Bert Brijs

3.2k total citations
118 papers, 2.4k citations indexed

About

Bert Brijs is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Bert Brijs has authored 118 papers receiving a total of 2.4k indexed citations (citations by other indexed papers that have themselves been cited), including 101 papers in Electrical and Electronic Engineering, 34 papers in Computational Mechanics and 31 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Bert Brijs's work include Semiconductor materials and devices (71 papers), Integrated Circuits and Semiconductor Failure Analysis (35 papers) and Ion-surface interactions and analysis (32 papers). Bert Brijs is often cited by papers focused on Semiconductor materials and devices (71 papers), Integrated Circuits and Semiconductor Failure Analysis (35 papers) and Ion-surface interactions and analysis (32 papers). Bert Brijs collaborates with scholars based in Belgium, United States and Germany. Bert Brijs's co-authors include Wilfried Vandervorst, Karen Maex, Thierry Conard, Olivier Richard, Matty Caymax, H. Bender, Annelies Delabie, M.-Y. Ho, G. D. Wilk and Richard Ostwald and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Bert Brijs

115 papers receiving 2.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Bert Brijs Belgium 25 2.0k 984 648 431 268 118 2.4k
Margareta K. Linnarsson Sweden 23 1.8k 0.9× 896 0.9× 562 0.9× 350 0.8× 194 0.7× 133 2.2k
Sadafumi Yoshida Japan 26 1.6k 0.8× 797 0.8× 623 1.0× 665 1.5× 195 0.7× 147 2.3k
H. Cerva Germany 23 994 0.5× 613 0.6× 590 0.9× 241 0.6× 125 0.5× 91 1.5k
Azusa N. Hattori Japan 20 711 0.4× 718 0.7× 361 0.6× 301 0.7× 223 0.8× 129 1.5k
D. Brasen United States 27 1.8k 0.9× 914 0.9× 832 1.3× 356 0.8× 162 0.6× 84 2.5k
E. P. Gusev United States 34 4.3k 2.2× 1.9k 1.9× 679 1.0× 433 1.0× 220 0.8× 84 4.6k
R. D. Twesten United States 27 1.7k 0.9× 1.1k 1.1× 1.1k 1.7× 260 0.6× 144 0.5× 59 2.9k
Tatsuro Miyasato Japan 17 954 0.5× 1.5k 1.5× 553 0.9× 316 0.7× 152 0.6× 80 2.0k
B.J. Sealy United Kingdom 22 1.5k 0.8× 748 0.8× 940 1.5× 111 0.3× 368 1.4× 203 1.9k
E. S. Lambers United States 25 1.9k 0.9× 1.5k 1.6× 324 0.5× 512 1.2× 68 0.3× 110 2.5k

Countries citing papers authored by Bert Brijs

Since Specialization
Citations

This map shows the geographic impact of Bert Brijs's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bert Brijs with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bert Brijs more than expected).

Fields of papers citing papers by Bert Brijs

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bert Brijs. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bert Brijs. The network helps show where Bert Brijs may publish in the future.

