E. Bury

1.3k total citations
86 papers, 950 citations indexed

About

E. Bury is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, E. Bury has authored 86 papers receiving a total of 950 indexed citations (citations by other indexed papers that have themselves been cited), including 84 papers in Electrical and Electronic Engineering, 9 papers in Hardware and Architecture and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in E. Bury's work include Semiconductor materials and devices (74 papers), Advancements in Semiconductor Devices and Circuit Design (64 papers) and Integrated Circuits and Semiconductor Failure Analysis (37 papers). E. Bury is often cited by papers focused on Semiconductor materials and devices (74 papers), Advancements in Semiconductor Devices and Circuit Design (64 papers) and Integrated Circuits and Semiconductor Failure Analysis (37 papers). E. Bury collaborates with scholars based in Belgium, Austria and Russia. E. Bury's co-authors include B. Kaczer, G. Groeseneken, D. Linten, J. Franco, Adrian Chasin, R. Degraeve, R. Ritzenthaler, Pieter Weckx, Dimitri Linten and Stanislav Tyaginov and has published in prestigious journals such as Advanced Functional Materials, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices.

In The Last Decade

E. Bury

83 papers receiving 929 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. Bury Belgium 16 878 112 94 66 55 86 950
Dimitri Linten Belgium 20 1.4k 1.5× 108 1.0× 88 0.9× 68 1.0× 84 1.5× 154 1.4k
Paolo A. Gargini United States 11 346 0.4× 91 0.8× 64 0.7× 94 1.4× 52 0.9× 31 491
Harish M. Kittur India 11 498 0.6× 137 1.2× 91 1.0× 88 1.3× 165 3.0× 66 656
Srivatsa Srinivasa United States 13 434 0.5× 90 0.8× 117 1.2× 39 0.6× 42 0.8× 31 515
C. Kothandaraman United States 12 416 0.5× 90 0.8× 80 0.9× 97 1.5× 47 0.9× 28 460
Xiaoyong Xue China 15 587 0.7× 123 1.1× 154 1.6× 51 0.8× 47 0.9× 86 716
M. Kido Japan 7 763 0.9× 83 0.7× 104 1.1× 61 0.9× 54 1.0× 9 900
Stefan Cosemans Belgium 20 1.1k 1.2× 108 1.0× 94 1.0× 102 1.5× 89 1.6× 83 1.1k
Hyungcheol Shin South Korea 18 892 1.0× 44 0.4× 83 0.9× 91 1.4× 92 1.7× 92 1.0k
Chrong Jung Lin Taiwan 17 1.0k 1.1× 94 0.8× 99 1.1× 183 2.8× 49 0.9× 106 1.1k

Countries citing papers authored by E. Bury

Since Specialization
Citations

This map shows the geographic impact of E. Bury's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Bury with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Bury more than expected).

Fields of papers citing papers by E. Bury

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Bury. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Bury. The network helps show where E. Bury may publish in the future.

