T. Witters

1.1k total citations
59 papers, 829 citations indexed

About

T. Witters is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, T. Witters has authored 59 papers receiving a total of 829 indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 17 papers in Materials Chemistry and 10 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in T. Witters's work include Semiconductor materials and devices (42 papers), Advanced Memory and Neural Computing (18 papers) and Integrated Circuits and Semiconductor Failure Analysis (14 papers). T. Witters is often cited by papers focused on Semiconductor materials and devices (42 papers), Advanced Memory and Neural Computing (18 papers) and Integrated Circuits and Semiconductor Failure Analysis (14 papers). T. Witters collaborates with scholars based in Belgium, Netherlands and United States. T. Witters's co-authors include Olivier Richard, Matty Caymax, B. Govoreanu, Stefan De Gendt, Chao Zhao, M. Jurczak, A. Redolfi, Gouri Sankar Kar, V. V. Afanas’ev and T. Schram and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

T. Witters

54 papers receiving 798 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Witters Belgium 17 759 408 103 85 76 59 829
Soo Gil Kim South Korea 18 619 0.8× 376 0.9× 75 0.7× 123 1.4× 34 0.4× 32 779
Shujing Jia China 11 435 0.6× 343 0.8× 63 0.6× 107 1.3× 53 0.7× 29 552
H. García Spain 17 816 1.1× 345 0.8× 113 1.1× 54 0.6× 125 1.6× 90 891
El Mostafa Bourim South Korea 15 515 0.7× 333 0.8× 78 0.8× 140 1.6× 65 0.9× 30 667
Xinhong Cheng China 16 754 1.0× 405 1.0× 101 1.0× 65 0.8× 86 1.1× 91 889
D. J. Wouters Belgium 12 621 0.8× 295 0.7× 55 0.5× 108 1.3× 33 0.4× 33 683
A. Roule France 15 448 0.6× 332 0.8× 109 1.1× 73 0.9× 53 0.7× 29 534
Y. A. Kryukov United States 9 448 0.6× 427 1.0× 87 0.8× 153 1.8× 52 0.7× 11 545
S.O. Park South Korea 10 485 0.6× 506 1.2× 133 1.3× 142 1.7× 45 0.6× 26 621
S. Hall United Kingdom 19 1.1k 1.5× 400 1.0× 100 1.0× 102 1.2× 195 2.6× 112 1.2k

Countries citing papers authored by T. Witters

Since Specialization
Citations

This map shows the geographic impact of T. Witters's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Witters with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Witters more than expected).

Fields of papers citing papers by T. Witters

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Witters. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Witters. The network helps show where T. Witters may publish in the future.

Co-authorship network of co-authors of T. Witters

This figure shows the co-authorship network connecting the top 25 collaborators of T. Witters. A scholar is included among the top collaborators of T. Witters based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Witters. T. Witters is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Thesberg, Mischa, Xilin Zhou, Gabriele Luca Donadio, et al.. (2022). Monolithic TCAD simulation of phase-change memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) selector device. Solid-State Electronics. 199. 108504–108504.
2.
Golshani, Negin, T. Witters, J. C. McGurk, et al.. (2021). Low-loss, low-temperature PVD SiN waveguides. 1–2. 2 indexed citations
3.
Fantini, A., Hubert Hody, T. Witters, et al.. (2021). Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability. Lirias (KU Leuven). 1–4. 1 indexed citations
4.
Garbin, Daniele, Gabriele Luca Donadio, Hubert Hody, et al.. (2020). Carbon-Based Liner for RESET Current Reduction in Self-Heating Phase- Change Memory Cells. IEEE Transactions on Electron Devices. 67(10). 4228–4233. 5 indexed citations
5.
Radhakrishnan, J., Attilio Belmonte, T. Witters, et al.. (2018). On the Key Impact of Composition of Ge-Te and Ge-Se Electrolytes on CBRAM Properties. 42. 1–4. 2 indexed citations
6.
Hayakawa, Y., A. Himeno, Ryo Yasuhara, et al.. (2015). Highly reliable TaO<inf>x</inf> ReRAM with centralized filament for 28-nm embedded application. 21 indexed citations
7.
8.
Suhard, Samuel, K. Vandersmissen, Patrick Jaenen, et al.. (2012). 3D integration challenges for fine pitch back side micro-bumping on ZoneBOND™ wafers. 1–5. 1 indexed citations
9.
Swerts, Johan, Silvia Armini, L. Carbonell, et al.. (2011). Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 30(1). 14 indexed citations
10.
Li, Zilan, et al.. (2009). Oxygen incorporation in TiN for metal gate work function tuning with a replacement gate integration approach. Microelectronic Engineering. 87(9). 1805–1807. 18 indexed citations
11.
Li, Zhe, T. Schram, L. Pantisano, et al.. (2007). Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates. Microelectronic Engineering. 84(9-10). 2213–2216. 1 indexed citations
12.
Li, Zilan, T. Schram, T. Witters, et al.. (2007). Investigation on Molybdenum and Its Conductive Oxides as p-type Metal Gate Candidates. ECS Transactions. 11(4). 575–583. 3 indexed citations
13.
Witte, H. De, T. Witters, Chao Zhao, et al.. (2006). Evaluation of Atomic Layer Deposited NbN and NbSiN as Metal Gate Materials. Journal of The Electrochemical Society. 153(5). G437–G437. 14 indexed citations
14.
Elshocht, Sven Van, P. Lehnen, A. Abrutis, et al.. (2006). Metallorganic Chemical Vapor Deposition of Dysprosium Scandate High-k Layers Using mmp-Type Precursors. Journal of The Electrochemical Society. 153(9). F219–F219. 18 indexed citations
15.
Elshocht, Sven Van, An Hardy, Stefan De Gendt, et al.. (2006). Alternative Gate Dielectric Materials. ECS Transactions. 3(3). 479–497. 2 indexed citations
16.
Yu, H.Y., Tom Janssens, T. Witters, et al.. (2006). Effective Work Function Modulation by As Implantation in Metal Gate Stacks.. ECS Meeting Abstracts. MA2006-01(9). 381–381. 1 indexed citations
17.
Heeg, T., Martin Wagner, J. Schubert, et al.. (2006). Rare-earth Metal Scandate High-k Layers: Promises and Problems. ECS Meeting Abstracts. MA2005-02(13). 505–505.
18.
Zhao, Chao, T. Witters, Bert Brijs, et al.. (2005). Ternary rare-earth metal oxide high-k layers on silicon oxide. Applied Physics Letters. 86(13). 115 indexed citations
19.
Kaushik, V., E. Röhr, Stefan De Gendt, et al.. (2003). Effects of interactions between HfO<sub>2</sub> and poly-Si on MOSCAP and MOSFET electrical behavior. 745. 62–63. 2 indexed citations
20.
Claes, Martine, Stefan De Gendt, T. Witters, et al.. (2002). Screening the High-k Layer Quality by Means of Open Circuit Potential Analysis and Wet Chemical Etching. MRS Proceedings. 745. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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