Simone Gerardin

3.7k total citations
196 papers, 2.9k citations indexed

About

Simone Gerardin is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Computer Networks and Communications. According to data from OpenAlex, Simone Gerardin has authored 196 papers receiving a total of 2.9k indexed citations (citations by other indexed papers that have themselves been cited), including 191 papers in Electrical and Electronic Engineering, 23 papers in Hardware and Architecture and 19 papers in Computer Networks and Communications. Recurrent topics in Simone Gerardin's work include Semiconductor materials and devices (144 papers), Radiation Effects in Electronics (129 papers) and Integrated Circuits and Semiconductor Failure Analysis (66 papers). Simone Gerardin is often cited by papers focused on Semiconductor materials and devices (144 papers), Radiation Effects in Electronics (129 papers) and Integrated Circuits and Semiconductor Failure Analysis (66 papers). Simone Gerardin collaborates with scholars based in Italy, Netherlands and Switzerland. Simone Gerardin's co-authors include A. Paccagnella, Marta Bagatin, F. Faccio, A. Visconti, Silvia Beltrami, Stefano Bonaldo, G. Cellere, S. Mattiazzo, Stefano Michelis and Christopher Frost and has published in prestigious journals such as Applied Physics Letters, ACS Applied Materials & Interfaces and Optics Express.

In The Last Decade

Simone Gerardin

185 papers receiving 2.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Simone Gerardin Italy 27 2.7k 360 271 213 203 196 2.9k
V. Ferlet-Cavrois France 34 3.3k 1.2× 693 1.9× 94 0.3× 201 0.9× 145 0.7× 114 3.4k
Marta Bagatin Italy 22 1.4k 0.5× 214 0.6× 241 0.9× 124 0.6× 122 0.6× 123 1.6k
Timothy R. Oldham United States 28 3.3k 1.2× 259 0.7× 121 0.4× 156 0.7× 351 1.7× 83 3.4k
Cheryl J. Marshall United States 23 1.8k 0.7× 271 0.8× 53 0.2× 167 0.8× 93 0.5× 84 2.0k
A.B. Campbell United States 29 2.5k 0.9× 435 1.2× 61 0.2× 174 0.8× 123 0.6× 132 2.7k
David F. Heidel United States 20 1.0k 0.4× 379 1.1× 62 0.2× 145 0.7× 54 0.3× 54 1.2k
F.W. Sexton United States 34 3.1k 1.2× 555 1.5× 49 0.2× 205 1.0× 192 0.9× 81 3.2k
J. Félix United States 22 1.8k 0.7× 374 1.0× 34 0.1× 91 0.4× 133 0.7× 56 1.9k
J. Baggio France 28 1.6k 0.6× 319 0.9× 25 0.1× 213 1.0× 163 0.8× 77 1.8k
Frédéric Saigné France 25 1.8k 0.7× 386 1.1× 35 0.1× 323 1.5× 157 0.8× 192 2.0k

Countries citing papers authored by Simone Gerardin

Since Specialization
Citations

This map shows the geographic impact of Simone Gerardin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Simone Gerardin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Simone Gerardin more than expected).

Fields of papers citing papers by Simone Gerardin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Simone Gerardin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Simone Gerardin. The network helps show where Simone Gerardin may publish in the future.

