Erik Rosseel

3.3k total citations
151 papers, 1.8k citations indexed

About

Erik Rosseel is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Erik Rosseel has authored 151 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 115 papers in Electrical and Electronic Engineering, 63 papers in Atomic and Molecular Physics, and Optics and 27 papers in Condensed Matter Physics. Recurrent topics in Erik Rosseel's work include Semiconductor materials and devices (69 papers), Advancements in Semiconductor Devices and Circuit Design (46 papers) and Silicon and Solar Cell Technologies (44 papers). Erik Rosseel is often cited by papers focused on Semiconductor materials and devices (69 papers), Advancements in Semiconductor Devices and Circuit Design (46 papers) and Silicon and Solar Cell Technologies (44 papers). Erik Rosseel collaborates with scholars based in Belgium, United States and Japan. Erik Rosseel's co-authors include M. J. Van Bael, M. Baert, V. V. Moshchalkov, Y. Bruynseraede, K. Temst, R. Jonckheere, Wilfried Vandervorst, V. Metlushko, Y. Bruynseraede and Roger Loo and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Erik Rosseel

134 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Erik Rosseel Belgium 22 1.0k 967 698 269 237 151 1.8k
F. Pardo United States 20 611 0.6× 830 0.9× 330 0.5× 381 1.4× 131 0.6× 69 1.4k
Yu-Pin Lan Taiwan 27 1.5k 1.5× 1.2k 1.3× 346 0.5× 298 1.1× 325 1.4× 94 2.0k
Jürgen Lindner Germany 20 1.2k 1.1× 492 0.5× 413 0.6× 190 0.7× 263 1.1× 80 1.5k
Masahiro Aoyagi Japan 17 442 0.4× 1.1k 1.1× 608 0.9× 258 1.0× 130 0.5× 219 1.6k
K.J. Ebeling Germany 28 1.3k 1.2× 2.1k 2.2× 518 0.7× 214 0.8× 250 1.1× 162 2.6k
J. Sudijono United States 17 717 0.7× 522 0.5× 344 0.5× 155 0.6× 331 1.4× 37 1.3k
V. Metlushko United States 27 1.7k 1.7× 539 0.6× 1.1k 1.6× 544 2.0× 313 1.3× 100 2.3k
Manjul Bhushan United States 18 416 0.4× 918 0.9× 549 0.8× 558 2.1× 72 0.3× 51 1.5k
D.I. Babic United States 26 1.3k 1.3× 2.1k 2.2× 457 0.7× 138 0.5× 342 1.4× 113 2.4k
B. Ocker Germany 25 1.6k 1.5× 1.1k 1.1× 537 0.8× 230 0.9× 757 3.2× 63 2.3k

Countries citing papers authored by Erik Rosseel

Since Specialization
Citations

This map shows the geographic impact of Erik Rosseel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Erik Rosseel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Erik Rosseel more than expected).

Fields of papers citing papers by Erik Rosseel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Erik Rosseel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Erik Rosseel. The network helps show where Erik Rosseel may publish in the future.

Co-authorship network of co-authors of Erik Rosseel

This figure shows the co-authorship network connecting the top 25 collaborators of Erik Rosseel. A scholar is included among the top collaborators of Erik Rosseel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Erik Rosseel. Erik Rosseel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rosseel, Erik, Clément Porret, Roger Loo, et al.. (2024). Source/Drain Epitaxy for Nanosheet-Based CFET Devices. ECS Transactions. 114(2). 29–36. 2 indexed citations
2.
Rosseel, Erik, Clément Porret, Roger Loo, et al.. (2024). Source/Drain Epitaxy for Nanosheet-Based CFET Devices. ECS Meeting Abstracts. MA2024-02(32). 2298–2298.
3.
Eyben, Pierre, A. De Keersgieter, Hans Mertens, et al.. (2024). Direct Extraction of Contact and S/D epi Access Resistance Components on 45nm Gate Pitch NS-Based n-FET Devices for the 2nm Node. Lirias (KU Leuven). 1–4.
4.
Porret, Clément, Kiroubanand Sankaran, Erik Rosseel, et al.. (2024). Crystallinity and composition of Sc1−x(−y)Si x (P y ) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications. Japanese Journal of Applied Physics. 63(2). 02SP97–02SP97. 1 indexed citations
5.
Porret, Clément, et al.. (2023). Low temperature selective growth of Ga-doped and Ga–B co-doped germanium source/drain for PMOS devices. Japanese Journal of Applied Physics. 62(SC). SC1043–SC1043.
6.
7.
Porret, Clément, Andriy Hikavyy, Erik Rosseel, et al.. (2022). B and Ga Co-Doped Si1−xGex for p-Type Source/Drain Contacts. ECS Journal of Solid State Science and Technology. 11(2). 24008–24008.
8.
Loo, Roger, Yumi Kawamura, Andriy Hikavyy, et al.. (2022). (Digital Presentation) Selective SiGe Vapor Etching Using Br2 in View of Nanosheet Device Isolation. ECS Transactions. 109(4). 135–140.
9.
Rosseel, Erik, Clément Porret, Andriy Hikavyy, et al.. (2022). Properties of Selectively Grown Si:P Layers below 500°C for Use in Stacked Nanosheet Devices. ECS Transactions. 109(4). 93–98.
10.
Wu, Zhicheng, J. Franco, Hiroaki Arimura, et al.. (2021). 3D sequential CMOS top tier devices demonstration using a low temperature Smart Cut™ Si layer transfer. 1 indexed citations
11.
Porret, Clément, Andriy Hikavyy, S. Baudot, et al.. (2019). Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration. ECS Journal of Solid State Science and Technology. 8(8). P392–P399. 17 indexed citations
12.
Hikavyy, Andriy, Clément Porret, Erik Rosseel, Alexey Milenin, & Roger Loo. (2019). Application of Cl 2 for low temperature etch and epitaxy. Semiconductor Science and Technology. 34(7). 74003–74003. 2 indexed citations
13.
Porret, Clément, Anurag Vohra, Andriy Hikavyy, et al.. (2019). Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices. physica status solidi (a). 217(3). 4 indexed citations
14.
Yu, Hao, Marc Schaekers, Geoffrey Pourtois, et al.. (2016). Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching $1 \times 10^{-9}$ Ohm-cm2. IEEE Transactions on Electron Devices. 63(12). 4632–4641. 47 indexed citations
15.
Yu, Hao, Marc Schaekers, S. Demuynck, et al.. (2016). Process options to enable (sub-)1e-9 Ohm.cm2 contact resistivity on Si devices. 66–68. 7 indexed citations
16.
Selvaraja, Shankar Kumar, Erik Rosseel, Luis J. Fernández, et al.. (2011). SOI thickness uniformity improvement using wafer-scale corrective etching for silicon nano-photonic device. Ghent University Academic Bibliography (Ghent University). 289–292. 4 indexed citations
17.
Ortolland, C., T. Chiarella, Stefan Kubicek, et al.. (2008). Laser-annealed junctions with advanced CMOS gate stacks for 32nm node: perspectives on device performance and manufacturability. 186–187. 4 indexed citations
18.
Ortolland, C., L.-Å. Ragnarsson, Paola Favia, et al.. (2006). Optimized ultra-low thermal budget process flow for advanced High-K / Metal gate first CMOS using laser-annealing technology. Symposium on VLSI Technology. 38–39. 1 indexed citations
19.
Puig, Teresa, Erik Rosseel, M. Baert, et al.. (1996). Vortex interactions in 2x2 antidot clusters. Springer Link (Chiba Institute of Technology). 6. 295–300. 9 indexed citations
20.
Rosseel, Erik. (1989). The impact of attitudes toward the personal future on study motivation and work orientations of nonworking adolescents.. PubMed. 24(93). 73–93. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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