Antoon Theuwis

546 total citations
25 papers, 393 citations indexed

About

Antoon Theuwis is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Antoon Theuwis has authored 25 papers receiving a total of 393 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Antoon Theuwis's work include Silicon and Solar Cell Technologies (10 papers), Semiconductor materials and devices (10 papers) and Semiconductor materials and interfaces (9 papers). Antoon Theuwis is often cited by papers focused on Silicon and Solar Cell Technologies (10 papers), Semiconductor materials and devices (10 papers) and Semiconductor materials and interfaces (9 papers). Antoon Theuwis collaborates with scholars based in Belgium, Poland and Lithuania. Antoon Theuwis's co-authors include Igor Romandic, Ben Depuydt, W. P. Gomes, Marc Meuris, Katrien Strubbe, Jan Van Steenbergen, P. Clauws, Jan Vanhellemont, Sonja Sioncke and Eddy Simoen and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Physical Chemistry Chemical Physics.

In The Last Decade

Antoon Theuwis

25 papers receiving 388 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Antoon Theuwis Belgium 12 296 152 140 89 54 25 393
J.P. Lu United States 13 244 0.8× 240 1.6× 240 1.7× 73 0.8× 49 0.9× 31 518
H. K. Yow Malaysia 10 319 1.1× 197 1.3× 115 0.8× 42 0.5× 45 0.8× 46 411
G. Quintana Argentina 10 283 1.0× 159 1.0× 90 0.6× 51 0.6× 40 0.7× 17 364
H. Katsumata Japan 11 291 1.0× 127 0.8× 236 1.7× 62 0.7× 26 0.5× 50 408
J. Lindner Germany 12 219 0.7× 187 1.2× 59 0.4× 60 0.7× 83 1.5× 47 373
Hiroaki Iwakuro Japan 10 300 1.0× 141 0.9× 78 0.6× 30 0.3× 53 1.0× 22 384
H.-S. Tao United States 7 130 0.4× 167 1.1× 213 1.5× 59 0.7× 29 0.5× 10 355
E. Franke Germany 12 200 0.7× 181 1.2× 77 0.6× 54 0.6× 71 1.3× 13 361
Michail Michailov Bulgaria 11 91 0.3× 145 1.0× 132 0.9× 68 0.8× 17 0.3× 27 315
Gy. J. Kovács Hungary 12 142 0.5× 263 1.7× 48 0.3× 56 0.6× 41 0.8× 18 368

Countries citing papers authored by Antoon Theuwis

Since Specialization
Citations

This map shows the geographic impact of Antoon Theuwis's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Antoon Theuwis with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Antoon Theuwis more than expected).

Fields of papers citing papers by Antoon Theuwis

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Antoon Theuwis. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Antoon Theuwis. The network helps show where Antoon Theuwis may publish in the future.

Co-authorship network of co-authors of Antoon Theuwis

This figure shows the co-authorship network connecting the top 25 collaborators of Antoon Theuwis. A scholar is included among the top collaborators of Antoon Theuwis based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Antoon Theuwis. Antoon Theuwis is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Sioncke, Sonja, Marcel Lux, Wim Fyen, et al.. (2007). Particle Deposition and Removal from Ge Wafers. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 134. 173–176. 2 indexed citations
2.
Gaubas, E., Jan Vanhellemont, Eddy Simoen, Antoon Theuwis, & P. Clauws. (2007). On the Impact of Metal Impurities on the Carrier Lifetime in N-type Germanium. MRS Proceedings. 994. 3 indexed citations
3.
Simoen, Eddy, C. Claeys, Sonja Sioncke, et al.. (2007). Lifetime and leakage current considerations in metal-doped germanium. Journal of Materials Science Materials in Electronics. 18(7). 799–804. 12 indexed citations
4.
Clauws, P., Johan Lauwaert, Eddy Simoen, et al.. (2007). Deep level transient spectroscopy of transition metal impurities in germanium. Physica B Condensed Matter. 401-402. 188–191. 18 indexed citations
5.
Leys, Frederik, et al.. (2006). Ge Epitaxy on (100) Ge: High Growth Rates at Low Temperature from GeH4 using N2 as a Carrier Gas. ECS Transactions. 3(7). 209–210. 1 indexed citations
6.
Forment, Stefaan, Jan Vanhellemont, P. Clauws, et al.. (2006). A deep-level transient spectroscopy study of transition metals in n-type germanium. Materials Science in Semiconductor Processing. 9(4-5). 559–563. 18 indexed citations
7.
Depuydt, Ben, Antoon Theuwis, & Igor Romandic. (2006). Germanium: From the first application of Czochralski crystal growth to large diameter dislocation-free wafers. Materials Science in Semiconductor Processing. 9(4-5). 437–443. 86 indexed citations
8.
Theuwis, Antoon, et al.. (2006). Anodic and Electroless Etching of Germanium in Alkaline Hexacyanoferrate Solutions. Journal of The Electrochemical Society. 153(5). C289–C289. 2 indexed citations
9.
Leys, Frederik, B. Kaczer, Tom Janssens, et al.. (2006). Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality. Materials Science in Semiconductor Processing. 9(4-5). 679–684. 41 indexed citations
10.
Onsia, Bart, Thierry Conard, Stefan De Gendt, et al.. (2005). A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 103-104. 27–30. 67 indexed citations
11.
Vanhellemont, Jan, Dirk Poelman, P. Clauws, et al.. (2005). Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals. Applied Physics Letters. 87(6). 22 indexed citations
12.
Vanhellemont, Jan, P. Vanmeerbeek, Dirk Poelman, et al.. (2004). Grown-In Lattice Defects and Diffusion in Czochralski-Grown Germanium. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 230-232. 149–176. 17 indexed citations
13.
Gomes, W. P., et al.. (2003). Subbandgap Photoluminescence and Electroluminescence at n-GaN Electrodes in Aqueous Solutions. Journal of The Electrochemical Society. 150(10). G602–G602. 3 indexed citations
14.
Theuwis, Antoon, et al.. (2002). A (Photo‐)Electrochemical Study on n‐GaN in Aqueous Solutions. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 448–452. 5 indexed citations
15.
Theuwis, Antoon, et al.. (2002). A Photoelectrochemical Study of In[sub x]Ga[sub 1−x]N Films. Journal of The Electrochemical Society. 149(5). E173–E173. 13 indexed citations
16.
Theuwis, Antoon, et al.. (2002). Photoelectrochemical reactions at the n-GaN electrode in 1 M H2SO4 and in acidic solutions containing Cl– ions. Physical Chemistry Chemical Physics. 4(11). 2301–2306. 28 indexed citations
17.
Theuwis, Antoon, Katrien Strubbe, & W. P. Gomes. (2001). A photoelectrochemical study of InxGa1-xN films. Ghent University Academic Bibliography (Ghent University). 110–119. 3 indexed citations
18.
Theuwis, Antoon & W. P. Gomes. (1999). Electrochemical and Etching Behavior of InP and In0.53Ga0.47As in Alkaline Hypobromite Solutions. Journal of The Electrochemical Society. 146(5). 1903–1909. 1 indexed citations
19.
Theuwis, Antoon, et al.. (1999). On the Selective Etching of In0.53Ga0.47As and In0.72Ga0.28As0.61 P 0.39 vs. InP in Alkaline  K 3Fe (  CN  ) 6 Solutions: An Electrochemical Study. Journal of The Electrochemical Society. 146(3). 1172–1180. 3 indexed citations
20.
Theuwis, Antoon, et al.. (1996). Chemical and electrochemical interaction of acidic H2O2 solutions with (100) InP. Journal of Electroanalytical Chemistry. 410(1). 31–42. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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