Co-authorship network of co-authors of Simone Gerardin

This figure shows the co-authorship network connecting the top 25 collaborators of Simone Gerardin. A scholar is included among the top collaborators of Simone Gerardin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Simone Gerardin. Simone Gerardin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bagatin, Marta, Simone Gerardin, Mujtaba Zahidy, et al.. (2025). Radiation hardness properties and DCR reduction via laser annealing of InGaAs/InP SPADs for space applications. Optics Express. 33(23). 47876–47876.
2.
Bonaldo, Stefano, G. Borghello, F. Faccio, et al.. (2024). TID Effects in the Lateral STI Oxide of Planar CMOS Transistors. IEEE Transactions on Nuclear Science. 72(8). 2264–2275. 2 indexed citations
3.
Bonaldo, Stefano, C. Martinella, Marta Bagatin, et al.. (2024). Total-Ionizing-Dose and Displacement Damage Effects in Trench SiC Power MOSFETs. IEEE Transactions on Nuclear Science. 72(8). 2324–2332. 1 indexed citations
4.
Martinella, C., Stefano Bonaldo, Marta Bagatin, et al.. (2024). Displacement Damage and Total Ionizing Dose Induced by 3-MeV Protons in SiC Vertical Power MOSFETs. IEEE Transactions on Nuclear Science. 72(4). 1259–1267. 3 indexed citations
5.
Bonaldo, Stefano, Hugh Barnaby, G. Borghello, et al.. (2023). Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs. IEEE Transactions on Nuclear Science. 71(4). 427–436. 7 indexed citations
6.
Bonaldo, Stefano, et al.. (2023). Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs. Electronics. 12(3). 543–543. 4 indexed citations
7.
Bonaldo, Stefano, Pan Wang, Rong Jiang, et al.. (2019). Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si. IEEE Transactions on Nuclear Science. 66(7). 1599–1605. 19 indexed citations
8.
Bonaldo, Stefano, Simone Gerardin, Xiaoming Jin, et al.. (2019). Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses. IEEE Transactions on Nuclear Science. 66(7). 1574–1583. 36 indexed citations
9.
González‐Castaño, Diego M., Simone Gerardin, Marta Bagatin, et al.. (2019). Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions. Electronics. 8(5). 562–562. 8 indexed citations
10.
Cazzaniga, Carlo, et al.. (2018). Atmospheric-Like Neutron Attenuation During Accelerated Neutron Testing With Multiple Printed Circuit Boards. IEEE Transactions on Nuclear Science. 65(8). 1830–1834. 9 indexed citations
11.
Stockman, A., Alaleh Tajalli, Matteo Meneghini, et al.. (2018). The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors. IEEE Transactions on Electron Devices. 66(1). 372–377. 19 indexed citations
12.
Borghello, G., F. Faccio, Stefano Michelis, et al.. (2018). Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses. IEEE Transactions on Nuclear Science. 65(8). 1482–1487. 26 indexed citations
13.
Faccio, F., G. Borghello, Daniel M. Fleetwood, et al.. (2017). Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses. IEEE Transactions on Nuclear Science. 65(1). 164–174. 82 indexed citations
14.
Ding, Lili, Simone Gerardin, A. Paccagnella, et al.. (2015). Effects of electrical stress and ionizing radiation on Si-based TFETs. Institutional Research Information System (University of Udine). 137–140. 3 indexed citations
15.
Santi, Carlo De, Matteo Meneghini, Nicola Trivellin, et al.. (2014). Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3 MeV proton irradiation. Applied Physics Letters. 105(21). 11 indexed citations
16.
Gerardin, Simone, Marta Bagatin, A. Paccagnella, et al.. (2014). Neutron and Alpha Single Event Upsets in Advanced NAND Flash Memories. IEEE Transactions on Nuclear Science. 61(4). 1799–1805. 13 indexed citations
17.
Bolchini, Cristiana, Antonio Miele, Marco Ottavi, et al.. (2012). Proceedings - IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems. 5 indexed citations
18.
Gerardin, Simone, M. Bagatin, A. Paccagnella, et al.. (2011). Proton-induced upsets in 41-nm NAND floating gate cells. Research Padua Archive (University of Padua). 191–194. 3 indexed citations
19.
Bagatin, Marta, Simone Gerardin, G. Cellere, et al.. (2010). Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence. IEEE Transactions on Nuclear Science. 57(4). 1835–1841. 32 indexed citations
20.
Griffoni, Alessio, Augusto Tazzoli, Simone Gerardin, et al.. (2008). Electrostatic discharge effects in Fully Depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques. Research Padua Archive (University of Padua). 59–66. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by V. Ferlet-Cavrois Breakdown of academic impact, for papers by Marta Bagatin Breakdown of academic impact, for papers by Timothy R. Oldham Breakdown of academic impact, for papers by Cheryl J. Marshall Breakdown of academic impact, for papers by A.B. Campbell Breakdown of academic impact, for papers by David F. Heidel Breakdown of academic impact, for papers by F.W. Sexton Breakdown of academic impact, for papers by J. Félix Breakdown of academic impact, for papers by J. Baggio Breakdown of academic impact, for papers by Frédéric Saigné
Rankless by CCL
2026