L. Altimime

2.2k citations

48 papers · 1.3k indexed · h-index 19

Impact in

Electrical and Electronic Engineering top 5%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
Polymers and Plastics top 10%
- Transition Metal Oxide Nanomaterials

Papers in

Electrical and Electronic Engineering 48
- Semiconductor materials and devices 39
- Ferroelectric and Negative Capacitance Devices 31
- Advanced Memory and Neural Computing 28
- Advancements in Semiconductor Devices and Circuit Design 13
- Integrated Circuits and Semiconductor Failure Analysis 5
Materials Chemistry 14
- Electronic and Structural Properties of Oxides 6
- Ferroelectric and Piezoelectric Materials 5

Co-authors: M. Jurczak L. Goux R. Degraeve B. Govoreanu J. A. Kittl Dirk J. Wouters Gouri Sankar Kar A. Fantini
Journals: Applied Physics Letters (4 papers)Microelectronic Engineering (2 papers)IEEE Electron Device Letters (1 paper)IEEE Journal of Solid-State Circuits (1 paper)IEEE Transactions on Electron Devices (1 paper)
Partner nations: Belgium United States Germany

In The Last Decade

L. Altimime

47 papers receiving 1.3k citations

Peers

Countries citing papers authored by L. Altimime

Since Specialization

Citations

This map shows the geographic impact of L. Altimime's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Altimime with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Altimime more than expected).

Fields of papers citing papers by L. Altimime

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Altimime. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Altimime. The network helps show where L. Altimime may publish in the future.

Co-authorship network

The 25 scholars most cited alongside L. Altimime, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. Altimime Line = papers co-authored together L. Altimime links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode Microelectronic Engineering ·Ana Flavia Áraujo dos Anjos, L. Goux, L. Pantisano, Johan Swerts, Christoph Adelmann, S. Mertens, Valeri Afanasiev, Ferdila, B. Govoreanu, R. Degraeve, Stefan Kubicek, Vasile Paraschiv, Mayu Abi, N. Jossart, L. Altimime, M. Jurczak, J. A. Kittl, G. Groeseneken, Dirk J. Wouters	2013	8
2	Dynamic ‘hour glass’ model for SET and RESET in HfO<inf>2</inf> RRAM R. Degraeve, A. Fantini, Sergiu Clima, B. Govoreanu, L. Goux, Ana Flavia Áraujo dos Anjos, Dirk J. Wouters, Ph. Roussel, Gouri Sankar Kar, Geoffrey Pourtois, Stefan Cosemans, J. A. Kittl, G. Groeseneken, M. Jurczak, L. Altimime	2012	69
3	Highly Scaled Poly-Silicon Channel Vertical SONOS Cell for Ultra High Density NAND Technology ECS Transactions ·Gouri Sankar Kar, G. Van den bosch, A. Arreghini, I. Debusschere, Jan Van Houdt, L. Altimime	2012	1
4	Ultralow sub-500nA operating current high-performance TiN\Al<inf>2</inf>O<inf>3</inf>\HfO<inf>2</inf>\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering L. Goux, A. Fantini, Gouri Sankar Kar, I. M. Johnston, N. Jossart, R. Degraeve, Sergiu Clima, B. Govoreanu, 亙丸山, Geoffrey Pourtois, Dirk J. Wouters, J. A. Kittl, L. Altimime, M. Jurczak	2012	51
5	Standard cell level parasitics assessment in 20nm BPL and 14nm BFF P. Schuddinck, Mustafa Badaroglu, Michele Stucchi, S. Demuynck, Andriy Hikavyy, М. І. Фатула, A. Mercha, A. Mallik, T. Chiarella, Stefan Kubicek, Frane Adžić, Nadine Collaert, Naoto Horiguchi, I. Debusschere, Aaron Thean, L. Altimime, Diederik Verkest	2012	8
6	Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells Symposium on VLSI Technology ·L. Goux, R. Degraeve, B. Govoreanu, Bintang Kusuma Nata, V. V. Afanas’ev, Johan Meersschaut, Dr Teshi Sohang, F. K. H., Stefan Kubicek, Olivier Richard, J. A. Kittl, Dirk J. Wouters, M. Jurczak, L. Altimime	2011	4
7	Deterministic and stochastic component in RESET transient of HfSiO/FUSI gate RRAM stack Symposium on VLSI Technology ·R. Degraeve, L. Goux, Ph. Roussel, Dirk J. Wouters, J. A. Kittl, L. Altimime, M. Jurczak, G. Groeseneken	2011	1
8	Towards 1X DRAM: Improved leakage 0.4 nm EOT STO-based MIMcap and explanation of leakage reduction mechanism showing further potential Symposium on VLSI Technology ·Małgorzata Pawlak, B. Kaczer, D Dobrott, Minsoo Kim, M. Popovici, Johan Swerts, Kazuyuki Tomida, Karl Opsomer, Marc Schaekers, C. Vrancken, B. Govoreanu, Attilio Belmonte, C. Demeurisse, I. Debusschere, L. Altimime, V. V. Afanas’ev, J. A. Kittl	2011	4
9	Impact of bottom electrode and SrxTiyOz film formation on physical and electrical properties of metal-insulator-metal capacitors Applied Physics Letters ·Małgorzata Pawlak, B. Kaczer, Amy Galloway, M. Popovici, Johan Swerts, Emanuel Marcel Braga Costa, Karl Opsomer, Paola Favia, Kazuyuki Tomida, Attilio Belmonte, B. Govoreanu, C. Vrancken, C. Demeurisse, H. Bender, V. V. Afanas’ev, I. Debusschere, L. Altimime, J. A. Kittl	2011	24
10	Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells Solid-State Electronics ·Nadine Collaert, M. Aoulaiche, A. De Keersgieter, B. De Wachter, L. Altimime, M. Jurczak	2011	4
11	Self-Limited Filament Formation and Low-Power Resistive Switching in CuxTe1-x/Al2O3/Si CBRAM Cell L. Goux, Karl Opsomer, Urgen Letschnik, R. Degraeve, Ralph Müller, Christophe Detavernier, Dirk J. Wouters, M. Jurczak, L. Altimime, J. A. Kittl	2011	8
12	A comparative study of the microstructure–dielectric properties of crystalline SrTiO₃ ALD films obtained via seed layer approach physica status solidi (a) ·M. Popovici, Kazuyuki Tomida, Johan Swerts, Paola Favia, Annelies Delabie, H. Bender, Christoph Adelmann, Hilde Tielens, Bert Brijs, B. Kaczer, Małgorzata Pawlak, Minsoo Kim, L. Altimime, Sven Van Elshocht, J. A. Kittl	2011	19
13	Hot hole induced damage in 1T-FBRAM on bulk FinFET M. Aoulaiche, Nadine Collaert, A. Mercha, Michał Rakowski, B. De Wachter, G. Groeseneken, L. Altimime, M. Jurczak, Zhichao Lu	2011	4
14	Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments R. Degraeve, Ph. Roussel, L. Goux, Dirk J. Wouters, J. A. Kittl, L. Altimime, M. Jurczak, G. Groeseneken	2010	48
15	Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells Nadine Collaert, M. Aoulaiche, A. De Keersgieter, B. De Wachter, M. Jurczak, L. Altimime	2010	1
16	Realizing super-steep subthreshold slope with conventional FDSOI CMOS at low-bias voltages Zhichao Lu, Nadine Collaert, M. Aoulaiche, B. De Wachter, A. De Keersgieter, J.G. Fossum, L. Altimime, M. Jurczak	2010	30
17	Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells Applied Physics Letters ·L. Goux, P. Czarnecki, P Ambrósio, L. Pantisano, Gérard Lafitte, R. Degraeve, B. Govoreanu, M. Jurczak, D. J. Wouters, L. Altimime	2010	197
18	BJT-Mode Endurance on a 1T-RAM Bulk FinFET Device IEEE Electron Device Letters ·M. Aoulaiche, Nadine Collaert, R. Degraeve, Zhichao Lu, Bart De Wachter, G. Groeseneken, M. Jurczak, L. Altimime	2010	15
19	A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control IEEE Journal of Solid-State Circuits ·Stefan Dietrich, Elke Steudter, Olga Vorobieva, D. Gogl, H. Hoenigschmid, M. Kund, van der W. Veen, A Vinogradov Alexander, R. Symanczyk, L. Altimime, S. Bournat, Gerhard Mueller	2007	82
20	Signal-Margin-Screening for Multi-Mb MRAM HERBERT HAUCK, Christian Immanuel Garry Tampubolon, Regine Ynez H De Mesa, R. Dittrich, Fátima Aresta Godinho, D. Gogl, S. Lammers, Jérôme Schmid, L. Altimime, S. Bournat, Georg Müller	2006	7

About L. Altimime

L. Altimime is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 48 papers that have together received 1.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (39 papers), Ferroelectric and Negative Capacitance Devices (31 papers), Advanced Memory and Neural Computing (28 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Electronic and Structural Properties of Oxides (6 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Ferroelectric and Piezoelectric Materials (5 papers) and Copper Interconnects and Reliability (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.3k citations), Polymers and Plastics (191 citations), Cellular and Molecular Neuroscience (235 citations), Materials Chemistry (323 citations) and Hardware and Architecture (33 citations). L. Altimime has collaborated with scholars based in Belgium, United States and Germany. Frequent co-authors include M. Jurczak, L. Goux, R. Degraeve, B. Govoreanu, J. A. Kittl, Dirk J. Wouters, Gouri Sankar Kar, A. Fantini, L. Pantisano and G. Groeseneken. Their work appears in journals such as Applied Physics Letters, Microelectronic Engineering, IEEE Electron Device Letters, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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