Siddarth Krishnan

1.5k citations

65 papers · 892 · h-index 19

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability

Papers in

Electrical and Electronic Engineering 63
- Semiconductor materials and devices 55
- Advancements in Semiconductor Devices and Circuit Design 44
- Ferroelectric and Negative Capacitance Devices 28
- Integrated Circuits and Semiconductor Failure Analysis 19
- Advanced Memory and Neural Computing 7
- Particle Accelerators and Free-Electron Lasers 2
Electronic, Optical and Magnetic Materials 8
- Copper Interconnects and Reliability 8

Co-authors: E. Cartier (14 shared papers)Rino Choi (20 shared papers)A. Kerber (8 shared papers)Hag‐Ju Cho (8 shared papers)Chang Seok Kang (8 shared papers)J.C. Lee (12 shared papers)R. Nieh (7 shared papers)M.S. Akbar (9 shared papers)
Journals: IEEE Electron Device Letters (10 papers)Applied Physics Letters (5 papers)Microelectronics Reliability (2 papers)IEEE Transactions on Electron Devices (2 papers)IEEE Journal of Solid-State Circuits (1 paper)
Partner nations: United States India Canada

In The Last Decade

Siddarth Krishnan

61 papers receiving 852 citations

Peers

Countries citing papers authored by Siddarth Krishnan

Since Specialization

Citations

This map shows the geographic impact of Siddarth Krishnan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Siddarth Krishnan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Siddarth Krishnan more than expected).

Fields of papers citing papers by Siddarth Krishnan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Siddarth Krishnan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Siddarth Krishnan. The network helps show where Siddarth Krishnan may publish in the future.

