A. Wei

1.4k citations

40 papers · 917 indexed · h-index 12

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Effects in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Electrostatic Discharge in Electronics
- Silicon Carbide Semiconductor Technologies
- Low-power high-performance VLSI design
Hardware and Architecture top 10%

Papers in ⓘ

Electrical and Electronic Engineering 36
- Semiconductor materials and devices 33
- Advancements in Semiconductor Devices and Circuit Design 31
- Silicon Carbide Semiconductor Technologies 11
- Integrated Circuits and Semiconductor Failure Analysis 8
- Silicon and Solar Cell Technologies 5
- Radiation Effects in Electronics 4
- Electrostatic Discharge in Electronics 2
Biomedical Engineering 3

Co-authors: S.L. Kosier (10 shared papers)Ronald D. Schrimpf (10 shared papers)W.E. Combs (7 shared papers)Daniel M. Fleetwood (5 shared papers)M. DeLaus (7 shared papers)D.A. Antoniadis (10 shared papers)R.L. Pease (4 shared papers)R.N. Nowlin (2 shared papers)
Journals: IEEE Electron Device Letters (4 papers)IEEE Transactions on Nuclear Science (3 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Letters (1 paper)Solid-State Electronics (1 paper)
Partner nations: United States Germany Canada

In The Last Decade

A. Wei

35 papers receiving 844 citations

Peers

Countries citing papers authored by A. Wei

Since Specialization

Citations

This map shows the geographic impact of A. Wei's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Wei with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Wei more than expected).

