Stefaan Forment

644 total citations
25 papers, 547 citations indexed

About

Stefaan Forment is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Stefaan Forment has authored 25 papers receiving a total of 547 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 4 papers in Biomedical Engineering. Recurrent topics in Stefaan Forment's work include Semiconductor materials and interfaces (13 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers) and Semiconductor materials and devices (9 papers). Stefaan Forment is often cited by papers focused on Semiconductor materials and interfaces (13 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers) and Semiconductor materials and devices (9 papers). Stefaan Forment collaborates with scholars based in Belgium, China and Türkiye. Stefaan Forment's co-authors include R.L. Van Meirhaeghe, Peter Hanselaer, Shiyang Zhu, Bing-Zong Li, Guo-Ping Ru, Karl Opsomer, Wouter Leroy, W. P. Gomes, Katrien Strubbe and Mehmet Biber and has published in prestigious journals such as Applied Physics Letters, Physical Chemistry Chemical Physics and Measurement Science and Technology.

In The Last Decade

Stefaan Forment

25 papers receiving 520 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Stefaan Forment Belgium 12 418 412 83 80 34 25 547
Cheng Ren China 14 306 0.7× 445 1.1× 114 1.4× 79 1.0× 27 0.8× 64 656
Peiyu Wu China 12 163 0.4× 411 1.0× 51 0.6× 87 1.1× 31 0.9× 99 527
Zhongliang Qiao China 13 217 0.5× 584 1.4× 81 1.0× 314 3.9× 23 0.7× 88 730
Jorge A. Holguín‐Lerma Saudi Arabia 15 187 0.4× 421 1.0× 110 1.3× 99 1.2× 166 4.9× 36 577
Tariq Manzur United States 9 145 0.3× 171 0.4× 39 0.5× 72 0.9× 26 0.8× 42 332
Joachim John Belgium 15 218 0.5× 512 1.2× 76 0.9× 140 1.8× 61 1.8× 68 616
F. Nemouchi France 15 377 0.9× 562 1.4× 118 1.4× 108 1.4× 17 0.5× 67 671
Nir Dahan Israel 11 255 0.6× 129 0.3× 135 1.6× 116 1.4× 13 0.4× 26 515
David N. Hutchison United States 6 230 0.6× 445 1.1× 132 1.6× 78 1.0× 5 0.1× 7 577
M.L. Osowski United States 16 301 0.7× 600 1.5× 68 0.8× 48 0.6× 37 1.1× 69 660

Countries citing papers authored by Stefaan Forment

Since Specialization
Citations

This map shows the geographic impact of Stefaan Forment's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Stefaan Forment with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Stefaan Forment more than expected).

Fields of papers citing papers by Stefaan Forment

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Stefaan Forment. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Stefaan Forment. The network helps show where Stefaan Forment may publish in the future.

Co-authorship network of co-authors of Stefaan Forment

This figure shows the co-authorship network connecting the top 25 collaborators of Stefaan Forment. A scholar is included among the top collaborators of Stefaan Forment based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Stefaan Forment. Stefaan Forment is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Forment, Stefaan, et al.. (2014). Near-field and far-field goniophotometry of narrow-beam LED arrays. Lighting Research & Technology. 47(4). 470–482. 8 indexed citations
2.
Forment, Stefaan, et al.. (2014). Near-field and far-field goniophotometry of focused LED arrays. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9131. 913104–913104. 1 indexed citations
3.
Forment, Stefaan, et al.. (2012). The use of Near Field Goniophotometers for LED lighting applications. VUBIR (Vrije Universiteit Brussel). 1 indexed citations
4.
Ryckaert, Wouter, et al.. (2011). Performance of Led Linear Replacement Lamps. Lirias (KU Leuven). 20(1). 129–139. 3 indexed citations
5.
Forment, Stefaan & Peter Hanselaer. (2010). Stray light performance of a combined monochromator–spectrograph UV irradiance measuring instrument. Measurement Science and Technology. 21(8). 85304–85304. 3 indexed citations
6.
Smet, Kevin, Wouter Ryckaert, Stefaan Forment, et al.. (2009). Colour rendering: an object based approach. Lirias (KU Leuven). 1 indexed citations
7.
Hanselaer, Peter, Arno Keppens, Stefaan Forment, Wouter Ryckaert, & Geert Deconinck. (2009). A new integrating sphere design for spectral radiant flux determination of light-emitting diodes. Measurement Science and Technology. 20(9). 95111–95111. 33 indexed citations
8.
Leloup, Frédéric, Stefaan Forment, Philip Dutré, Michael Pointer, & Peter Hanselaer. (2008). Design of an instrument for measuring the spectral bidirectional scatter distribution function. Applied Optics. 47(29). 5454–5454. 64 indexed citations
9.
Forment, Stefaan, et al.. (2008). A Narrow Beam Reflector for a Two-Dimensional Array of Power Light Emitting Diodes. LEUKOS The Journal of the Illuminating Engineering Society of North America. 4(4). 243–254. 4 indexed citations
10.
Simoen, Eddy, C. Claeys, Sonja Sioncke, et al.. (2007). Lifetime and leakage current considerations in metal-doped germanium. Journal of Materials Science Materials in Electronics. 18(7). 799–804. 12 indexed citations
11.
Leloup, Frédéric, et al.. (2007). BRDF and gloss measurements. Lirias (KU Leuven). 4 indexed citations
12.
Simoen, Eddy, Karl Opsomer, Cor Claeys, et al.. (2006). Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium. Applied Physics Letters. 88(18). 17 indexed citations
13.
Opsomer, Karl, C. Claeys, Karen Maex, et al.. (2006). A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium. Materials Science in Semiconductor Processing. 9(4-5). 554–558. 10 indexed citations
14.
Forment, Stefaan, Jan Vanhellemont, P. Clauws, et al.. (2006). A deep-level transient spectroscopy study of transition metals in n-type germanium. Materials Science in Semiconductor Processing. 9(4-5). 559–563. 18 indexed citations
15.
Simoen, Eddy, Karl Opsomer, C. Claeys, et al.. (2006). Point-Defect Generation in Ni-, Pd-, and Pt-Germanided Schottky Barriers on N-Type Germanium Substrates. ECS Transactions. 3(2). 391–400. 2 indexed citations
16.
Sioncke, Sonja, Eddy Simoen, Tom Janssens, et al.. (2006). Characterization of Ge Implanted with Ni and Hf Ions. ECS Transactions. 3(7). 1109–1119. 1 indexed citations
17.
Ru, Guo-Ping, R.L. Van Meirhaeghe, Stefaan Forment, et al.. (2005). Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes. Solid-State Electronics. 49(4). 606–611. 38 indexed citations
18.
Forment, Stefaan, Mehmet Biber, R.L. Van Meirhaeghe, Wouter Leroy, & A. Türüt. (2004). Influence of hydrogen treatment and annealing processes upon the Schottky barrier height of Au/n-GaAs and Ti/n-GaAs diodes. Semiconductor Science and Technology. 19(12). 1391–1396. 11 indexed citations
19.
Zhu, Shiyang, R.L. Van Meirhaeghe, Stefaan Forment, Guo-Ping Ru, & Bing-Zong Li. (2003). Effects of the annealing temperature on Ni silicide/n-Si(100) Schottky contacts. Solid-State Electronics. 48(1). 29–35. 54 indexed citations
20.
Strubbe, Katrien, et al.. (2001). Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers: Influence of surface composition upon the barrier height. Physical Chemistry Chemical Physics. 3(23). 5297–5303. 14 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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