K. De Meyer

7.9k total citations · 1 hit paper
336 papers, 5.9k citations indexed

About

K. De Meyer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, K. De Meyer has authored 336 papers receiving a total of 5.9k indexed citations (citations by other indexed papers that have themselves been cited), including 322 papers in Electrical and Electronic Engineering, 82 papers in Atomic and Molecular Physics, and Optics and 40 papers in Biomedical Engineering. Recurrent topics in K. De Meyer's work include Semiconductor materials and devices (266 papers), Advancements in Semiconductor Devices and Circuit Design (216 papers) and Integrated Circuits and Semiconductor Failure Analysis (78 papers). K. De Meyer is often cited by papers focused on Semiconductor materials and devices (266 papers), Advancements in Semiconductor Devices and Circuit Design (216 papers) and Integrated Circuits and Semiconductor Failure Analysis (78 papers). K. De Meyer collaborates with scholars based in Belgium, United States and Netherlands. K. De Meyer's co-authors include Wim Dehaene, Guruprasad Katti, Michele Stucchi, Nadine Collaert, Anne S. Verhulst, Kuo-Hsing Kao, Geert Eneman, William G. Vandenberghe, Bart Sorée and G. Groeseneken and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

K. De Meyer

327 papers receiving 5.7k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Electrical Modeling and Characterization of Through Silicon via for Three-Dimensional ICs

2009 477 citations K. De Meyer et al. IEEE Transactions on Electron Devices profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
K. De Meyer	5.7k	1.1k	946	629	139	336	5.9k
M. Ieong	3.4k 0.6×	557 0.5×	642 0.7×	508 0.8×	124 0.9×	72	3.7k
Chi On Chui	3.8k 0.7×	1.1k 1.1×	915 1.0×	923 1.5×	163 1.2×	109	4.2k
Tianchun Ye	2.1k 0.4×	536 0.5×	766 0.8×	746 1.2×	197 1.4×	377	2.7k
Neil Goldsman	3.0k 0.5×	556 0.5×	266 0.3×	713 1.1×	199 1.4×	224	3.5k
P.W. Wyatt	1.6k 0.3×	356 0.3×	386 0.4×	596 0.9×	113 0.8×	93	2.0k
Scott E. Thompson	3.8k 0.7×	745 0.7×	1.2k 1.3×	813 1.3×	172 1.2×	81	4.5k
H.E. Maes	7.8k 1.4×	1.1k 1.1×	969 1.0×	1.6k 2.6×	400 2.9×	292	8.5k
Kazuya Masu	2.0k 0.3×	504 0.5×	567 0.6×	282 0.4×	125 0.9×	322	2.4k
Toshiro Hiramoto	5.0k 0.9×	1.2k 1.1×	837 0.9×	1.1k 1.8×	94 0.7×	416	5.4k
L. Di Cioccio	2.8k 0.5×	1.1k 1.0×	442 0.5×	394 0.6×	316 2.3×	165	3.1k

Countries citing papers authored by K. De Meyer

Since Specialization

Citations

This map shows the geographic impact of K. De Meyer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. De Meyer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. De Meyer more than expected).

Fields of papers citing papers by K. De Meyer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. De Meyer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. De Meyer. The network helps show where K. De Meyer may publish in the future.

Co-authorship network of co-authors of K. De Meyer

This figure shows the co-authorship network connecting the top 25 collaborators of K. De Meyer. A scholar is included among the top collaborators of K. De Meyer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. De Meyer. K. De Meyer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Schaekers, Marc, Hao Yu, Andriy Hikavyy, et al.. (2017). Sub-10⁻⁹ Ω·cm² contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation. T214–T215. 27 indexed citations

Ivanov, Ts., Nan Sun, J. Franco, et al.. (2016). Top-down InGaAs nanowire and fin vertical FETs with record performance. 1–2. 7 indexed citations

