A. J. Mayur

735 total citations
38 papers, 505 citations indexed

About

A. J. Mayur is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. J. Mayur has authored 38 papers receiving a total of 505 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 26 papers in Atomic and Molecular Physics, and Optics and 9 papers in Materials Chemistry. Recurrent topics in A. J. Mayur's work include Semiconductor materials and devices (16 papers), Semiconductor materials and interfaces (14 papers) and Silicon and Solar Cell Technologies (11 papers). A. J. Mayur is often cited by papers focused on Semiconductor materials and devices (16 papers), Semiconductor materials and interfaces (14 papers) and Silicon and Solar Cell Technologies (11 papers). A. J. Mayur collaborates with scholars based in United States, Belgium and Austria. A. J. Mayur's co-authors include A. K. Ramdas, S. Rodríguez, I. Miotkowski, Eunsoon Oh, A. K. Ramdas, M. K. Udo, C. Parks, Naoto Horiguchi, K. De Meyer and Marc Schaekers and has published in prestigious journals such as Physical review. B, Condensed matter, Solid State Communications and IEEE Electron Device Letters.

In The Last Decade

A. J. Mayur

37 papers receiving 477 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. J. Mayur United States 14 415 280 162 49 31 38 505
J. S. Park United States 7 336 0.8× 292 1.0× 159 1.0× 60 1.2× 47 1.5× 9 451
Z. F. Krasil’nik Russia 11 309 0.7× 308 1.1× 304 1.9× 103 2.1× 21 0.7× 80 457
J.-Y. Emery France 16 674 1.6× 513 1.8× 122 0.8× 47 1.0× 16 0.5× 52 796
R. J. Dalby United States 12 493 1.2× 465 1.7× 151 0.9× 33 0.7× 26 0.8× 21 562
F. Voillot France 14 288 0.7× 344 1.2× 189 1.2× 38 0.8× 19 0.6× 36 453
Z.-H. Huang United States 10 127 0.3× 181 0.6× 127 0.8× 50 1.0× 28 0.9× 24 315
P. Maurel France 15 508 1.2× 515 1.8× 116 0.7× 68 1.4× 13 0.4× 45 617
R. Knappe Germany 14 629 1.5× 578 2.1× 86 0.5× 56 1.1× 113 3.6× 44 753
D. V. Yurasov Russia 10 289 0.7× 230 0.8× 178 1.1× 69 1.4× 56 1.8× 71 378
Hiroshi Yamada‐Kaneta Japan 10 285 0.7× 148 0.5× 200 1.2× 35 0.7× 22 0.7× 53 371

Countries citing papers authored by A. J. Mayur

Since Specialization
Citations

This map shows the geographic impact of A. J. Mayur's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. J. Mayur with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. J. Mayur more than expected).

Fields of papers citing papers by A. J. Mayur

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. J. Mayur. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. J. Mayur. The network helps show where A. J. Mayur may publish in the future.

Co-authorship network of co-authors of A. J. Mayur

This figure shows the co-authorship network connecting the top 25 collaborators of A. J. Mayur. A scholar is included among the top collaborators of A. J. Mayur based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. J. Mayur. A. J. Mayur is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sharma, Shashank, et al.. (2018). Advanced Millisecond Annealing Approaches for High-k Metal Gate and Contact Scaling. ECS Transactions. 86(2). 3–10. 1 indexed citations
2.
Hung, Raymond, Hua Chung, Miao Jin, et al.. (2018). Novel solutions to enable contact resistivity <1E-9 Ω-cm2 for 5nm node and beyond. 3 indexed citations
3.
Schaekers, Marc, Hao Yu, Andriy Hikavyy, et al.. (2017). Sub-10−9 Ω·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation. T214–T215. 27 indexed citations
4.
5.
Yu, Hao, Marc Schaekers, T. Schram, et al.. (2016). Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium. IEEE Electron Device Letters. 37(4). 482–485. 27 indexed citations
6.
Sharma, Shashank, K. V. Rao, Miao Jin, et al.. (2015). Ultra-low contact resistivity with highly doped Si:P contact for nMOSFET. T118–T119. 30 indexed citations
7.
Beneyton, R., et al.. (2013). Macroscopic and nanometer scale stress measurement of Ni(Pt)Si silicide: Impact of thermal treatments ranging from millisecond to several hours. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 32(1). 3 indexed citations
8.
Beneyton, R., et al.. (2010). Formation of titanium silicide by Millisecond Anneal. 80–85. 1 indexed citations
9.
Ortolland, C., Erik Rosseel, Naoto Horiguchi, et al.. (2009). Silicide yield improvement with NiPtSi formation by laser anneal for advanced low power platform CMOS technology. 56. 1–4. 23 indexed citations
10.
Janssens, Tom, et al.. (2006). Ultra shallow junctions formed by sub-melt laser annealing. 87–91. 2 indexed citations
11.
Felch, Susan B., et al.. (2005). Optimization of pre-amorphization and dopant implant conditions for advanced annealing. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 237(1-2). 35–40. 8 indexed citations
12.
13.
Vogelgesang, Ralf, A. J. Mayur, Eunsoon Oh, et al.. (1996). Raman and Infrared Spectroscopy of Optical Phonons in II-VI Alloys, Epilayers and Superlattices. Journal of Raman Spectroscopy. 27(3-4). 239–247. 17 indexed citations
14.
Mayur, A. J., et al.. (1996). Host-isotope fine structure of local and gap modes of substitutional impurities in zinc-blende and wurtzite II-VI semiconductors. Physical review. B, Condensed matter. 53(19). 12878–12883. 17 indexed citations
15.
Itoh, Kohei M., J. Muto, W. Walukiewicz, et al.. (1996). Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium. Physical review. B, Condensed matter. 53(12). 7797–7804. 5 indexed citations
16.
Mayur, A. J., et al.. (1995). Local vibrational modes of substitutionalMg2+,Ca2+, andS2−in zinc-blende and wurtzite II-VI semiconductors. Physical review. B, Condensed matter. 51(11). 6971–6978. 21 indexed citations
17.
Itoh, Katsuhiro, W. Walukiewicz, J. W. Beeman, et al.. (1995). Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As. Materials science forum. 196-201. 127–132. 1 indexed citations
18.
Mayur, A. J., M. K. Udo, A. K. Ramdas, et al.. (1994). Fine structure of the asymmetric stretching vibration of dispersed oxygen in monoisotopic germanium. Physical review. B, Condensed matter. 49(23). 16293–16299. 31 indexed citations
19.
Oh, Eunsoon, et al.. (1993). Optical properties of Mg-based II-VI ternaries and quaternaries:Cd1−xMgxTe andCd1−x−yMgxMnyTe. Physical review. B, Condensed matter. 48(20). 15040–15046. 39 indexed citations
20.
Udo, M. K., Murielle Villeret, I. Miotkowski, et al.. (1992). Electronic excitations of substitutional transition-metal ions in II-VI semiconductors: CdTe:Fe2+and CdSe:Fe2+. Physical review. B, Condensed matter. 46(12). 7459–7468. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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