M. Sadd

526 total citations
27 papers, 292 citations indexed

About

M. Sadd is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. Sadd has authored 27 papers receiving a total of 292 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 13 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M. Sadd's work include Semiconductor materials and devices (19 papers), Advanced Memory and Neural Computing (10 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). M. Sadd is often cited by papers focused on Semiconductor materials and devices (19 papers), Advanced Memory and Neural Computing (10 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). M. Sadd collaborates with scholars based in United States and Italy. M. Sadd's co-authors include B. E. White, R. Muralidhar, R. A. Rao, G. V. Chester, L. Reatto, C.T. Swift, E.J. Prinz, Jane Yater, M. P. Teter and S.G.H. Anderson and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Journal of Applied Physics.

In The Last Decade

M. Sadd

25 papers receiving 268 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Sadd United States	9	219	168	84	46	15	27	292
I.N. Osiyuk Ukraine	10	303 1.4×	163 1.0×	101 1.2×	69 1.5×	5 0.3×	28	318
E. Simoen Belgium	13	401 1.8×	57 0.3×	104 1.2×	27 0.6×	16 1.1×	35	424
M.C. Habrard France	4	296 1.4×	189 1.1×	36 0.4×	28 0.6×	15 1.0×	6	308
D. Rajavel United States	10	315 1.4×	170 1.0×	160 1.9×	44 1.0×	9 0.6×	22	336
S. Brus Belgium	13	469 2.1×	98 0.6×	86 1.0×	56 1.2×	7 0.5×	48	492
T. Grabolla Germany	10	224 1.0×	63 0.4×	42 0.5×	47 1.0×	6 0.4×	31	263
E. Krätzig Germany	9	264 1.2×	73 0.4×	281 3.3×	24 0.5×	6 0.4×	23	337
Davood Momeni Germany	9	132 0.6×	250 1.5×	145 1.7×	65 1.4×	13 0.9×	14	313
Ganesh Samudra Singapore	15	546 2.5×	165 1.0×	118 1.4×	64 1.4×	7 0.5×	33	567
E. Dentoni Litta Belgium	12	414 1.9×	106 0.6×	53 0.6×	50 1.1×	6 0.4×	69	469

Countries citing papers authored by M. Sadd

Since Specialization

Citations

This map shows the geographic impact of M. Sadd's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Sadd with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Sadd more than expected).

Fields of papers citing papers by M. Sadd

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Sadd. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Sadd. The network helps show where M. Sadd may publish in the future.

Co-authorship network of co-authors of M. Sadd

This figure shows the co-authorship network connecting the top 25 collaborators of M. Sadd. A scholar is included among the top collaborators of M. Sadd based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Sadd. M. Sadd is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Lu, Zhichao, J.G. Fossum, Weimin Zhang, et al.. (2008). A Novel Two-Transistor Floating-Body/Gate Cell for Low-Power Nanoscale Embedded DRAM. IEEE Transactions on Electron Devices. 55(6). 1511–1518. 8 indexed citations

Muralidhar, R., R. A. Rao, M. Sadd, et al.. (2007). Silicon nanocrystal non-volatile memory for embedded memory scaling. Microelectronics Reliability. 47(4-5). 585–592. 29 indexed citations

Fossum, J.G., et al.. (2007). A Novel Two-Transistor Floating-Body Memory Cell. 105–106. 2 indexed citations

Yater, Jane, et al.. (2006). 90nm Split-Gate Nanocrystal Non-Volatile Memory with Reduced Threshold Voltage. 52. 60–61. 5 indexed citations

Mathew, L., M. Sadd, Aaron Thean, et al.. (2006). Multiple Independent Gate Field Effect Transistors Device, Process, Applications. ECS Meeting Abstracts. MA2005-01(12). 563–563. 3 indexed citations

Rao, R. A., M. Sadd, C.T. Swift, et al.. (2005). Silicon nanocrystals: from coulomb blockade to memory arrays. 290–292. 4 indexed citations

Rao, R. A., R. Muralidhar, S.G.H. Anderson, et al.. (2005). Influence of silicon nanocrystal size and density on the performance of non-volatile memory arrays. Solid-State Electronics. 49(11). 1722–1727. 19 indexed citations

Rao, R. A., M. Sadd, C.T. Swift, et al.. (2004). Silicon nanocrystal based memory devices for NVM and DRAM applications. Solid-State Electronics. 48(9). 1463–1473. 66 indexed citations

Mathew, L., Yang Du, Aaron Thean, et al.. (2004). Multi gated device architectures advances, advantages and challenges. 97–98.

10.

Sadd, M., et al.. (2003). Hybrid silicon nanocrystal silicon nitride dynamic random access memory. IEEE Transactions on Nanotechnology. 2(4). 335–340. 25 indexed citations

11.

Rao, R. A., R. Muralidhar, J. Conner, et al.. (2003). Thermal oxidation of silicon nanocrystals in O2 and NO ambient. Journal of Applied Physics. 93(9). 5637–5642. 28 indexed citations

12.

Sadd, M., et al.. (2003). Effects of dopant granularity on superhalo-channel mosfet's according to two- and three-dimensional computer simulations. IEEE Transactions on Nanotechnology. 2(2). 97–101. 3 indexed citations

13.

Ramprasad, Rampi, et al.. (2003). Oxygen vacancy defects in tantalum pentoxide: a density functional study. Microelectronic Engineering. 69(2-4). 190–194. 14 indexed citations

14.

Rao, R. A., M. Sadd, C.T. Swift, et al.. (2003). Hot Carrier Injection/Fowler Nordheim Erase Silicon Nanocrystal Memory Cell. 1 indexed citations

15.

Rao, R. A., R. Muralidhar, M. Sadd, et al.. (2003). Hybrid Silicon Nanocrystal Silicon Nitride Memory. 2 indexed citations

16.

Sadd, M. & M. P. Teter. (2000). A weighted spin density approximation for chemistry: importance of shell partitioning. Journal of Molecular Structure THEOCHEM. 501-502. 147–152. 4 indexed citations

17.

Madhukar, S., José Yeste, J. Conner, et al.. (2000). Oxidation of Silicon Nanocrystals. MRS Proceedings. 638. 1 indexed citations

18.

Sadd, M., G. V. Chester, & Francesco Pederiva. (1998). Variational Study of a 3He Impurity Near a 4He Vortex Core. Journal of Low Temperature Physics. 113(3-4). 603–608. 1 indexed citations

19.

Sadd, M. & M. P. Teter. (1996). Weighted density approximation applied to diatomic molecules. Physical review. B, Condensed matter. 54(19). 13643–13648. 11 indexed citations

20.

Sadd, M., L. Reatto, & G. V. Chester. (1996). Vortex line in bulk4He. Czechoslovak Journal of Physics. 46(S1). 293–294. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact