M. Demand

1.4k total citations
51 papers, 972 citations indexed

About

M. Demand is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, M. Demand has authored 51 papers receiving a total of 972 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 14 papers in Biomedical Engineering. Recurrent topics in M. Demand's work include Semiconductor materials and devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). M. Demand is often cited by papers focused on Semiconductor materials and devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (21 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). M. Demand collaborates with scholars based in Belgium, France and Japan. M. Demand's co-authors include A. Encinas, Luc Piraux, Isabelle Huynen, U. Ebels, K. Devriendt, R. Rooyackers, Andriy Hikavyy, Roger Loo, A. Vandooren and Cedric Huyghebaert and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. Demand

49 papers receiving 941 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Demand Belgium 16 550 406 347 221 206 51 972
V. I. Vdovin Russia 14 664 1.2× 345 0.8× 656 1.9× 138 0.6× 145 0.7× 115 938
C. Pettiford United States 11 192 0.3× 174 0.4× 249 0.7× 289 1.3× 102 0.5× 26 494
Shunji Watanabe Japan 13 257 0.5× 238 0.6× 289 0.8× 100 0.5× 198 1.0× 29 562
E. Schloemann United States 11 587 1.1× 317 0.8× 366 1.1× 490 2.2× 113 0.5× 30 992
T.G.S.M. Rijks Netherlands 15 407 0.7× 615 1.5× 175 0.5× 369 1.7× 163 0.8× 26 838
Kanglin Xiong United States 15 359 0.7× 191 0.5× 254 0.7× 170 0.8× 234 1.1× 42 652
Logeeswaran VJ United States 9 349 0.6× 154 0.4× 171 0.5× 198 0.9× 377 1.8× 17 619
F. Pezzimenti Italy 24 1.0k 1.9× 428 1.1× 372 1.1× 96 0.4× 231 1.1× 75 1.3k
Richard Lebourgeois France 15 548 1.0× 418 1.0× 556 1.6× 645 2.9× 75 0.4× 39 1.1k
Yimen Zhang China 17 1.3k 2.3× 410 1.0× 476 1.4× 379 1.7× 114 0.6× 258 1.6k

Countries citing papers authored by M. Demand

Since Specialization
Citations

This map shows the geographic impact of M. Demand's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Demand with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Demand more than expected).

Fields of papers citing papers by M. Demand

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Demand. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Demand. The network helps show where M. Demand may publish in the future.

Co-authorship network of co-authors of M. Demand

This figure shows the co-authorship network connecting the top 25 collaborators of M. Demand. A scholar is included among the top collaborators of M. Demand based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Demand. M. Demand is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
3.
Enomoto, Masashi, et al.. (2017). Technology for defectivity improvement in resist coating and developing process in EUV lithography process. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 10143. 1014326–1014326. 2 indexed citations
4.
Rooyackers, R., A. Vandooren, Anne S. Verhulst, et al.. (2014). Ge-Source Vertical Tunnel FETs Using a Novel Replacement-Source Integration Scheme. IEEE Transactions on Electron Devices. 61(12). 4032–4039. 35 indexed citations
5.
Rooyackers, R., A. Vandooren, Anne S. Verhulst, et al.. (2013). A new complementary hetero-junction vertical Tunnel-FET integration scheme. 4.2.1–4.2.4. 48 indexed citations
6.
Mannaert, G., Rita Vos, D. Tsvetanova, et al.. (2011). Optimization of Resist Ash Processes on Si0.45Ge0.55 Substrates for Post Extension-Halo Ion Implantation. ECS Transactions. 41(7). 283–291. 2 indexed citations
7.
Sánchez, Efrain Altamirano, Yoko Yamaguchi, Naoto Horiguchi, et al.. (2011). Dry Etch Fin Patterning of a Sub-22nm Node SRAM Cell: EUV Lithography New Dry Etch Challenges. ECS Transactions. 34(1). 377–382. 2 indexed citations
8.
Milenin, Alexey, et al.. (2011). Temperature and RF Current Sensor Wafers for Plasma Etching. Journal of The Electrochemical Society. 159(1). H5–H10. 2 indexed citations
9.
Vandooren, A., R. Rooyackers, Daniele Leonelli, et al.. (2009). A 35nm diameter vertical silicon nanowire short-gate tunnelFET. Open Repository and Bibliography (University of Liège). 1 indexed citations
10.
Veloso, A., M. Demand, Isabelle Ferain, et al.. (2008). Capping-metal gate integration technology for multiple-V<inf>T</inf> CMOS in MuGFETs. irps2008. 119–120. 2 indexed citations
11.
Vellianitis, G., Ray Duffy, G. Doornbos, et al.. (2008). Material Aspects and Challenges for SOI FinFET Integration. ECS Transactions. 13(1). 223–234. 5 indexed citations
12.
Dal, M.J.H. van, M. Demand, Denis Shamiryan, et al.. (2007). Metal Inserted Poly-Si (MIPS) and FUSI dual metal (TaN and NiSi) CMOS integration. 1–2. 1 indexed citations
13.
Vos, Joeri De, L. Haspeslagh, M. Demand, et al.. (2006). A scalable Stacked Gate NOR/NAND Flash Technology compatible with high-k and metal gates for sub 45nm generations. 24. 1–4. 9 indexed citations
14.
Collaert, Nadine, M. Demand, Isabelle Ferain, et al.. (2005). Tall triple-gate devices with TiN/HfO/sub 2/ gate stack. 108–109. 38 indexed citations
15.
Demand, M., A. Encinas, J.-M. George, Jean‐Luc Maurice, & Luc Piraux. (2003). Structural transition of electrodeposited Co nanowires as a function of the electrolytic bath acidity. Digital Access to Libraries (Université catholique de Louvain (UCL), l'Université de Namur (UNamur) and the Université Saint-Louis (USL-B)). 35. GB3–GB3. 1 indexed citations
16.
Demand, M., M. Hehn, R. L. Stamps, C. Mény, & K. Ounadjela. (2002). Structure and magnetic properties of epitaxial cobalt islands. The European Physical Journal B. 25(2). 167–176. 1 indexed citations
17.
Encinas, A., M. Demand, L. Vila, Luc Piraux, & Isabelle Huynen. (2002). Tunable remanent state resonance frequency in arrays of magnetic nanowires. Applied Physics Letters. 81(11). 2032–2034. 51 indexed citations
18.
Demand, M., S. Padovani, M. Hehn, K. Ounadjela, & J. P. Bucher. (2002). Magnetic field-induced instabilities and irreversible evolution in modulated ferromagnetic phases of cobalt films. Journal of Magnetism and Magnetic Materials. 247(2). 147–152. 16 indexed citations
19.
Encinas, A., M. Demand, Luc Piraux, Isabelle Huynen, & U. Ebels. (2001). Dipolar interactions in arrays of nickel nanowires studied by ferromagnetic resonance. Physical review. B, Condensed matter. 63(10). 277 indexed citations
20.
Kim, Joo-Von, M. Demand, M. Hehn, K. Ounadjela, & R. L. Stamps. (2000). Roughness-induced instability in stripe domain patterns. Physical review. B, Condensed matter. 62(10). 6467–6474. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by V. I. Vdovin Breakdown of academic impact, for papers by C. Pettiford Breakdown of academic impact, for papers by Shunji Watanabe Breakdown of academic impact, for papers by E. Schloemann Breakdown of academic impact, for papers by T.G.S.M. Rijks Breakdown of academic impact, for papers by Kanglin Xiong Breakdown of academic impact, for papers by Logeeswaran VJ Breakdown of academic impact, for papers by F. Pezzimenti Breakdown of academic impact, for papers by Richard Lebourgeois Breakdown of academic impact, for papers by Yimen Zhang
Rankless by CCL
2026