A. Arreghini

1.4k total citations
93 papers, 1.2k citations indexed

About

A. Arreghini is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Materials Chemistry. According to data from OpenAlex, A. Arreghini has authored 93 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 93 papers in Electrical and Electronic Engineering, 24 papers in Computer Networks and Communications and 22 papers in Materials Chemistry. Recurrent topics in A. Arreghini's work include Semiconductor materials and devices (90 papers), Advanced Memory and Neural Computing (43 papers) and Advancements in Semiconductor Devices and Circuit Design (30 papers). A. Arreghini is often cited by papers focused on Semiconductor materials and devices (90 papers), Advanced Memory and Neural Computing (43 papers) and Advancements in Semiconductor Devices and Circuit Design (30 papers). A. Arreghini collaborates with scholars based in Belgium, Italy and United Kingdom. A. Arreghini's co-authors include G. Van den bosch, Jan Van Houdt, F. Driussi, David Esseni, M.J. van Duuren, R. Degraeve, L. Selmi, N. Akil, L. Breuil and G. Groeseneken and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

A. Arreghini

91 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Arreghini Belgium 19 1.1k 314 251 50 43 93 1.2k
Rich Liu Taiwan 17 803 0.7× 182 0.6× 257 1.0× 29 0.6× 35 0.8× 59 866
Yen-Hao Shih Taiwan 17 647 0.6× 268 0.9× 239 1.0× 40 0.8× 51 1.2× 44 792
G. Van den bosch Belgium 23 2.0k 1.8× 314 1.0× 419 1.7× 99 2.0× 96 2.2× 198 2.1k
Tahui Wang Taiwan 18 1.0k 0.9× 116 0.4× 161 0.6× 73 1.5× 87 2.0× 121 1.1k
Pei-Ying Du Taiwan 15 527 0.5× 154 0.5× 217 0.9× 40 0.8× 15 0.3× 55 591
Tahone Yang Taiwan 15 521 0.5× 186 0.6× 94 0.4× 29 0.6× 32 0.7× 89 607
K. Yahashi Japan 5 452 0.4× 181 0.6× 93 0.4× 38 0.8× 38 0.9× 7 553
M. Rosmeulen Belgium 18 1.1k 1.0× 88 0.3× 195 0.8× 51 1.0× 75 1.7× 99 1.2k
Kuang-Yeu Hsieh Taiwan 21 1.3k 1.1× 436 1.4× 324 1.3× 27 0.5× 57 1.3× 102 1.4k
M. Kido Japan 7 763 0.7× 393 1.3× 104 0.4× 20 0.4× 61 1.4× 9 900

Countries citing papers authored by A. Arreghini

Since Specialization
Citations

This map shows the geographic impact of A. Arreghini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Arreghini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Arreghini more than expected).

Fields of papers citing papers by A. Arreghini

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Arreghini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Arreghini. The network helps show where A. Arreghini may publish in the future.