Co-authorship network of co-authors of Bert Brijs

This figure shows the co-authorship network connecting the top 25 collaborators of Bert Brijs. A scholar is included among the top collaborators of Bert Brijs based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Bert Brijs. Bert Brijs is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Adelmann, Christoph, Johan Swerts, Olivier Richard, et al.. (2011). Lanthanide Aluminates as Dielectrics for Non-Volatile Memory Applications: Material Aspects. Journal of The Electrochemical Society. 158(8). H778–H784. 7 indexed citations
2.
Popovici, M., Kazuyuki Tomida, Johan Swerts, et al.. (2011). A comparative study of the microstructure–dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach. physica status solidi (a). 208(8). 1920–1924. 19 indexed citations
3.
Adelmann, Christoph, Johan Swerts, Olivier Richard, et al.. (2010). (Invited) Introducing Lanthanide Aluminates as Dielectrics for Nonvolatile Memory Applications: A Material Scientist's View. ECS Transactions. 33(3). 31–42. 7 indexed citations
4.
Popovici, M., Sven Van Elshocht, N. Menou, et al.. (2009). Atomic Layer Deposition of Strontium Titanate Films Using Sr([sup t]Bu[sub 3]Cp)[sub 2] and Ti(OMe)[sub 4]. Journal of The Electrochemical Society. 157(1). G1–G1. 55 indexed citations
5.
Souriau, Laurent, V. Terzieva, Francesca Clemente, et al.. (2008). High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge. Thin Solid Films. 517(1). 23–26. 23 indexed citations
6.
Delabie, Annelies, Matty Caymax, Bert Brijs, et al.. (2006). Scaling to Sub-1 nm Equivalent Oxide Thickness with Hafnium Oxide Deposited by Atomic Layer Deposition. Journal of The Electrochemical Society. 153(8). F180–F180. 42 indexed citations
7.
Brijs, Bert, Timo Sajavaara, Tom Janssens, et al.. (2006). The analysis of a thin SiO2/Si3N4/SiO2 stack: A comparative study of low-energy heavy ion elastic recoil detection, high-resolution Rutherford backscattering and secondary ion mass spectrometry. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 249(1-2). 847–850. 7 indexed citations
8.
Heeg, T., Martin Wagner, J. Schubert, et al.. (2006). Rare-earth Metal Scandate High-k Layers: Promises and Problems. ECS Meeting Abstracts. MA2005-02(13). 505–505.
9.
Schuhmacher, Jörg, Mikhaı̈l R. Baklanov, Richard Ostwald, et al.. (2005). A theoretical and experimental study of atomic-layer-deposited films onto porous dielectric substrates. Journal of Applied Physics. 98(8). 15 indexed citations
10.
Hellin, David, Annelies Delabie, Riikka L. Puurunen, et al.. (2005). Grazing Incidence-X-ray Fluorescence Spectrometry for the Compositional Analysis of Nanometer-Thin High-κDielectric HfO2 Layers. Analytical Sciences. 21(7). 845–850. 16 indexed citations
11.
Hove, M. Van, Youssef Travaly, Timo Sajavaara, et al.. (2005). Study of thermal stability of nickel silicide by X-ray reflectivity. Microelectronic Engineering. 82(3-4). 492–496. 5 indexed citations
12.
Zhao, Chao, T. Witters, Bert Brijs, et al.. (2005). Ternary rare-earth metal oxide high-k layers on silicon oxide. Applied Physics Letters. 86(13). 115 indexed citations
13.
Zhang, W., Richard Ostwald, Bert Brijs, et al.. (2004). Microstructure and resistivity characterization of CuAu I superlattice formed in Cu∕Au thin films. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(6). 2715–2718. 12 indexed citations
14.
Vandervorst, W., et al.. (2004). (A)thermal migration of Ge during junction formation in s-Si layers grown on thin SiGebuffer layers. MRS Proceedings. 809. 4 indexed citations
15.
Elshocht, Sven Van, Bert Brijs, Matty Caymax, et al.. (2004). Deposition of HfO2 on germanium and the impact of surface pretreatments. Applied Physics Letters. 85(17). 3824–3826. 86 indexed citations
16.
Vandervorst, Wilfried, Bert Brijs, H. Bender, et al.. (2003). Physical characterization of ultrathin high k dielectrics. 40–50. 2 indexed citations
17.
Gray, William D., et al.. (2001). A comparative study of copper drift diffusion in plasma deposited a-SiC:H and silicon nitride. Microelectronic Engineering. 55(1-4). 329–335. 26 indexed citations
18.
Roy, W. Van, J. De Boeck, Bert Brijs, & G. Borghs. (2000). Epitaxial NiMnSb films on GaAs(001). Applied Physics Letters. 77(25). 4190–4192. 76 indexed citations
19.
Coster, W. De, et al.. (1996). In situ observation by RBS of oxygen gettering during Cs sputtering of Si-based materials. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 118(1-4). 82–87. 4 indexed citations
20.
Brijs, Bert, W. De Coster, H. Bender, et al.. (1994). Sputtering phenomena of CoSi2 under low energy oxygen bombardment. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 85(1-4). 306–310. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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