R. Rai

1.2k citations

17 papers · 761 indexed · h-index 11

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
Materials Chemistry
- Electronic and Structural Properties of Oxides

Papers in

Structural Biology 1
Electrical and Electronic Engineering 13
- Semiconductor materials and devices 12
- Advancements in Semiconductor Devices and Circuit Design 8
- Integrated Circuits and Semiconductor Failure Analysis 7
- Ferroelectric and Negative Capacitance Devices 6
- Advancements in Photolithography Techniques 1

Co-authors: R. I. Hegde D. Roan Dina H. Triyoso B. E. White S. Samavedam H.‐H. Tseng R. Garcia V. Dhandapani
Journals: Journal of The Electrochemical Society (2 papers)IEEE Transactions on Electron Devices (2 papers)Materials Chemistry and Physics (1 paper)Microelectronic Engineering (1 paper)Microscopy and Microanalysis (1 paper)
Partner nations: United States India France

In The Last Decade

R. Rai

14 papers receiving 698 citations

Peers

Countries citing papers authored by R. Rai

Since Specialization

Citations

This map shows the geographic impact of R. Rai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Rai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Rai more than expected).

Fields of papers citing papers by R. Rai

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Rai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Rai. The network helps show where R. Rai may publish in the future.

Co-authorship network

The 25 scholars most cited alongside R. Rai, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R. Rai Line = papers co-authored together R. Rai links everyone, so they are left out of the graph.

All Works

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17 of 17 papers shown

#	Work
1	DFT-based analysis of Janus TiSTe/TiSeTe heterobilayers: Enhanced quantum capacitance and electronic properties for high-performance supercapacitor electrodes Journal of Energy Storage ·照光沢井, R. Rai, Jae-Ahm Park, Alfa Sharma	2026	0
2	Investigating the electronic properties and quantum capacitance of transition metal sulfides MS2 (M = Ti, Mo, W, V, Nb, Ta, Fe, Cu, Co): A DFT study for high-performance supercapacitors Materials Chemistry and Physics ·照光沢井, R. Rai, Mangal S. Yadav, A. L. Sharma	2025	1
3	Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Dina H. Triyoso, R. I. Hegde, Юсеф Н.Ю., R. Gregory, C. Antonani, Marianne Canonico, D. Roan, E.A. Hebert, Graziella Pavon-Djavid, Jian Jiang, R. Rai, V. Kaushik, S. Samavedam, N. Rochat	2007	44
4	Characteristics of Mixed Oxides and Nanolaminates of Atomic Layer Deposited HfO[sub 2]–TiO[sub 2] Gate Dielectrics Journal of The Electrochemical Society ·Dina H. Triyoso, R. I. Hegde, S.A. Ellepola, M. W. Stoker, R. Rai, Michael Ramon, B. E. White, Philip J. Tobin	2006	23
5	Performance and Variability Comparisons between Multi-Gate FETs and Planar SOI Transistors A. V-Y. Thean, Alfian Indrawan, L. Mathew, ラリーフェネル, Vanna Piemonte, C. Parker, T. White, M. W. Stoker, L. Prabhu, H. Van Paemel, B.-Y. Nguyen, Sharon Murphy, R. Rai, J. Conner, B. E. White, S. Venkatesan	2006	28
6	Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition Journal of Applied Physics ·Dina H. Triyoso, R. I. Hegde, Stefan Zollner, Michael Ramon, S. Kalpat, R. Gregory, Augusto Iglesias, Jian Jiang, M. Raymond, R. Rai, D. Werho, D. Roan, B. E. White, Philip J. Tobin	2005	72
7	Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II IEEE Transactions on Electron Devices ·C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik, V. Dhandapani, S. Samavedam, W. Taylor, J. M. Grant, Laurynas Šedvydis, Dina H. Triyoso, R. I. Hegde, D. C. Gilmer, R. Garcia, D. Roan, M. L. Lovejoy, R. Rai, E.A. Hebert, H.‐H. Tseng, S.G.H. Anderson, B. E. White, P.J. Tobin	2004	135
8	Fermi level pinning at the polySi/metal oxide interface Chris Hobbs, L.M. Fonseca, V. Dhandapani, S. Samavedam, B. Taylor, Jennifer E. Grant, Laurynas Šedvydis, Dina H. Triyoso, R. I. Hegde, D. C. Gilmer, R. Garcia, D. Roan, Margret Graf-Fuchs, R. Rai, Kouichi Kotaki, H.‐H. Tseng, Bruce White, Philip J. Tobin	2004	74
9	Multi gated device architectures advances, advantages and challenges L. Mathew, Yang Du, Aaron Thean, M. Sadd, A. Vandooren, C. Parker, ラリーフェネル, PJ Freiden, R. Rai, Ana María Miranda Zavala, R. Christopher C. Hild, Joomyung Jang, J.B. Hughes, Yoshiyuki Yamada, S. Jallepalli, G.O. Workman, B. E. White, Bich-Yen Nguyen, Ana Soliz Landivar de Stange	2004	0
10	Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I IEEE Transactions on Electron Devices ·C. C. Hobbs, L. R. C. Fonseca, A. A. Knizhnik, V. Dhandapani, S. Samavedam, W. Taylor, J. M. Grant, Laurynas Šedvydis, Dina H. Triyoso, R. I. Hegde, D. C. Gilmer, R. Garcia, D. Roan, M. L. Lovejoy, R. Rai, E.A. Hebert, H.‐H. Tseng, S.G.H. Anderson, B. E. White, P.J. Tobin	2004	182
11	Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Dina H. Triyoso, R. I. Hegde, Jennifer E. Grant, Peter Fejes, Clare Smith, D. Roan, M. Ramón, D. Werho, R. Rai, L.B. La, J. Baker, Cristina Garza, Sang Tae Lee, B. E. White, Philip J. Tobin	2004	56
12	HfO[sub 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium Journal of The Electrochemical Society ·Юсеф Н.Ю., N. V. Edwards, José Miguel Carrasco Gimeno, D. Roan, SA Feldman, R. Gregory, J. Kulik, Guo Haifen, (unknown), 应立娟, Stefan Zollner, Philip J. Tobin, Bich-Yen Nguyen, R. Nieh, M. Ramón, V. Ramgopal Rao, R. I. Hegde, R. Rai, J. Baker, Yano Gen	2003	53
13	Compatibility of silicon gates with hafnium-based gate dielectrics Microelectronic Engineering ·D. C. Gilmer, R. I. Hegde, John P. Worgan, James A. Smith, Laurynas Šedvydis, R. Garcia, V. Dhandapani, Dina H. Triyoso, D. Roan, Alexander Franke, R. Rai, L. Prabhu, C. Hobbs, J. M. Grant, L.B. La, S. Samavedam, B. Taylor, H.‐H. Tseng, Philip J. Tobin	2003	21
14	Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics Applied Physics Letters ·D. C. Gilmer, R. I. Hegde, John P. Worgan, R. Garcia, V. Dhandapani, Dina H. Triyoso, D. Roan, Alexander Franke, R. Rai, L. Prabhu, C. Hobbs, J. M. Grant, L.B. La, S. Samavedam, B. Taylor, H.‐H. Tseng, Philip J. Tobin	2002	64
15	Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO₂ Gate Dielectric MRS Proceedings ·S. Samavedam, J. Schaeffer, D. C. Gilmer, V. Dhandapani, Philip J. Tobin, J. Mogab, B.-Y. Nguyen, Thuy Rotunda, R. Rai, Kawi Boedisetio, R. Martín, M. V. Raymond, Ana María Miranda Zavala, L.B. La, James A. Smith, R. Gregory	2002	4
16	Angled Plan View FIB Sample Preparation for Accurate via Sidewall Measurements Microscopy and Microanalysis ·J. Conner, L. Prabhu, Assaf Y. Anderson, S. Bagchi, R. Rai, Mukhtar Nur Farihan, Diana Ribeiro Guimarães	2001	2
17	Characterization of InGaAs/ALGaAs/GaAs heteroepitaxial structures by transmission electron microscopy and energy dispersive spectroscopy Progress in Crystal Growth and Characterization of Materials ·R. Rai, Graziella Rusca, W. E. Quinn, 汪宏儿	1993	2

About R. Rai

R. Rai is a scholar working on Structural Biology, Electrical and Electronic Engineering, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 17 papers that have together received 761 indexed citations. Recurring topics across this work include Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers), Ferroelectric and Negative Capacitance Devices (6 papers), Electronic and Structural Properties of Oxides (3 papers), Advancements in Photolithography Techniques (1 paper), Advanced Surface Polishing Techniques (1 paper) and Interconnection Networks and Systems (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (736 citations), Materials Chemistry (255 citations), Atomic and Molecular Physics, and Optics (116 citations), Electronic, Optical and Magnetic Materials (53 citations) and Surfaces, Coatings and Films (12 citations). R. Rai has collaborated with scholars based in United States, India and France. Frequent co-authors include R. I. Hegde, D. Roan, Dina H. Triyoso, B. E. White, S. Samavedam, H.‐H. Tseng, R. Garcia, V. Dhandapani, D. C. Gilmer and Philip J. Tobin. Their work appears in journals such as Journal of The Electrochemical Society, IEEE Transactions on Electron Devices, Materials Chemistry and Physics, Microelectronic Engineering and Microscopy and Microanalysis.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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