K. De Meyer

7.9k total citations · 1 hit paper
336 papers, 5.9k citations indexed

About

K. De Meyer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, K. De Meyer has authored 336 papers receiving a total of 5.9k indexed citations (citations by other indexed papers that have themselves been cited), including 322 papers in Electrical and Electronic Engineering, 82 papers in Atomic and Molecular Physics, and Optics and 40 papers in Biomedical Engineering. Recurrent topics in K. De Meyer's work include Semiconductor materials and devices (266 papers), Advancements in Semiconductor Devices and Circuit Design (216 papers) and Integrated Circuits and Semiconductor Failure Analysis (78 papers). K. De Meyer is often cited by papers focused on Semiconductor materials and devices (266 papers), Advancements in Semiconductor Devices and Circuit Design (216 papers) and Integrated Circuits and Semiconductor Failure Analysis (78 papers). K. De Meyer collaborates with scholars based in Belgium, United States and Netherlands. K. De Meyer's co-authors include Michele Stucchi, Wim Dehaene, Guruprasad Katti, Nadine Collaert, Anne S. Verhulst, Kuo-Hsing Kao, William G. Vandenberghe, Geert Eneman, Bart Sorée and G. Groeseneken and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

K. De Meyer

327 papers receiving 5.7k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Electrical Modeling and Characterization of Through Silicon via for Three-Dimensional ICs

2009 477 citations K. De Meyer et al. IEEE Transactions on Electron Devices profile →

Peers

Countries citing papers authored by K. De Meyer

Since Specialization

Citations

This map shows the geographic impact of K. De Meyer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. De Meyer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. De Meyer more than expected).

Fields of papers citing papers by K. De Meyer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. De Meyer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. De Meyer. The network helps show where K. De Meyer may publish in the future.

