C. Dachs

867 citations

29 papers · 516 indexed · h-index 11

Electrical and Electronic Engineering top 10%
- Advancements in Semiconductor Devices and Circuit Design 20
- Semiconductor materials and devices 17
- Integrated Circuits and Semiconductor Failure Analysis 10
- Radiation Effects in Electronics 9
- Silicon and Solar Cell Technologies 6
- Electrostatic Discharge in Electronics 3
- Advancements in Photolithography Techniques 2
Hardware and Architecture top 10%
Nuclear Energy and Engineering
Automotive Engineering
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 2

Co-authors: J.M. Palau J. Gasiot K.F. Galloway G.H. Johnson Ronald D. Schrimpf G. Bruguier E. Lorfèvre C. Detcheverry
Cited by: Electrical and Electronic Engineering Hardware and Architecture Nuclear Energy and Engineering
Journals: IEEE Transactions on Nuclear Science (9 papers)IEEE Transactions on Electron Devices (2 papers)Japanese Journal of Applied Physics (1 paper)
Partner nations: Belgium France Netherlands

In The Last Decade

C. Dachs

28 papers receiving 490 citations

Peers

Countries citing papers authored by C. Dachs

Since Specialization

Citations

This map shows the geographic impact of C. Dachs's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Dachs with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Dachs more than expected).

Fields of papers citing papers by C. Dachs

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Dachs. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Dachs. The network helps show where C. Dachs may publish in the future.

Co-authorship network

The 25 scholars most cited alongside C. Dachs, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. Dachs Line = papers co-authored together C. Dachs links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Diffusion-less junctions and super halo profiles for PMOS transistors formed by SPER and FUSI gate in 45 nm physical gate length devices G. Sanschagrin,K.G. Anil,高樹大久保,Ray Duffy,K. Henson,Richard Lindsay,A. Lauwers,A. Veloso,J.F. de Mameffea,J. Ramos,Gabriela Latour,Pierre Eyben,C. Dachs,К И Липчиу,M. Jurczak,S. Biesemans,A Kanagalakshmi	2005	13
2	Ultra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applications A. Veloso,F.N. Cubaynes,A. Rothschild,S. Mertens,R. Degraeve,Robert O’Connor,Chris Olsen,L. Daté,Marc Schaekers,C. Dachs,M. Jurczak	2004	1
3	Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Bartek Pawlak,Richard Lindsay,R. Surdeanu,H Röding,Kunteenun Nokkunthong,I. Hoflijk,Olivier Richard,Ray Duffy,Trudo Clarysse,Bert Brijs,Wilfried Vandervorst,C. Dachs	2004	16
4	Pre-amorphization and co-implantation suitability for advanced PMOS devices integration R. Surdeanu,Bartek Pawlak,Richard Lindsay,Mark van Dal,G. Doornbos,C. Dachs,Y.V. Ponomarev,誉之小田,K. Henson,Marcel A. Verheijen,M. Kaiser,Xavier Llimona i Pagès,M. Jurczak,P.A. Stolk	2003	1
5	A manufacturable 25 nm planar MOSFET technology Y.V. Ponomarev,誉之小田,C. Dachs,F.N. Cubaynes,Marcel A. Verheijen,M. Kaiser,J. G. M. van Berkum,Stefan Kubicek,Jeroen Bolk,長城邵	2002	2
6	A Manufacturable Sub-50nm PMOSFET Technology 誉之小田,Y.V. Ponomarev,M. Kaiser,Marcel A. Verheijen,F.N. Cubaynes,C. Dachs	2001	1
7	Pockets and offset spacer engineering for 100 nm CMOS R. Surdeanu,C. Dachs,P.A. Stolk,F.N. Cubaynes,Y.V. Ponomarev	2001	0
8	Junction leakage in advanced CMOS technologies C. Dachs,R. Surdeanu,Tâmara de Almeida,Shadia Grissel Salazar Dávila,Y.V. Ponomarev,P.A. Stolk	2001	1
9	Modeling Facet Formation for Non-Planar Thermal Oxidation of Silicon Victor Moroz,C. Dachs,L. Farah	2001	5
10	2D dopant profiling of advanced CMOS technologies by preferential etching, comparison with 2D process simulations C. Dachs,Marcel A. Verheijen,M. Kaiser,P.A. Stolk,Y.V. Ponomarev	2000	1
11	A 0.13 μm poly-SiGe gate CMOS technology for low-voltage mixed-signal applications IEEE Transactions on Electron Devices ·Y.V. Ponomarev,P.A. Stolk,C. Dachs,A.H. Montree	2000	6
12	An efficient lateral channel profiling of poly-SiGe-gated PMOSFET's for 0.1 /spl mu/m CMOS low-voltage applications University of Twente Research Information ·Y.V. Ponomarev,P.A. Stolk,Raimundo de Barros Araújo Júnior,C. Dachs,M. Kaiser,A.H. Montree,Seung Hyun Yi,Jurriaan Schmitz,P.H. Woerlee	1999	3
13	Gate Workfunction Engineering for Deep Submicron CMOS European Solid-State Device Research Conference ·C. Dachs,Y.V. Ponomarev,P.A. Stolk,A.H. Montree	1999	3
14	SEB occurrence in a VIP: Influence of the epi-substrate junction IEEE Transactions on Nuclear Science ·E. Lorfèvre,C. Sudre,C. Dachs,C. Detcheverry,J.M. Palau,J. Gasiot,M.-C. Calvet,Romain Rousselot,R. Ecoffet	1998	3
15	SEU critical charge and sensitive area in a submicron CMOS technology IEEE Transactions on Nuclear Science ·C. Detcheverry,C. Dachs,E. Lorfèvre,C. Sudre,G. Bruguier,J.M. Palau,J. Gasiot,R. Ecoffet	1997	60
16	A review of the techniques used for modeling single-event effects in power MOSFETs IEEE Transactions on Nuclear Science ·G.H. Johnson,J.M. Palau,C. Dachs,K.F. Galloway,Ronald D. Schrimpf	1996	101
17	Application of Device Simulations to Radiation Hardening Studies C. Sudre,C. Dachs,A. G. SUTULO,藤松信義,G. Bruguier,Tereza Cristina de Brito Azevedo,J.M. Palau,J. Gasiot	1995	1
18	Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout IEEE Transactions on Nuclear Science ·C. Dachs,藤松信義,J.M. Palau,G. Bruguier,J. Gasiot,Ngan Ngoc. Chau,Guan‐Nan Yang,P. Calvel	1995	37
19	Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs IEEE Transactions on Nuclear Science ·C. Dachs,藤松信義,J.M. Palau,G. Bruguier,J. Gasiot,Ngan Ngoc. Chau	1994	56
20	Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs IEEE Transactions on Nuclear Science ·藤松信義,C. Dachs,J.M. Palau,J. Gasiot,Ngan Ngoc. Chau	1993	53

About C. Dachs

C. Dachs is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Atomic and Molecular Physics, and Optics, Computational Mechanics and Materials Chemistry, having authored 29 papers that have together received 516 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (20 papers), Semiconductor materials and devices (17 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers), Radiation Effects in Electronics (9 papers), Silicon and Solar Cell Technologies (6 papers), Electrostatic Discharge in Electronics (3 papers), Advancements in Photolithography Techniques (2 papers) and Semiconductor materials and interfaces (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (510 citations), Hardware and Architecture (44 citations), Nuclear Energy and Engineering (1 citation), Automotive Engineering (15 citations) and Condensed Matter Physics (12 citations). C. Dachs has collaborated with scholars based in Belgium, France and Netherlands. Frequent co-authors include J.M. Palau, J. Gasiot, K.F. Galloway, G.H. Johnson, Ronald D. Schrimpf, G. Bruguier, E. Lorfèvre, C. Detcheverry, J.L. Titus and C.F. Wheatley. Their work appears in journals such as IEEE Transactions on Nuclear Science, IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics, European Solid-State Device Research Conference and MRS Proceedings.

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