V. Putcha

751 total citations
42 papers, 542 citations indexed

About

V. Putcha is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, V. Putcha has authored 42 papers receiving a total of 542 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 14 papers in Condensed Matter Physics and 6 papers in Materials Chemistry. Recurrent topics in V. Putcha's work include Semiconductor materials and devices (38 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and GaN-based semiconductor devices and materials (14 papers). V. Putcha is often cited by papers focused on Semiconductor materials and devices (38 papers), Advancements in Semiconductor Devices and Circuit Design (24 papers) and GaN-based semiconductor devices and materials (14 papers). V. Putcha collaborates with scholars based in Belgium, United States and Austria. V. Putcha's co-authors include Nadine Collaert, Bertrand Parvais, D. Linten, J. Franco, Niamh Waldron, B. Kaczer, A. Alian, Pieter Weckx, G. Groeseneken and Uthayasankaran Peralagu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

V. Putcha

41 papers receiving 525 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Putcha Belgium 13 495 151 87 56 51 42 542
Raghunandan Swain India 13 244 0.5× 217 1.4× 72 0.8× 58 1.0× 110 2.2× 46 366
Yat Hon Ng Hong Kong 12 243 0.5× 200 1.3× 37 0.4× 43 0.8× 88 1.7× 22 300
Maryline Bawedin France 12 393 0.8× 110 0.7× 45 0.5× 34 0.6× 52 1.0× 40 424
Zhicheng Wu Belgium 9 237 0.5× 111 0.7× 34 0.4× 34 0.6× 47 0.9× 33 278
H. Takauchi Japan 12 305 0.6× 56 0.4× 106 1.2× 24 0.4× 52 1.0× 24 376
X. Garros France 18 998 2.0× 56 0.4× 128 1.5× 137 2.4× 48 0.9× 105 1.0k
Yuichi Yamazaki Japan 11 185 0.4× 29 0.2× 199 2.3× 150 2.7× 43 0.8× 40 335
Xiaoxuan Zhao China 6 249 0.5× 26 0.2× 50 0.6× 219 3.9× 76 1.5× 8 329
Ru-Ying Tong China 7 234 0.5× 81 0.5× 92 1.1× 359 6.4× 160 3.1× 11 416
Kotb Jabeur France 10 274 0.6× 28 0.2× 60 0.7× 238 4.3× 76 1.5× 27 383

Countries citing papers authored by V. Putcha

Since Specialization
Citations

This map shows the geographic impact of V. Putcha's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Putcha with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Putcha more than expected).

Fields of papers citing papers by V. Putcha

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Putcha. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Putcha. The network helps show where V. Putcha may publish in the future.

Co-authorship network of co-authors of V. Putcha

This figure shows the co-authorship network connecting the top 25 collaborators of V. Putcha. A scholar is included among the top collaborators of V. Putcha based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Putcha. V. Putcha is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yu, Hao, V. Putcha, Uthayasankaran Peralagu, et al.. (2022). Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures. Journal of Applied Physics. 131(3). 6 indexed citations
2.
Wu, Weimin, Ming‐Dou Ker, Shih‐Hung Chen, et al.. (2022). ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs. IEEE Transactions on Electron Devices. 69(4). 2180–2187. 5 indexed citations
3.
Alian, A., R. Rodríguez, Uthayasankaran Peralagu, et al.. (2022). Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. 384–387. 9 indexed citations
4.
Wu, Weimin, Shih‐Hung Chen, V. Putcha, et al.. (2021). ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications. 1–7. 6 indexed citations
5.
O’Sullivan, Barry, V. Putcha, V. V. Afanas’ev, et al.. (2020). Defect profiling in FEFET Si:HfO2 layers. Applied Physics Letters. 117(20). 25 indexed citations
6.
Takakura, Kenichiro, V. Putcha, Eddy Simoen, et al.. (2020). Parasitic subthreshold drain current and low frequency noise in GaN/AlGaN metal-oxide-semiconductor high-electron-mobility field-effect-transistors. Semiconductor Science and Technology. 36(2). 24003–24003. 2 indexed citations
7.
Parvais, Bertrand, A. Alian, Uthayasankaran Peralagu, et al.. (2020). GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL. 19 indexed citations
8.
Takakura, Kenichiro, V. Putcha, Eddy Simoen, et al.. (2020). Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation. IEEE Transactions on Electron Devices. 67(8). 3062–3068. 24 indexed citations
9.
Bonaldo, Stefano, En Xia Zhang, V. Putcha, et al.. (2019). Total-Ionizing-Dose Effects in InGaAs MOSFETs With High-k Gate Dielectrics and InP Substrates. IEEE Transactions on Nuclear Science. 67(7). 1312–1319. 5 indexed citations
10.
Peralagu, Uthayasankaran, A. Alian, V. Putcha, et al.. (2019). CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance. VUBIR (Vrije Universiteit Brussel). 17.2.1–17.2.4. 61 indexed citations
11.
Weckx, Pieter, Julien Ryckaert, V. Putcha, et al.. (2017). Stacked nanosheet fork architecture for SRAM design and device co-optimization toward 3nm. 20.5.1–20.5.4. 39 indexed citations
12.
Vais, Abhitosh, J. Franco, Koen Martens, et al.. (2017). A New Quality Metric for III–V/High-k MOS Gate Stacks Based on the Frequency Dispersion of Accumulation Capacitance and the CET. IEEE Electron Device Letters. 38(3). 318–321. 12 indexed citations
13.
Ivanov, Ts., V. Putcha, A. Alian, et al.. (2017). Record performance Top-down In<inf>0.53</inf>Ga<inf>0.47</inf>As vertical nanowire FETs and vertical nanosheets. 17.1.1–17.1.4. 6 indexed citations
14.
15.
16.
Kaczer, B., J. Franco, Pieter Weckx, et al.. (2016). The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits. Solid-State Electronics. 125. 52–62. 18 indexed citations
17.
Franco, J., B. Kaczer, Abhitosh Vais, et al.. (2016). Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs. MRS Advances. 1(49). 3329–3340. 3 indexed citations
18.
Putcha, V., Marko Simicic, Pieter Weckx, et al.. (2015). Smart-array for pipelined BTI characterization. 95–98. 8 indexed citations
19.
Degraeve, R., Sergiu Clima, V. Putcha, et al.. (2015). Statistical poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels. 5.6.1–5.6.4. 31 indexed citations
20.
Putcha, V., E. Bury, Pieter Weckx, et al.. (2014). Design and simulation of on-chip circuits for parallel characterization of ultrascaled transistors for BTI reliability. Lirias (KU Leuven). 99–102. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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