A. J. Mayur

735 citations

38 papers · 505 indexed · h-index 14

Co-authors: A. K. Ramdas S. Rodríguez I. Miotkowski Eunsoon Oh M. K. Udo C. Parks Naoto Horiguchi K. De Meyer
Topics: Semiconductor materials and devices (16 papers)Semiconductor materials and interfaces (14 papers)Silicon and Solar Cell Technologies (11 papers)
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Materials Chemistry
Journals: Physical review. B, Condensed matter Solid State Communications IEEE Electron Device Letters
Partner nations: United States Belgium Austria

In The Last Decade

A. J. Mayur

37 papers receiving 477 citations

Peers

Countries citing papers authored by A. J. Mayur

Since Specialization

Citations

This map shows the geographic impact of A. J. Mayur's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. J. Mayur with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. J. Mayur more than expected).

Fields of papers citing papers by A. J. Mayur

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. J. Mayur. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. J. Mayur. The network helps show where A. J. Mayur may publish in the future.

Co-authorship network of co-authors of A. J. Mayur

This figure shows the co-authorship network connecting the top 25 collaborators of A. J. Mayur. A scholar is included among the top collaborators of A. J. Mayur based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. J. Mayur. A. J. Mayur is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Advanced Millisecond Annealing Approaches for High-k Metal Gate and Contact Scaling 2018 ·ECS Transactions ·Shashank Sharma,(unknown),(unknown),(unknown),(unknown),(unknown),H. Graoui,A. J. Mayur	1
2	Novel solutions to enable contact resistivity <1E-9 Ω-cm² for 5nm node and beyond 2018 ·Raymond Hung,Hua Chung,(unknown),(unknown),Miao Jin,(unknown),A. J. Mayur,(unknown),(unknown),(unknown),(unknown),(unknown),(unknown),Yong Mei Chen,(unknown),Yi‐Chiau Huang,Xuebin Li	3
3	Sub-10⁻⁹ Ω·cm² contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation 2017 ·(unknown),Marc Schaekers,Hao Yu,(unknown),Andriy Hikavyy,L. Daté,(unknown),(unknown),(unknown),(unknown),A. J. Mayur,(unknown),H. van Meer,Yu-Long Jiang,K. De Meyer,D. Mocuta,Naoto Horiguchi	27
4	Ultra-low (1.2×10⁻⁹ Ωcm²) p-Si<inf>0.55</inf>Ge<inf>0.45</inf> contact resistivity (ρ<inf>c</inf>) using nanosecond laser anneal for 7nm nodes and beyond 2017 ·C.-P. Chang,(unknown),(unknown),K. V. Rao,(unknown),Miao Jin,(unknown),Raymond Hung,Yi‐Chiau Huang,Hua Chung,A. J. Mayur,(unknown)	4
5	Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium 2016 ·IEEE Electron Device Letters ·Hao Yu,Marc Schaekers,T. Schram,(unknown),A. J. Mayur,Jérôme Mitard,Liesbeth Witters,Kathy Barla,Nadine Collaert,Naoto Horiguchi,Aaron Thean,K. De Meyer	27
6	Ultra-low contact resistivity with highly doped Si:P contact for nMOSFET 2015 ·(unknown),(unknown),Shashank Sharma,K. V. Rao,Miao Jin,(unknown),(unknown),B. Colombeau,(unknown),A. J. Mayur,Hua Chung,(unknown),Adam Brand	30
7	Macroscopic and nanometer scale stress measurement of Ni(Pt)Si silicide: Impact of thermal treatments ranging from millisecond to several hours 2013 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·(unknown),R. Beneyton,M. Grégoire,Alexandre Pofelski,L. Clément,(unknown),A. J. Mayur	3
8	Formation of titanium silicide by Millisecond Anneal 2010 ·R. Beneyton,P. Morin,(unknown),(unknown),A. J. Mayur,C. Richard	1
9	Silicide yield improvement with NiPtSi formation by laser anneal for advanced low power platform CMOS technology 2009 ·C. Ortolland,Erik Rosseel,Naoto Horiguchi,C. Kerner,S. Mertens,J. A. Kittl,Eveline Verleysen,H. Bender,(unknown),A. Lauwers,P. Absil,S. Biesemans,(unknown),(unknown),A. J. Mayur,R.J. Schreutelkamp,Thomas Hoffmann	23
