N. Jossart

1.3k citations

24 papers · 344 indexed · h-index 11

Impact in

Electrical and Electronic Engineering
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
Atomic and Molecular Physics, and Optics
- Magnetic properties of thin films

Papers in

Electrical and Electronic Engineering 23
- Semiconductor materials and devices 17
- Ferroelectric and Negative Capacitance Devices 16
- Advanced Memory and Neural Computing 13
Atomic and Molecular Physics, and Optics 10
- Magnetic properties of thin films 8
- Semiconductor materials and interfaces 2

Co-authors: Gouri Sankar Kar M. Jurczak L. Goux J. A. Kittl B. Govoreanu L. Altimime Dirk J. Wouters Siddharth Rao
Journals: Microelectronic Engineering (1 paper)Electronics (1 paper)Electrochemical and Solid-State Letters (1 paper)Thin Solid Films (1 paper)DIAL (Catholic University of Leuven) (1 paper)
Partner nations: Belgium Netherlands Japan

In The Last Decade

N. Jossart

22 papers receiving 329 citations

Peers

Countries citing papers authored by N. Jossart

Since Specialization

Citations

This map shows the geographic impact of N. Jossart's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Jossart with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Jossart more than expected).

Fields of papers citing papers by N. Jossart

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Jossart. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Jossart. The network helps show where N. Jossart may publish in the future.

