Y. Mols

417 total citations
23 papers, 308 citations indexed

About

Y. Mols is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Y. Mols has authored 23 papers receiving a total of 308 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 6 papers in Biomedical Engineering. Recurrent topics in Y. Mols's work include Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Semiconductor Quantum Structures and Devices (9 papers). Y. Mols is often cited by papers focused on Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers) and Semiconductor Quantum Structures and Devices (9 papers). Y. Mols collaborates with scholars based in Belgium, Japan and Germany. Y. Mols's co-authors include Bernardette Kunert, R. Langer, Weiming Guo, Nadine Collaert, Marc Meuris, Guy Brammertz, Joris Van Campenhout, Marianna Pantouvaki, Dries Van Thourhout and K. Barla and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Thin Solid Films.

In The Last Decade

Y. Mols

22 papers receiving 297 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Y. Mols Belgium 8 291 127 90 83 11 23 308
Nupur Bhargava United States 11 402 1.4× 212 1.7× 133 1.5× 58 0.7× 9 0.8× 19 424
Martin von Haartman Sweden 12 479 1.6× 78 0.6× 91 1.0× 66 0.8× 10 0.9× 27 521
W.Y. Loh Singapore 14 503 1.7× 182 1.4× 147 1.6× 91 1.1× 6 0.5× 36 522
Oluwamuyiwa Olubuyide United States 9 306 1.1× 109 0.9× 53 0.6× 36 0.4× 6 0.5× 20 319
R. Jakomin Brazil 10 339 1.2× 228 1.8× 138 1.5× 137 1.7× 14 1.3× 31 381
Stefan Bechler Germany 9 409 1.4× 217 1.7× 109 1.2× 75 0.9× 5 0.5× 18 431
Jinkwan Kwoen Japan 8 224 0.8× 207 1.6× 38 0.4× 70 0.8× 8 0.7× 24 276
R. G. Beck United States 8 197 0.7× 238 1.9× 118 1.3× 52 0.6× 18 1.6× 10 322
Davide Cutaia Switzerland 9 433 1.5× 190 1.5× 238 2.6× 58 0.7× 7 0.6× 13 476
J.G. Fiorenza United States 14 512 1.8× 162 1.3× 144 1.6× 65 0.8× 12 1.1× 36 531

Countries citing papers authored by Y. Mols

Since Specialization
Citations

This map shows the geographic impact of Y. Mols's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Mols with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Mols more than expected).

Fields of papers citing papers by Y. Mols

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Mols. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Mols. The network helps show where Y. Mols may publish in the future.

Co-authorship network of co-authors of Y. Mols

This figure shows the co-authorship network connecting the top 25 collaborators of Y. Mols. A scholar is included among the top collaborators of Y. Mols based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y. Mols. Y. Mols is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Parvais, Bertrand, Abhitosh Vais, Y. Mols, et al.. (2022). III-V on a Si platform for the next generations of communication systems. 250–252. 3 indexed citations
2.
Vais, Abhitosh, Po-Chun Hsu, Hao Yu, et al.. (2021). A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies. Ghent University Academic Bibliography (Ghent University). 1–5. 1 indexed citations
3.
Vais, Abhitosh, Liesbeth Witters, Y. Mols, et al.. (2021). DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates. VUBIR (Vrije Universiteit Brussel). 89–92. 3 indexed citations
4.
Claeys, Cor, Po-Chun Hsu, Y. Mols, et al.. (2020). Electrical Activity of Extended Defects in Relaxed In x Ga 1−x As Hetero-Epitaxial Layers. ECS Journal of Solid State Science and Technology. 9(3). 33001–33001. 3 indexed citations
5.
Claeys, Cor, Po-Chun Hsu, Y. Mols, et al.. (2019). Are Extended Defects a Show Stopper for Future III-V CMOS Technologies. Journal of Physics Conference Series. 1190(1). 12001–12001. 1 indexed citations
6.
Vais, Abhitosh, Liesbeth Witters, Y. Mols, et al.. (2019). First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering. VUBIR (Vrije Universiteit Brussel). 9.1.1–9.1.4. 18 indexed citations
7.
Mols, Y., Janusz Bogdanowicz, Paola Favia, et al.. (2019). Structural analysis and resistivity measurements of InAs and GaSb fins on 300 mm Si for vertical (T)FET. Journal of Applied Physics. 125(24). 11 indexed citations
8.
Guo, Weiming, Y. Mols, Jürgen Belz, et al.. (2017). Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates. Journal of Applied Physics. 122(2). 14 indexed citations
9.
Yoshida, Shinichi, Nadine Collaert, Aaron Thean, et al.. (2017). High Mobility In0.53Ga0.47As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes. IEEE Journal of the Electron Devices Society. 5(6). 480–484. 3 indexed citations
10.
Kunert, Bernardette, Weiming Guo, Y. Mols, et al.. (2016). III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate. Applied Physics Letters. 109(9). 76 indexed citations
11.
12.
Mols, Y., Devin Verreck, Anne S. Verhulst, et al.. (2016). InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature. Applied Physics Letters. 109(24). 40 indexed citations
13.
Mols, Y., et al.. (2016). Study towards integration of In0.53Ga0.47As on 300 mm Si for CMOS sub-7 nm node: Development of thin graded In Ga1−As buffers on GaAs. Journal of Crystal Growth. 452. 244–247. 7 indexed citations
14.
Martino, João Antônio, Paula Ghedini Der Agopian, A. Alian, et al.. (2016). Analog parameters of solid source Zn diffusion InXGa1−XAs nTFETs down to 10 K. Semiconductor Science and Technology. 31(12). 124001–124001. 2 indexed citations
15.
Ji, Zhigang, D. Linten, Roman Boschke, et al.. (2015). ESD characterization of planar InGaAs devices. 3F.1.1–3F.1.7. 1 indexed citations
16.
17.
Zhou, X., A. Alian, Y. Mols, et al.. (2014). In<inf>0.53</inf>Ga<inf>0.47</inf>As quantum-well MOSFET with source/drain regrowth for low power logic applications. 92. 1–2. 7 indexed citations
18.
Brammertz, Guy, Marie Buffière, Yi Ren, et al.. (2013). Correlation between physical, electrical, and optical properties of Cu2ZnSnSe4 based solar cells. Applied Physics Letters. 102(1). 49 indexed citations
19.
Zhao, Lina, et al.. (2010). 6-Terminal Mechanically Stacked Multi-Junction Solar Cells. EU PVSEC. 969–972. 1 indexed citations
20.
Brammertz, Guy, Matty Caymax, Marc Meuris, et al.. (2008). GaAs on Ge for CMOS. Thin Solid Films. 517(1). 148–151. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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