A. Fantini

5.4k citations

148 papers · 3.6k indexed · h-index 32

Impact in

Electrical and Electronic Engineering top 1%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
Cellular and Molecular Neuroscience top 2%
- Neuroscience and Neural Engineering

Papers in

Electrical and Electronic Engineering 126
- Advanced Memory and Neural Computing 110
- Ferroelectric and Negative Capacitance Devices 83
- Semiconductor materials and devices 66
- Chalcogenide Semiconductor Thin Films 8
Materials Chemistry 49
- Phase-change materials and chalcogenides 29
- Electronic and Structural Properties of Oxides 12

Co-authors: M. Jurczak R. Degraeve L. Goux Gouri Sankar Kar Sergiu Clima B. Govoreanu Dirk J. Wouters G. Groeseneken
Journals: IEEE Electron Device Letters (15 papers)IEEE Transactions on Electron Devices (10 papers)Microelectronic Engineering (5 papers)Applied Physics Letters (4 papers)IEEE Transactions on Nuclear Science (4 papers)
Partner nations: Belgium Italy United Kingdom

In The Last Decade

A. Fantini

143 papers receiving 3.5k citations

Peers

Countries citing papers authored by A. Fantini

Since Specialization

Citations

This map shows the geographic impact of A. Fantini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Fantini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Fantini more than expected).

