Daniel M. Fleetwood

25.2k total citations · 2 hit papers
606 papers, 20.2k citations indexed

About

Daniel M. Fleetwood is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Daniel M. Fleetwood has authored 606 papers receiving a total of 20.2k indexed citations (citations by other indexed papers that have themselves been cited), including 577 papers in Electrical and Electronic Engineering, 106 papers in Materials Chemistry and 68 papers in Condensed Matter Physics. Recurrent topics in Daniel M. Fleetwood's work include Semiconductor materials and devices (504 papers), Advancements in Semiconductor Devices and Circuit Design (288 papers) and Radiation Effects in Electronics (224 papers). Daniel M. Fleetwood is often cited by papers focused on Semiconductor materials and devices (504 papers), Advancements in Semiconductor Devices and Circuit Design (288 papers) and Radiation Effects in Electronics (224 papers). Daniel M. Fleetwood collaborates with scholars based in United States, France and Belgium. Daniel M. Fleetwood's co-authors include Ronald D. Schrimpf, P.S. Winokur, J.R. Schwank, M.R. Shaneyfelt, Sokrates T. Pantelides, En Xia Zhang, R.L. Pease, T.L. Meisenheimer, L.C. Riewe and John H. Scofield and has published in prestigious journals such as Nature, Physical Review Letters and Physical review. B, Condensed matter.

In The Last Decade

Daniel M. Fleetwood

593 papers receiving 19.2k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Radiation Effects in MOS Oxides

2008 651 citations Daniel M. Fleetwood et al. IEEE Transactions on Nuclear Science profile →
Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices

1993 393 citations Daniel M. Fleetwood et al. profile →

Peers

Countries citing papers authored by Daniel M. Fleetwood

Since Specialization

Citations

This map shows the geographic impact of Daniel M. Fleetwood's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Daniel M. Fleetwood with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Daniel M. Fleetwood more than expected).

Fields of papers citing papers by Daniel M. Fleetwood

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Daniel M. Fleetwood. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Daniel M. Fleetwood. The network helps show where Daniel M. Fleetwood may publish in the future.

