M. Meuris

696 total citations
35 papers, 589 citations indexed

About

M. Meuris is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Meuris has authored 35 papers receiving a total of 589 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in M. Meuris's work include Semiconductor materials and devices (20 papers), Semiconductor materials and interfaces (8 papers) and Silicon and Solar Cell Technologies (7 papers). M. Meuris is often cited by papers focused on Semiconductor materials and devices (20 papers), Semiconductor materials and interfaces (8 papers) and Silicon and Solar Cell Technologies (7 papers). M. Meuris collaborates with scholars based in Belgium, United States and Netherlands. M. Meuris's co-authors include Marc Heyns, Wilfried Vandervorst, Matty Caymax, Michel Houssa, Peter De Bisschop, J. A. Jackman, G. Pourtois, Eddy Simoen, Trudo Clarysse and A. Benedetti and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

M. Meuris

32 papers receiving 561 citations

Peers

M. Meuris

EEE

AMPO

F. Zignani Italy

J. C. C. Tsai United States

Y. J. van der Meulen United States

Teimuraz Mchedlidze Germany

M. D. Strathman United States

W. Vandervorst Belgium

Akira Obara Japan

Yukinori Kurogi Japan

L. Zhang United Kingdom

A. Grob France

F. Zignani Italy

M. Meuris

439 ×0.8

EEE

104 ×0.5

AMPO

228 ×1.2

139 ×0.9

79 ×0.9

Citations per year, relative to M. Meuris M. Meuris (= 1×) peers F. Zignani

Countries citing papers authored by M. Meuris

Since Specialization

Citations

This map shows the geographic impact of M. Meuris's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Meuris with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Meuris more than expected).

Fields of papers citing papers by M. Meuris

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Meuris. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Meuris. The network helps show where M. Meuris may publish in the future.

Co-authorship network of co-authors of M. Meuris

This figure shows the co-authorship network connecting the top 25 collaborators of M. Meuris. A scholar is included among the top collaborators of M. Meuris based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Meuris. M. Meuris is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Leys, Maarten, Ngoc Duy Nguyen, Roger Loo, et al.. (2010). Selective Area Growth of InP in Shallow-Trench-Isolated Structures on Off-Axis Si(001) Substrates. Journal of The Electrochemical Society. 157(11). H1023–H1023. 26 indexed citations

Afanas’ev, V. V., Michel Houssa, A. Stesmans, et al.. (2009). Electronic properties of Ge dangling bond centers at Si1−xGex/SiO2 interfaces. Applied Physics Letters. 95(22). 14 indexed citations

Eneman, Geert, Brice De Jaeger, Eddy Simoen, et al.. (2009). Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology. IEEE Transactions on Electron Devices. 56(12). 3115–3122. 18 indexed citations

Clarysse, Trudo, Guy Brammertz, Danielle Vanhaeren, et al.. (2008). Accurate carrier profiling of n-type GaAs junctions. Materials Science in Semiconductor Processing. 11(5-6). 259–266. 5 indexed citations

Delabie, Annelies, Florence Bellenger, Michel Houssa, et al.. (2007). High-k gate dielectrics on Ge(100) - effective electrical passivation using germanium oxide.

Hellin, David, Jens Rip, Daniël Nelis, et al.. (2006). How Trace Analytical Techniques Contribute to the Research and Development of Ge and III/V Semiconductor Devices. ECS Transactions. 3(7). 173–181. 4 indexed citations

Elshocht, Sven Van, An Hardy, Stefan De Gendt, et al.. (2006). Alternative Gate Dielectric Materials. ECS Transactions. 3(3). 479–497. 2 indexed citations

Moussa, Alain, Frederik Leys, Benny Van Daele, et al.. (2006). In Situ Phosphorus Doping of Germanium by APCVD. ECS Transactions. 3(7). 599–609. 26 indexed citations

Heyns, Marc, M. Meuris, & Matty Caymax. (2006). Ge and III/V as Enabling Materials for Future CMOS Technologies. ECS Transactions. 3(7). 511–518. 18 indexed citations

10.

Simoen, Eddy, A. Satta, Trudo Clarysse, et al.. (2006). Ion-implantation issues in the formation of shallow junctions in germanium. Materials Science in Semiconductor Processing. 9(4-5). 634–639. 96 indexed citations

11.

Satta, A., Tom Janssens, Trudo Clarysse, et al.. (2005). P implantation on doping of Ge: diffusion, activation, re-crystallization. 2 indexed citations

12.

Leys, Frederik, Roger Loo, Olivier Richard, et al.. (2005). Growth kinetics and relaxation mechanism of very thin epitaxial Si films on (100) germanium. 1 indexed citations

13.

Meuris, M., et al.. (2002). Optimized in situ rinsing for HF last processes. 96. P95–P98.

14.

Gendt, Stefan De, Preston T. Snee, Marcel Lux, et al.. (1998). A Novel Resist and Post-Etch Residue Removal Process Using Ozonated Chemistry. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 65-66. 165–168. 21 indexed citations

15.

Teerlinck, Ivo, Paul Mertens, Rita Vos, M. Meuris, & Marc Heyns. (1996). Optimized HF solutions in ULSI technology. 250–263. 2 indexed citations

16.

Teerlinck, Ivo, P. Mertens, H. Schmidt, M. Meuris, & Marc Heyns. (1996). Impact of the Electrochemical Properties of Silicon Wafer Surfaces on Copper Outplating from HF Solutions. Journal of The Electrochemical Society. 143(10). 3323–3327. 31 indexed citations

17.

Meuris, M., Wilfried Vandervorst, & J. A. Jackman. (1991). On the effect of an oxygen beam in sputter depth profiling. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 9(3). 1482–1488. 41 indexed citations

18.

Meuris, M., et al.. (1990). Migration of Si in molecular-beam epitaxial growth of δ-doped GaAs and Al0.25Ga0.75As. Journal of Applied Physics. 68(7). 3766–3768. 17 indexed citations

19.

Potter, M. de, W. De Raedt, M. Van Hove, et al.. (1989). Characterization of the TiW-GaAs interface after rapid thermal annealing. Journal of Applied Physics. 66(10). 4775–4779. 3 indexed citations

20.

Meuris, M., et al.. (1989). Determination of the angle of incidence in a Cameca IMS‐4f SIMS instrument. Surface and Interface Analysis. 14(11). 739–743. 44 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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