S. M. Seutter

567 total citations
19 papers, 482 citations indexed

About

S. M. Seutter is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, S. M. Seutter has authored 19 papers receiving a total of 482 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in S. M. Seutter's work include Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and GaN-based semiconductor devices and materials (5 papers). S. M. Seutter is often cited by papers focused on Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (6 papers) and GaN-based semiconductor devices and materials (5 papers). S. M. Seutter collaborates with scholars based in United States, India and Hong Kong. S. M. Seutter's co-authors include S. Y. Tong, Lianxi Zheng, Mingyu Xie, Huasheng Wu, Donna A. Chen, Kevin F. McCarty, M. C. Bartelt, Souvik Mahapatra, Chris Olsen and J. Vasi and has published in prestigious journals such as Physical Review Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

S. M. Seutter

19 papers receiving 468 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. M. Seutter United States 11 248 247 232 122 118 19 482
Carlos Anthony Sanchez United States 10 193 0.8× 192 0.8× 95 0.4× 161 1.3× 69 0.6× 28 340
Akira Hirako Japan 11 271 1.1× 114 0.5× 170 0.7× 193 1.6× 80 0.7× 17 352
S. Hasenöhrl Slovakia 11 138 0.6× 238 1.0× 163 0.7× 84 0.7× 206 1.7× 82 412
Hiroki Imabayashi Japan 11 386 1.6× 137 0.6× 264 1.1× 233 1.9× 86 0.7× 30 455
J. Mimila‐Arroyo Mexico 11 79 0.3× 310 1.3× 240 1.0× 119 1.0× 154 1.3× 49 437
Kamran Forghani United States 15 279 1.1× 274 1.1× 202 0.9× 138 1.1× 228 1.9× 44 531
Tetsuya Taki Japan 7 320 1.3× 136 0.6× 168 0.7× 150 1.2× 166 1.4× 13 408
Shaoyan Yang China 11 243 1.0× 109 0.4× 186 0.8× 144 1.2× 55 0.5× 46 336
Nakao Akutsu Japan 12 471 1.9× 267 1.1× 179 0.8× 256 2.1× 168 1.4× 27 532
I. C. Robin France 14 152 0.6× 322 1.3× 317 1.4× 116 1.0× 233 2.0× 39 518

Countries citing papers authored by S. M. Seutter

Since Specialization
Citations

This map shows the geographic impact of S. M. Seutter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. M. Seutter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. M. Seutter more than expected).

Fields of papers citing papers by S. M. Seutter

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. M. Seutter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. M. Seutter. The network helps show where S. M. Seutter may publish in the future.

Co-authorship network of co-authors of S. M. Seutter

This figure shows the co-authorship network connecting the top 25 collaborators of S. M. Seutter. A scholar is included among the top collaborators of S. M. Seutter based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. M. Seutter. S. M. Seutter is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Kapur, Pawan, Masoud Moslehi, J. Kramer, et al.. (2013). A Manufacturable, Non-Plated, Non-Ag Metallization Based 20.44% Efficient, 243cm2 Area, Back Contacted Solar Cell on 40um Thick Mono-Crystalline Silicon. EU PVSEC. 2228–2231. 11 indexed citations
2.
Ganguly, Udayan, Chris Olsen, S. M. Seutter, et al.. (2010). Study of P/E Cycling Endurance Induced Degradation in SANOS Memories Under NAND (FN/FN) Operation. IEEE Transactions on Electron Devices. 57(7). 1548–1558. 5 indexed citations
3.
Ganguly, Udayan, Chris Olsen, S. M. Seutter, et al.. (2009). Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler–Nordheim Tunneling Program/Erase Operation. IEEE Electron Device Letters. 30(2). 171–173. 26 indexed citations
4.
Ganguly, Udayan, Chris Olsen, S. M. Seutter, et al.. (2009). Influence of SiN composition on program and erase characteristics of SANOS-type flash memories. 25. 1–4. 1 indexed citations
5.
Ganguly, Udayan, Chris Olsen, S. M. Seutter, et al.. (2009). Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under nand (FN/FN) Operation. IEEE Transactions on Electron Devices. 56(12). 3123–3132. 23 indexed citations
6.
Ganguly, Udayan, Chris Olsen, S. M. Seutter, et al.. (2008). The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flash. 1–7. 10 indexed citations
7.
Seutter, S. M., et al.. (2008). A novel CVD-SiBCN Low-K spacer technology for high-speed applications. 108–109. 22 indexed citations
8.
Ganguly, Udayan, Chris Olsen, S. M. Seutter, et al.. (2008). Nitride engineering and the effect of interfaces on Charge Trap Flash performance and reliability. DSpace (IIT Bombay). 406–411. 19 indexed citations
9.
Smith, Jacob, S. M. Seutter, & Rajiv Iyer. (2005). Pattern-dependent microloading and step coverage of silicon nitride thin films deposited in a single-wafer thermal chemical vapor deposition chamber. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 23(6). 2340–2346. 5 indexed citations
10.
Smith, Jacob, et al.. (2005). Thermal Chemical Vapor Deposition of Bis(Tertiary-Butylamino)Silane-based Silicon Nitride Thin Films. Journal of The Electrochemical Society. 152(4). G316–G316. 6 indexed citations
11.
Chen, Donna A., M. C. Bartelt, S. M. Seutter, & Kevin F. McCarty. (2000). Small, uniform, and thermally stable silver particles on TiO2(110)-(1×1). Surface Science. 464(1). L708–L714. 63 indexed citations
12.
Seutter, S. M., et al.. (2000). Reflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxy. Surface Science. 445(2-3). L71–L75. 33 indexed citations
13.
Xie, Mingyu, et al.. (2000). Surface Morphology of GaN: Flat versus Vicinal Surfaces. MRS Internet Journal of Nitride Semiconductor Research. 5(S1). 174–180. 4 indexed citations
14.
Zheng, Lianxi, Mingyuan Xie, S. M. Seutter, Sin Hang Cheung, & S. Y. Tong. (2000). Observation of “Ghost” Islands and Surfactant Effect of Surface Gallium Atoms during GaN Growth by Molecular Beam Epitaxy. Physical Review Letters. 85(11). 2352–2355. 26 indexed citations
15.
Held, R., G. Nowak, S. M. Seutter, et al.. (1999). Structure and composition of GaN(0001) A and B surfaces. Journal of Applied Physics. 85(11). 7697–7704. 56 indexed citations
16.
Xie, Mingyu, et al.. (1999). Anisotropic Step-Flow Growth and Island Growth of GaN(0001) by Molecular Beam Epitaxy. Physical Review Letters. 82(13). 2749–2752. 163 indexed citations
17.
Dabiran, A. M., S. M. Seutter, S. Stoyanov, et al.. (1999). Step edge barriers versus step edge relaxation in GaAs:Sn molecular beam epitaxy. Surface Science. 438(1-3). 131–141. 3 indexed citations
18.
Dabiran, A. M., S. M. Seutter, & P. I. Cohen. (1998). Direct Observations of the Strain-Limited Island Growth of Sn-Doped GaAs(100). Surface Review and Letters. 5(03n04). 783–795. 3 indexed citations
19.
Seutter, S. M., A. M. Dabiran, P. I. Cohen, et al.. (1997). Nucleation, growth and magnetic properties of epitaxial FeAl films on AlAs/GaAs. Surface Science. 380(1). 75–82. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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