Co-authors

The 25 scholars most cited alongside N. Jossart, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with N. Jossart Line = papers co-authored together N. Jossart links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High Density, High Speed STT-MRAM N7 Macros: Material and DTCO Exploration А. Р. Ляпин, Hiroyuki NARAHARA, Fahd Al-Amri, R. Carpenter, Kenji Tsukahara, Jyotirmoy Chatterjee, Yoko Moriyama, Bhanuchandar Edapha, N. Jossart, Kurt Wostyn, M. Garcia Bardon, Geert Hellings, Gouri Sankar Kar, Siddharth Rao	2025	0
2	Impact of SOT & STT stress on MTJ degradation in SOT-MRAM S. Van Beek, Y. Ivanov, Kaiming Cai, N. Jossart, Siddharth Rao, Sébastien Couet	2023	2
3	MTJ degradation in multi-pillar SOT-MRAM with selective writing S. Van Beek, Kaiming Cai, D. Laborde, G. Hussein Rassool, А. В. Шлапак, N. Jossart, Siddharth Rao, Adrian Chasin, Sébastien Couet	2023	4
4	MTJ degradation in SOT-MRAM by self-heating-induced diffusion S. Van Beek, Kaiming Cai, Siddharth Rao, Владимир Евгеньевич Федорчук, Sébastien Couet, N. Jossart, YoonJae Lee, Gouri Sankar Kar	2022	10
5	STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application Siddharth Rao, W. Kim, S. Van Beek, Shreya Kundu, Manu Perumkunnil, Stefan Cosemans, Faisal Mohd-Yasin, Sébastien Couet, R. Carpenter, Barry O’Sullivan, Joana Caparica, N. Jossart, Laurent Souriau, L. Goux, D. Crotti, Gouri Sankar Kar	2021	20
6	A Systematic Assessment of W-Doped CoFeB Single Free Layers for Low Power STT-MRAM Applications Electronics ·Siddharth Rao, Sébastien Couet, S. Van Beek, Shreya Kundu, Joana Caparica, N. Jossart, Gouri Sankar Kar	2021	6
7	Sub-µm a-IGZO, Fully integrated, Process improved, Vertical diode for Crosspoint arrays Joana Caparica, Adrian Chasin, A. Fantini, Harold Dekkers, Ming Mao, Manoj Nag, S. Mertens, Siddharth Rao, N. Jossart, D. Crotti, Gouri Sankar Kar	2020	4
8	First Demonstration of $\text{In}_{1-\mathrm{x}}\text{Ga}_{\mathrm{x}}\text{As}$ Macaroni Channel for Future 3-D NAND Juhi Bhayani, Queila Silva Oliveira, Erik Rosseel, A. Arreghini, Bernardette Kunert, Z. Kh. Kunasheva, N. Stembridge, Patrick Ong, Lieve Teugels, Murat Pak, N. Jossart, S. Tollefsen, Бижан Даулетбаев, G. Van den bosch, A. Furnémont	2019	1
9	First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices Romain Delhougne, A. Arreghini, Erik Rosseel, Andriy Hikavyy, E. Vecchio, N. Stembridge, Murat Pak, Laura Nyns, S. Tollefsen, N. Jossart, L. Breuil, Theodore Robert Cackowski, Hnatov Andrii, G. Van den bosch, A. Furnémont	2018	12
10	Solving the BEOL compatibility challenge of top-pinned magnetic tunnel junction stacks Johan Swerts, Enlong Liu, Sébastien Couet, S. Mertens, Siddharth Rao, W. Kim, Kévin Garello, Laurent Souriau, Shreya Kundu, D. Crotti, Faisal Mohd-Yasin, N. Jossart, Antoine Ginésy, T. Devolder, S. Van Beek, Barry O’Sullivan, Sven Van Elshocht, A. Furnémont, Gouri Sankar Kar	2017	20
11	A novel CBRAM integration using subtractive dry-etching process of Cu enabling high-performance memory scaling down to 10nm node A. Redolfi, L. Goux, N. Jossart, T. N. Sivadas, Eiichi Nishimura, Eszter Bencze, Louis J. Hennessey, T. Witters, Taylore King, M. Jurczak	2015	10
12	Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode Microelectronic Engineering ·Ana Flavia Áraujo dos Anjos, L. Goux, L. Pantisano, Johan Swerts, Christoph Adelmann, S. Mertens, Valeri Afanasiev, Ferdila, B. Govoreanu, R. Degraeve, Stefan Kubicek, Vasile Paraschiv, Mayu Abi, N. Jossart, L. Altimime, M. Jurczak, J. A. Kittl, G. Groeseneken, Dirk J. Wouters	2013	8
13	Ultralow sub-500nA operating current high-performance TiN\Al<inf>2</inf>O<inf>3</inf>\HfO<inf>2</inf>\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering L. Goux, A. Fantini, Gouri Sankar Kar, I. M. Johnston, N. Jossart, R. Degraeve, Sergiu Clima, B. Govoreanu, 亙丸山, Geoffrey Pourtois, Dirk J. Wouters, J. A. Kittl, L. Altimime, M. Jurczak	2012	51
14	Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems Thin Solid Films ·L. Goux, Karl Opsomer, Alexis Franquet, Gouri Sankar Kar, N. Jossart, Olivier Richard, D. J. Wouters, Robert Müller, Christophe Detavernier, M. Jurczak, J. A. Kittl	2012	22
15	Process-improved RRAM cell performance and reliability and paving the way for manufacturability and scalability for high density memory application Gouri Sankar Kar, A. Fantini, YY Chen, Vasile Paraschiv, B. Govoreanu, Hubert Hody, N. Jossart, Hilde Tielens, S. Brus, Olivier Richard, T. Vandeweyer, Dirk J. Wouters, L. Altimime, M. Jurczak	2012	12
16	Field-driven ultrafast sub-ns programming in W\Al<inf>2</inf>O<inf>3</inf>\Ti\CuTe-based 1T1R CBRAM system DIAL (Catholic University of Leuven) ·L. Goux, Kiroubanand Sankaran, Gouri Sankar Kar, N. Jossart, Karl Opsomer, R. Degraeve, Geoffrey Pourtois, Gian‐Marco Rignanese, Christophe Detavernier, Sergiu Clima, I. M. Johnston, A. Fantini, B. Govoreanu, Dirk J. Wouters, M. Jurczak, L. Altimime, J. A. Kittl	2012	40
17	Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems Electrochemical and Solid-State Letters ·L. Goux, Gérard Lafitte, Faye F. Gao, L. Pantisano, N. Jossart, B. Govoreanu, J. A. Kittl, M. Jurczak, L. Altimime, Dirk J. Wouters	2011	41
18	Fully CMOS BEOL compatible HfO<inf>2</inf> RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode Ana Flavia Áraujo dos Anjos, L. Goux, L. Pantisano, Sara Lahlali, Christoph Adelmann, S. Mertens, Valeri Afanasiev, Ferdila, B. Govoreanu, R. Degraeve, Stefan Kubicek, Vasile Paraschiv, Mayu Abi, N. Jossart, L. Altimime, M. Jurczak, J. A. Kittl, G. Groeseneken, Dirk J. Wouters	2011	9
19	C₂H₄-Based Plasma-Assisted CD Shrink and Contact Patterning for RRAM Application MRS Proceedings ·Alexey Milenin, J. G. Lisoni, N. Jossart, M. Jurczak, Herbert Struyf, Denis Shamiryan, 葉子塚元, Werner Boullart	2010	1
20	Stress and Mechanical Constants Characterizations of Phase-change SbTe-alloys: Influence of the Film Thickness and Substrate MRS Proceedings ·J. G. Lisoni, Mrs. Hema Kumbhar, L. Goux, Romain Delhougne, N. Jossart, K. Attenborough, D. J. Wouters	2007	1

About N. Jossart

N. Jossart is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Computer Networks and Communications, Materials Chemistry and Condensed Matter Physics, having authored 24 papers that have together received 344 indexed citations. Recurring topics across this work include Semiconductor materials and devices (17 papers), Ferroelectric and Negative Capacitance Devices (16 papers), Advanced Memory and Neural Computing (13 papers), Magnetic properties of thin films (8 papers), Semiconductor materials and interfaces (2 papers), Phase-change materials and chalcogenides (2 papers), Metal and Thin Film Mechanics (2 papers) and Advanced Data Storage Technologies (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (310 citations), Atomic and Molecular Physics, and Optics (95 citations), Cellular and Molecular Neuroscience (50 citations), Polymers and Plastics (34 citations) and Electronic, Optical and Magnetic Materials (30 citations). N. Jossart has collaborated with scholars based in Belgium, Netherlands and Japan. Frequent co-authors include Gouri Sankar Kar, M. Jurczak, L. Goux, J. A. Kittl, B. Govoreanu, L. Altimime, Dirk J. Wouters, Siddharth Rao, Sébastien Couet and A. Fantini. Their work appears in journals such as Microelectronic Engineering, Electronics, Electrochemical and Solid-State Letters, Thin Solid Films and DIAL (Catholic University of Leuven).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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