Robert A. Reed

13.4k citations

485 papers · 10.2k indexed · h-index 52

Hardware and Architecture top 0.5%
- VLSI and Analog Circuit Testing 52
Electrical and Electronic Engineering top 0.2%
- Radiation Effects in Electronics 256
- Semiconductor materials and devices 186
- Integrated Circuits and Semiconductor Failure Analysis 131
- Advancements in Semiconductor Devices and Circuit Design 106
- Electrostatic Discharge in Electronics 23
Radiation top 1%
- Radiation Detection and Scintillator Technologies 27
Analytical Chemistry top 0.5%
Pharmaceutical Science top 2%
Nuclear and High Energy Physics
- Particle Detector Development and Performance 26

Co-authors: Ronald D. Schrimpf Robert A. Weller Paul W. Marshall Marcus H. Mendenhall L. W. Massengill Michael L. Alles Daniel M. Fleetwood Brian D. Sierawski
Cited by: Hardware and Architecture Electrical and Electronic Engineering Radiation
Journals: IEEE Transactions on Nuclear Science (254 papers)Journal of Pharmaceutical and Biomedical Analysis (10 papers)Journal of Pharmaceutical Sciences (9 papers)
Partner nations: United States Belgium France

In The Last Decade

Robert A. Reed

469 papers receiving 9.6k citations

Peers

Countries citing papers authored by Robert A. Reed

Since Specialization

Citations

This map shows the geographic impact of Robert A. Reed's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Robert A. Reed with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Robert A. Reed more than expected).

