G. Vellianitis

1.6k citations

53 papers · 1.2k indexed · h-index 22

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
Materials Chemistry top 10%
- Electronic and Structural Properties of Oxides
- ZnO doping and properties

Papers in

Electrical and Electronic Engineering 52
- Semiconductor materials and devices 50
- Advancements in Semiconductor Devices and Circuit Design 28
- Ferroelectric and Negative Capacitance Devices 14
- Integrated Circuits and Semiconductor Failure Analysis 5
Materials Chemistry 20
- Electronic and Structural Properties of Oxides 18
- Ferroelectric and Piezoelectric Materials 6

Co-authors: A. Dimoulas G. Mavrou M.J.H. van Dal A. Travlos Nikos Boukos V. Ioannou-Sougleridis M. Passlack E. K. Evangelou
Journals: Applied Physics Letters (8 papers)Journal of Applied Physics (6 papers)IEEE Transactions on Electron Devices (4 papers)Materials Science and Engineering B (4 papers)Journal of Crystal Growth (3 papers)
Partner nations: Belgium Greece Taiwan

In The Last Decade

G. Vellianitis

52 papers receiving 1.1k citations

Peers

Countries citing papers authored by G. Vellianitis

Since Specialization

Citations

This map shows the geographic impact of G. Vellianitis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Vellianitis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Vellianitis more than expected).

Fields of papers citing papers by G. Vellianitis

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Vellianitis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Vellianitis. The network helps show where G. Vellianitis may publish in the future.

Co-authors

The 25 scholars most cited alongside G. Vellianitis, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. Vellianitis Line = papers co-authored together G. Vellianitis links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Demonstration of Ferroelectric FET Memory with Oxide Semiconductor Channel to Achieve Smallest Cell Area 0.009 μm ² and High Endurance for Non-Volatile High-Bandwidth Memory Applications Chun‐Chieh Lu, Yu‐Chuan Shih, Chih‐Yu Chang, 平木章夫, Ji MH, Stephen Doh-Fia, N. Japikse, York Hsiang, 菅野智之, Yongxun Liu, Roula Alio, Riikka Lavonen, 学斎木, G. Doornbos, G. Vellianitis, Mark van Dal, Du Aobo, Hermann Cölfen	2024	3
2	Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride ACS Applied Electronic Materials ·S. R. C. McMitchell, A. Walke, Kaustuv Banerjee, S. Mertens, Kenji Tsukahara, Ming Mao, St. Zschocke, G. Vellianitis, Mark van Dal, Yu-Ming Lin, G. Van den bosch, Romain Delhougne, Gouri Sankar Kar	2023	16
3	Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration Scientific Reports ·M. Holland, Mark van Dal, B. Duriez, N. Hristea, G. Vellianitis, G. Doornbos, Aryan Afzalian, Ta-Kun Chen, 昭雄野澤, P. Ramvall, T. Vasen, Yee‐Chia Yeo, M. Passlack	2017	5
4	High-Performance InAs Gate-All-Around Nanowire MOSFETs on 300 mm Si Substrates IEEE Journal of the Electron Devices Society ·G. Doornbos, M. Holland, G. Vellianitis, M.J.H. van Dal, B. Duriez, N. Hristea, Aryan Afzalian, Ta-Kun Chen, 宜規大沼, M. Passlack, Yee‐Chia Yeo	2016	12
5	InAs nanowire GAA n-MOSFETs with 12–15 nm diameter Lund University Publications (Lund University) ·T. Vasen, P. Ramvall, Aryan Afzalian, Claes Thelander, Kimberly A. Dick, M. Holland, G. Doornbos, Д.Ж. КАЛИМАНОВА, N. Hristea, G. Vellianitis, M.J.H. van Dal, B. Duriez, 美由喜齋藤, Ravi Droopad, Lars‐Erik Wernersson, Lars Samuelson, V. V. Peller, Yee‐Chia Yeo, M. Passlack	2016	15
6	Germanium p-Channel FinFET Fabricated by Aspect Ratio Trapping IEEE Transactions on Electron Devices ·M.J.H. van Dal, G. Vellianitis, B. Duriez, G. Doornbos, 昭雄野澤, 雅洋右京, John E. Kirklin, M. Passlack, C.H. Diaz	2014	48
7	High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates Journal of Crystal Growth ·G. Vellianitis, M.J.H. van Dal, B. Duriez, T.L. Lee, M. Passlack, C. Wann, C.H. Diaz	2013	8
8	InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces Applied Physics Letters ·Qadri Gj, L. Rosenson, G. Doornbos, M. Agioria, Krishna K. Bhuwalka, R. Contreras‐Guerrero, M. Edirisooriya, Juan Salvador Rojas-Ramírez, G. Vellianitis, N. Hristea, M. Holland, C. H. Hsieh, P. Ramvall, Erik Lind, С.С. Батова, Lars‐Erik Wernersson, Ravi Droopad, M. Passlack, C.H. Diaz	2013	30
9	Improved effective mobility extraction in MOSFETs Solid-State Electronics ·S. Thomas, T. E. Whall, E. H. C. Parker, D. R. Leadley, R.J.P. Lander, G. Vellianitis, J.R. Watling	2009	7
10	First observation of FinFET specific mismatch behavior and optimization guidelines for SRAM scaling Audrey Lauer, G. Curatola, A. Nackaerts, Nadine Collaert, M.J.H. van Dal, G. Doornbos, Аноприева Ирина Леонидовна, P. Christie, G. Vellianitis, B. Duriez, Ray Duffy, Bartek Pawlak, F. C. Voogt, R. Rooyackers, Liesbeth Witters, M. Jurczak, R.J.P. Lander	2008	21
11	Reliability degradation of HfSiO gate dielectric layers: influence of nitridation Microelectronic Engineering ·G. Vellianitis, J. Pétry, Azam Sobhani, Annelies Delabie, Stefan De Gendt	2007	0
12	Charge trapping in nitrided HfSiO gate dielectric layers Applied Physics Letters ·G. Vellianitis, Z. M. Rittersma, J. Pétry	2006	6
13	X-ray absorption study of the growth ofY2O3on Si(001) Physical Review B ·Marco Malvestuto, R. Carboni, F. Boscherini, F. D’Acapito, Sabina Spiga, M. Fanciulli, A. Dimoulas, G. Vellianitis, G. Mavrou	2005	21
14	Intrinsic carrier effects in HfO2–Ge metal–insulator–semiconductor capacitors Applied Physics Letters ·A. Dimoulas, G. Vellianitis, G. Mavrou, E. K. Evangelou, A. Sotiropoulos	2005	51
15	Hf O 2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition Applied Physics Letters ·A. Dimoulas, G. Mavrou, G. Vellianitis, E. K. Evangelou, Nikos Boukos, Michel Houssa, Matty Caymax	2005	127
16	Ru and RuO2 gate electrodes for advanced CMOS technology Materials Science and Engineering B ·K. Fröhlich, K. Hušeková, D. Machajdı́k, Jacob C. Hooker, N. Pérez, M. Fanciulli, S. Ferrari, Claudia Wiemer, A. Dimoulas, G. Vellianitis, F. Roozeboom	2004	51
17	Structural characterization of epitaxial Y2O3 on Si (0 0 1) and of the Y2O3/Si interface Materials Science and Engineering B ·Sabina Spiga, Claudia Wiemer, G. Tallarida, M. Fanciulli, Marco Malvestuto, F. Boscherini, F. D’Acapito, A. Dimoulas, G. Vellianitis, G. Mavrou	2004	4
18	Metal oxide gate electrodes for advanced CMOS technology Annalen der Physik ·K. Fröhlich, K. Hušeková, Silvia Antonia, Jacob C. Hooker, M. Fanciulli, Claudia Wiemer, A. Dimoulas, G. Vellianitis, F. Roozeboom	2004	6
19	Complex admittance analysis for La2Hf2O7/SiO2 high-κ dielectric stacks Applied Physics Letters ·Γ. Αποστολόπουλος, G. Vellianitis, A. Dimoulas, Jacob C. Hooker, Thierry Conard	2004	54
20	Direct heteroepitaxy of crystalline Y2O3 on Si (001) for high-k gate dielectric applications Journal of Applied Physics ·A. Dimoulas, A. Travlos, G. Vellianitis, Nikos Boukos, Enas danial	2001	57

About G. Vellianitis

G. Vellianitis is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 53 papers that have together received 1.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers), Electronic and Structural Properties of Oxides (18 papers), Ferroelectric and Negative Capacitance Devices (14 papers), Nanowire Synthesis and Applications (7 papers), Ferroelectric and Piezoelectric Materials (6 papers), Semiconductor Quantum Structures and Devices (5 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.1k citations), Materials Chemistry (510 citations), Atomic and Molecular Physics, and Optics (253 citations), Electronic, Optical and Magnetic Materials (121 citations) and Biomedical Engineering (153 citations). G. Vellianitis has collaborated with scholars based in Belgium, Greece and Taiwan. Frequent co-authors include A. Dimoulas, G. Mavrou, M.J.H. van Dal, A. Travlos, Nikos Boukos, V. Ioannou-Sougleridis, M. Passlack, E. K. Evangelou, Γ. Αποστολόπουλος and G. Doornbos. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices, Materials Science and Engineering B and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact