M. J. Bevan

1.2k total citations
50 papers, 818 citations indexed

About

M. J. Bevan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. J. Bevan has authored 50 papers receiving a total of 818 indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 19 papers in Materials Chemistry. Recurrent topics in M. J. Bevan's work include Semiconductor materials and devices (23 papers), Advanced Semiconductor Detectors and Materials (18 papers) and Chalcogenide Semiconductor Thin Films (16 papers). M. J. Bevan is often cited by papers focused on Semiconductor materials and devices (23 papers), Advanced Semiconductor Detectors and Materials (18 papers) and Chalcogenide Semiconductor Thin Films (16 papers). M. J. Bevan collaborates with scholars based in United States, United Kingdom and India. M. J. Bevan's co-authors include Luigi Colombo, M. R. Visokay, H. D. Shih, Deeba Husain, Manuel Quevedo-López, Bruce E. Gnade, Robert M. Wallace, Lancy Tsung, M. El-Bouanani and Antonio Rotondaro and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and The Journal of Physical Chemistry.

In The Last Decade

M. J. Bevan

50 papers receiving 768 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. J. Bevan United States 16 712 309 263 68 39 50 818
H. Siekmann Germany 12 457 0.6× 500 1.6× 133 0.5× 87 1.3× 24 0.6× 21 678
J.H. Craig United States 14 353 0.5× 312 1.0× 201 0.8× 37 0.5× 36 0.9× 76 614
M. L. Martiarena Argentina 15 197 0.3× 182 0.6× 244 0.9× 35 0.5× 46 1.2× 43 544
E. M. Swiggard United States 15 314 0.4× 324 1.0× 254 1.0× 60 0.9× 20 0.5× 26 585
Y. Feutelais France 16 230 0.3× 499 1.6× 174 0.7× 76 1.1× 33 0.8× 39 719
Т.V. Kotereva Russia 18 636 0.9× 616 2.0× 215 0.8× 19 0.3× 52 1.3× 65 996
Michihiro Hashinokuchi Japan 19 576 0.8× 279 0.9× 127 0.5× 71 1.0× 119 3.1× 50 935
Herbert Engstrom United States 15 269 0.4× 389 1.3× 115 0.4× 55 0.8× 21 0.5× 29 554
Thomas R. Omstead United States 9 252 0.4× 129 0.4× 140 0.5× 124 1.8× 11 0.3× 13 413
L. Jeloaica France 9 265 0.4× 416 1.3× 185 0.7× 31 0.5× 28 0.7× 14 564

Countries citing papers authored by M. J. Bevan

Since Specialization
Citations

This map shows the geographic impact of M. J. Bevan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. J. Bevan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. J. Bevan more than expected).

Fields of papers citing papers by M. J. Bevan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. J. Bevan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. J. Bevan. The network helps show where M. J. Bevan may publish in the future.

Co-authorship network of co-authors of M. J. Bevan

This figure shows the co-authorship network connecting the top 25 collaborators of M. J. Bevan. A scholar is included among the top collaborators of M. J. Bevan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. J. Bevan. M. J. Bevan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Joshi, K., Shih‐Ya Hung, Subhadeep Mukhopadhyay, et al.. (2012). Scaled Gate Stacks for Sub-20-nm CMOS Logic Applications Through Integration of Thermal IL and ALD HfOx. IEEE Electron Device Letters. 34(1). 3–5. 9 indexed citations
3.
Quevedo-López, Manuel, M. R. Visokay, M. J. Bevan, et al.. (2005). Dopant penetration studies through Hf silicate. Journal of Applied Physics. 97(4). 29 indexed citations
4.
Shanware, A., M. R. Visokay, Antonio Rotondaro, et al.. (2003). Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics. 208–213. 20 indexed citations
5.
Quevedo-López, Manuel, M. El-Bouanani, Bruce E. Gnade, et al.. (2002). Boron penetration studies from p+ polycrystalline Si through HfSixOy. Applied Physics Letters. 81(6). 1074–1076. 37 indexed citations
6.
Quevedo-López, Manuel, M. El-Bouanani, Bruce E. Gnade, et al.. (2002). Interdiffusion studies for HfSixOy and ZrSixOy on Si. Journal of Applied Physics. 92(7). 3540–3550. 41 indexed citations
7.
Quevedo-López, Manuel, M. El-Bouanani, J.L. Duggan, et al.. (2001). Thermally induced Zr incorporation into Si from zirconium silicate thin films. Applied Physics Letters. 79(18). 2958–2960. 28 indexed citations
8.
Bu, H., et al.. (2001). Investigation of polycrystalline silicon grain structure with single wafer chemical vapor deposition technique. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 19(4). 1898–1901. 3 indexed citations
9.
Aqariden, F., W. M. Duncan, H. D. Shih, L. A. Almeida, & M. J. Bevan. (1999). Effect of incident angle in spectral ellipsometry on composition control during molecular beam epitaxial growth of HgCdTe. Journal of Electronic Materials. 28(6). 756–759. 5 indexed citations
10.
Bevan, M. J., et al.. (1998). Preparation of ZnSe light-emitting diodes by metalorganic chemical vapor deposition using trisdimethylaminoarsine as a p-type doping source. Journal of Electronic Materials. 27(6). 769–771. 7 indexed citations
11.
Bevan, M. J., et al.. (1997). Growth of high quality ZnSe on closely lattice-matched InGaAs substrates by metal organic chemical vapor deposition. Journal of Crystal Growth. 170(1-4). 467–471. 3 indexed citations
12.
Bevan, M. J., et al.. (1996). In situ sensors for monitoring and control in molecular beam epitaxial growth of Hg1−xCdxTe. Journal of Electronic Materials. 25(8). 1371–1374. 9 indexed citations
13.
Bartholomew, D. U., et al.. (1995). 1/f noise and material defects in HgCdTe diodes. Journal of Electronic Materials. 24(9). 1299–1303. 9 indexed citations
14.
Bevan, M. J., et al.. (1992). Organometallic vapor-phase epitaxy of Hg1−xCdxTe on {211}-oriented substrates. Journal of Applied Physics. 71(1). 204–210. 10 indexed citations
15.
Bevan, M. J., N Doyle, & David W. Snyder. (1990). A comparison of Hg1−xCdxTe MOCVD films on lattice-matched (CdZn)Te and Cd(TeSe) substrates. Journal of Crystal Growth. 102(4). 785–792. 10 indexed citations
16.
Noreika, A. J., et al.. (1989). Low-level extrinsic doping for p- and n-type (100) HgCdTe grown by molecular-beam epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 7(2). 440–444. 7 indexed citations
17.
Raccah, P. M., et al.. (1986). Influence of layer thickness on the quality of mercury cadmium telluride epilayers grown by the interdiffused multilayer process. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(4). 2226–2229. 10 indexed citations
18.
Bevan, M. J., et al.. (1984). Implementation of a computer-controlled MOVPE system to grow epitaxial CMT. Journal of Crystal Growth. 68(1). 254–261. 28 indexed citations
19.
Bevan, M. J. & Deeba Husain. (1976). Collisional quenching of electronically excited bismuth atoms, Bi(6p3 2D3/2) and Bi(6p3 2D5/2), by time-resolved attenuation of atomic resonance radiation. The Journal of Physical Chemistry. 80(3). 217–223. 12 indexed citations
20.
Bevan, M. J. & Deeba Husain. (1975). Kinetic study of electronically excited antimony atoms, Sb(52D3/2,5/2), by time-resolved attenuation of atomic resonance radiation. Journal of Photochemistry. 4(1-2). 51–61. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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