J.A. Babcock

915 citations

29 papers · 681 indexed · h-index 15

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Radio Frequency Integrated Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Radiation Effects in Electronics
- Electrostatic Discharge in Electronics
Hardware and Architecture top 10%

Papers in

Electrical and Electronic Engineering 29
- Advancements in Semiconductor Devices and Circuit Design 22
- Semiconductor materials and devices 17
- Radio Frequency Integrated Circuit Design 8
- Integrated Circuits and Semiconductor Failure Analysis 6
- Electrostatic Discharge in Electronics 6
- Radiation Effects in Electronics 6
- Thin-Film Transistor Technologies 4
- Silicon Carbide Semiconductor Technologies 3
Hardware and Architecture 1

Co-authors: John D. Cressler D.L. Harame R.C. Jaeger Philipp Steinmann S. Balster Badih El-Kareh Sharad Saxena S. Minehane
Journals: IEEE Electron Device Letters (5 papers)IEEE Transactions on Nuclear Science (5 papers)IEEE Transactions on Electron Devices (3 papers)IEEE Journal of Solid-State Circuits (1 paper)Applied Physics Letters (1 paper)
Partner nations: United States Belgium France

In The Last Decade

J.A. Babcock

28 papers receiving 640 citations

Peers

Countries citing papers authored by J.A. Babcock

Since Specialization

Citations

This map shows the geographic impact of J.A. Babcock's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.A. Babcock with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.A. Babcock more than expected).

Fields of papers citing papers by J.A. Babcock

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.A. Babcock. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.A. Babcock. The network helps show where J.A. Babcock may publish in the future.