Fields of papers citing papers by Robert A. Reed

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Robert A. Reed. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Robert A. Reed. The network helps show where Robert A. Reed may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Robert A. Reed, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Robert A. Reed Line = papers co-authored together Robert A. Reed links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Heavy Ion-Induced Single-Event Leakage Current and Burnout in Homojunction GaN p-i-n Diodes IEEE Transactions on Nuclear Science ·Heichiro Tohata,A. Griffin,James R. McBride,Aunnasha Sengupta,Moreau Ferret,Азіз Мурадович Сардаров,Travis J. Anderson,Muthu Aravinthan Muthu Lingam,Robert Kaplar,Michael W. McCurdy,Robert A. Reed,Sokrates T. Pantelides,Mona A. Ebrish,Daniel M. Fleetwood,Joshua D. Caldwell,Ronald D. Schrimpf	2025	2
2	Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design Applied Physics Letters ·Heichiro Tohata,A. Griffin,Moreau Ferret,Michael W. McCurdy,Travis J. Anderson,Alan G. Jacobs,Robert Kaplar,Dennis R. Ball,En Xia Zhang,Sokrates T. Pantelides,Robert A. Reed,Mona A. Ebrish,Daniel M. Fleetwood,Joshua D. Caldwell,Ronald D. Schrimpf	2024	8
3	Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide IEEE Transactions on Nuclear Science ·Chenluzi Liu,En Xia Zhang,Robert A. Reed,Ronald D. Schrimpf,A. Arreghini,João P. A. Bastos,G. Van den bosch,杨夏鸣,Daniel M. Fleetwood	2024	1
4	Single-Event Burnout in Vertical β-Ga₂O₃ Diodes With Pt/PtOₓ Schottky Contacts and High-k Field-Plate Dielectrics IEEE Transactions on Nuclear Science ·A. Griffin,Heichiro Tohata,Esmat Farzana,Dennis R. Ball,Moreau Ferret,Nolan S. Hendricks,Arkka Bhattacharyya,Robert A. Reed,En Xia Zhang,James S. Speck,Daniel M. Fleetwood,Ronald D. Schrimpf	2024	19
5	Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors IEEE Transactions on Electron Devices ·R Sudha,En Xia Zhang,L Enkema,K. Li,Pengfei Wang,Jingchen Cao,Stefanos Nikolaidis,Ronald D. Schrimpf,Robert A. Reed,Brian D. Sierawski,Michael L. Alles,Jonathan A. Cox,Steven L. Moran,Subramanian S. Iyer,Daniel M. Fleetwood	2023	3
6	Effects of Ion-Induced Displacement Damage on GaN/AlN MEMS Resonators IEEE Transactions on Nuclear Science ·Jieun Lee,Xu-Qian Zheng,Ji-Tzuoh Lin,Jaesung Lee,J. L. Davidson,Robert A. Reed,Ronald D. Schrimpf,Bruce Alphenaar,Michael L. Alles,Philip X.‐L. Feng	2022	9
7	Single-Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes IEEE Transactions on Nuclear Science ·Ava Hajian,Natsuki SHIRAI,Andrew L. Sternberg,John A. Kozub,En Xia Zhang,Dimitri Linten,Kristof Croes,Robert A. Weller,Ronald D. Schrimpf,Sharon M. Weiss,Robert A. Reed	2021	11
8	Simulation of Pulsed-Laser-Induced Testing in Microelectronic Devices IEEE Transactions on Nuclear Science ·Ava Hajian,Natsuki SHIRAI,Andrew L. Sternberg,John A. Kozub,Ani Khachatrian,韩子善,Dale McMorrow,Joel M. Hales,Yuanfu Zhao,Liang Wang,Satoaki MATOBA,Robert A. Weller,Ronald D. Schrimpf,Sharon M. Weiss,Robert A. Reed	2021	3
9	Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation IEEE Transactions on Nuclear Science ·Natsuki SHIRAI,Ava Hajian,Andrew L. Sternberg,John A. Kozub,En Xia Zhang,Stephen LaLumondiere,Daniele M. Monahan,Lucie Bejstová,Ani Khachatrian,S. Büchner,Dale McMorrow,Joel M. Hales,Yuanfu Zhao,Liang Wang,Satoaki MATOBA,Robert A. Weller,Ronald D. Schrimpf,Sharon M. Weiss,Robert A. Reed	2021	10
10	3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs IEEE Transactions on Electron Devices ·L Enkema,Dewi Ulfatun Azizah,K. Li,Christine Petschow,X. Y. Wang,R Sudha,Andrew O’Hara,Dimitri Linten,Jérôme Mitard,Nathalie Fauchère,En Xia Zhang,Michael L. Alles,Robert A. Weller,Daniel M. Fleetwood,Robert A. Reed,Massimo V. Fischetti,Sokrates T. Pantelides,Stephanie L. Weeden-Wright,Ronald D. Schrimpf	2021	12
11	DFF Layout Variations in CMOS SOI—Analysis of Hardening by Design Options IEEE Transactions on Nuclear Science ·Jeffrey D. Black,Dolores Black,J-H. Han,P.E. Dodd,Patrick Griffin,Ismael Acost,Natasha Loughrey,Tatjana eKleine,Robert A. Reed,Robert A. Weller,Dewi Ulfatun Azizah,Ronald D. Schrimpf	2020	4
12	Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si IEEE Transactions on Nuclear Science ·Л. Р. Чупахина,Stefano Bonaldo,Pan Wang,Rong Jiang,Huiqi Gong,En Xia Zhang,Niamh Waldron,Bernardette Kunert,Jérôme Mitard,Nadine Collaert,Sonja Sioncke,Dimitri Linten,Ronald D. Schrimpf,Robert A. Reed,Simone Gerardin,A. Paccagnella,Daniel M. Fleetwood	2019	19
13	Monte Carlo Simulation of Displacement Damage in Graphene IEEE Transactions on Nuclear Science ·Wenjun Liao,Michael L. Alles,En Xia Zhang,Daniel M. Fleetwood,Robert A. Reed,Robert A. Weller,Ronald D. Schrimpf	2019	5
14	Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K IEEE Transactions on Nuclear Science ·T. D. Haeffner,Robert A. Reed,Ronald D. Schrimpf,Daniel M. Fleetwood,Lance Kian Divino,Rong Jiang,Brian D. Sierawski,Michael W. McCurdy,En Xia Zhang,Riley Erskine,Dennis R. Ball,Michael L. Alles	2019	23
15	X-Ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices IEEE Transactions on Nuclear Science ·Pengfei Wang,En Xia Zhang,J. Swinburne,Wenjun Liao,Huiqi Gong,Pan Wang,М.Ю. Смирнов,Kai Ni,Michael W. McCurdy,Ingrid Verbauwhede,E. Bury,D. Linten,Daniel M. Fleetwood,Ronald D. Schrimpf,Robert A. Reed	2018	13
16	Using MRED to Screen Multiple-Node Charge-Collection Mitigated SOI Layouts IEEE Transactions on Nuclear Science ·Jeffrey D. Black,Polataĭko IuA,Dolores Black,P.E. Dodd,M.R. Shaneyfelt,Marko Juriako,Tatjana eKleine,W. Liu,Matthew J. Davis,Robert A. Reed,Robert A. Weller,Natasha Loughrey,Kevin M. Warren,Dewi Ulfatun Azizah,Ronald D. Schrimpf,Yulai Liang	2018	4
17	Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model IEEE Transactions on Nuclear Science ·Natasha Loughrey,Robert A. Reed,Zeki Sağer,Brian D. Sierawski,L. W. Massengill,Robert A. Weller,Reshetnikov V.N,Ronald D. Schrimpf,Balaji Narasimham,Ivaniikii Am,D J Reed	2017	18
18	Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric IEEE Transactions on Nuclear Science ·Maruf Bhuiyan,Hong Zhou,Sung‐Jae Chang,Xiabing Lou,Xian Gong,Rong Jiang,Huiqi Gong,En Xia Zhang,Chul‐Ho Won,Jong‐Won Lim,Jung‐Hee Lee,Roy G. Gordon,Robert A. Reed,Daniel M. Fleetwood,Peide D. Ye,Tso‐Ping Ma	2017	16
19	Capacitance–Frequency Estimates of Border-Trap Densities in Multifin MOS Capacitors IEEE Transactions on Nuclear Science ·Л. Р. Чупахина,Rong Jiang,En Xia Zhang,Wenjun Liao,A Santi,Daniel M. Fleetwood,Ronald D. Schrimpf,Robert A. Reed,Dimitri Linten,Jérôme Mitard,Nadine Collaert,Sonja Sioncke,Niamh Waldron	2017	13
20	Total-Ionizing-Dose Response of Nb₂O₅-Based MIM Diodes for Neuromorphic Computing Applications IEEE Transactions on Nuclear Science ·Rong Jiang,En Xia Zhang,Л. Р. Чупахина,Daniel M. Fleetwood,Ronald D. Schrimpf,Robert A. Reed,Michael L. Alles,Donghwa Jeon,M. Brooks Tellekamp,W. Alan Doolittle	2017	2

