Bert Brijs

3.2k citations

118 papers · 2.4k indexed · h-index 25

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 71
- Integrated Circuits and Semiconductor Failure Analysis 35
- Silicon and Solar Cell Technologies 22
- Advancements in Semiconductor Devices and Circuit Design 15
Electronic, Optical and Magnetic Materials top 5%
- Copper Interconnects and Reliability 19
Materials Chemistry top 5%
- Electronic and Structural Properties of Oxides 17
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces 24
Computational Mechanics top 5%
- Ion-surface interactions and analysis 32

Co-authors: Wilfried Vandervorst Karen Maex Thierry Conard Olivier Richard Matty Caymax H. Bender Annelies Delabie G. D. Wilk
Cited by: Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials Materials Chemistry
Journals: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (23 papers)Applied Physics Letters (11 papers)Journal of The Electrochemical Society (9 papers)
Partner nations: Belgium United States Germany

In The Last Decade

Bert Brijs

115 papers receiving 2.3k citations

Peers

Countries citing papers authored by Bert Brijs

Since Specialization

Citations

This map shows the geographic impact of Bert Brijs's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bert Brijs with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bert Brijs more than expected).

Fields of papers citing papers by Bert Brijs

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bert Brijs. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bert Brijs. The network helps show where Bert Brijs may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Bert Brijs, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Bert Brijs Line = papers co-authored together Bert Brijs links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A comparative study of the microstructure–dielectric properties of crystalline SrTiO₃ ALD films obtained via seed layer approach physica status solidi (a) ·M. Popovici,Kazuyuki Tomida,Johan Swerts,Paola Favia,Annelies Delabie,H. Bender,Christoph Adelmann,Hilde Tielens,Bert Brijs,B. Kaczer,Małgorzata Pawlak,Minsoo Kim,L. Altimime,Sven Van Elshocht,J. A. Kittl	2011	19
2	Atomic Layer Deposition of Strontium Titanate Films Using Sr([sup t]Bu[sub 3]Cp)[sub 2] and Ti(OMe)[sub 4] Journal of The Electrochemical Society ·M. Popovici,Sven Van Elshocht,N. Menou,Johan Swerts,Dieter Pierreux,Annelies Delabie,Bert Brijs,Thierry Conard,Karl Opsomer,Jan Willem Maes,Dirk J. Wouters,J. A. Kittl	2009	55
3	High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge Thin Solid Films ·Laurent Souriau,V. Terzieva,F J Tolby,Francesca Clemente,Bert Brijs,Alain Moussa,Marc Meuris,Roger Loo,Matty Caymax	2008	23
4	Growth of Dysprosium‐, Scandium‐, and Hafnium‐based Third Generation High‐κ Dielectrics by Atomic Vapor Deposition Chemical Vapor Deposition ·Christoph Adelmann,P. Lehnen,Sven Van Elshocht,Chao Zhao,Bert Brijs,Alexis Franquet,Thierry Conard,M. Roeckerath,J. Schubert,Л. С. Кращук,C. Lohe,(unknown)	2007	24
5	Observation of the interfacial layer in HfO2(10 nm)/Si by high-resolution RBS in combination with grazing angle sputtering Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Wataru Sakai,K. Nakajima,Motofumi Suzuki,Kenji Kimura,Bert Brijs	2006	2
6	Scaling to Sub-1 nm Equivalent Oxide Thickness with Hafnium Oxide Deposited by Atomic Layer Deposition Journal of The Electrochemical Society ·Annelies Delabie,Matty Caymax,Bert Brijs,D.P. Brunco,Thierry Conard,Erik Sleeckx,Sven Van Elshocht,Lars‐Åke Ragnarsson,Stefan De Gendt,Marc Heyns	2006	42
7	Metallorganic Chemical Vapor Deposition of Dysprosium Scandate High-k Layers Using mmp-Type Precursors Journal of The Electrochemical Society ·Sven Van Elshocht,P. Lehnen,I. V. Yatsyk,A. Abrutis,Christoph Adelmann,Bert Brijs,Matty Caymax,Thierry Conard,Stefan De Gendt,Alexis Franquet,C. Lohe,Mindaugas Lukosius,Alain Moussa,Olivier Richard,Paul A. Williams,T. Witters,Paul Zimmerman,Marc Heyns	2006	18
8	Grazing Incidence-X-ray Fluorescence Spectrometry for the Compositional Analysis of Nanometer-Thin High-κDielectric HfO2 Layers Analytical Sciences ·David Hellin,Annelies Delabie,Riikka L. Puurunen,P.A. Beaven,Thierry Conard,Bert Brijs,Stefan De Gendt,Chris Vinckier	2005	16
