Tarun Agarwal

502 total citations
30 papers, 274 citations indexed

About

Tarun Agarwal is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Tarun Agarwal has authored 30 papers receiving a total of 274 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 17 papers in Materials Chemistry and 5 papers in Biomedical Engineering. Recurrent topics in Tarun Agarwal's work include Advancements in Semiconductor Devices and Circuit Design (12 papers), Graphene research and applications (11 papers) and 2D Materials and Applications (11 papers). Tarun Agarwal is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (12 papers), Graphene research and applications (11 papers) and 2D Materials and Applications (11 papers). Tarun Agarwal collaborates with scholars based in Belgium, India and Switzerland. Tarun Agarwal's co-authors include Iuliana Radu, Marc Heyns, Wim Dehaene, Praveen Raghavan, Dennis Lin, Gianluca Fiori, Bart Sorée, Mathieu Luisier, Anh Khoa Augustin Lu and Giuseppe Iannaccone and has published in prestigious journals such as Applied Physics Letters, Scientific Reports and IEEE Transactions on Electron Devices.

In The Last Decade

Tarun Agarwal

28 papers receiving 262 citations

Peers

Countries citing papers authored by Tarun Agarwal

Since Specialization

Citations

This map shows the geographic impact of Tarun Agarwal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tarun Agarwal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tarun Agarwal more than expected).

Fields of papers citing papers by Tarun Agarwal

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tarun Agarwal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tarun Agarwal. The network helps show where Tarun Agarwal may publish in the future.

Co-authorship network of co-authors of Tarun Agarwal

This figure shows the co-authorship network connecting the top 25 collaborators of Tarun Agarwal. A scholar is included among the top collaborators of Tarun Agarwal based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tarun Agarwal. Tarun Agarwal is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Type-II band-alignment in vertical transition metal-di-chalcogenide heterostructures for near infrared and visible light detection 2025 ·Physica Scripta ·Mubashir A. Kharadi, Tarun Agarwal, Ibrahim Mahariq, (unknown)	0
2	Superconducting ground state study of the valence-skipped compound AgSnSe2 2023 ·Physical review. B. ·(unknown), (unknown), (unknown), Tarun Agarwal, (unknown), J. Beare, Sungwon Yoon, Yipeng Cai, Kenji Kojima, G. M. Luke, R. P. Singh	2
3	Radio Frequency Performance of High Mobility 2D Monolayer Au₂S-based Transistors 2023 ·(unknown), Jiang Cao, (unknown), Mathieu Luisier, Tarun Agarwal	1
4	Two-dimensional multigap superconductivity in bulk 2H−TaSeS 2022 ·Physical review. B. ·(unknown), Tarun Agarwal, (unknown), R. P. Singh	11
5	Ab initio quantum transport simulations of defective devices based on 2-D materials via a projected-GW approach 2022 ·2022 International Electron Devices Meeting (IEDM) ·(unknown), Jiang Cao, Tarun Agarwal, Mathieu Luisier, (unknown)	2
6	A MOS capacitor model for ultra-thin 2D semiconductors: the impact of interface defects and channel resistance 2020 ·2D Materials ·Abhinav Gaur, Tarun Agarwal, Inge Asselberghs, Iuliana Radu, Marc Heyns, Dennis Lin	19
7	Performance Comparison of s-Si, In_0.53Ga_0.47As, Monolayer BP, and WS₂-Based n-MOSFETs for Future Technology Nodes—Part I: Device-Level Comparison 2019 ·IEEE Transactions on Electron Devices ·Tarun Agarwal, Martin Rau, Iuliana Radu, Mathieu Luisier, Wim Dehaene, Marc Heyns	3
8	Tunneling Transistors Based on MoS₂/MoTe₂ Van der Waals Heterostructures 2018 ·IEEE Journal of the Electron Devices Society ·Yashwanth Balaji, D. Mocuta, G. Groeseneken, (unknown), César Javier Lockhart de la Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis Lin, Cedric Huyghebaert, Iuliana Radu	38
9	Material-Device-Circuit Co-Design of 2-D Materials-Based Lateral Tunnel FETs 2018 ·IEEE Journal of the Electron Devices Society ·Tarun Agarwal, Gianluca Fiori, Bart Sorée, Iuliana Radu, Marc Heyns, Wim Dehaene	8
10	Material-Device-Circuit Co-optimization of 2D Material based FETs for Ultra-Scaled Technology Nodes 2017 ·Scientific Reports ·Tarun Agarwal, Bart Sorée, Iuliana Radu, Praveen Raghavan, Giuseppe Iannaccone, Gianluca Fiori, Wim Dehaene, Marc Heyns	14
11	Material selection and device design guidelines for two-dimensional materials based TFETs 2017 ·CINECA IRIS Institutial research information system (University of Pisa) ·Tarun Agarwal, Bart Sorée, Iuliana Radu, Praveen Raghavan, Gianluca Fiori, Marc Heyns, Wim Dehaene	2
12	Scaling trends and performance evaluation of 2-dimensional polarity-controllable FETs 2017 ·Scientific Reports ·Giovanni V. Resta, Tarun Agarwal, Dennis Lin, Iuliana Radu, Francky Catthoor, Pierre‐Emmanuel Gaillardon, Giovanni De Micheli	15
13	Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study 2016 ·Applied Physics Letters ·Anh Khoa Augustin Lu, Geoffrey Pourtois, Tarun Agarwal, Aryan Afzalian, Iuliana Radu, Michel Houssa	5
14	Benchmarking of MoS₂FETs With Multigate Si-FET Options for 5 nm and Beyond 2015 ·IEEE Transactions on Electron Devices ·Tarun Agarwal, Dmitry Yakimets, Praveen Raghavan, Iuliana Radu, Aaron Thean, Marc Heyns, Wim Dehaene	28
15	Chemically enhanced double-gate bilayer graphene field-effect transistor with neutral channel for logic applications 2014 ·Nanotechnology ·Amirhasan Nourbakhsh, Tarun Agarwal, Alexander Klekachev, Inge Asselberghs, Mirco Cantoro, Cedric Huyghebaert, Marc Heyns, Marian Verhelst, Aaron Thean, Stefan De Gendt	6
16	Bilayer Graphene Tunneling FET for Sub-0.2 V Digital CMOS Logic Applications 2014 ·IEEE Electron Device Letters ·Tarun Agarwal, Amirhasan Nourbakhsh, Praveen Raghavan, Iuliana Radu, Stefan De Gendt, Marc Heyns, Marian Verhelst, (unknown)	9
17	A dc model for partially depleted SOI laterally diffused MOSFETs utilizing the HiSIM-HV compact model 2013 ·Journal of Computational Electronics ·Tarun Agarwal, M. Jagadesh Kumar	2
18	Performance Analysis of Cognitive Radio Multiple-Access Channels Over Dynamic Fading Environments 2011 ·Wireless Personal Communications ·Khalid Qaraqe, Sabit Ekin, Tarun Agarwal, Erchin Serpedin	4
19	Performance comparison of static CMOS and MCML gates in sub-threshold region of operation for 32nm CMOS technology 2008 ·Tarun Agarwal, (unknown), (unknown), Mohd. Hasan	10
20	Dynamic tuning of the maximum contention window (CWmax) for enhanced service differentiation in IEEE 802.11 wireless ad-hoc networks 2005 ·(unknown), (unknown), Tarun Agarwal	22

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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