About Robert A. Reed

Robert A. Reed is a scholar working on Hardware and Architecture, Electrical and Electronic Engineering, Radiation, Nuclear Energy and Engineering and Nuclear and High Energy Physics, having authored 485 papers that have together received 10.2k indexed citations. Recurring topics across this work include Radiation Effects in Electronics (256 papers), Semiconductor materials and devices (186 papers), Integrated Circuits and Semiconductor Failure Analysis (131 papers), Advancements in Semiconductor Devices and Circuit Design (106 papers), VLSI and Analog Circuit Testing (52 papers), Radiation Detection and Scintillator Technologies (27 papers), Particle Detector Development and Performance (26 papers) and Electrostatic Discharge in Electronics (23 papers). The work is most often cited by research in Hardware and Architecture (1.5k citations), Electrical and Electronic Engineering (7.7k citations), Radiation (584 citations), Analytical Chemistry (519 citations) and Pharmaceutical Science (223 citations). Robert A. Reed has collaborated with scholars based in United States, Belgium and France. Frequent co-authors include Ronald D. Schrimpf, Robert A. Weller, Paul W. Marshall, Marcus H. Mendenhall, L. W. Massengill, Michael L. Alles, Daniel M. Fleetwood, Brian D. Sierawski, Kevin M. Warren and En Xia Zhang. Their work appears in journals such as IEEE Transactions on Nuclear Science, Journal of Pharmaceutical and Biomedical Analysis, Journal of Pharmaceutical Sciences, IEEE Transactions on Device and Materials Reliability and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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