Wilman Tsai

3.0k total citations
112 papers, 2.4k citations indexed

About

Wilman Tsai is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Wilman Tsai has authored 112 papers receiving a total of 2.4k indexed citations (citations by other indexed papers that have themselves been cited), including 100 papers in Electrical and Electronic Engineering, 39 papers in Materials Chemistry and 35 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Wilman Tsai's work include Semiconductor materials and devices (79 papers), Advancements in Semiconductor Devices and Circuit Design (47 papers) and Ferroelectric and Negative Capacitance Devices (33 papers). Wilman Tsai is often cited by papers focused on Semiconductor materials and devices (79 papers), Advancements in Semiconductor Devices and Circuit Design (47 papers) and Ferroelectric and Negative Capacitance Devices (33 papers). Wilman Tsai collaborates with scholars based in United States, Taiwan and Belgium. Wilman Tsai's co-authors include Marc Heyns, Chi On Chui, S. Koveshnikov, S. Oktyabrsky, N. Goel, Michail M. Yakimov, P. Majhi, John J. Vajo, W. H. Weinberg and Krishna C. Saraswat and has published in prestigious journals such as Nature Communications, Nano Letters and ACS Nano.

In The Last Decade

Wilman Tsai

108 papers receiving 2.3k citations

Peers

Wilman Tsai
Dirk König Australia
Paola Favia Belgium
S. O’Brien Ireland
Kristen Kaasbjerg Denmark
Marie‐Blandine Martin France
Dimitrios Kazazis Switzerland
T. Sorsch United States
M. M. de Lima Spain
Mohamed Benyoucef Germany
Saskia F. Fischer Germany
Dirk König Australia
Wilman Tsai
Citations per year, relative to Wilman Tsai Wilman Tsai (= 1×) peers Dirk König

Countries citing papers authored by Wilman Tsai

Since Specialization
Citations

This map shows the geographic impact of Wilman Tsai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wilman Tsai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wilman Tsai more than expected).

Fields of papers citing papers by Wilman Tsai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wilman Tsai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wilman Tsai. The network helps show where Wilman Tsai may publish in the future.

Co-authorship network of co-authors of Wilman Tsai

This figure shows the co-authorship network connecting the top 25 collaborators of Wilman Tsai. A scholar is included among the top collaborators of Wilman Tsai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Wilman Tsai. Wilman Tsai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Huang, Fei, Lei Wan, Haidong Lu, et al.. (2024). Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects. ACS Nano. 18(27). 17600–17610. 12 indexed citations
2.
Yoo, Chanyoung, et al.. (2024). Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors. Nano Letters. 24(19). 5737–5745. 13 indexed citations
3.
Hsu, Chen-Feng, et al.. (2024). Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) With Four Bits per SOT Programming Line. IEEE Electron Device Letters. 45(10). 1800–1803. 4 indexed citations
4.
Lin, Qing, Nathaniel S. Safron, Donglai Zhong, et al.. (2024). Enhancement-Mode Atomic Layer Deposited W-Doped In2O3 Transistor at 55 nm Channel Length by Oxide Capping Layer with Improved Stability. 1–4. 2 indexed citations
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Xue, Fen, Christoph Klewe, Padraic Shafer, et al.. (2024). Enhanced spin-torque efficiency by metal insertion in the Pt/Co/MgO system. Physical review. B.. 110(17). 2 indexed citations
7.
Huang, Fei, Zhouchangwan Yu, Vivek Thampy, et al.. (2023). Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf0.5Zr0.5O2 Thin Film Capacitors. Advanced Electronic Materials. 9(6). 17 indexed citations
8.
Huang, Fei, Zhouchangwan Yu, J. D. Baniecki, et al.. (2023). Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films. Solid-State Electronics. 208. 108714–108714. 4 indexed citations
9.
Xue, Fen, Christoph Klewe, Emrah Turgut, et al.. (2023). Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N. Nature Communications. 14(1). 3932–3932. 24 indexed citations
10.
Huang, Fei, Zhouchangwan Yu, Chanyoung Yoo, et al.. (2023). Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering. ACS Applied Materials & Interfaces. 15(43). 50246–50253. 12 indexed citations
11.
Yu, Zhouchangwan, Yu‐Kai Chang, Yu‐Chuan Shih, et al.. (2022). CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories. Advanced Electronic Materials. 8(7). 11 indexed citations
12.
Yu, Zhouchangwan, Yunzhi Liu, Fei Huang, et al.. (2022). Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia–Zirconia Alloys. ACS Applied Materials & Interfaces. 14(47). 53057–53064. 10 indexed citations
13.
Li, Xiang, Peng Li, Vincent Hou, et al.. (2021). Large and robust charge-to-spin conversion in sputtered conductive WTe with disorder. Matter. 4(5). 1639–1653. 22 indexed citations
14.
Xue, Fen, Mahendra DC, Chong Bi, et al.. (2021). Tunable spin–orbit torque efficiency in in-plane and perpendicular magnetized [Pt/Co]n multilayer. Applied Physics Letters. 118(4). 6 indexed citations
15.
Li, Xiang, Mahendra DC, Chengyang Yao, et al.. (2020). Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory. IEEE Journal of the Electron Devices Society. 8. 674–680. 22 indexed citations
16.
Li, Xiang, Peng Li, Vincent Hou, et al.. (2020). Large and Robust Charge-to-Spin Conversion in Sputtered Weyl Semimetal WTex with Structural Disorder. arXiv (Cornell University). 3 indexed citations
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Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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