Inge Asselberghs

9.4k total citations · 1 hit paper
220 papers, 7.6k citations indexed

About

Inge Asselberghs is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Inge Asselberghs has authored 220 papers receiving a total of 7.6k indexed citations (citations by other indexed papers that have themselves been cited), including 119 papers in Materials Chemistry, 114 papers in Electronic, Optical and Magnetic Materials and 87 papers in Electrical and Electronic Engineering. Recurrent topics in Inge Asselberghs's work include Nonlinear Optical Materials Research (109 papers), 2D Materials and Applications (43 papers) and Graphene research and applications (37 papers). Inge Asselberghs is often cited by papers focused on Nonlinear Optical Materials Research (109 papers), 2D Materials and Applications (43 papers) and Graphene research and applications (37 papers). Inge Asselberghs collaborates with scholars based in Belgium, United States and United Kingdom. Inge Asselberghs's co-authors include Koen Clays, André Persoons, Benjamin J. Coe, Cedric Huyghebaert, Bruce S. Brunschwig, J. Arthur Harris, Iuliana Radu, Stephan Houbrechts, Thierry Verbiest and Mark G. Humphrey and has published in prestigious journals such as Journal of the American Chemical Society, Advanced Materials and Angewandte Chemie International Edition.

In The Last Decade

Inge Asselberghs

218 papers receiving 7.5k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Transistors based on two-dimensional materials for future integrated circuits

2021 650 citations Saptarshi Das, Amritanand Sebastian et al. Nature Electronics profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
Inge Asselberghs	4.3k	3.2k	2.3k	1.7k	1.7k	220	7.6k
Chantal Andraud	5.8k 1.3×	2.2k 0.7×	1.1k 0.5×	1.3k 0.8×	2.8k 1.6×	255	8.3k
Isabelle Ledoux	4.4k 1.0×	5.2k 1.6×	1.1k 0.5×	2.6k 1.5×	1.5k 0.9×	151	8.6k
Keitaro Nakatani	4.8k 1.1×	3.7k 1.2×	884 0.4×	2.3k 1.3×	799 0.5×	168	7.9k
Ayhan Elmalı	2.6k 0.6×	1.7k 0.5×	927 0.4×	1.1k 0.6×	1.5k 0.9×	299	4.9k
Julia A. Weinstein	3.2k 0.7×	950 0.3×	1.6k 0.7×	1.7k 1.0×	827 0.5×	120	5.8k
Chin‐Ti Chen	5.6k 1.3×	1.5k 0.5×	5.7k 2.5×	1.6k 0.9×	986 0.6×	191	9.4k
Concepció Rovira	5.1k 1.2×	6.1k 1.9×	5.5k 2.4×	2.8k 1.6×	980 0.6×	385	13.0k
Kunio Awaga	5.6k 1.3×	5.5k 1.7×	3.1k 1.3×	1.4k 0.8×	565 0.3×	330	10.2k
Rajadurai Chandrasekar	3.2k 0.7×	1.4k 0.4×	2.3k 1.0×	741 0.4×	1.1k 0.7×	142	5.3k
Tamotsu Inabe	3.8k 0.9×	3.6k 1.1×	2.2k 1.0×	1.2k 0.7×	368 0.2×	270	7.0k

Countries citing papers authored by Inge Asselberghs

Since Specialization

Citations

This map shows the geographic impact of Inge Asselberghs's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Inge Asselberghs with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Inge Asselberghs more than expected).

Fields of papers citing papers by Inge Asselberghs

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Inge Asselberghs. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Inge Asselberghs. The network helps show where Inge Asselberghs may publish in the future.

Co-authorship network of co-authors of Inge Asselberghs

This figure shows the co-authorship network connecting the top 25 collaborators of Inge Asselberghs. A scholar is included among the top collaborators of Inge Asselberghs based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Inge Asselberghs. Inge Asselberghs is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Iakoubovskii, Konstantin, et al.. (2025). Energy band alignment in MoS2/HfO2: Transfer-related artifacts and interfacial effects. Journal of Applied Physics. 137(24). 1 indexed citations

Kerkhof, Mark van de, Henry Medina, P. Morin, et al.. (2024). Advanced EUV patterning of 2D TMDs for CMOS integration. 47–47.

Ghosh, Souvik, Quentin Smets, T. Schram, et al.. (2024). EOT Scaling Via 300mm MX2 Dry Transfer - Steps Toward a Manufacturable Process Development and Device Integration. 1–2. 2 indexed citations

Zografos, Odysseas, Mohit Gupta, V.D. Nguyen, et al.. (2024). Benchmarking of Scaled Majority-Logic-Synthesized Spintronic Circuits Based on Magnetic Tunnel Junction Transducers. IEEE Transactions on Circuits and Systems I Regular Papers. 72(1). 135–142. 1 indexed citations

Wu, Xiangyu, Daire Cott, Yuanyuan Shi, et al.. (2024). Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides. ACS Applied Electronic Materials. 6(6). 4213–4222. 4 indexed citations

Minj, Albert, Ankit Nalin Mehta, Thomas Hantschel, et al.. (2024). Direct Assessment of Defective Regions in Monolayer MoS₂ Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements. ACS Nano. 18(15). 10653–10666. 2 indexed citations

Brems, Steven, Didit Yudistira, Joris Van Campenhout, et al.. (2024). Graphene-Based Silicon Photonic Electro-Absorption Modulators and Phase Modulators. IEEE Journal of Selected Topics in Quantum Electronics. 30(4: Adv. Mod. and Int. beyond Si). 1–11. 3 indexed citations

Schram, T., Surajit Sutar, Iuliana Radu, & Inge Asselberghs. (2022). Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits. Advanced Materials. 34(48). e2109796–e2109796. 50 indexed citations

Marinov, Daniil, Jean‐François de Marneffe, Quentin Smets, et al.. (2021). Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers. npj 2D Materials and Applications. 5(1). 35 indexed citations

10.

Das, Saptarshi, Amritanand Sebastian, Eric Pop, et al.. (2021). Transistors based on two-dimensional materials for future integrated circuits. Nature Electronics. 4(11). 786–799. 650 indexed citations breakdown →

11.

Iakoubovskii, Konstantin, Abhinav Gaur, Dennis Lin, et al.. (2021). Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra. Journal of Applied Physics. 129(15). 8 indexed citations

12.

Asselberghs, Inge, Cedric Huyghebaert, Iuliana Radu, et al.. (2021). Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures. Journal of Physics D Applied Physics. 54(29). 295101–295101. 2 indexed citations

13.

Wan, Danny, T. Devolder, Kévin Garello, et al.. (2021). Nanoscale domain wall devices with magnetic tunnel junction read and write. Nature Electronics. 4(6). 392–398. 65 indexed citations

14.

Shi, Yuanyuan, Benjamin Groven, Xiangyu Wu, et al.. (2021). Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics. ACS Nano. 15(6). 9482–9494. 38 indexed citations

15.

Schram, T., Quentin Smets, D. Radisic, et al.. (2021). High yield and process uniformity for 300 mm integrated WS 2 FETs. Symposium on VLSI Technology. 1–2. 9 indexed citations

16.

Asselberghs, Inge, Steven Brems, Cedric Huyghebaert, et al.. (2020). 5 × 25 Gbit/s WDM transmitters based on passivated graphene–silicon electro-absorption modulators. Applied Optics. 59(4). 1156–1156. 12 indexed citations

17.

Asselberghs, Inge, Steven Brems, Cedric Huyghebaert, et al.. (2020). High speed graphene-silicon electro-absorption modulators for the O-band and C-band. Japanese Journal of Applied Physics. 59(5). 52008–52008. 7 indexed citations

18.

Sutar, Surajit, Inge Asselberghs, Dennis Lin, Aaron Thean, & Iuliana Radu. (2017). FETs on 2-D Materials: Deconvolution of the Channel and Contact Characteristics by Four-Terminal Resistance Measurements on WSe₂Transistors. IEEE Transactions on Electron Devices. 64(7). 2970–2976. 4 indexed citations

19.

Chiappe, Daniele, Massimo Mongillo, Inge Asselberghs, et al.. (2016). Demonstration of Direction Dependent Conduction through MoS₂Films Prepared by Tunable Mass Transport Fabrication. ECS Journal of Solid State Science and Technology. 5(11). Q3046–Q3049. 5 indexed citations

20.

Mongillo, Massimo, Daniele Chiappe, Goutham Arutchelvan, et al.. (2016). Transport properties of chemically synthesized MoS2 – Dielectric effects and defects scattering. Applied Physics Letters. 109(23). 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact