Siddarth Krishnan

1.5k total citations
65 papers, 892 citations indexed

About

Siddarth Krishnan is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Biomedical Engineering. According to data from OpenAlex, Siddarth Krishnan has authored 65 papers receiving a total of 892 indexed citations (citations by other indexed papers that have themselves been cited), including 63 papers in Electrical and Electronic Engineering, 8 papers in Electronic, Optical and Magnetic Materials and 4 papers in Biomedical Engineering. Recurrent topics in Siddarth Krishnan's work include Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers) and Ferroelectric and Negative Capacitance Devices (28 papers). Siddarth Krishnan is often cited by papers focused on Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers) and Ferroelectric and Negative Capacitance Devices (28 papers). Siddarth Krishnan collaborates with scholars based in United States, India and Canada. Siddarth Krishnan's co-authors include E. Cartier, Rino Choi, A. Kerber, Hag‐Ju Cho, Chang Seok Kang, J.C. Lee, R. Nieh, M.S. Akbar, B.P. Linder and Jeong Hee Han and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Siddarth Krishnan

61 papers receiving 852 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Siddarth Krishnan United States 19 873 126 72 64 22 65 892
J.-L. Ogier France 7 720 0.8× 171 1.4× 86 1.2× 54 0.8× 17 0.8× 29 749
R. Bellens Belgium 13 1.6k 1.8× 243 1.9× 117 1.6× 75 1.2× 22 1.0× 40 1.6k
K.F. Schuegraf United States 8 827 0.9× 197 1.6× 46 0.6× 91 1.4× 8 0.4× 11 858
Bich-Yen Nguyen France 19 1.3k 1.5× 355 2.8× 88 1.2× 96 1.5× 41 1.9× 119 1.4k
Chun‐Yen Chang Taiwan 13 466 0.5× 202 1.6× 28 0.4× 70 1.1× 9 0.4× 63 515
Kaizhen Han Singapore 20 975 1.1× 369 2.9× 75 1.0× 66 1.0× 14 0.6× 88 1.1k
Junshuai Chai China 12 335 0.4× 190 1.5× 37 0.5× 63 1.0× 11 0.5× 57 423
Jongmin Kim South Korea 13 432 0.5× 192 1.5× 44 0.6× 72 1.1× 14 0.6× 66 524
Hubert Hody Belgium 13 428 0.5× 169 1.3× 50 0.7× 67 1.0× 16 0.7× 39 488
K. Schuegraf United States 8 280 0.3× 88 0.7× 34 0.5× 33 0.5× 23 1.0× 20 335

Countries citing papers authored by Siddarth Krishnan

Since Specialization
Citations

This map shows the geographic impact of Siddarth Krishnan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Siddarth Krishnan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Siddarth Krishnan more than expected).

Fields of papers citing papers by Siddarth Krishnan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Siddarth Krishnan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Siddarth Krishnan. The network helps show where Siddarth Krishnan may publish in the future.

Co-authorship network of co-authors of Siddarth Krishnan

This figure shows the co-authorship network connecting the top 25 collaborators of Siddarth Krishnan. A scholar is included among the top collaborators of Siddarth Krishnan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Siddarth Krishnan. Siddarth Krishnan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Correll, Justin M., Jie Lu, Wei Tang, et al.. (2025). An 8-bit 20.7 TOPS/W Multilevel Cell ReRAM Macro With ADC-Assisted Bit-Serial Processing. IEEE Journal of Solid-State Circuits. 60(8). 2995–3008. 2 indexed citations
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Wu, Yuting, Qiwen Wang, Ziyu Wang, et al.. (2023). Bulk‐Switching Memristor‐Based Compute‐In‐Memory Module for Deep Neural Network Training. Advanced Materials. 35(46). e2305465–e2305465. 27 indexed citations
5.
Bao, Ruqiang, Steven Hung, Miaomiao Wang, et al.. (2018). Novel Materials and Processes in Replacement Metal Gate for Advanced CMOS Technology. 11.4.1–11.4.4. 8 indexed citations
6.
Miao, Xin, Ruqiang Bao, U. Kwon, et al.. (2015). An Analytical Metal Resistance Model and Its Application for Sub-22-nm Metal-Gate CMOS. IEEE Electron Device Letters. 36(4). 384–386. 8 indexed citations
7.
Bao, Ruqiang, B. Greene, U. Kwon, et al.. (2015). Replacement metal gate resistance in FinFET architecture modelling, validation and extendibility. 1 indexed citations
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Cartier, E., Takashi Ando, M. Hopstaken, et al.. (2013). Characterization and optimization of charge trapping in high-k dielectrics. 5A.2.1–5A.2.7. 9 indexed citations
10.
Kim, Jiseok, Siddarth Krishnan, Sudarshan Narayanan, M. Chudzik, & Massimo V. Fischetti. (2012). Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs. Microelectronics Reliability. 52(12). 2907–2913. 16 indexed citations
11.
Dai, Min, Jinping Liu, Dechao Guo, et al.. (2011). A novel atomic layer oxidation technique for EOT scaling in gate-last high-к/metal gate CMOS technology. 86. 28.5.1–28.5.4. 6 indexed citations
12.
Linder, B.P., E. Cartier, Siddarth Krishnan, J. H. Stathis, & A. Kerber. (2009). The effect of interface thickness of high-k/metal gate stacks on NFET dielectric reliability. 510–513. 13 indexed citations
13.
Sivasubramani, P., T. S. Böscke, Jiping Huang, et al.. (2007). Dipole Moment Model Explaining nFET V<inf>t</inf> Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics. 68–69. 49 indexed citations
14.
Krishnan, Siddarth, Manuel Quevedo-López, Paul Kirsch, et al.. (2006). Impact of Nitrogen on PBTI Characteristics of HfSiON/TiN Gate Stacks. 5. 325–328. 7 indexed citations
15.
Kang, Chang Yong, Se Jong Rhee, Chang‐Hwan Choi, et al.. (2005). Effects of nitrogen-incorporated interface layer on the transient characteristics of hafnium oxide n-metal–oxide–semiconductor field-effect transistors. Applied Physics Letters. 86(12). 2 indexed citations
16.
Zhu, Feng, Se Jong Rhee, Chang Yong Kang, et al.. (2005). Improving channel carrier mobility and immunity to charge trapping of high-K NMOSFET by using stacked Y/sub 2/O/sub 3//HfO/sub 2/ gate dielectric. IEEE Electron Device Letters. 26(12). 876–878. 4 indexed citations
17.
Choi, Changhwan, Changseok Kang, Chang Yong Kang, et al.. (2004). Positive bias temperature instability effects of Hf-based nMOSFETs with various nitrogen and silicon profiles. IEEE Electron Device Letters. 26(1). 32–34. 11 indexed citations
18.
Choi, Rino, K. Onishi, R. Nieh, et al.. (2003). High quality MOSFETs fabrication with HfO/sub 2/ gate dielectric and tan gate electrode. 193–194. 1 indexed citations
19.
Kraft, R., Siddarth Krishnan, Bruce K. Gale, et al.. (2002). A comprehensive assessment of microtrenching during high density polysilicon etch. 84–87. 1 indexed citations
20.
Krishnan, Siddarth, et al.. (2001). Cryogenic distribution system. Indian Journal of Pure & Applied Physics. 39. 54–57. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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