Florence Bellenger

937 total citations
30 papers, 833 citations indexed

About

Florence Bellenger is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Florence Bellenger has authored 30 papers receiving a total of 833 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 11 papers in Materials Chemistry. Recurrent topics in Florence Bellenger's work include Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Semiconductor materials and interfaces (14 papers). Florence Bellenger is often cited by papers focused on Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Semiconductor materials and interfaces (14 papers). Florence Bellenger collaborates with scholars based in Belgium, France and Greece. Florence Bellenger's co-authors include Michel Houssa, Marc Meuris, Matty Caymax, Annelies Delabie, Marc Heyns, Thierry Conard, Sven Van Elshocht, K. De Meyer, Koen Martens and Valeri Afanasiev and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Florence Bellenger

28 papers receiving 798 citations

Peers

Countries citing papers authored by Florence Bellenger

Since Specialization

Citations

This map shows the geographic impact of Florence Bellenger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Florence Bellenger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Florence Bellenger more than expected).

Fields of papers citing papers by Florence Bellenger

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Florence Bellenger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Florence Bellenger. The network helps show where Florence Bellenger may publish in the future.

Co-authorship network of co-authors of Florence Bellenger

This figure shows the co-authorship network connecting the top 25 collaborators of Florence Bellenger. A scholar is included among the top collaborators of Florence Bellenger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Florence Bellenger. Florence Bellenger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Investigation of the Electrical Properties of Ge/High-k Gate Stack: GeO<sub>2</sub> VS Si-cap 2011 ·Jérôme Mitard, Florence Bellenger, (unknown), Brice De Jaeger, Benjamin Vincent, Laura Nyns, Koen Martens, Evi Vrancken, (unknown), Dennis Lin, Roger Loo, (unknown), K. De Meyer, Marc Heyns, Naoto Horiguchi	2
2	Interface and Border Traps in Ge-Based Gate Stacks 2011 ·ECS Transactions ·Laura Nyns, Dennis Lin, Guy Brammertz, Florence Bellenger, (unknown), Sonja Sioncke, Sven Van Elshocht, Matty Caymax	9
3	High FET Performance for a Future CMOS $\hbox{GeO}_{2}$ -Based Technology 2010 ·IEEE Electron Device Letters ·Florence Bellenger, Brice De Jaeger, Clément Merckling, Michel Houssa, J. Penaud, Laura Nyns, Evi Vrancken, Matty Caymax, Marc Meuris, Thomas Hoffmann, K. De Meyer, Marc Heyns	49
4	H2S molecular beam passivation of Ge(001) 2010 ·Microelectronic Engineering ·Clément Merckling, Yen‐Chung Chang, Chun‐An Lu, J. Penaud, Mario El Kazzi, Florence Bellenger, Guy Brammertz, Minghwei Hong, J. Kwo, Marc Meuris, J. Dekoster, Marc Heyns, Matty Caymax	8
5	H2O- and O3-Based Atomic Layer Deposition of High-K Dielectric Films on GeO2 Passivation Layers 2009 ·Journal of The Electrochemical Society ·Annelies Delabie, (unknown), Florence Bellenger, Matty Caymax, Thierry Conard, Alexis Franquet, Sonja Sioncke, Sven Van Elshocht, Marc Heyns, Marc Meuris	1
6	Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS 2009 ·Microelectronic Engineering ·Clément Merckling, J. Penaud, David Kohen, Florence Bellenger, (unknown), Guy Brammertz, Mario El Kazzi, Michel Houssa, J. Dekoster, Matty Caymax, Marc Meuris, Marc Heyns	14
