K.K. Young

2.0k total citations · 1 hit paper
39 papers, 1.5k citations indexed

About

K.K. Young is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, K.K. Young has authored 39 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 8 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in K.K. Young's work include Semiconductor materials and devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Semiconductor materials and interfaces (10 papers). K.K. Young is often cited by papers focused on Semiconductor materials and devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Semiconductor materials and interfaces (10 papers). K.K. Young collaborates with scholars based in United States, Taiwan and Italy. K.K. Young's co-authors include Chenming Hu, J.A. Burns, C. Hu, S. Holland, Chih‐Yung Chang, T.Y. Chan, Yao-Ching Ku, Anthony Yen, C.H. Diaz and N.W. Cheung and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

K.K. Young

37 papers receiving 1.4k citations

Hit Papers

Short-channel effect in fully depleted SOI MOSFETs 1989 2026 2001 2013 1989 200 400 600
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Short-channel effect in fully depleted SOI MOSFETs
    1989 675 citations K.K. Young IEEE Transactions on Electron Devices profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K.K. Young United States 12 1.4k 190 152 112 86 39 1.5k
D. Frohman‐Bentchkowsky Israel 21 1.4k 1.0× 77 0.4× 348 2.3× 158 1.4× 64 0.7× 33 1.5k
Chenming Hu United States 22 1.9k 1.4× 254 1.3× 260 1.7× 242 2.2× 128 1.5× 64 2.0k
Katsuyoshi Washio Japan 20 1.2k 0.8× 169 0.9× 216 1.4× 215 1.9× 37 0.4× 157 1.3k
T. Tsukada Japan 16 834 0.6× 154 0.8× 151 1.0× 282 2.5× 24 0.3× 65 881
P. Fazan United States 17 1.2k 0.9× 186 1.0× 282 1.9× 188 1.7× 123 1.4× 115 1.3k
Meishoku Masahara Japan 25 2.4k 1.7× 371 2.0× 204 1.3× 200 1.8× 53 0.6× 232 2.5k
B.P. Linder United States 22 1.8k 1.3× 68 0.4× 251 1.7× 150 1.3× 120 1.4× 85 1.8k
Ih-Chin Chen United States 10 957 0.7× 47 0.2× 188 1.2× 81 0.7× 121 1.4× 23 987
Joo Tae Moon South Korea 15 683 0.5× 82 0.4× 371 2.4× 71 0.6× 125 1.5× 61 806
Khaled Ahmed United States 20 1.5k 1.1× 177 0.9× 435 2.9× 218 1.9× 69 0.8× 69 1.7k

Countries citing papers authored by K.K. Young

Since Specialization
Citations

This map shows the geographic impact of K.K. Young's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.K. Young with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.K. Young more than expected).

Fields of papers citing papers by K.K. Young

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.K. Young. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.K. Young. The network helps show where K.K. Young may publish in the future.

Co-authorship network of co-authors of K.K. Young

This figure shows the co-authorship network connecting the top 25 collaborators of K.K. Young. A scholar is included among the top collaborators of K.K. Young based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K.K. Young. K.K. Young is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Roy, Rahul, et al.. (2006). Thyristor-Based Volatile Memory in Nano-Scale CMOS. 2612–2621. 4 indexed citations
2.
Diaz, C.H., et al.. (2001). An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling. IEEE Electron Device Letters. 22(6). 287–289. 110 indexed citations
3.
Lin, Yung‐Hsiang, et al.. (2001). On the SiO2 based gate-dielectric scaling limit for low-standby power applications in the context of a 0.13 μm CMOS logic technology. 1 indexed citations
4.
Chao, Tien‐Sheng, et al.. (1997). Improved flash cell performance by N/sub 2/O annealing of interpoly oxide. IEEE Electron Device Letters. 18(7). 343–345. 7 indexed citations
5.
Chao, Tien‐Sheng, Horng‐Chih Lin, Len-Yi Leu, et al.. (1997). A Radiation-Hard Flash Cell Using Horn-Shaped Floating Gate and N2O Annealing. 1 indexed citations
6.
7.
Jiang, Tao, K.K. Young, N.W. Cheung, & Chenming Hu. (1992). Comparison of Electromigration Reliability of Tungsten and Aluminum Vias Under DC and Time-Varying Current Stressing. 338–343. 8 indexed citations
8.
Jiang, Tao, K.K. Young, N.W. Cheung, & Chenming Hu. (1992). Comparison of electromigration reliability of tungsten and aluminum vias under DC and time-varying current stressing. 8. 338–343. 9 indexed citations
9.
Jiang, Tao, et al.. (1991). Electromigration characteristics of tungsten plug vias under pulse and bidirectional current stressing. IEEE Electron Device Letters. 12(12). 646–648. 12 indexed citations
10.
Kahn, Antoine, K. Stiles, D. Mao, et al.. (1989). Formation of schottky barriers on GaAs(110): from adsorbate-lnduced gap states to interface metallicity. Journal of Electronic Materials. 18(1). 33–37. 4 indexed citations
11.
Mao, D., K.K. Young, Antoine Kahn, et al.. (1989). Photoemission study ofCaF2- andSrF2-GaAs(110) interfaces formed at room temperature. Physical review. B, Condensed matter. 39(17). 12735–12742. 11 indexed citations
12.
Young, K.K.. (1989). Analysis of conduction in fully depleted SOI MOSFETs. IEEE Transactions on Electron Devices. 36(3). 504–506. 116 indexed citations
13.
Young, K.K., et al.. (1989). Structural studies of (331) GaAs surface. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 7(3). 2039–2043. 4 indexed citations
14.
Young, K.K. & J.A. Burns. (1988). Avalanche-induced drain-source breakdown in silicon-on-insulator n-MOSFETs. IEEE Transactions on Electron Devices. 35(4). 426–431. 77 indexed citations
15.
Young, K.K., Chenming Hu, & W.G. Oldham. (1988). Charge transport and trapping characteristics in thin nitride-oxide stacked films. IEEE Electron Device Letters. 9(11). 616–618. 21 indexed citations
16.
Chan, T.Y., K.K. Young, & Chenming Hu. (1987). A true single-transistor oxide-nitride-oxide EEPROM device. IEEE Electron Device Letters. 8(3). 93–95. 70 indexed citations
17.
Young, K.K., Chenming Hu, & W.G. Oldham. (1987). Charge transport and trapping model for scaled nitride-oxide stacked films. Applied Surface Science. 30(1-4). 171–179. 7 indexed citations
18.
Young, K.K., T.Y. Chan, Chenming Hu, & W.G. Oldham. (1986). Hole Trapping and Hot-Carrier Induced Device Instability in Thin Nitride/Oxide IGFETs. Symposium on VLSI Technology. 65–66. 3 indexed citations
19.
Young, K.K. & A. Kahn. (1986). Structural studies of (511) and (711) GaAs surface. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(4). 1091–1094. 9 indexed citations
20.
Holland, S., et al.. (1986). Substrate hole current and oxide breakdown. Applied Physics Letters. 49(11). 669–671. 156 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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