Co-authorship network of co-authors of K. De Meyer

This figure shows the co-authorship network connecting the top 25 collaborators of K. De Meyer. A scholar is included among the top collaborators of K. De Meyer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. De Meyer. K. De Meyer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Sub-10⁻⁹ Ω·cm² contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation 2017 ·(unknown), Marc Schaekers, Hao Yu, (unknown), Andriy Hikavyy, L. Daté, (unknown), (unknown), (unknown), (unknown), A. J. Mayur, (unknown), H. van Meer, Yu-Long Jiang, K. De Meyer, D. Mocuta, Naoto Horiguchi	27
2	Record mobility (μ<inf>eff</inf> ∼3100 cm²/V-s) and reliability performance (V<inf>ov</inf>∼0.5V for 10yr operation) of In<inf>0.53</inf>Ga<inf>0.47</inf>As MOS devices using improved surface preparation and a novel interfacial layer 2016 ·Abhitosh Vais, A. Alian, Laura Nyns, J. Franco, Sonja Sioncke, V. Putcha, Hao Yu, Y. Mols, R. Rooyackers, Dennis Lin, Jan Willem Maes, Qi Xie, Michael Givens, (unknown), Xiaoqiang Jiang, A. Mocuta, Nadine Collaert, K. De Meyer, Aaron Thean	7
3	Top-down InGaAs nanowire and fin vertical FETs with record performance 2016 ·(unknown), Ts. Ivanov, (unknown), Nan Sun, J. Franco, A. Sibaja-Hernandez, R. Rooyackers, A. Alian, Roger Loo, A. Veloso, Alexey Milenin, Dennis Lin, Paola Favia, H. Bender, Nadine Collaert, A. V-Y. Thean, K. De Meyer	7
4	Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching $1 \times 10^{-9}$ Ohm-cm2 2016 ·IEEE Transactions on Electron Devices ·Hao Yu, Marc Schaekers, (unknown), Geoffrey Pourtois, Erik Rosseel, Joon-Gon Lee, Woo-Bin Song, (unknown), (unknown), Soon Aik Chew, S. Demuynck, Dae-Yong Kim, Kathy Barla, A. Mocuta, Naoto Horiguchi, Aaron Thean, Nadine Collaert, K. De Meyer	47
5	Process options to enable (sub-)1e-9 Ohm.cm2 contact resistivity on Si devices 2016 ·Hao Yu, Marc Schaekers, S. Demuynck, Erik Rosseel, (unknown), Soon Aik Chew, (unknown), Stefan Kubicek, K. Barla, A. Mocuta, Naoto Horiguchi, Nadine Collaert, Aaron Thean, K. De Meyer	7
6	Integration and Electrical Evaluation of Epitaxially Grown Si and SiGe Channels for Vertical NAND Memory Applications 2015 ·E. Capogreco, R. Degraeve, J. G. Lisoni, (unknown), A. Arreghini, M. Toledano-Luque, Andriy Hikavyy, Toshinori Numata, K. De Meyer, G. Van den bosch, Jan Van Houdt	11
7	Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations 2012 ·Solid-State Electronics ·(unknown), Pierre Eyben, Trudo Clarysse, Geert Hellings, Andreas Schulze, Jay Mody, K. De Meyer, H. Bender, Wilfried Vandervorst	3
8	Characteristics of cross-sectional atom probe analysis on semiconductor structures 2011 ·Ultramicroscopy ·Sebastian Koelling, (unknown), Geert Hellings, M. Gilbert, (unknown), K. De Meyer, Wilfried Vandervorst	18
9	Investigation on the temperature dependence of the dielectric constant of high-k materials for non-volatile memory applications 2010 ·A. Arreghini, (unknown), G. Van den bosch, L. Breuil, K. De Meyer, M. Jurczak, Jan Van Houdt	1
10	Scalability of quantum well devices for digital logic applications 2009 ·Geert Hellings, Geert Eneman, Brice De Jaeger, Jérôme Mitard, Niamh Waldron, K. De Meyer, Marc Meuris, Marc Heyns	2
11	The Impact of Ultra Thin ALD TiN Metal Gate on Low Frequency Noise of CMOS Transistors 2007 ·AIP conference proceedings ·A. Mercha, (unknown), V. Subramanian, Eddy Simoen, Willy Sansen, G. Groeseneken, K. De Meyer, Stefaan Decoutere	3
12	A method to calculate tunneling leakage currents in silicon inversion layers 2006 ·Journal of Applied Physics ·(unknown), Bart Sorée, Wim Magnus, K. De Meyer	2
13	Integration of ultra shallow junctions in PVD TaN nMOS transistors with Flash Lamp Annealing 2005 ·S. Severi, K. De Meyer, (unknown), Ray Duffy, C. Kerner, S. McCoy, (unknown), (unknown), L.-Å. Ragnarsson, P. Absil, M. Jurczak, S. Biesemans	2
14	Degradation of deep submicron partially depleted soi CMOS transistors under MeV proton or gamma irradiation 2003 ·Eddy Simoen, Johannes Raff, A. Mercha, K. De Meyer, Cor Claeys, M. Kokkoris, E. Kossionides, (unknown), Ali Mohammadzadeh	1
15	High performance raised Gate/Source/Drain transistors for sub-0.15 um CMOS technologies 1999 ·European Solid-State Device Research Conference ·H. van Meer, Stefan Kubicek, (unknown), Matty Caymax, Roger Loo, K. De Meyer	2
16	A Novel Deep Submicron Elevated Source/Drain MOSFET 1998 ·ePrints Soton (University of Southampton) ·A.M. Waite, Stefan Kubicek, David Howard, Matty Caymax, K. De Meyer, (unknown)	2
17	Explanation of the "long distance" Vt roll-off in deep submicron nMOS transistors with Indium channel 1998 ·European Solid-State Device Research Conference ·Stefan Kubicek, (unknown), K. De Meyer	1
18	Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2-300 K 1998 ·(unknown), Eddy Simoen, S. Biesemans, K. De Meyer, Cor Claeys	1
19	One junction approach to make deep submicron PMOSFETs for low power applications 1996 ·European Solid-State Device Research Conference ·Stefan Kubicek, S. Biesemans, K. De Meyer	2
20	Implantation and Diffusion Modelling of Boron in Silicon 1987 ·European Solid-State Device Research Conference ·A. De Keersgieter, (unknown), K. De Meyer	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact