Robert A. Reed

13.4k total citations
485 papers, 10.2k citations indexed

About

Robert A. Reed is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Materials Chemistry. According to data from OpenAlex, Robert A. Reed has authored 485 papers receiving a total of 10.2k indexed citations (citations by other indexed papers that have themselves been cited), including 380 papers in Electrical and Electronic Engineering, 58 papers in Hardware and Architecture and 43 papers in Materials Chemistry. Recurrent topics in Robert A. Reed's work include Radiation Effects in Electronics (256 papers), Semiconductor materials and devices (186 papers) and Integrated Circuits and Semiconductor Failure Analysis (131 papers). Robert A. Reed is often cited by papers focused on Radiation Effects in Electronics (256 papers), Semiconductor materials and devices (186 papers) and Integrated Circuits and Semiconductor Failure Analysis (131 papers). Robert A. Reed collaborates with scholars based in United States, Belgium and France. Robert A. Reed's co-authors include Ronald D. Schrimpf, Robert A. Weller, Paul W. Marshall, Marcus H. Mendenhall, L. W. Massengill, Michael L. Alles, Daniel M. Fleetwood, Brian D. Sierawski, Kevin M. Warren and En Xia Zhang and has published in prestigious journals such as Science, Journal of the American Chemical Society and The Journal of Chemical Physics.

In The Last Decade

Robert A. Reed

469 papers receiving 9.6k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Robert A. Reed United States 52 7.7k 1.5k 926 584 565 485 10.2k
J.W. Eastwood United Kingdom 22 1.9k 0.3× 249 0.2× 1.5k 1.7× 112 0.2× 1.1k 1.9× 59 8.7k
Wibe A. de Jong United States 44 995 0.1× 239 0.2× 2.5k 2.8× 130 0.2× 345 0.6× 180 9.8k
Hiroshi Nakashima Japan 40 891 0.1× 200 0.1× 849 0.9× 1.6k 2.8× 325 0.6× 414 7.5k
Tjerk P. Straatsma United States 31 1.7k 0.2× 190 0.1× 4.8k 5.2× 81 0.1× 3.4k 6.0× 61 18.2k
Mark J. Kushner United States 68 14.3k 1.9× 29 0.0× 3.5k 3.8× 73 0.1× 836 1.5× 453 17.2k
Takenobu Suzuki Japan 44 5.2k 0.7× 71 0.0× 2.5k 2.7× 94 0.2× 562 1.0× 541 8.0k
Jarek Nieplocha United States 20 990 0.1× 980 0.7× 1.3k 1.4× 43 0.1× 273 0.5× 83 5.7k
Carsten Kutzner Germany 17 980 0.1× 136 0.1× 3.1k 3.3× 22 0.0× 2.1k 3.7× 37 15.6k
Kenji Yasuoka Japan 44 656 0.1× 107 0.1× 1.4k 1.5× 31 0.1× 1.1k 1.9× 244 5.9k
Qi Wang China 58 7.2k 0.9× 34 0.0× 3.2k 3.4× 60 0.1× 5.0k 8.9× 747 14.8k

Countries citing papers authored by Robert A. Reed

Since Specialization
Citations

This map shows the geographic impact of Robert A. Reed's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Robert A. Reed with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Robert A. Reed more than expected).

Fields of papers citing papers by Robert A. Reed

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Robert A. Reed. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Robert A. Reed. The network helps show where Robert A. Reed may publish in the future.

