E. Sánchez

403 total citations
16 papers, 307 citations indexed

About

E. Sánchez is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, E. Sánchez has authored 16 papers receiving a total of 307 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 6 papers in Biomedical Engineering. Recurrent topics in E. Sánchez's work include Semiconductor materials and devices (8 papers), Semiconductor Quantum Structures and Devices (7 papers) and Silicon and Solar Cell Technologies (6 papers). E. Sánchez is often cited by papers focused on Semiconductor materials and devices (8 papers), Semiconductor Quantum Structures and Devices (7 papers) and Silicon and Solar Cell Technologies (6 papers). E. Sánchez collaborates with scholars based in United States, France and Germany. E. Sánchez's co-authors include Xinyu Bao, T. Baron, Y. Bogumilowicz, M. Martin, F. Bassani, Sylvain David, J. Moeyaert, Reynald Alcotte, F. Ducroquet and N. Rochat and has published in prestigious journals such as Applied Physics Letters, Journal of Materials Science and Computer Physics Communications.

In The Last Decade

E. Sánchez

15 papers receiving 297 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. Sánchez United States	8	278	223	97	41	15	16	307
Reynald Alcotte France	10	302 1.1×	241 1.1×	100 1.0×	109 2.7×	17 1.1×	23	386
Mateus Corato‐Zanarella United States	6	284 1.0×	258 1.2×	48 0.5×	21 0.5×	27 1.8×	10	345
Bratati Mukhopadhyay India	14	489 1.8×	259 1.2×	149 1.5×	45 1.1×	38 2.5×	52	508
Siyi Sun United States	12	418 1.5×	312 1.4×	43 0.4×	17 0.4×	10 0.7×	39	472
Vladyslav Vakarin Italy	8	327 1.2×	244 1.1×	58 0.6×	54 1.3×	14 0.9×	9	351
Mengya Liao United Kingdom	12	451 1.6×	408 1.8×	42 0.4×	43 1.0×	25 1.7×	24	499
P. Howe United Kingdom	10	267 1.0×	315 1.4×	35 0.4×	140 3.4×	13 0.9×	12	328
Takeshi Mizuno Japan	11	406 1.5×	326 1.5×	176 1.8×	57 1.4×	6 0.4×	38	463
M. Grave Germany	5	123 0.4×	178 0.8×	59 0.6×	84 2.0×	29 1.9×	5	203

Countries citing papers authored by E. Sánchez

Since Specialization

Citations

This map shows the geographic impact of E. Sánchez's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Sánchez with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Sánchez more than expected).

Fields of papers citing papers by E. Sánchez

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Sánchez. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Sánchez. The network helps show where E. Sánchez may publish in the future.

Co-authorship network of co-authors of E. Sánchez

This figure shows the co-authorship network connecting the top 25 collaborators of E. Sánchez. A scholar is included among the top collaborators of E. Sánchez based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Sánchez. E. Sánchez is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

Ross, M. P., J. van Dongen, C. M. Mow‐Lowry, et al.. (2023). A vacuum-compatible cylindrical inertial rotation sensor with picoradian sensitivity. Review of Scientific Instruments. 94(9). 3 indexed citations

Sharma, Shashank, et al.. (2019). Dopant-defect interactions in highly doped epitaxial Si:P thin films. Thin Solid Films. 685. 1–7. 6 indexed citations

Martin, M., Damien Caliste, Reynald Alcotte, et al.. (2016). Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001). Applied Physics Letters. 109(25). 39 indexed citations

Bogumilowicz, Y., J. M. Hartmann, N. Rochat, et al.. (2016). Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates. Journal of Crystal Growth. 453. 180–187. 24 indexed citations

Martin, Thomas P., Xinyu Bao, Luis H. Gutiérrez, et al.. (2016). Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001). Journal of Crystal Growth. 450. 39–44. 12 indexed citations

Alcotte, Reynald, M. Martin, J. Moeyaert, et al.. (2016). Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility. APL Materials. 4(4). 100 indexed citations

Bogumilowicz, Y., Jean‐Michel Hartmann, Reynald Alcotte, et al.. (2015). Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates. Applied Physics Letters. 107(21). 23 indexed citations

Bao, Xinyu, et al.. (2015). Quantitative correlation of interfacial contamination and antiphase domain boundary density in GaAs on Si(100). Journal of Materials Science. 51(1). 449–456. 7 indexed citations

Baron, T., M. Martin, J. Moeyaert, et al.. (2014). Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices. Applied Physics Letters. 104(26). 39 indexed citations

10.

Guo, Weiming, L. Daté, V. Peña, et al.. (2014). Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001). Applied Physics Letters. 105(6). 39 indexed citations

11.

Sánchez, E., et al.. (2011). Evaluation of Performance of Standard and Umg Multicrystalline Silicon Modules in Outdoor Conditions. EU PVSEC. 3657–3660. 1 indexed citations

12.

Sturm, James C., et al.. (2007). Chemical Vapor Deposition Epitaxy of Silicon and Silicon-Carbon Alloys at High Rates and Low Temperatures using Neopentasilane. ECS Transactions. 6(1). 429–436. 5 indexed citations

13.

Sturm, James C., et al.. (2007). Chemical Vapor Deposition Epitaxy of Silicon and Silicon-Carbon Alloys at High Rates and Low Temperatures using Neopentasilane. ECS Meeting Abstracts. MA2007-01(12). 606–606. 1 indexed citations

14.

Sturm, James C., et al.. (2006). The high growth rate of epitaxial silicon–carbon alloys by using chemical vapour deposition and neopentasilane. Semiconductor Science and Technology. 22(1). S158–S160. 7 indexed citations

15.

Gallagher, Matt, M. J. Rice, L. Lanzerotti, et al.. (2003). Effects of in-situ arsenic-doped amorphous silicon emitter process on SiGe heterojunction bipolar transistors. 352–358.

16.

Montávez, Juan Pedro, et al.. (1999). A Monte Carlo simulation of the longwave radiation balance in urban structures. Computer Physics Communications. 121-122. 704–704. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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