A. Walke

920 total citations
32 papers, 616 citations indexed

About

A. Walke is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. Walke has authored 32 papers receiving a total of 616 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. Walke's work include Semiconductor materials and devices (21 papers), Ferroelectric and Negative Capacitance Devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). A. Walke is often cited by papers focused on Semiconductor materials and devices (21 papers), Ferroelectric and Negative Capacitance Devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). A. Walke collaborates with scholars based in Belgium, India and United States. A. Walke's co-authors include Nadine Collaert, A. Vandooren, Aaron Thean, Anne S. Verhulst, R. Rooyackers, G. Groeseneken, Jan Van Houdt, M. Popovici, Andriy Hikavyy and Valipe Ramgopal Rao and has published in prestigious journals such as IEEE Transactions on Electron Devices, Journal of Crystal Growth and IEEE Electron Device Letters.

In The Last Decade

A. Walke

29 papers receiving 601 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
A. Walke Belgium	16	598	148	120	41	17	32	616
Hiroaki Arimura Belgium	15	620 1.0×	95 0.6×	95 0.8×	82 2.0×	12 0.7×	96	651
R. Ritzenthaler Belgium	17	1.1k 1.8×	83 0.6×	116 1.0×	76 1.9×	8 0.5×	121	1.1k
Jin Cai United States	15	638 1.1×	133 0.9×	106 0.9×	67 1.6×	5 0.3×	47	709
M. Togo Japan	14	599 1.0×	66 0.4×	69 0.6×	62 1.5×	7 0.4×	68	619
S. Brus Belgium	13	469 0.8×	98 0.7×	56 0.5×	86 2.1×	7 0.4×	48	492
F. Andrieu France	15	803 1.3×	50 0.3×	94 0.8×	52 1.3×	8 0.5×	60	810
Ankit Jain United States	9	571 1.0×	103 0.7×	72 0.6×	79 1.9×	4 0.2×	17	594
Reza Arghavani United States	12	450 0.8×	55 0.4×	76 0.6×	60 1.5×	11 0.6×	30	479
Hamed F. Dadgour United States	14	663 1.1×	47 0.3×	131 1.1×	118 2.9×	6 0.4×	19	685
M.F. Li Singapore	11	598 1.0×	110 0.7×	45 0.4×	69 1.7×	11 0.6×	20	612

Countries citing papers authored by A. Walke

Since Specialization

Citations

This map shows the geographic impact of A. Walke's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Walke with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Walke more than expected).

Fields of papers citing papers by A. Walke

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Walke. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Walke. The network helps show where A. Walke may publish in the future.

Co-authorship network of co-authors of A. Walke

This figure shows the co-authorship network connecting the top 25 collaborators of A. Walke. A scholar is included among the top collaborators of A. Walke based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Walke. A. Walke is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Walke, A., et al.. (2024). Study of Endurance Performance of SiO₂ Interfacial Layer Scaling Through O Scavenging in Si Channel n-FeFET With Si:HfO₂ Ferroelectric Layer. IEEE Transactions on Electron Devices. 71(8). 4619–4625. 6 indexed citations

Xiang, Yang, Mohit Gupta, Manu Perumkunnil, et al.. (2024). Design Space Exploration of FeRAM Bit Cell for DRAM Application. IEEE Transactions on Electron Devices. 71(9). 5380–5387. 5 indexed citations

Ronchi, N., A. Walke, M. Popovici, et al.. (2024). A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs. IEEE Electron Device Letters. 45(8). 1453–1456. 2 indexed citations

Lozano, Daniel Pérez, Jean-Philippe Soulié, A. Walke, et al.. (2024). Two Metal Level Semi-Damascene Interconnects for Superconducting Digital Logic. 1–3.

Ronchi, N., Kaustuv Banerjee, A. Walke, et al.. (2024). Understanding the Time Dependent Write and Read Performance of IGZO-channel FeFETs. Lirias (KU Leuven). 661–664.

Subhechha, Subhali, A. Walke, M. Popovici, et al.. (2024). Novel Design Strategy for High-Endurance $(> 10^{10})$ and Fast-Erase Oxide-Semiconductor Channel FeFET. 1–4.

Walke, A., M. Popovici, Harinarayanan Puliyalil, et al.. (2024). La Doped HZO-Based 3D-Trench Metal-Ferroelectric-Metal Capacitors With High-Endurance (>10¹²) for FeRAM Applications. IEEE Electron Device Letters. 45(4). 578–581. 19 indexed citations

Walke, A., Sergiu Clima, M. Popovici, & Jan Van Houdt. (2024). Understanding Anti-ferroelectric Behavior and Wake-up in La Doped HZO Metal-FerroelectricMetal Capacitors Using Nucleation Limited Switching Model. Lirias (KU Leuven). 565–568. 2 indexed citations

McMitchell, S. R. C., A. Walke, Kaustuv Banerjee, et al.. (2023). Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride. ACS Applied Electronic Materials. 5(2). 858–864. 16 indexed citations

10.

Popovici, M., Paola Favia, Sergiu Clima, et al.. (2022). High performance La-doped HZO based ferroelectric capacitors by interfacial engineering. 2022 International Electron Devices Meeting (IEDM). 6.4.1–6.4.4. 34 indexed citations

11.

Vais, Abhitosh, Liesbeth Witters, Y. Mols, et al.. (2021). DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates. VUBIR (Vrije Universiteit Brussel). 89–92. 3 indexed citations

12.

Vais, Abhitosh, Liesbeth Witters, Y. Mols, et al.. (2019). First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering. VUBIR (Vrije Universiteit Brussel). 9.1.1–9.1.4. 18 indexed citations

13.

Walke, A., et al.. (2017). Improving the Electrical Performance of a Quantum Well FET With a Shell Doping Profile by Heterojunction Optimization. IEEE Transactions on Electron Devices. 64(9). 3563–3568. 7 indexed citations

14.

Kazzi, Salim El, A. Alian, Po-Chun Hsu, et al.. (2017). Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode. Journal of Crystal Growth. 484. 86–91. 4 indexed citations

15.

Mallik, A., A. Vandooren, Liesbeth Witters, et al.. (2017). The impact of sequential-3D integration on semiconductor scaling roadmap. VUBIR (Vrije Universiteit Brussel). 35 indexed citations

16.

Vandooren, A., Bertrand Parvais, Liesbeth Witters, et al.. (2017). 3D technologies for analog/RF applications. 1–3. 6 indexed citations

17.

Vandooren, A., A. Walke, Anne S. Verhulst, et al.. (2014). Investigation of the Subthreshold Swing in Vertical Tunnel-FETs Using ${\rm H}_{2}$ and ${\rm D}_{2}$ Anneals. IEEE Transactions on Electron Devices. 61(2). 359–364. 22 indexed citations

18.

Rooyackers, R., A. Vandooren, Anne S. Verhulst, et al.. (2014). Ge-Source Vertical Tunnel FETs Using a Novel Replacement-Source Integration Scheme. IEEE Transactions on Electron Devices. 61(12). 4032–4039. 35 indexed citations

19.

Walke, A., A. Vandooren, R. Rooyackers, et al.. (2014). Fabrication and Analysis of a ${\rm Si}/{\rm Si}_{0.55}{\rm Ge}_{0.45}$ Heterojunction Line Tunnel FET. IEEE Transactions on Electron Devices. 61(3). 707–715. 120 indexed citations

20.

Rooyackers, R., A. Vandooren, Anne S. Verhulst, et al.. (2013). A new complementary hetero-junction vertical Tunnel-FET integration scheme. 4.2.1–4.2.4. 48 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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