Abhitosh Vais

473 total citations
46 papers, 291 citations indexed

About

Abhitosh Vais is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Abhitosh Vais has authored 46 papers receiving a total of 291 indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Abhitosh Vais's work include Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). Abhitosh Vais is often cited by papers focused on Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers) and Integrated Circuits and Semiconductor Failure Analysis (10 papers). Abhitosh Vais collaborates with scholars based in Belgium, Russia and United States. Abhitosh Vais's co-authors include Nadine Collaert, Aaron Thean, J. Franco, Dennis Lin, V. Putcha, A. Mocuta, Koen Martens, G. Groeseneken, Sonja Sioncke and K. De Meyer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Abhitosh Vais

42 papers receiving 285 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Abhitosh Vais Belgium 10 264 67 47 35 21 46 291
Shivendra Upadhyay Denmark 6 51 0.2× 32 0.5× 58 1.2× 49 1.4× 5 0.2× 7 144
Christoph Luderer Germany 11 352 1.3× 117 1.7× 129 2.7× 18 0.5× 7 0.3× 15 374
Elmar Mitterreiter Germany 4 156 0.6× 251 3.7× 50 1.1× 43 1.2× 19 0.9× 6 308
Tarek M. Abdolkader Egypt 10 365 1.4× 162 2.4× 108 2.3× 52 1.5× 7 0.3× 36 410
Jie Su China 9 170 0.6× 342 5.1× 45 1.0× 29 0.8× 3 0.1× 13 366
C. H. Cheng Taiwan 9 260 1.0× 122 1.8× 13 0.3× 31 0.9× 4 0.2× 26 278
Jiefu Yang Singapore 11 102 0.4× 173 2.6× 15 0.3× 21 0.6× 7 0.3× 16 228
Ching-Sung Ho China 6 268 1.0× 33 0.5× 16 0.3× 43 1.2× 7 284
Peter Buehlmann Switzerland 6 316 1.2× 209 3.1× 21 0.4× 42 1.2× 21 1.0× 9 330

Countries citing papers authored by Abhitosh Vais

Since Specialization
Citations

This map shows the geographic impact of Abhitosh Vais's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Abhitosh Vais with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Abhitosh Vais more than expected).

Fields of papers citing papers by Abhitosh Vais

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Abhitosh Vais. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Abhitosh Vais. The network helps show where Abhitosh Vais may publish in the future.

Co-authorship network of co-authors of Abhitosh Vais

This figure shows the co-authorship network connecting the top 25 collaborators of Abhitosh Vais. A scholar is included among the top collaborators of Abhitosh Vais based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Abhitosh Vais. Abhitosh Vais is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Vais, Abhitosh, et al.. (2025). Comparative cradle-to-gate LCA of RF power amplifiers for user equipment. Nanotechnology. 36(47). 475203–475203. 1 indexed citations
2.
Kumar, Annie, Abhitosh Vais, G. Boccardi, et al.. (2024). An Adaptable In(Ga)P/Ga(Sb)As/Ga(In)As HBT Technology on 300 mm Si for RF Applications. VUBIR (Vrije Universiteit Brussel). 940–943.
3.
Vais, Abhitosh, Po-Chun Hsu, Hao Yu, et al.. (2021). A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies. Ghent University Academic Bibliography (Ghent University). 1–5. 1 indexed citations
4.
Vais, Abhitosh, Liesbeth Witters, Y. Mols, et al.. (2021). DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates. VUBIR (Vrije Universiteit Brussel). 89–92. 3 indexed citations
5.
Vais, Abhitosh, Liesbeth Witters, Y. Mols, et al.. (2019). First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering. VUBIR (Vrije Universiteit Brussel). 9.1.1–9.1.4. 18 indexed citations
6.
Horiguchi, Naoto, D. Mocuta, Nadine Collaert, et al.. (2019). Effective Contact Resistivity Reduction for Mo/Pd/n-In0.53Ga0.47 as Contact. IEEE Electron Device Letters. 40(11). 1800–1803. 3 indexed citations
7.
Yoshida, Shinichi, Nadine Collaert, Aaron Thean, et al.. (2017). High Mobility In0.53Ga0.47As MOSFETs With Steep Sub-Threshold Slope Achieved by Remote Reduction of Native III-V Oxides With Metal Electrodes. IEEE Journal of the Electron Devices Society. 5(6). 480–484. 3 indexed citations
8.
Vais, Abhitosh, J. Franco, Koen Martens, et al.. (2017). A New Quality Metric for III–V/High-k MOS Gate Stacks Based on the Frequency Dispersion of Accumulation Capacitance and the CET. IEEE Electron Device Letters. 38(3). 318–321. 12 indexed citations
9.
Rakshit, Titash, B. Obradovic, Mirco Cantoro, et al.. (2017). A New Direction for III–V FETs for Mobile CPU Operation Including Burst-Mode: In0.35Ga0.65As Channel. IEEE Electron Device Letters. 38(3). 314–317. 2 indexed citations
10.
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12.
Franco, J., B. Kaczer, Abhitosh Vais, et al.. (2016). Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs. MRS Advances. 1(49). 3329–3340. 3 indexed citations
13.
Taur, Yuan, Hanping Chen, Qian Xie, et al.. (2015). A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors. IEEE Transactions on Electron Devices. 62(3). 813–820. 7 indexed citations
14.
15.
Sioncke, Sonja, Laura Nyns, Dennis Lin, et al.. (2014). Engineering the III-V Gate Stack Properties by Optimization of the ALD Process. ECS Transactions. 64(9). 133–144. 7 indexed citations
16.
Vais, Abhitosh, et al.. (2014). Effect of the variable profile of substrate conductivity on the dynamics of metal deposition on resistive tape. Journal of Electroanalytical Chemistry. 727. 47–52. 3 indexed citations
17.
Vais, Abhitosh, et al.. (2011). Microwave shielding properties of fiber materials. 7. 172–175. 2 indexed citations
18.
Vais, Abhitosh, et al.. (2007). Silver dissolution in acid thiocarbamide solutions containing sulfide ions. Russian Journal of Electrochemistry. 43(3). 288–295. 5 indexed citations
19.
Vais, Abhitosh, et al.. (2006). Anodic behavior of gold in acid thiourea solutions: A cyclic voltammetry and quartz microgravimetry study. Russian Journal of Electrochemistry. 42(3). 239–244. 9 indexed citations
20.
Vais, Abhitosh, et al.. (2004). Copper in Acid Chloride Solutions: Electrochemical Behavior by Quartz Microgravimetry and Voltammetry. Russian Journal of Electrochemistry. 40(7). 755–759. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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