Co-authors

The 25 scholars most cited alongside Siddarth Krishnan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Siddarth Krishnan Line = papers co-authored together Siddarth Krishnan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 65 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs IEEE Transactions on Electron Devices ·K. Onishi, Rino Choi, Chang Seok Kang, Hag‐Ju Cho, Young Hee Kim, R. Nieh, Jeong Hee Han, Siddarth Krishnan, M.S. Akbar, J.C. Lee	2003	95
2	Fundamental aspects of HfO<inf>2</inf>-based high-k metal gate stack reliability and implications on t<inf>inv</inf>-scaling E. Cartier, A. Kerber, Takashi Ando, Martin M. Frank, Kwang‐Il Choi, Siddarth Krishnan, B.P. Linder, Kai Zhao, F. Monsieur, J. H. Stathis, Vijay Narayanan	2011	66
3	Voltage Ramp Stress for Bias Temperature Instability Testing of Metal-Gate/High- $k$ Stacks IEEE Electron Device Letters ·A. Kerber, Siddarth Krishnan, E. Cartier	2009	63
4	Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing IEEE Transactions on Electron Devices ·R. Nieh, Chang Seok Kang, Hag‐Ju Cho, K. Onishi, Rino Choi, Siddarth Krishnan, Jeong Hee Han, Younghee Kim, M.S. Akbar, J.C. Lee	2003	53
5	Dipole Moment Model Explaining nFET V<inf>t</inf> Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics P. Sivasubramani, T. S. Böscke, Jiping Huang, Chadwin D. Young, P. D. Kirsch, Siddarth Krishnan, Manuel Quevedo-López, S. Govindarajan, Byongsun Ju, H. R. Harris, Daniel J. Lichtenwalner, Jesse S. Jur, Angus I. Kingon, Jin-Soo Kim, Bruce E. Gnade, Robert M. Wallace, G. Bersuker, B. H. Lee, R. Jammy	2007	49
6	Evaluation of silicon surface nitridation effects on ultra-thin ZrO2 gate dielectrics Applied Physics Letters ·R. Nieh, Rino Choi, Sundararaman Gopalan, Katsunori Onishi, Chang Seok Kang, Hag‐Ju Cho, Siddarth Krishnan, Jack C. Lee	2002	36
7	Area dependence of TDDB characteristics for HfO₂ gate dielectrics IEEE Electron Device Letters ·Young Hee Kim, K. Onishi, Chang Seok Kang, Hag‐Ju Cho, R. Nieh, Sundararaman Gopalan, Rino Choi, Jeong Hee Han, Siddarth Krishnan, J.C. Lee	2002	36
8	TDDB failure distribution of metal gate/high-k CMOS devices on SOI substrates A. Kerber, E. Cartier, B.P. Linder, Siddarth Krishnan, T. Nigam	2009	35
9	A novel approach to characterization of progressive breakdown in high-k/metal gate stacks Microelectronics Reliability ·Roberto Pagano, S. Lombardo, Félix Palumbo, P. D. Kirsch, Siddarth Krishnan, Chadwin D. Young, Rino Choi, G. Bersuker, J. H. Stathis	2008	31
10	Thickness dependence of Weibull slopes of HfO₂ gate dielectrics IEEE Electron Device Letters ·Young Hee Kim, K. Onishi, Chang Seok Kang, Hag‐Ju Cho, Rino Choi, Siddarth Krishnan, M.S. Akbar, J.C. Lee	2003	29
11	An 8-bit 20.7 TOPS/W Multi-Level Cell ReRAM-based Compute Engine 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Justin M. Correll, Jie Lu, Seungheun Song, Seungjong Lee, Junkang Zhu, Wei Tang, Luke Wormald, Jack Erhardt, N. Breil, Roger Quon, Deepak Kamalanathan, Siddarth Krishnan, M. Chudzik, Zhengya Zhang, Wei Lü, Michael P. Flynn	2022	28
12	Bulk‐Switching Memristor‐Based Compute‐In‐Memory Module for Deep Neural Network Training Advanced Materials ·Yuting Wu, Qiwen Wang, Ziyu Wang, Xinxin Wang, Buvna Ayyagari, Siddarth Krishnan, M. Chudzik, Wei Lü	2023	27
13	Aggressively scaled ultra thin undoped HfO/sub 2/ gate dielectric (EOT<0.7 nm) with TaN gate electrode using engineered interface layer IEEE Electron Device Letters ·Chang‐Hwan Choi, Chang-Yong Kang, Se Jong Rhee, M.S. Akbar, Siddarth Krishnan, Manhong Zhang, Hyoung-Sub Kim, Tackhwi Lee, Kang Min Ok, Feng Zhu, J.C. Lee	2005	25
14	Electric-field-driven dielectric breakdown of metal-insulator-metal hafnium silicate Applied Physics Letters ·Byoung Hun Lee, Chang Yong Kang, Paul Kirsch, Dawei Heh, Chadwin D. Young, Hongbae Park, Ji‐Woon Yang, G. Bersuker, Siddarth Krishnan, Rino Choi, Hi‐Deok Lee	2007	23
15	Fabrication of high quality ultra-thin HfO/sub 2/ gate dielectric MOSFETs using deuterium anneal Rino Choi, K. Onishi, Chang Seok Kang, Sundararaman Gopalan, R. Nieh, Y.H. Kim, Jeong Hee Han, Siddarth Krishnan, Hag‐Ju Cho, Arif Shahriar, J.C. Lee	2003	21
16	Hafnium Titanate bilayer structure multimetal dielectric nMOSCAPs IEEE Electron Device Letters ·Se Jong Rhee, Feng Zhu, Hyoung-Sub Kim, Chang‐Hwan Choi, Chang Yong Kang, Manhong Zhang, Tackhwi Lee, Kang Min Ok, Siddarth Krishnan, J.C. Lee	2006	21
17	Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness Journal of Applied Physics ·Min Dai, Yanfeng Wang, J. Shepard, Jinping Liu, Maryjane Brodsky, S. Siddiqui, P. Ronsheim, Dimitris P. Ioannou, Chandra Reddy, W.K. Henson, Siddarth Krishnan, Vijay Narayanan, M. Chudzik	2013	21
18	Effects of deuterium anneal on MOSFETs with HfO₂ gate dielectrics IEEE Electron Device Letters ·Rino Choi, K. Onishi, Chang Seok Kang, Hag‐Ju Cho, Y.H. Kim, Siddarth Krishnan, M.S. Akbar, J.C. Lee	2003	20
19	Bias temperature instability in High-κ/metal gate transistors - Gate stack scaling trends Siddarth Krishnan, Vijay Narayanan, E. Cartier, Dimitris P. Ioannou, Kai Zhao, Takashi Ando, U. Kwon, B.P. Linder, J. H. Stathis, M. Chudzik, A. Kerber, Kisik Choi	2012	18
20	Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs Microelectronics Reliability ·Jiseok Kim, Siddarth Krishnan, Sudarshan Narayanan, M. Chudzik, Massimo V. Fischetti	2012	16

About Siddarth Krishnan

Siddarth Krishnan is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Biomedical Engineering, Aerospace Engineering and Materials Chemistry, having authored 65 papers that have together received 892 indexed citations. Recurring topics across this work include Semiconductor materials and devices (55 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers), Ferroelectric and Negative Capacitance Devices (28 papers), Integrated Circuits and Semiconductor Failure Analysis (19 papers), Copper Interconnects and Reliability (8 papers), Advanced Memory and Neural Computing (7 papers), Metal and Thin Film Mechanics (2 papers) and Particle Accelerators and Free-Electron Lasers (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (873 citations), Electronic, Optical and Magnetic Materials (72 citations), Materials Chemistry (126 citations), Atomic and Molecular Physics, and Optics (64 citations) and Hardware and Architecture (12 citations). Siddarth Krishnan has collaborated with scholars based in United States, India and Canada. Frequent co-authors include E. Cartier, Rino Choi, A. Kerber, Hag‐Ju Cho, Chang Seok Kang, J.C. Lee, R. Nieh, M.S. Akbar, B.P. Linder and Jeong Hee Han. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Microelectronics Reliability, IEEE Transactions on Electron Devices and IEEE Journal of Solid-State Circuits.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Siddarth Krishnan

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