10	Ultra shallow junctions formed by sub-melt laser annealing 2006 ·(unknown),Tom Janssens,S. Severi,Wilfried Vandervorst,Susan B. Felch,(unknown),A. J. Mayur	2
11	Optimization of pre-amorphization and dopant implant conditions for advanced annealing 2005 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Susan B. Felch,H. Graoui,(unknown),A. J. Mayur	8
12	Exploring the limits of pre-amorphization implants on controlling channeling and diffusion of low energy B implants and ultra shallow junction formation 2003 ·A. Al-Bayati,S. N. Tandon,A. J. Mayur,M.A. Foad,(unknown),R.W. Murto,David C. Sing,(unknown),(unknown)	3
13	Raman and Infrared Spectroscopy of Optical Phonons in II-VI Alloys, Epilayers and Superlattices 1996 ·Journal of Raman Spectroscopy ·Ralf Vogelgesang,A. J. Mayur,(unknown),Eunsoon Oh,I. Miotkowski,A. K. Ramdas,S. Rodríguez,G. Bauer	17
14	Host-isotope fine structure of local and gap modes of substitutional impurities in zinc-blende and wurtzite II-VI semiconductors 1996 ·Physical review. B, Condensed matter ·(unknown),A. J. Mayur,Hyunjung Kim,I. Miotkowski,A. K. Ramdas,S. Rodríguez	17
15	Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium 1996 ·Physical review. B, Condensed matter ·Kohei M. Itoh,J. Muto,W. Walukiewicz,Jeffrey W. Beeman,E. E. Häller,Hyun‐Jung Kim,A. J. Mayur,(unknown),A. K. Ramdas,R. Buczko,J. W. Farmer,V. I. Ozhogin	5
16	Local vibrational modes of substitutionalMg2+,Ca2+, andS2−in zinc-blende and wurtzite II-VI semiconductors 1995 ·Physical review. B, Condensed matter ·(unknown),A. J. Mayur,Naechul Shin,I. Miotkowski,A. K. Ramdas,S. Rodríguez	21
17	Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As 1995 ·Materials science forum ·Katsuhiro Itoh,W. Walukiewicz,J. W. Beeman,Eugene E. Haller,Hyun Jung Kim,A. J. Mayur,(unknown),A. K. Ramdas,R. Buczko,J. W. Farmer,V. I. Ozhogin	1
18	Fine structure of the asymmetric stretching vibration of dispersed oxygen in monoisotopic germanium 1994 ·Physical review. B, Condensed matter ·A. J. Mayur,(unknown),M. K. Udo,A. K. Ramdas,Kohei M. Itoh,J. A. Wolk,E. E. Haller	31
19	Optical properties of Mg-based II-VI ternaries and quaternaries:Cd1−xMgxTe andCd1−x−yMgxMnyTe 1993 ·Physical review. B, Condensed matter ·Eunsoon Oh,C. Parks,I. Miotkowski,(unknown),A. J. Mayur,A. K. Ramdas	39
20	Electronic excitations of substitutional transition-metal ions in II-VI semiconductors: CdTe:Fe2+and CdSe:Fe2+ 1992 ·Physical review. B, Condensed matter ·M. K. Udo,Murielle Villeret,I. Miotkowski,A. J. Mayur,A. K. Ramdas,S. Rodríguez	29

About A. J. Mayur

A. J. Mayur is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 38 papers that have together received 505 indexed citations. Recurring topics across this work include Semiconductor materials and devices (16 papers), Semiconductor materials and interfaces (14 papers) and Silicon and Solar Cell Technologies (11 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (280 citations), Electrical and Electronic Engineering (415 citations) and Materials Chemistry (162 citations). A. J. Mayur has collaborated with scholars based in United States, Belgium and Austria. Frequent co-authors include A. K. Ramdas, S. Rodríguez, I. Miotkowski, Eunsoon Oh, A. K. Ramdas, M. K. Udo, C. Parks, Naoto Horiguchi, K. De Meyer and Marc Schaekers. Their work appears in journals such as Physical review. B, Condensed matter, Solid State Communications and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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