Yu, Hao, Marc Schaekers, Geoffrey Pourtois, et al.. (2016). Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching $1 \times 10^{-9}$ Ohm-cm2. IEEE Transactions on Electron Devices. 63(12). 4632–4641. 47 indexed citations

Vais, Abhitosh, A. Alian, Laura Nyns, et al.. (2016). Record mobility (μ<inf>eff</inf> ∼3100 cm²/V-s) and reliability performance (V<inf>ov</inf>∼0.5V for 10yr operation) of In<inf>0.53</inf>Ga<inf>0.47</inf>As MOS devices using improved surface preparation and a novel interfacial layer. 1–2. 7 indexed citations

Capogreco, E., R. Degraeve, J. G. Lisoni, et al.. (2015). Integration and Electrical Evaluation of Epitaxially Grown Si and SiGe Channels for Vertical NAND Memory Applications. 1–4. 11 indexed citations

Koelling, Sebastian, et al.. (2011). Characteristics of cross-sectional atom probe analysis on semiconductor structures. Ultramicroscopy. 111(6). 540–545. 18 indexed citations

Arreghini, A., G. Van den bosch, L. Breuil, et al.. (2010). Investigation on the temperature dependence of the dielectric constant of high-k materials for non-volatile memory applications. 101–104. 1 indexed citations

Hellings, Geert, Geert Eneman, Brice De Jaeger, et al.. (2009). Scalability of quantum well devices for digital logic applications. 33–34. 2 indexed citations

Magnus, Wim, et al.. (2009). Tunneling-lifetime model for metal-oxide-semiconductor structures. Physical Review B. 80(8). 2 indexed citations

10.

Mercha, A., V. Subramanian, Eddy Simoen, et al.. (2007). The Impact of Ultra Thin ALD TiN Metal Gate on Low Frequency Noise of CMOS Transistors. AIP conference proceedings. 922. 33–38. 3 indexed citations

11.

Bellenger, Florence, Michel Houssa, Annelies Delabie, et al.. (2007). Electrical Passivation of the (100)Ge Surface by Its Thermal Oxide. ECS Transactions. 11(4). 451–459. 5 indexed citations

12.

Lederer, Dimitri, Valeriya Kilchytska, Tamara Rudenko, et al.. (2005). FinFET analogue characterization from DC to 110GHz. Solid-State Electronics. 49(9). 1488–1496. 81 indexed citations

13.

Simoen, Eddy, Johannes Raff, A. Mercha, et al.. (2003). Degradation of deep submicron partially depleted soi CMOS transistors under MeV proton or gamma irradiation. 18–27. 1 indexed citations

14.

Loo, Roger, et al.. (2003). Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth. Applied Surface Science. 224(1-4). 292–296. 6 indexed citations

15.

Meer, H. van, et al.. (1999). High performance raised Gate/Source/Drain transistors for sub-0.15 um CMOS technologies. European Solid-State Device Research Conference. 1. 388–391. 2 indexed citations

16.

Waite, A.M., et al.. (1998). A Novel Deep Submicron Elevated Source/Drain MOSFET. ePrints Soton (University of Southampton). 2 indexed citations

17.

Kubicek, Stefan, et al.. (1998). Explanation of the "long distance" Vt roll-off in deep submicron nMOS transistors with Indium channel. European Solid-State Device Research Conference. 368–371. 1 indexed citations

18.

Simoen, Eddy, et al.. (1998). Comparison of the freeze-out effect in In and B doped n-MOSFETs in the range 4.2-300 K. 8(3). 1 indexed citations

19.

Kubicek, Stefan, S. Biesemans, & K. De Meyer. (1996). One junction approach to make deep submicron PMOSFETs for low power applications. European Solid-State Device Research Conference. 523–526. 2 indexed citations

20.

Keersgieter, A. De, et al.. (1987). Implantation and Diffusion Modelling of Boron in Silicon. European Solid-State Device Research Conference. 423–427. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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