Michel Houssa

12.0k total citations · 2 hit papers
341 papers, 9.6k citations indexed

About

Michel Houssa is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Michel Houssa has authored 341 papers receiving a total of 9.6k indexed citations (citations by other indexed papers that have themselves been cited), including 227 papers in Electrical and Electronic Engineering, 151 papers in Materials Chemistry and 107 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Michel Houssa's work include Semiconductor materials and devices (189 papers), Advancements in Semiconductor Devices and Circuit Design (113 papers) and Graphene research and applications (56 papers). Michel Houssa is often cited by papers focused on Semiconductor materials and devices (189 papers), Advancements in Semiconductor Devices and Circuit Design (113 papers) and Graphene research and applications (56 papers). Michel Houssa collaborates with scholars based in Belgium, France and United States. Michel Houssa's co-authors include A. Stesmans, V. V. Afanas’ev, Geoffrey Pourtois, M. M. Heyns, Emilio Scalise, Marc Heyns, Alessandro Molle, V. V. Afanas’ev, Marcel Ausloos and Matty Caymax and has published in prestigious journals such as Physical Review Letters, Advanced Materials and The Journal of Chemical Physics.

In The Last Decade

Michel Houssa

335 papers receiving 9.3k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Buckled two-dimensional Xene sheets

2017 636 citations Alessandro Molle, Michel Houssa et al. profile →
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

2011 578 citations Emilio Scalise, Michel Houssa et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Michel Houssa Belgium	46	5.9k	5.8k	2.7k	987	692	341	9.6k
H. Kalt Germany	42	3.7k 0.6×	3.7k 0.6×	3.0k 1.1×	1.1k 1.1×	536 0.8×	332	6.8k
Alexander A. Demkov United States	47	5.0k 0.9×	5.9k 1.0×	1.9k 0.7×	2.2k 2.2×	808 1.2×	262	8.4k
Ludger Wirtz Luxembourg	45	2.8k 0.5×	6.4k 1.1×	1.9k 0.7×	645 0.7×	330 0.5×	130	7.6k
G. Bacher Germany	43	3.8k 0.7×	4.2k 0.7×	3.7k 1.4×	651 0.7×	594 0.9×	297	6.8k
Didier Mayou France	33	3.1k 0.5×	6.9k 1.2×	2.6k 1.0×	1.1k 1.1×	582 0.8×	128	8.6k
Ji Feng China	46	4.2k 0.7×	8.1k 1.4×	2.4k 0.9×	2.1k 2.1×	910 1.3×	153	10.4k
M. Copel United States	52	7.3k 1.2×	4.5k 0.8×	3.5k 1.3×	834 0.8×	438 0.6×	159	9.6k
Inocencio R. Martín Spain	48	4.6k 0.8×	6.8k 1.2×	1.7k 0.6×	581 0.6×	306 0.4×	286	7.8k
Liangmo Mei China	37	2.4k 0.4×	3.6k 0.6×	1.5k 0.6×	1.8k 1.8×	618 0.9×	262	5.6k
C. Klingshirn Germany	42	4.9k 0.8×	6.7k 1.2×	4.1k 1.5×	1.9k 1.9×	691 1.0×	335	9.8k

Countries citing papers authored by Michel Houssa

Since Specialization

Citations

This map shows the geographic impact of Michel Houssa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Michel Houssa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Michel Houssa more than expected).

Fields of papers citing papers by Michel Houssa

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Michel Houssa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Michel Houssa. The network helps show where Michel Houssa may publish in the future.

Co-authorship network of co-authors of Michel Houssa

This figure shows the co-authorship network connecting the top 25 collaborators of Michel Houssa. A scholar is included among the top collaborators of Michel Houssa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Michel Houssa. Michel Houssa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Davis, Jesse, et al.. (2024). Machine Learning-Based Universal Threshold Voltage Extraction of Transistors Using Convolutional Neural Networks. IEEE Transactions on Semiconductor Manufacturing. 37(4). 615–619. 1 indexed citations

Homm, Pía, Noriyuki Uchida, Mariela Menghini, et al.. (2023). Raman spectroscopy and phonon dynamics in strained V2O3. Physical Review Materials. 7(7). 3 indexed citations