Co-authorship network of co-authors of A. Arreghini

This figure shows the co-authorship network connecting the top 25 collaborators of A. Arreghini. A scholar is included among the top collaborators of A. Arreghini based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Arreghini. A. Arreghini is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Higashi, Y., João P. A. Bastos, L. Breuil, et al.. (2024). Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. 1–6. 1 indexed citations
2.
Zhang, En Xia, Robert A. Reed, Ronald D. Schrimpf, et al.. (2024). Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide. IEEE Transactions on Nuclear Science. 71(8). 1789–1797. 1 indexed citations
3.
Donadio, Gabriele Luca, Antoine Pacco, Jan Willem Maes, et al.. (2024). Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash. 1–4. 1 indexed citations
4.
Verreck, Devin, A. Arreghini, G. Van den bosch, et al.. (2024). Modeling the Operation of Charge Trap Flash Memory: A Monte Carlo Approach to Carrier Distribution and (De)trapping. Lirias (KU Leuven). 1–4.
5.
Breuil, L., M. Popovici, A. Arreghini, et al.. (2024). Gate Side Injection Operating Mode for 3D NAND Flash Memories. Lirias (KU Leuven). 1–4. 7 indexed citations
6.
Arreghini, A., A. Leśniewska, Marleen H. van der Veen, et al.. (2024). Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND. 1–5. 1 indexed citations
7.
Verreck, Devin, Zlatan Stanojević, A. Arreghini, et al.. (2023). Modeling the Operation of Charge Trap Flash Memory–Part I: The Importance of Carrier Energy Relaxation. IEEE Transactions on Electron Devices. 71(1). 547–553. 7 indexed citations
8.
Rosmeulen, M., Kherim Willems, Devin Verreck, et al.. (2022). Liquid Memory and the Future of Data Storage. Lirias (KU Leuven). 1–4. 1 indexed citations
9.
Han, Jin‐Woo, Jungsik Kim, Andrew J. Walker, et al.. (2021). Surround Gate Transistor With Epitaxially Grown Si Pillar and Simulation Study on Soft Error and Rowhammer Tolerance for DRAM. IEEE Transactions on Electron Devices. 68(2). 529–534. 16 indexed citations
10.
Breuil, L., Filip Schleicher, Farid Sebaai, et al.. (2021). First Demonstration of Ruthenium and Molybdenum Word lines Integrated into 40nm Pitch 3D-NAND Memory Devices. Symposium on VLSI Technology. 1–2. 4 indexed citations
11.
Capogreco, E., R. Degraeve, J. G. Lisoni, et al.. (2015). Integration and Electrical Evaluation of Epitaxially Grown Si and SiGe Channels for Vertical NAND Memory Applications. 1–4. 11 indexed citations
12.
Capogreco, E., J. G. Lisoni, A. Arreghini, et al.. (2015). MOVPE In1−xGaxAs high mobility channel for 3-D NAND memory. 3.1.1–3.1.4. 13 indexed citations
13.
Degraeve, R., M. Toledano-Luque, A. Arreghini, et al.. (2015). Assessment of tunnel oxide and poly-Si channel traps in 3D SONOS memory before and after P/E cycling. Microelectronic Engineering. 147. 45–50. 8 indexed citations
14.
Liu, Lifang, A. Arreghini, G. Van den bosch, Liyang Pan, & Jan Van Houdt. (2014). Assessment methodology of the lateral migration component in data retention of 3D SONOS memories. Microelectronics Reliability. 54(9-10). 1697–1701. 13 indexed citations
15.
Arreghini, A., Pieter Blomme, G. Van den bosch, et al.. (2013). A proper approach to characterize retention-after-cycling in 3D-Flash devices. 187–191. 4 indexed citations
16.
Breuil, L., G. Van den bosch, A. Cacciato, et al.. (2011). Optimization of gate stack parameters towards 3D-SONOS application. Microelectronic Engineering. 88(7). 1164–1167. 2 indexed citations
17.
Padovani, Andrea, A. Arreghini, Luca Vandelli, et al.. (2011). A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations. IEEE Transactions on Electron Devices. 58(9). 3147–3155. 33 indexed citations
18.
Arreghini, A., G. Van den bosch, L. Breuil, et al.. (2010). Investigation on the temperature dependence of the dielectric constant of high-k materials for non-volatile memory applications. 101–104. 1 indexed citations
19.
Arreghini, A., F. Driussi, Elisa Vianello, et al.. (2008). Experimental Characterization of the Vertical Position of the Trapped Charge in Si Nitride-Based Nonvolatile Memory Cells. IEEE Transactions on Electron Devices. 55(5). 1211–1219. 37 indexed citations
20.
Arreghini, A., N. Akil, F. Driussi, et al.. (2007). Characterization and modeling of long term retention in SONOS non volatile memories. Institutional Research Information System (University of Udine). 406–409. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Rich Liu Breakdown of academic impact, for papers by Yen-Hao Shih Breakdown of academic impact, for papers by G. Van den bosch Breakdown of academic impact, for papers by Tahui Wang Breakdown of academic impact, for papers by Pei-Ying Du Breakdown of academic impact, for papers by Tahone Yang Breakdown of academic impact, for papers by K. Yahashi Breakdown of academic impact, for papers by M. Rosmeulen Breakdown of academic impact, for papers by Kuang-Yeu Hsieh Breakdown of academic impact, for papers by M. Kido
Rankless by CCL
2026