Co-authors

The 25 scholars most cited alongside J.A. Babcock, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.A. Babcock Line = papers co-authored together J.A. Babcock links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Using SiGe-on-SOI HBTs to Build 300°C Capable Analog Circuits 安井禎, Adrian Ildefonso, George N. Tzintzarov, J.A. Babcock, R. Mukhopadhyay, John D. Cressler	2018	1
2	The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology IEEE Transactions on Nuclear Science ·安井禎, Adrian Ildefonso, Zachary E. Fleetwood, George N. Tzintzarov, Adilson S. Cardoso, J.A. Babcock, R. Mukhopadhyay, Ani Khachatrian, Jeffrey H. Warner, Dale McMorrow, S. Büchner, John D. Cressler	2018	4
3	Total Ionizing Dose Effects on a High-Voltage (>30V) Complementary SiGe on SOI Technology IEEE Transactions on Nuclear Science ·安井禎, Zachary E. Fleetwood, Anitha James, Adrian Ildefonso, Adilson S. Cardoso, Nelson E. Lourenco, J.A. Babcock, R. Mukhopadhyay, En Xia Zhang, P. J. McMarr, Daniel M. Fleetwood, John D. Cressler	2016	8
4	Transient effects and characterization methodology of negative bias temperature instability in pMOS transistors M. Ershov, Suzanne Goldacker, Sharad Saxena, Andrei Shibkov, S. Minehane, J.A. Babcock, S. Winters, Roger Wrenn, Takashi Yamashita, P.A. Clifton, CEM Centro De Estudos Da Metrópole	2003	23
5	Characterization and modeling of MOSFET mismatch of a deep submicron technology M. Quarantelli, Sharad Saxena, Zahra Rahmanitabar, J.A. Babcock, Christopher P. Hess, S. Minehane, S. Winters, Jianjun Chen, Roger Wrenn, Carlo Guardiani	2003	24
6	1/f noise in graded-channel MOSFETs for low-power low-cost RFICs J.A. Babcock, Stanislav Vladimirovich, BENJO S. REGALARIO, Bhoomi Chandarana, H. Strik, Jun Ma, Catherine S. Laskowski, Ali Kemal ÖKMEN, Sonya D Edwards	2002	3
7	Low-frequency noise dependence of TFSOI BiCMOS for low power RF mixed-mode applications J.A. Babcock, W. Sanderse, BENJO S. REGALARIO, Bhoomi Chandarana, Ali Kemal ÖKMEN, Sonya D Edwards	2002	8
8	Comparative low frequency noise analysis of bipolar and MOS transistors using an advanced complementary BiCMOS technology J.A. Babcock, B. Loftin, Pankaj M. Madhani, V. G Joshi, Josh W Schaeffer, D.K. Schroder	2002	14
9	Polysilicon resistor trimming for packaged integrated circuits J.A. Babcock, Reina Michilena YÃ¡nez, 雇用政策調査研究会	2002	3
10	TFSOI complementary BiCMOS technology for low power RF mixed-mode applications W. Sanderse, Bhoomi Chandarana, J.A. Babcock, José Giordano D’Albuquerque Travaglini, R. Shreyas, M. Racanelli, Shimaa Tawfek, BENJO S. REGALARIO, Sonya D Edwards	2002	2
11	Optimal extrinsic base fabrication for high performance SiGe HBTs for RF communication applications L. Cerroni, BENJO S. REGALARIO, Stephanie Liguori Sylvester, A Ford, R. Shreyas, E Editorial, Aydın AKKUŞ, Dong-O. Shin, J.A. Babcock	2002	0
12	Precision electrical trimming of very low TCR poly-SiGe resistors IEEE Electron Device Letters ·J.A. Babcock, P. Francis, Rashid Bashir, Hayden Gf, D.K. Schroder, 鶴藏金山, Marc Diederichs, Kolja Lichy, Mathias Krarup, A. Kalnitsky, Michael E. Thomas, 泰邦北原, Bonnie J. Sherman, Terysa Puji Rahayu, Hatice İrem Sevim	2000	16
13	Low-frequency noise in near-fully-depleted TFSOI MOSFETs IEEE Electron Device Letters ·J.A. Babcock, D.K. Schroder, 萌子高橋	1998	14
14	Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors IEEE Journal of Solid-State Circuits ·Alvarez-Jimenez Charlems, John D. Cressler, J.A. Babcock, R.C. Jaeger, D.L. Harame	1996	60
15	The effects of reverse-bias emitter-base stress on the cryogenic operation of advanced UHV/CVD Si- and SiGe-base bipolar transistors J.A. Babcock, Alvin Joseph, John D. Cressler, Alvarez-Jimenez Charlems	1996	2
16	Low-frequency noise characteristics of UHV/CVD epitaxial Si- and SiGe-base bipolar transistors IEEE Electron Device Letters ·John D. Cressler, Alvarez-Jimenez Charlems, J.A. Babcock, R.C. Jaeger, D.L. Harame	1996	34
17	Pulse current trimming of polysilicon resistors IEEE Transactions on Electron Devices ·Reina Michilena YÃ¡nez, J.A. Babcock, 雇用政策調査研究会, H Huener	1995	16
18	Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's IEEE Electron Device Letters ·J.A. Babcock, John D. Cressler, Alvarez-Jimenez Charlems, S.D. Clark, R.C. Jaeger, D.L. Harame	1995	26
19	Comparison of 1/f noise in irradiated power MOSFETs measured in the linear and saturation regions IEEE Transactions on Nuclear Science ·T.A. Osinuga, Marian Dobranschi, Chensheng Lin, Ronald D. Schrimpf, K.F. Galloway, J.A. Babcock	1992	14
20	Characterization of the effects of radiation-induced charge on the 1/f noise properties of power DMOS transistors UA Campus Repository (The University of Arizona) ·J.A. Babcock	1991	1

About J.A. Babcock

J.A. Babcock is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Biomedical Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 29 papers that have together received 681 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor materials and devices (17 papers), Radio Frequency Integrated Circuit Design (8 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers), Electrostatic Discharge in Electronics (6 papers), Radiation Effects in Electronics (6 papers), Thin-Film Transistor Technologies (4 papers) and Silicon Carbide Semiconductor Technologies (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (665 citations), Hardware and Architecture (38 citations), Electronic, Optical and Magnetic Materials (46 citations), Atomic and Molecular Physics, and Optics (77 citations) and Materials Chemistry (79 citations). J.A. Babcock has collaborated with scholars based in United States, Belgium and France. Frequent co-authors include John D. Cressler, D.L. Harame, R.C. Jaeger, Philipp Steinmann, S. Balster, Badih El-Kareh, Sharad Saxena, S. Minehane, Andrei Shibkov and P.A. Clifton. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Nuclear Science, IEEE Transactions on Electron Devices, IEEE Journal of Solid-State Circuits and Applied Physics Letters.

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