9	Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films Applied Physics Letters ·Riikka L. Puurunen,Annelies Delabie,Sven Van Elshocht,Matty Caymax,Martin L. Green,Bert Brijs,Olivier Richard,H. Bender,Thierry Conard,I. Hoflijk,Wilfried Vandervorst,David Hellin,Danielle Vanhaeren,Chao Zhao,Stefan De Gendt,Marc Heyns	2005	40
10	Characterization of high and low k dielectrica using low-energy Time of Flight Elastic Recoil Detection Microelectronic Engineering ·Bert Brijs,Timo Sajavaara,C. M. Johnson,Kai Arstila,A. Vantomme,Wilfried Vandervorst	2005	5
11	A theoretical and experimental study of atomic-layer-deposited films onto porous dielectric substrates Journal of Applied Physics ·Madeleine Boulis,Jörg Schuhmacher,Mikhaı̈l R. Baklanov,C. M. Johnson,Richard Ostwald,Bert Brijs,M. Van Hove,Karen Maex,Thomas Abell,Silvina Demagistri,Marc Hendrickx,L. G. Vanquickenborne,Arnout Ceulemans,Alain M. Jonas	2005	15
12	Deposition of HfO2 on germanium and the impact of surface pretreatments Applied Physics Letters ·Sven Van Elshocht,Bert Brijs,Matty Caymax,Thierry Conard,T. Chiarella,Stefan De Gendt,Brice De Jaeger,Stefan Kubicek,Marc Meuris,Bart Onsia,Olivier Richard,Ivo Teerlinck,Jan Van Steenbergen,Chao Zhao,Marc Heyns	2004	86
13	Very low chemical disorder in epitaxial NiMnSb films on GaAs(111)B Applied Physics Letters ·W. Van Roy,M. Wójcik,E. Jędryka,S. Nadolski,D. Jalabert,Bert Brijs,G. Borghs,J. De Boeck	2003	32
14	Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing G. D. Wilk,Marie-Christine Germain,M.-Y. Ho,B. Busch,T. Sorsch,F. Klemens,Bert Brijs,R. B. van Dover,A. Kornblit,T. Gustafsson,Eric Garfunkel,S.J. Hillenius,D. Monroe,R Coallier,J. M. Hergenrother	2003	19
15	CoSi 2 formation in the presence of carbon Journal of Applied Physics ·Christophe Detavernier,R.L. Van Meirhaeghe,H. Bender,Olivier Richard,Bert Brijs,K. Maex	2002	19
16	A comparative study of copper drift diffusion in plasma deposited a-SiC:H and silicon nitride Microelectronic Engineering ·Morgueto Natalia Oliveira,William D. Gray,Bert Brijs,Karen Maex	2001	26
17	Characterization of ultra thin oxynitrides: A general approach Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Bert Brijs,Abbasi Dezfouli Sepehr,Thierry Conard,H. De Witte,Wilfried Vandervorst,K. Nakajima,Kenji Kimura,N. A. Semenchenko,A. Bergmaier,Dolly Luz,Philipp Neumaier,G. Dollinger,M. Döbeli	2000	19
18	A chemical role of refractory metal caps in Co silicidation: Evidence of SiO₂ reduction by Ti cap Journal of materials research/Pratt's guide to venture capital sources ·Eiichi Kondoh,T. Conard,Bert Brijs,正純長安,H. Bender,M. de Potter,Karen Maex	1999	4
19	In situ observation by RBS of oxygen gettering during Cs sputtering of Si-based materials Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·W. De Coster,Bert Brijs,Abbasi Dezfouli Sepehr,J. L. Alay,Wilfried Vandervorst	1996	4
20	Sputtering phenomena of CoSi2 under low energy oxygen bombardment Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Bert Brijs,W. De Coster,H. Bender,J. L. Alay,Petre Osiceanu,Wilfried Vandervorst	1994	1

About Bert Brijs

Bert Brijs is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Surfaces, Coatings and Films, having authored 118 papers that have together received 2.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (71 papers), Integrated Circuits and Semiconductor Failure Analysis (35 papers), Ion-surface interactions and analysis (32 papers), Semiconductor materials and interfaces (24 papers), Silicon and Solar Cell Technologies (22 papers), Copper Interconnects and Reliability (19 papers), Electronic and Structural Properties of Oxides (17 papers) and Advancements in Semiconductor Devices and Circuit Design (15 papers). The work is most often cited by research in Electrical and Electronic Engineering (2.0k citations), Electronic, Optical and Magnetic Materials (431 citations) and Materials Chemistry (984 citations). Bert Brijs has collaborated with scholars based in Belgium, United States and Germany. Frequent co-authors include Wilfried Vandervorst, Karen Maex, Thierry Conard, Olivier Richard, Matty Caymax, H. Bender, Annelies Delabie, G. D. Wilk, M.-Y. Ho and Richard Ostwald. Their work appears in journals such as Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Applied Physics Letters, Journal of The Electrochemical Society, Journal of Applied Physics and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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