Fields of papers citing papers by A. Wei

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Wei. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Wei. The network helps show where A. Wei may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Wei, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Wei Line = papers co-authored together A. Wei links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 40 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates IEEE Transactions on Nuclear Science ·Daniel M. Fleetwood, S.L. Kosier, R.N. Nowlin, Ronald D. Schrimpf, R.A. Reber, M. DeLaus, P.S. Winokur, A. Wei, W.E. Combs, R.L. Pease	1994	228
2	Charge separation for bipolar transistors IEEE Transactions on Nuclear Science ·S.L. Kosier, Ronald D. Schrimpf, R.N. Nowlin, Daniel M. Fleetwood, M. DeLaus, R.L. Pease, W.E. Combs, A. Wei, F. Chai	1993	167
3	Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs IEEE Transactions on Electron Devices ·S.L. Kosier, A. Wei, Ronald D. Schrimpf, Daniel M. Fleetwood, M. DeLaus, R.L. Pease, W.E. Combs	1995	96
4	Bounding the total-dose response of modern bipolar transistors IEEE Transactions on Nuclear Science ·S.L. Kosier, W.E. Combs, A. Wei, Ronald D. Schrimpf, Daniel M. Fleetwood, M. DeLaus, R.L. Pease	1994	69
5	Effect of floating-body charge on SOI MOSFET design IEEE Transactions on Electron Devices ·A. Wei, M. Sherony, D.A. Antoniadis	1998	47
6	Minimizing floating-body-induced threshold voltage variation in partially depleted SOI CMOS IEEE Electron Device Letters ·A. Wei, D.A. Antoniadis, Lawrence A. Bair	1996	44
7	Dose-rate effects on radiation-induced bipolar junction transistor gain degradation Applied Physics Letters ·A. Wei, S.L. Kosier, Ronald D. Schrimpf, Daniel M. Fleetwood, W.E. Combs	1994	42
8	Transient behavior of the kink effect in partially-depleted SOI MOSFET's IEEE Electron Device Letters ·A. Wei, M. Sherony, D.A. Antoniadis	1995	40
9	Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJT's IEEE Transactions on Electron Devices ·A. Wei, S.L. Kosier, Ronald D. Schrimpf, W.E. Combs, M. DeLaus	1995	32
10	Measurement of transient effects in SOI DRAM/SRAM access transistors IEEE Electron Device Letters ·A. Wei, D.A. Antoniadis	1996	28
11	Multiple Stress Memorization In Advanced SOI CMOS Technologies A. Wei, Maciej Wiatr, A. Mowry, A. U. Gehring, Roman Boschke, C. Scott, Jan Hoentschel, Stefan Duenkel, M. Gerhardt, Thomas Feudel, M. Lenski, Frank Wirbeleit, R. Otterbach, Roger J. Callahan, Gordon Koerner, N. Krumm, D. Greenlaw, M. Raab, Μ. Horstmann	2007	24
12	Design methodology for minimizing hysteretic V/sub T/-variation in partially-depleted SOI CMOS A. Wei, D.A. Antoniadis	2002	13
13	SOI Devices and Technology European Solid-State Device Research Conference ·D.A. Antoniadis, A. Wei, Anthony Lochtefeld	1999	11
14	Scaled Gate Stacks for Sub-20-nm CMOS Logic Applications Through Integration of Thermal IL and ALD HfOx IEEE Electron Device Letters ·K. Joshi, Shih‐Ya Hung, Subhadeep Mukhopadhyay, Tsutomu Sato, M. J. Bevan, Bijesh Rajamohanan, A. Wei, A. Noori, Brendan McDougall, Chi‐Nung Ni, C. Lazik, Ghazal Saheli, P. Liu, Dachen Chu, L. Daté, Suman Datta, Adam Brand, J. Swenberg, Souvik Mahapatra	2012	9
15	Strained Silicon-On-Insulator - Fabrication and Characterization ECS Transactions ·Manfred Reiche, Cameliu Himcinschi, U. Gösele, Silke Christiansen, S. Mantl, Dan Buca, Qing‐Tai Zhao, S. Feste, Roger Loo, Ngoc Duy Nguyen, W. Buchholtz, A. Wei, Μ. Horstmann, D. Feijóo, P. Storck	2007	8
16	From the present to the future: Scaling of planar VLSI-CMOS devices towards 3D-FinFETs and beyond 10nm CMOS technologies; manufacturing challenges and future technology concepts Jan Hoentschel, A. Wei	2015	8
17	Gate length scaling trends of drive current enhancement in CMOSFETs with dual stress overlayers and embedded-SiGe Materials Science and Engineering B ·S. Flachowsky, A. Wei, T. Herrmann, R. Illgen, Μ. Horstmann, Ralf P. Richter, H. Salz, W. Klix, R. Stenzel	2008	5
18	Review on Process-Induced Strain Techniques for Advanced Logic Technologies Maciej Wiatr, T. Feudel, A. Wei, A. Mowry, Roman Boschke, P. Javorka, A. U. Gehring, T. Kammler, M. Lenski, K. Frohberg, Ralf P. Richter, Μ. Horstmann, D. Greenlaw	2007	5
19	Advanced SOI CMOS transistor technology for high performance microprocessors Solid-State Electronics ·Μ. Horstmann, Maciej Wiatr, A. Wei, Jan Hoentschel, T. Feudel, Th. Scheiper, R. Stephan, M. Gerhadt, Stephan Krugel, M. Raab	2009	5
20	Tradeoffs of current drive vs. short-channel effect in deep-submicrometer bulk and SOI MOSFETs L.T. Su, Hang Hu, J.B. Jacobs, M. Sherony, A. Wei, D.A. Antoniadis	2002	4

About A. Wei

A. Wei is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Mechanics of Materials, Materials Chemistry and Surgery, having authored 40 papers that have together received 917 indexed citations. Recurring topics across this work include Semiconductor materials and devices (33 papers), Advancements in Semiconductor Devices and Circuit Design (31 papers), Silicon Carbide Semiconductor Technologies (11 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers), Silicon and Solar Cell Technologies (5 papers), Radiation Effects in Electronics (4 papers), Electrostatic Discharge in Electronics (2 papers) and Metal and Thin Film Mechanics (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (906 citations), Hardware and Architecture (43 citations), Radiation (13 citations), Atomic and Molecular Physics, and Optics (37 citations) and Biomedical Engineering (43 citations). A. Wei has collaborated with scholars based in United States, Germany and Canada. Frequent co-authors include S.L. Kosier, Ronald D. Schrimpf, W.E. Combs, Daniel M. Fleetwood, M. DeLaus, D.A. Antoniadis, R.L. Pease, R.N. Nowlin, M. Sherony and R.A. Reber. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Nuclear Science, IEEE Transactions on Electron Devices, Applied Physics Letters and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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