Siddarth Krishnan

1.5k total citations
65 papers, 892 citations indexed

About

Siddarth Krishnan is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Biomedical Engineering. According to data from OpenAlex, Siddarth Krishnan has authored 65 papers receiving a total of 892 indexed citations (citations by other indexed papers that have themselves been cited), including 63 papers in Electrical and Electronic Engineering, 8 papers in Electronic, Optical and Magnetic Materials and 4 papers in Biomedical Engineering. Recurrent topics in Siddarth Krishnan's work include Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers) and Ferroelectric and Negative Capacitance Devices (28 papers). Siddarth Krishnan is often cited by papers focused on Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers) and Ferroelectric and Negative Capacitance Devices (28 papers). Siddarth Krishnan collaborates with scholars based in United States, India and Canada. Siddarth Krishnan's co-authors include E. Cartier, Rino Choi, A. Kerber, Hag‐Ju Cho, Chang Seok Kang, J.C. Lee, R. Nieh, M.S. Akbar, B.P. Linder and Jeong Hee Han and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Siddarth Krishnan

61 papers receiving 852 citations

Peers

Countries citing papers authored by Siddarth Krishnan

Since Specialization

Citations

This map shows the geographic impact of Siddarth Krishnan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Siddarth Krishnan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Siddarth Krishnan more than expected).

Fields of papers citing papers by Siddarth Krishnan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Siddarth Krishnan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Siddarth Krishnan. The network helps show where Siddarth Krishnan may publish in the future.

Co-authorship network of co-authors of Siddarth Krishnan

This figure shows the co-authorship network connecting the top 25 collaborators of Siddarth Krishnan. A scholar is included among the top collaborators of Siddarth Krishnan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Siddarth Krishnan. Siddarth Krishnan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Title	Journal	Authors	Indexed citations
1	An 8-bit 20.7 TOPS/W Multilevel Cell ReRAM Macro With ADC-Assisted Bit-Serial Processing	IEEE Journal of Solid-State Circuits	Justin M. Correll, Jie Lu et al.	2
2	Performance comparison of photosensitive polyimides for high-resolution dual-damascene schemes for FOWLP packaging applications		Luisa Bozano, B. Briggs et al.	1
3	Novel Mobility Enhancement Schemes for Next Generation Silicon Carbide (SiC) Trench MOSFET Technology		Stephen Weeks, Joshua Holt et al.	0
4	Bulk‐Switching Memristor‐Based Compute‐In‐Memory Module for Deep Neural Network Training	Advanced Materials	Yuting Wu, Qiwen Wang et al.	27
5	Novel Materials and Processes in Replacement Metal Gate for Advanced CMOS Technology		Ruqiang Bao, Steven Hung et al.	8
6	An Analytical Metal Resistance Model and Its Application for Sub-22-nm Metal-Gate CMOS	IEEE Electron Device Letters	Xin Miao, Ruqiang Bao et al.	8
7	Replacement metal gate resistance in FinFET architecture modelling, validation and extendibility		Ruqiang Bao, B. Greene et al.	1
8	Assessment of minority-alloy component segregation (e.g. Mn, Al) in back end of line copper trench structures using Kelvin probe technique		Joyeeta Nag, A. Simon et al.	1
9	Characterization and optimization of charge trapping in high-k dielectrics		E. Cartier, Takashi Ando et al.	9
10	Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs	Microelectronics Reliability	Jiseok Kim, Siddarth Krishnan et al.	16
11	A novel atomic layer oxidation technique for EOT scaling in gate-last high-к/metal gate CMOS technology		Min Dai, Jinping Liu et al.	6
12	The effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliability		B.P. Linder, E. Cartier et al.	13
13	Dipole Moment Model Explaining nFET V<inf>t</inf> Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics		P. Sivasubramani, T. S. Böscke et al.	49
14	Impact of Nitrogen on PBTI Characteristics of HfSiON/TiN Gate Stacks		Siddarth Krishnan, Manuel Quevedo-López et al.	7
15	Effects of nitrogen-incorporated interface layer on the transient characteristics of hafnium oxide n-metal–oxide–semiconductor field-effect transistors	Applied Physics Letters	Chang Yong Kang, Se Jong Rhee et al.	2
16	Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y/sub 2/O/sub 3//HfO/sub 2/ gate dielectric	IEEE Electron Device Letters	Feng Zhu, Se Jong Rhee et al.	4
17	Positive bias temperature instability effects of Hf-based nMOSFETs with various nitrogen and silicon profiles	IEEE Electron Device Letters	Changhwan Choi, Changseok Kang et al.	11
18	High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode		Rino Choi, K. Onishi et al.	1
19	A comprehensive assessment of microtrenching during high density polysilicon etch		R. Kraft, Siddarth Krishnan et al.	1
20	Cryogenic distribution system	Indian Journal of Pure & Applied Physics	Siddarth Krishnan et al.	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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