Pourtois, Geoffrey, et al.. (2023). Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study. npj 2D Materials and Applications. 7(1). 15 indexed citations

Meng, Ruishen, L. M. C. Pereira, Jean‐Pierre Locquet, et al.. (2022). Hole-doping induced ferromagnetism in 2D materials. npj Computational Materials. 8(1). 33 indexed citations

Iakoubovskii, Konstantin, Abhinav Gaur, Dennis Lin, et al.. (2021). Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra. Journal of Applied Physics. 129(15). 8 indexed citations

Asselberghs, Inge, Cedric Huyghebaert, Iuliana Radu, et al.. (2021). Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures. Journal of Physics D Applied Physics. 54(29). 295101–295101. 2 indexed citations

Meng, Ruishen, Mariela Menghini, Valeri Afanasiev, et al.. (2021). Two-dimensional honeycomb-kagome V2O3: a robust room-temperature magnetic Chern insulator interfaced with graphene. arXiv (Cornell University). 16 indexed citations

Amorim, Carlos O., Nuno M. Fortunato, João P. Araújo, et al.. (2020). Hg adatoms on graphene: A first-principles study. Journal of Physics Materials. 4(1). 15002–15002. 1 indexed citations

Mortelmans, Wouter, Ankit Nalin Mehta, Yashwanth Balaji, et al.. (2020). On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides. ACS Applied Materials & Interfaces. 12(24). 27508–27517. 27 indexed citations

10.

Mortelmans, Wouter, Ankit Nalin Mehta, Yashwanth Balaji, et al.. (2020). Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe ₂. 2D Materials. 7(2). 25027–25027. 14 indexed citations

11.

Afanas’ev, V. V., Daniele Chiappe, Michel Houssa, et al.. (2018). Impact of MoS ₂ layer transfer on electrostatics of MoS ₂ /SiO ₂ interface. Nanotechnology. 30(5). 55702–55702. 13 indexed citations

12.

Mehta, Ankit Nalin, Haodong Zhang, Olivier Richard, et al.. (2017). Structural characterization of SnS crystals formed by chemical vapour deposition. Journal of Microscopy. 268(3). 276–287. 18 indexed citations

13.

Luisier, Mathieu, et al.. (2017). 多層MoS 2 に基づくトランジスタで実現した静電的制御について: 第一原理研究. Journal of Applied Physics. 121(4). 44505–44505. 1 indexed citations

14.

Iordanidou, Konstantina, Michel Houssa, Bas van den Broek, et al.. (2016). Impact of point defects on the electronic and transport properties of silicene nanoribbons. Journal of Physics Condensed Matter. 28(3). 35302–35302. 32 indexed citations

15.

Belmonte, Attilio, A. Fantini, A. Redolfi, et al.. (2015). Excellent R_off/R_on ratio and short programming time in Cu/Al₂O₃‐based conductive‐bridging RAM under low‐current (10 μA) operation. physica status solidi (a). 213(2). 302–305. 12 indexed citations

16.

Homm, Pía, Mariela Menghini, Cheng‐Yong Su, et al.. (2015). Publisher's Note: “Collapse of the low temperature insulating state in Cr-doped V2O3 thin films” [Appl. Phys. Lett. 107, 111904 (2015)]. Applied Physics Letters. 107(14). 2 indexed citations

17.

Homm, Pía, Mariela Menghini, Cheng‐Yong Su, et al.. (2015). Collapse of the low temperature insulating state in Cr-doped V2O3 thin films. Applied Physics Letters. 107(11). 13 indexed citations

18.

Houssa, Michel, A. Dimoulas, & Alessandro Molle. (2015). Silicene: a review of recent experimental and theoretical investigations. Journal of Physics Condensed Matter. 27(25). 253002–253002. 200 indexed citations

19.

Houssa, Michel, Bas van den Broek, Emilio Scalise, et al.. (2013). An electric field tunable energy band gap at silicene/(0001) ZnS interfaces. Physical Chemistry Chemical Physics. 15(11). 3702–3702. 82 indexed citations

20.

Mitard, Jérôme, Michel Houssa, Geert Eneman, et al.. (2006). Impact of EOT scaling down to 0.85nm on 70nm Ge-pFETs technology with STI. Symposium on VLSI Technology. 82–83. 35 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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