Co-authorship network of co-authors of Daniel M. Fleetwood

This figure shows the co-authorship network connecting the top 25 collaborators of Daniel M. Fleetwood. A scholar is included among the top collaborators of Daniel M. Fleetwood based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Daniel M. Fleetwood. Daniel M. Fleetwood is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers 2024 ·Electronics ·(unknown), (unknown), J. Lee, Moon-Kyu Cho, Daniel M. Fleetwood, John D. Cressler, Ickhyun Song	0
2	Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design 2024 ·Applied Physics Letters ·(unknown), (unknown), (unknown), Michael W. McCurdy, Travis J. Anderson, Alan G. Jacobs, Robert Kaplar, Dennis R. Ball, En Xia Zhang, Sokrates T. Pantelides, Robert A. Reed, Mona A. Ebrish, Daniel M. Fleetwood, Joshua D. Caldwell, Ronald D. Schrimpf	8
3	Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide 2024 ·IEEE Transactions on Nuclear Science ·(unknown), En Xia Zhang, Robert A. Reed, Ronald D. Schrimpf, A. Arreghini, João P. A. Bastos, G. Van den bosch, (unknown), Daniel M. Fleetwood	1
4	Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs 2023 ·IEEE Transactions on Nuclear Science ·Stefano Bonaldo, (unknown), Hugh Barnaby, G. Borghello, (unknown), F. Faccio, Daniel M. Fleetwood, S. Mattiazzo, Marta Bagatin, A. Paccagnella, Simone Gerardin	7
5	A Confidence-Based Approach to Include Survivors in a Probabilistic TID Failure Assessment 2023 ·IEEE Transactions on Nuclear Science ·(unknown), Brian D. Sierawski, Raymond L. Ladbury, Michael J. Campola, Daniel M. Fleetwood	2
6	Total-Ionizing-Dose Effects and Low-Frequency Noise in N-Type Carbon Nanotube Field-Effect Transistors With HfO₂ Gate Dielectrics 2023 ·IEEE Transactions on Nuclear Science ·(unknown), (unknown), En Xia Zhang, B. L. Bhuva, (unknown), J. L. Davidson, Michael L. Alles, Daniel M. Fleetwood, L. W. Massengill	5
7	Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors 2023 ·IEEE Transactions on Electron Devices ·(unknown), En Xia Zhang, (unknown), K. Li, Pengfei Wang, Jingchen Cao, (unknown), Ronald D. Schrimpf, Robert A. Reed, Brian D. Sierawski, Michael L. Alles, Jonathan A. Cox, Steven L. Moran, Subramanian S. Iyer, Daniel M. Fleetwood	3
8	Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Toward Radiation-Tolerant Embedded Nonvolatile Memory 2023 ·IEEE Electron Device Letters ·(unknown), (unknown), (unknown), (unknown), (unknown), Halid Mulaosmanovic, (unknown), (unknown), Sven Beyer, Xiao Gong, Santosh Kurinec, Vijaykrishnan Narayanan, Hussam Amrouch, En Xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Kai Ni	1
9	Effects of Bias and Temperature on the Dose-Rate Sensitivity of 65-nm CMOS Transistors 2021 ·IEEE Transactions on Nuclear Science ·G. Borghello, F. Faccio, (unknown), Stefano Michelis, (unknown), (unknown), Daniel M. Fleetwood	13
10	Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si 2019 ·IEEE Transactions on Nuclear Science ·(unknown), Stefano Bonaldo, Pan Wang, Rong Jiang, Huiqi Gong, En Xia Zhang, Niamh Waldron, Bernardette Kunert, Jérôme Mitard, Nadine Collaert, Sonja Sioncke, Dimitri Linten, Ronald D. Schrimpf, Robert A. Reed, Simone Gerardin, A. Paccagnella, Daniel M. Fleetwood	19
11	Monte Carlo Simulation of Displacement Damage in Graphene 2019 ·IEEE Transactions on Nuclear Science ·Wenjun Liao, Michael L. Alles, En Xia Zhang, Daniel M. Fleetwood, Robert A. Reed, Robert A. Weller, Ronald D. Schrimpf	5
12	Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses 2019 ·IEEE Transactions on Nuclear Science ·Stefano Bonaldo, Simone Gerardin, Xiaoming Jin, A. Paccagnella, F. Faccio, G. Borghello, Daniel M. Fleetwood	36
13	Temperature-Switching During Irradiation as a Test for ELDRS in Linear Bipolar Devices 2018 ·IEEE Transactions on Nuclear Science ·Xiaolong Li, Wu Lu, Qi Guo, Daniel M. Fleetwood, Chengfa He, Xin Wang, Xin Yu, Jing Sun, Mohan Liu, Shuai Yao	14
14	Dose-Rate Dependence of the Total-Ionizing-Dose Response of GaN-Based HEMTs 2018 ·IEEE Transactions on Nuclear Science ·Rong Jiang, En Xia Zhang, (unknown), Pengfei Wang, Huiqi Gong, Dawei Yan, Ronald D. Schrimpf, Daniel M. Fleetwood	32
15	X-Ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices 2018 ·IEEE Transactions on Nuclear Science ·Pengfei Wang, En Xia Zhang, (unknown), Wenjun Liao, Huiqi Gong, Pan Wang, (unknown), Kai Ni, Michael W. McCurdy, Ingrid Verbauwhede, E. Bury, D. Linten, Daniel M. Fleetwood, Ronald D. Schrimpf, Robert A. Reed	13
16	Analysis of Temporal Masking Effects on Master- and Slave-Type Flip-Flop SEUs and Related Applications 2018 ·IEEE Transactions on Nuclear Science ·(unknown), N. N. Mahatme, (unknown), (unknown), En Xia Zhang, (unknown), Y. N. Liu, Balaji Narasimham, Arthur F. Witulski, B. L. Bhuva, Daniel M. Fleetwood	2
17	Influence of LDD Spacers and H⁺Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses 2017 ·IEEE Transactions on Nuclear Science ·F. Faccio, G. Borghello, (unknown), Daniel M. Fleetwood, Ronald D. Schrimpf, Huiqi Gong, En Xia Zhang, Pan Wang, Stefano Michelis, Simone Gerardin, A. Paccagnella, Stefano Bonaldo	82
18	Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric 2017 ·IEEE Transactions on Nuclear Science ·Maruf Bhuiyan, Hong Zhou, Sung‐Jae Chang, Xiabing Lou, Xian Gong, Rong Jiang, Huiqi Gong, En Xia Zhang, Chul‐Ho Won, Jong‐Won Lim, Jung‐Hee Lee, Roy G. Gordon, Robert A. Reed, Daniel M. Fleetwood, Peide D. Ye, Tso‐Ping Ma	16
19	Capacitance–Frequency Estimates of Border-Trap Densities in Multifin MOS Capacitors 2017 ·IEEE Transactions on Nuclear Science ·(unknown), Rong Jiang, En Xia Zhang, Wenjun Liao, (unknown), Daniel M. Fleetwood, Ronald D. Schrimpf, Robert A. Reed, Dimitri Linten, Jérôme Mitard, Nadine Collaert, Sonja Sioncke, Niamh Waldron	13
20	1990 IEEE Annual Conference on Nuclear and Space Radiation Effects, 27th, Reno, NV, July 16-20, 1990, Proceedings 1990 ·IEEE Transactions on Nuclear Science ·Daniel M. Fleetwood	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact