M. de Potter

720 total citations
51 papers, 542 citations indexed

About

M. de Potter is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. de Potter has authored 51 papers receiving a total of 542 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 33 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in M. de Potter's work include Semiconductor materials and interfaces (27 papers), Silicon and Solar Cell Technologies (22 papers) and Semiconductor materials and devices (15 papers). M. de Potter is often cited by papers focused on Semiconductor materials and interfaces (27 papers), Silicon and Solar Cell Technologies (22 papers) and Semiconductor materials and devices (15 papers). M. de Potter collaborates with scholars based in Belgium, United States and Netherlands. M. de Potter's co-authors include Karen Maex, A. Lauwers, G. Langouche, Richard Lindsay, O. Chamirian, M. Van Rossum, C. Vrancken, J. A. Kittl, Mark van Dal and Paul R. Besser and has published in prestigious journals such as Physical Review Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

M. de Potter

48 papers receiving 502 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. de Potter Belgium 13 441 392 100 57 50 51 542
S. Yamazaki Japan 16 661 1.5× 164 0.4× 185 1.9× 29 0.5× 49 1.0× 68 793
J. Klatt United States 12 403 0.9× 293 0.7× 181 1.8× 99 1.7× 53 1.1× 30 511
L. K. Vodop’yanov Russia 11 371 0.8× 283 0.7× 206 2.1× 23 0.4× 41 0.8× 43 476
В. И. Зубков Russia 11 218 0.5× 242 0.6× 122 1.2× 20 0.4× 58 1.2× 72 339
W. Nijman Netherlands 8 245 0.6× 246 0.6× 100 1.0× 26 0.5× 30 0.6× 12 347
Kenichi Ohtsuka Japan 11 292 0.7× 146 0.4× 177 1.8× 25 0.4× 22 0.4× 37 383
John R. Troxell United States 7 493 1.1× 345 0.9× 197 2.0× 71 1.2× 30 0.6× 16 569
J. S. Park United States 7 336 0.8× 292 0.7× 159 1.6× 47 0.8× 60 1.2× 9 451
Л. И. Федина Russia 11 299 0.7× 216 0.6× 214 2.1× 72 1.3× 76 1.5× 61 436
D. Bahnck United States 10 309 0.7× 213 0.5× 128 1.3× 64 1.1× 67 1.3× 21 423

Countries citing papers authored by M. de Potter

Since Specialization
Citations

This map shows the geographic impact of M. de Potter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. de Potter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. de Potter more than expected).

Fields of papers citing papers by M. de Potter

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. de Potter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. de Potter. The network helps show where M. de Potter may publish in the future.

Co-authorship network of co-authors of M. de Potter

This figure shows the co-authorship network connecting the top 25 collaborators of M. de Potter. A scholar is included among the top collaborators of M. de Potter based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. de Potter. M. de Potter is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Wenderoth, M., et al.. (2012). Spectroscopy of positively and negatively buckled domains on Si(111)-2×1. Physical Review B. 86(8). 6 indexed citations
3.
Jakschik, S., Thomas Hoffmann, A. Veloso, et al.. (2007). A 50nm high-k poly silicon gate stack with a buried SiGe channel. 1–2. 1 indexed citations
4.
Dal, M.J.H. van, D. Jawarani, J. G. M. van Berkum, et al.. (2004). The relation between phase transformation and onset of thermal degradation in nanoscale CoSi2-polycrystalline silicon structures. Journal of Applied Physics. 96(12). 7568–7573. 8 indexed citations
5.
Lauwers, A., J. A. Kittl, Mark van Dal, et al.. (2004). Low temperature spike anneal for Ni-silicide formation. Microelectronic Engineering. 76(1-4). 303–310. 16 indexed citations
6.
Lauwers, A., M. de Potter, O. Chamirian, et al.. (2002). Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide. Microelectronic Engineering. 64(1-4). 131–142. 47 indexed citations
7.
Chamirian, O., An Steegen, H. Bender, et al.. (2002). Study of CoSi2 formation from a Co–Ni alloy. Microelectronic Engineering. 60(1-2). 221–230. 10 indexed citations
8.
Kondoh, Eiichi, T. Conard, Bert Brijs, et al.. (1999). A chemical role of refractory metal caps in Co silicidation: Evidence of SiO2 reduction by Ti cap. Journal of materials research/Pratt's guide to venture capital sources. 14(11). 4402–4408. 4 indexed citations
9.
Maex, Karen, A. Lauwers, Paul R. Besser, et al.. (1999). Self-aligned CoSi/sub 2/ for 0.18 μm and below. IEEE Transactions on Electron Devices. 46(7). 1545–1550. 41 indexed citations
10.
Frigeri, C., J.L. Weyher, & M. de Potter. (1991). TEM study of the origin of the surface microroughness in DSL photoetched Si-implanted GaAs wafers. Applied Surface Science. 50(1-4). 115–118. 5 indexed citations
11.
Sark, Wilfried van, J.L. Weyher, L.J. Giling, M. de Potter, & M. Van Rossum. (1990). Characterization of GaAs solar cells made by ion implantation and rapid thermal annealing using selective photoetching. Journal of materials research/Pratt's guide to venture capital sources. 5(5). 1042–1051. 2 indexed citations
12.
Potter, M. de, W. De Raedt, M. Van Hove, et al.. (1989). Characterization of the TiW-GaAs interface after rapid thermal annealing. Journal of Applied Physics. 66(10). 4775–4779. 3 indexed citations
13.
Potter, M. de & G. Langouche. (1983). Mössbauer study of the amorphization process in ion-implanted diamond. Hyperfine Interactions. 15(1-4). 479–482. 2 indexed citations
14.
Potter, M. de & G. Langouche. (1983). Mössbauer study of the amorphization process in diamond. Zeitschrift für Physik B Condensed Matter. 53(2). 89–93. 8 indexed citations
15.
Potter, M. de & G. Langouche. (1983). Mössbauer study of the lattice location of 57Co implanted in graphite. Physics Letters A. 97(9). 404–408. 6 indexed citations
16.
Langouche, G., M. de Potter, I. Dézsi, & M. Van Rossum. (1982). Mössbauer study of the microscopic surrounding of co atoms implanted in si and ge below the full amorphization limit. Radiation Effects. 67(4). 101–106. 15 indexed citations
17.
Dézsi, I., R. Coussement, G. Langouche, et al.. (1980). ON THE LOCALIZATION OF Co ATOMS IN SILICON. Springer Link (Chiba Institute of Technology). 1 indexed citations
18.
Langouche, G., M. de Potter, J. Bruyn, et al.. (1980). Laser annealing of 57Co sources implanted in Si and Ge. Journal de physique. 41. 421–422. 2 indexed citations
19.
Rossum, M. Van, G. Langouche, J. Bruyn, M. de Potter, & R. Coussement. (1980). The study of defects in type-IV semiconductors by Mössbauer spectroscopy. Revue de Physique Appliquée. 15(2). 311–322. 4 indexed citations
20.
Bruyn, J., G. Langouche, M. Van Rossum, M. de Potter, & R. Coussement. (1979). Laser and thermal annealing of Te-implanted silicon. Physics Letters A. 73(4). 356–358. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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