7	Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices 2009 ·MRS Proceedings ·Mathieu Moreau, Daniela Munteanu, Jean‐Luc Autran, Florence Bellenger, Jérôme Mitard, Michel Houssa	0
8	Molecular Beam Epitaxy study of a common a-GeO₂ interfacial passivation layer for Ge- and GaAs-based MOS heterostructures 2009 ·MRS Proceedings ·Clément Merckling, J. Penaud, Florence Bellenger, David Kohen, Geoffrey Pourtois, Guy Brammertz, (unknown), Mario El Kazzi, Michel Houssa, J. Dekoster, Matty Caymax, Marc Meuris, Marc Heyns	1
9	Extrinsic interface formation of HfO2 and Al2O3∕GeOx gate stacks on Ge (100) substrates 2009 ·Journal of Applied Physics ·Hyungtak Seo, Florence Bellenger, Kwun‐Bum Chung, Michel Houssa, Marc Meuris, Marc Heyns, G. Lucovsky	19
10	Interface control of high-k gate dielectrics on Ge 2008 ·Applied Surface Science ·Matty Caymax, Michel Houssa, Geoffrey Pourtois, Florence Bellenger, Koen Martens, Annelies Delabie, Sven Van Elshocht	51
11	Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2 2008 ·Applied Physics Letters ·V. V. Afanas’ev, A. Stesmans, Annelies Delabie, Florence Bellenger, Michel Houssa, Marc Meuris	61
12	Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams 2008 ·Materials Science in Semiconductor Processing ·V. V. Afanas’ev, A. Stesmans, Annelies Delabie, Florence Bellenger, Michel Houssa, Ruben Lieten, Clément Merckling, J. Penaud, D.P. Brunco, Marc Meuris	6
13	Interface Properties Improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 Gate Stacks using Molecular Beam Deposition 2008 ·ECS Transactions ·Florence Bellenger, Clément Merckling, J. Penaud, Michel Houssa, Matty Caymax, Marc Meuris, K. De Meyer, Marc Heyns	13
14	Germanium MOSFETs With $\hbox{CeO}_{2}/\hbox{HfO}_{2}/ \hbox{TiN}$ Gate Stacks 2007 ·IEEE Transactions on Electron Devices ·G. Nicholas, D.P. Brunco, A. Dimoulas, Jan Van Steenbergen, Florence Bellenger, Michel Houssa, Matty Caymax, Marc Meuris, Y. Panayiotatos, A. Sotiropoulos	34
15	High-k gate dielectrics on Ge(100) - effective electrical passivation using germanium oxide 2007 ·Annelies Delabie, Florence Bellenger, Michel Houssa, Thierry Conard, Sven Van Elshocht, Matty Caymax, Marc Heyns, M. Meuris	0
16	Materials and electrical characterization of molecular beam deposited CeO2 and CeO2/HfO2 bilayers on germanium 2007 ·Journal of Applied Physics ·D.P. Brunco, A. Dimoulas, Nikos Boukos, Michel Houssa, Thierry Conard, Koen Martens, Chao Zhao, Florence Bellenger, Matty Caymax, Marc Meuris, M. M. Heyns	45
17	Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications 2007 ·ECS Transactions ·Annelies Delabie, Laura Nyns, Florence Bellenger, Matty Caymax, Thierry Conard, Alexis Franquet, Michel Houssa, Dennis Lin, Marc Meuris, (unknown), Sonja Sioncke, Johan Swerts, Yanina Fedorenko, Jan Willem Maes, Sven Van Elshocht, Stefan De Gendt	3
18	Electrical Passivation of the (100)Ge Surface by Its Thermal Oxide 2007 ·ECS Transactions ·Florence Bellenger, Michel Houssa, Annelies Delabie, Thierry Conard, Matty Caymax, Marc Meuris, K. De Meyer, Marc Heyns	5
19	Electrical Properties of Atomic-Beam Deposited GeO[sub 1−x]N[sub x]∕HfO[sub 2] Gate Stacks on Ge 2006 ·Journal of The Electrochemical Society ·Michel Houssa, Thierry Conard, Florence Bellenger, G. Mavrou, Y. Panayiotatos, A. Sotiropoulos, A. Dimoulas, Marc Meuris, Matty Caymax, M. M. Heyns	14
20	Germanium FETs and capacitors with rare earth CeO2/HfO2 gates 2006 ·A. Dimoulas, Y. Panayiotatos, A. Sotiropoulos, Polychronis Tsipas, D.P. Brunco, G. Nicholas, Jan Van Steenbergen, Florence Bellenger, Michel Houssa, Matty Caymax, Marc Meuris	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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