sohang, F. K. H., Stefan Kubicek, Olivier Richard, J. A. Kittl, Dirk J. Wouters, M. Jurczak, L. Altimime	2011	4
20	Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potential Symposium on VLSI Technology ·Małgorzata Pawlak, B. Kaczer, D Dobrott, Minsoo Kim, M. Popovici, Johan Swerts, Kazuyuki Tomida, Karl Opsomer, Marc Schaekers, C. Vrancken, B. Govoreanu, Attilio Belmonte, C. Demeurisse, I. Debusschere, L. Altimime, V. V. Afanas’ev, J. A. Kittl	2011	4

About B. Govoreanu

B. Govoreanu is a scholar working on Electrical and Electronic Engineering, Polymers and Plastics, Materials Chemistry, Atomic and Molecular Physics, and Optics and Bioengineering, having authored 169 papers that have together received 4.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (118 papers), Advanced Memory and Neural Computing (93 papers), Ferroelectric and Negative Capacitance Devices (86 papers), Advancements in Semiconductor Devices and Circuit Design (49 papers), Electronic and Structural Properties of Oxides (27 papers), Quantum and electron transport phenomena (23 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers) and Transition Metal Oxide Nanomaterials (14 papers). The work is most often cited by research in Electrical and Electronic Engineering (4.1k citations), Polymers and Plastics (575 citations), Cellular and Molecular Neuroscience (610 citations), Materials Chemistry (1.1k citations) and Atomic and Molecular Physics, and Optics (331 citations). B. Govoreanu has collaborated with scholars based in Belgium, United Kingdom and Netherlands. Frequent co-authors include M. Jurczak, R. Degraeve, Jan Van Houdt, G. Groeseneken, Dirk J. Wouters, Sergiu Clima, A. Fantini, L. Goux, Gouri Sankar Kar and Pieter Blomme. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Microelectronic Engineering, Solid-State Electronics and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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