Fields of papers citing papers by A. Fantini

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Fantini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Fantini. The network helps show where A. Fantini may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Fantini, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Fantini Line = papers co-authored together A. Fantini links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory Lirias (KU Leuven) ·Taras Ravsher, R. Degraeve, Daniele Garbin, Sergiu Clima, A. Fantini, Gabriele Luca Donadio, Shreya Kundu, Wouter Devulder, Hubert Hody, Goedele Potoms, Jan Van Houdt, Valeri Afanas’ev, Attilio Belmonte, Gouri Sankar Kar	2024	6
2	Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density physica status solidi (RRL) - Rapid Research Letters ·Taras Ravsher, Daniele Garbin, A. Fantini, R. Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Goedele Potoms, Tobias Peissker, Laura Nyns, Jan Van Houdt, Valeri Afanas’ev, Attilio Belmonte, Gouri Sankar Kar	2024	9
3	Design Space Exploration of FeRAM Bit Cell for DRAM Application IEEE Transactions on Electron Devices ·Hyungrock Oh, Yang Xiang, Fernando Garćıa-Redondo, Mohit Gupta, Manu Perumkunnil, M. Garcia Bardon, Amit Dhiman, Sathisha Nanjunde Gowda, A. Walke, A. Fantini, Farrukh Yasin, Gouri Sankar Kar, Geert Hellings, Wim Dehaene	2024	5
4	La Doped HZO-Based 3D-Trench Metal-Ferroelectric-Metal Capacitors With High-Endurance (>10¹²) for FeRAM Applications IEEE Electron Device Letters ·A. Walke, M. Popovici, Shamin Houshmand Sharifi, Eyüp Can Demir, Harinarayanan Puliyalil, Jasper Bizindavyi, Farrukh Yasin, Sergiu Clima, A. Fantini, Attilio Belmonte, Gouri Sankar Kar, Jan Van Houdt	2024	19
5	Fault Attack Investigation on TaO_x Resistive-RAM for Cyber Secure Application IEEE Transactions on Electron Devices ·Ankit Kumar, R. Degraeve, Arthur Beckers, A. Fantini, Ingrid Verbauwhede, Dimitri Linten, Gouri Sankar Kar	2023	1
6	NPN SiGe Hetero Junction Transistor Latch-Up Memory Selector IEEE Electron Device Letters ·Gaspard Hiblot, Taras Ravsher, Roger Loo, Bhuvaneshwari Yengula Venkata Ramana, Yann Canvel, Nathali Franchina Vergel, A. Fantini, Shamin Houshmand Sharifi, N. Bazzazian, Mustafa Ayyad, Alex Merkulov, Gouri Sankar Kar, Sébastien Couet	2023	0
7	Polarity‐Induced Threshold Voltage Shift in Ovonic Threshold Switching Chalcogenides and the Impact of Material Composition physica status solidi (RRL) - Rapid Research Letters ·Taras Ravsher, Daniele Garbin, A. Fantini, R. Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas’ev, Romain Delhougne, Gouri Sankar Kar	2023	12
8	Composition Optimization and Device Understanding of Si-Ge-As-Te Ovonic Threshold Switch Selector with Excellent Endurance Ghent University Academic Bibliography (Ghent University) ·Daniele Garbin, Wouter Devulder, R. Degraeve, Gabriele Luca Donadio, Sergiu Clima, Karl Opsomer, A. Fantini, D. Cellier, W. G. Kim, Mahendra Pakala, Andrew Cockburn, Christophe Detavernier, Romain Delhougne, L. Goux, Gouri Sankar Kar	2019	43
9	Giant isolated intracardiac thrombus presenting as acute heart failure secondary to right ventricular outflow tract obstruction in a patient with renal carcinoma Oxford Medical Case Reports ·Piercarlo Ballo, Veronica Fibbi, Massimo Granelli, Francesca R. Fusco, Alessandro Abbondanti, A. Fantini, Mattia Bartalini, M Consalvo, Antonio Fazi, Giovanni Maria Santoro	2018	2
10	Excellent R_off/R_on ratio and short programming time in Cu/Al₂O₃‐based conductive‐bridging RAM under low‐current (10 μA) operation physica status solidi (a) ·Attilio Belmonte, A. Fantini, A. Redolfi, Michel Houssa, M. Jurczak, Ludovic Goux	2015	12
11	Engineering of a TiN\Al<inf>2</inf>O<inf>3</inf>\(Hf, Al)O<inf>2</inf>\Ta<inf>2</inf>O<inf>5</inf>\Hf RRAM cell for fast operation at low current C. Y. Chen, L. Goux, A. Fantini, R. Degraeve, A. Redolfi, G. Groeseneken, M. Jurczak	2015	1
12	Tailoring switching and endurance / retention reliability characteristics of HfO<inf>2</inf> / Hf RRAM with Ti, Al, Si dopants Y. Y. Chen, R. Roelofs, A. Redolfi, R. Degraeve, D. Crotti, A. Fantini, Sergiu Clima, B. Govoreanu, Masanori Komura, L. Goux, L. Zhang, Attilio Belmonte, Qiyuan Xie, Jan Willem Maes, Geoffrey Pourtois, M. Jurczak	2014	29
13	Engineering of Hf<inf>1−x</inf>Al<inf>x</inf>O<inf>y</inf> amorphous dielectrics for high-performance RRAM applications A. Fantini, Ludovic Goux, Sergiu Clima, R. Degraeve, A. Redolfi, Christoph Adelmann, G. Polimeni, Y. Y Chen, Masanori Komura, Attilio Belmonte, Dirk J. Wouters, M. Jurczak	2014	18
14	On the Bipolar Resistive Switching Memory Using $ \hbox{TiN/Hf/HfO}_{2}/\hbox{Si}$ MIS Structure IEEE Electron Device Letters ·Yung‐Hsien Wu, Dirk J. Wouters, Paul Hendrickx, Leqi Zhang, Yang Yin Chen, L. Goux, A. Fantini, G. Groeseneken, M. Jurczak	2013	1
15	RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfO x and AlO x RRAM Symposium on VLSI Technology ·Nagarajan Raghavan, R. Degraeve, L. Goux, A. Fantini, Dirk J. Wouters, G. Groeseneken, M. Jurczak	2013	30
16	Intrinsic switching variability in HfO2 RRAM: A theoretical and experimental study A. Fantini, Ludovic Goux, R. Degraeve, Dirk J. Wouters, Praveen Raghavan, Gouri Sankar Kar, Attilio Belmonte, Yang Yin Chen, B. Govoreanu, M. Jurczak	2013	11
17	Modeling RRAM set/reset statistics resulting in guidelines for optimized operation Symposium on VLSI Technology ·R. Degraeve, A. Fantini, Nagarajan Raghavan, Y. Y. Chen, L. Goux, Sergiu Clima, Stefan Cosemans, B. Govoreanu, Dirk J. Wouters, Ph. Roussel, Gouri Sankar Kar, G. Groeseneken, M. Jurczak	2013	17
18	Primary coronary angioplasty in acute myocardial infarction: is it possible to prevent postinfarction cardiac rupture? PubMed ·Angelo Bartoletti, A. Fantini, Francisco Meucci, R Idini, Alessandro Abbondanti, Giuseppe Mangialavori, Massimo Margheri, R Vergassola	2000	5
19	Quantitative evaluation of left ventricular shape in anterior aneurysm Catheterization and Cardiovascular Diagnosis ·F Fantini, Giuseppe Barletta, Maurizio Baroni, A. Fantini, Mauro Maioli, M. Sabatier, Philippe Rossi, Vincent Dor, Marisa Di Donato	1993	9
20	Left ventricular shape abnormalities in inferior wall myocardial infarction The American Journal of Cardiology ·F Fantini, Giuseppe Barletta, Marisa Di Donate, A. Fantini, Maurizio Baroni	1992	5

About A. Fantini

A. Fantini is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Cellular and Molecular Neuroscience and Cardiology and Cardiovascular Medicine, having authored 148 papers that have together received 3.6k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (110 papers), Ferroelectric and Negative Capacitance Devices (83 papers), Semiconductor materials and devices (66 papers), Phase-change materials and chalcogenides (29 papers), Electronic and Structural Properties of Oxides (12 papers), Transition Metal Oxide Nanomaterials (10 papers), Neuroscience and Neural Engineering (8 papers) and Chalcogenide Semiconductor Thin Films (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (3.3k citations), Cellular and Molecular Neuroscience (713 citations), Polymers and Plastics (536 citations), Hardware and Architecture (221 citations) and Materials Chemistry (1.1k citations). A. Fantini has collaborated with scholars based in Belgium, Italy and United Kingdom. Frequent co-authors include M. Jurczak, R. Degraeve, L. Goux, Gouri Sankar Kar, Sergiu Clima, B. Govoreanu, Dirk J. Wouters, G. Groeseneken, Ludovic Goux and Attilio Belmonte. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Microelectronic Engineering, Applied Physics Letters and IEEE Transactions on Nuclear Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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