Co-authorship network of co-authors of Robert A. Reed

This figure shows the co-authorship network connecting the top 25 collaborators of Robert A. Reed. A scholar is included among the top collaborators of Robert A. Reed based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Robert A. Reed. Robert A. Reed is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
McBride, James R., Travis J. Anderson, Robert Kaplar, et al.. (2025). Heavy Ion-Induced Single-Event Leakage Current and Burnout in Homojunction GaN p-i-n Diodes. IEEE Transactions on Nuclear Science. 72(8). 2377–2385. 2 indexed citations
2.
McCurdy, Michael W., Travis J. Anderson, Alan G. Jacobs, et al.. (2024). Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design. Applied Physics Letters. 124(13). 8 indexed citations
3.
Zhang, En Xia, Robert A. Reed, Ronald D. Schrimpf, et al.. (2024). Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide. IEEE Transactions on Nuclear Science. 71(8). 1789–1797. 1 indexed citations
4.
Farzana, Esmat, Dennis R. Ball, Nolan S. Hendricks, et al.. (2024). Single-Event Burnout in Vertical β-Ga₂O₃ Diodes With Pt/PtOₓ Schottky Contacts and High-k Field-Plate Dielectrics. IEEE Transactions on Nuclear Science. 71(4). 515–521. 19 indexed citations
5.
Zhang, En Xia, K. Li, Pengfei Wang, et al.. (2023). Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors. IEEE Transactions on Electron Devices. 70(6). 3215–3222. 3 indexed citations
6.
Zheng, Xu-Qian, Ji-Tzuoh Lin, Jaesung Lee, et al.. (2022). Effects of Ion-Induced Displacement Damage on GaN/AlN MEMS Resonators. IEEE Transactions on Nuclear Science. 69(3). 216–224. 9 indexed citations
7.
Sternberg, Andrew L., John A. Kozub, En Xia Zhang, et al.. (2021). Single-Event Transient Response of Vertical and Lateral Waveguide-Integrated Germanium Photodiodes. IEEE Transactions on Nuclear Science. 68(5). 801–806. 11 indexed citations
8.
Sternberg, Andrew L., John A. Kozub, Ani Khachatrian, et al.. (2021). Simulation of Pulsed-Laser-Induced Testing in Microelectronic Devices. IEEE Transactions on Nuclear Science. 68(10). 2496–2507. 3 indexed citations
9.
Sternberg, Andrew L., John A. Kozub, En Xia Zhang, et al.. (2021). Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation. IEEE Transactions on Nuclear Science. 68(5). 626–633. 10 indexed citations
10.
Li, K., Andrew O’Hara, Dimitri Linten, et al.. (2021). 3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs. IEEE Transactions on Electron Devices. 68(5). 2556–2563. 12 indexed citations
11.
Black, Jeffrey D., Dolores Black, P.E. Dodd, et al.. (2020). DFF Layout Variations in CMOS SOI—Analysis of Hardening by Design Options. IEEE Transactions on Nuclear Science. 67(6). 1125–1132. 4 indexed citations
12.
Bonaldo, Stefano, Pan Wang, Rong Jiang, et al.. (2019). Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si. IEEE Transactions on Nuclear Science. 66(7). 1599–1605. 19 indexed citations
13.
Liao, Wenjun, Michael L. Alles, En Xia Zhang, et al.. (2019). Monte Carlo Simulation of Displacement Damage in Graphene. IEEE Transactions on Nuclear Science. 66(7). 1730–1737. 5 indexed citations
14.
Haeffner, T. D., Robert A. Reed, Ronald D. Schrimpf, et al.. (2019). Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K. IEEE Transactions on Nuclear Science. 66(6). 911–917. 23 indexed citations
15.
Wang, Pengfei, En Xia Zhang, Wenjun Liao, et al.. (2018). X-Ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices. IEEE Transactions on Nuclear Science. 65(8). 1519–1524. 13 indexed citations
16.
Black, Jeffrey D., Dolores Black, P.E. Dodd, et al.. (2018). Using MRED to Screen Multiple-Node Charge-Collection Mitigated SOI Layouts. IEEE Transactions on Nuclear Science. 66(1). 233–239. 4 indexed citations
17.
Reed, Robert A., Brian D. Sierawski, L. W. Massengill, et al.. (2017). Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model. IEEE Transactions on Nuclear Science. 65(2). 712–718. 18 indexed citations
18.
Bhuiyan, Maruf, Hong Zhou, Sung‐Jae Chang, et al.. (2017). Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric. IEEE Transactions on Nuclear Science. 65(1). 46–52. 16 indexed citations
19.
Jiang, Rong, En Xia Zhang, Wenjun Liao, et al.. (2017). Capacitance–Frequency Estimates of Border-Trap Densities in Multifin MOS Capacitors. IEEE Transactions on Nuclear Science. 65(1). 175–183. 13 indexed citations
20.
Jiang, Rong, En Xia Zhang, Daniel M. Fleetwood, et al.. (2017). Total-Ionizing-Dose Response of Nb2O5-Based MIM Diodes for Neuromorphic Computing Applications. IEEE Transactions on Nuclear Science. 65(1). 78–83. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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