Co-authorship network of co-authors of E. Bury

This figure shows the co-authorship network connecting the top 25 collaborators of E. Bury. A scholar is included among the top collaborators of E. Bury based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Bury. E. Bury is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Diaz-Fortuny, J., et al.. (2024). An In-Depth Study of Ring Oscillator Reliability under Accelerated Degradation and Annealing to Unveil Integrated Circuit Usage. Micromachines. 15(6). 769–769. 2 indexed citations
2.
Diaz-Fortuny, J., et al.. (2024). Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology. 4C.1–1. 2 indexed citations
3.
Diaz-Fortuny, J., Benedikt Gierlichs, R. Degraeve, et al.. (2024). Unveiling the Vulnerability of Oxide-Breakdown-Based PUF. IEEE Electron Device Letters. 45(5). 750–753. 3 indexed citations
4.
Grill, Alexander, E. Bury, Adrian Chasin, et al.. (2024). Cryogenic Temperature Effects on 16nm FinFet Performance and Mismatch. 341–344. 1 indexed citations
5.
Grill, Alexander, J. Diaz-Fortuny, E. Bury, et al.. (2023). A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays. 1–3. 8 indexed citations
6.
Diaz-Fortuny, J., et al.. (2023). Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology. IEEE Transactions on Device and Materials Reliability. 23(3). 346–354. 5 indexed citations
7.
Tyaginov, Stanislav, E. Bury, Alexander Grill, et al.. (2023). Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range. Micromachines. 14(11). 2018–2018. 1 indexed citations
8.
Yu, Hao, Bjorn Vermeersch, Uthayasankaran Peralagu, et al.. (2023). Charge Movement in Back Barrier Induced Time-Dependent On-State Breakdown of GaN HEMT. 1–4. 1 indexed citations
9.
Diaz-Fortuny, J., et al.. (2022). Towards Complete Recovery of Circuit Degradation by Annealing With On-Chip Heaters. IEEE Electron Device Letters. 44(2). 201–204. 4 indexed citations
10.
Kaczer, B., Stanislav Tyaginov, E. Bury, et al.. (2022). Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. Lirias (KU Leuven). 6A.2–1. 12 indexed citations
11.
Diaz-Fortuny, J., et al.. (2022). Assessment of Transistor Aging Models in a 28nm CMOS Technology at a Wide Range of Stress Conditions. Lirias (KU Leuven). 1–6. 4 indexed citations
12.
Kaczer, B., Stanislav Tyaginov, J. Franco, et al.. (2021). The properties, effect and extraction of localized defect profiles from degraded FET characteristics. Lirias (KU Leuven). 1–7. 3 indexed citations
13.
Wu, Zhicheng, J. Franco, Philippe Roussel, et al.. (2021). Physics-based device aging modelling framework for accurate circuit reliability assessment. 3 indexed citations
14.
Makarov, Alexander, Philippe Roussel, E. Bury, et al.. (2020). Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach. Micromachines. 11(7). 657–657. 1 indexed citations
15.
Bury, E., et al.. (2019). A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS. IEEE Journal of Solid-State Circuits. 54(10). 2765–2776. 57 indexed citations
16.
Kaczer, B., Stanislav Tyaginov, Zlatan Stanojević, et al.. (2019). Full ($V_{\mathrm{g}},\ V_{\mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. Lirias (KU Leuven). 1–7. 12 indexed citations
17.
Makarov, Alexander, B. Kaczer, Adrian Chasin, et al.. (2019). Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach. IEEE Electron Device Letters. 40(10). 1579–1582. 10 indexed citations
18.
Wang, Pengfei, En Xia Zhang, Wenjun Liao, et al.. (2018). X-Ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices. IEEE Transactions on Nuclear Science. 65(8). 1519–1524. 13 indexed citations
19.
Bury, E., B. Kaczer, J. Franco, et al.. (2017). Statistical assessment of the full V<inf>G</inf>/V<inf>D</inf> degradation space using dedicated device arrays. 2D–5.1. 13 indexed citations
20.
Putcha, V., E. Bury, Pieter Weckx, et al.. (2014). Design and simulation of on-chip circuits for parallel characterization of ultrascaled transistors for BTI reliability. Lirias (KU Leuven). 99–102. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Dimitri Linten Breakdown of academic impact, for papers by Paolo A. Gargini Breakdown of academic impact, for papers by Harish M. Kittur Breakdown of academic impact, for papers by Srivatsa Srinivasa Breakdown of academic impact, for papers by C. Kothandaraman Breakdown of academic impact, for papers by Xiaoyong Xue Breakdown of academic impact, for papers by M. Kido Breakdown of academic impact, for papers by Stefan Cosemans Breakdown of academic impact, for papers by Hyungcheol Shin Breakdown of academic impact, for papers by Chrong Jung Lin
Rankless by CCL
2026