Inge Asselberghs

9.4k total citations · 1 hit paper
220 papers, 7.6k citations indexed

About

Inge Asselberghs is a scholar working on Materials Chemistry, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Inge Asselberghs has authored 220 papers receiving a total of 7.6k indexed citations (citations by other indexed papers that have themselves been cited), including 119 papers in Materials Chemistry, 114 papers in Electronic, Optical and Magnetic Materials and 87 papers in Electrical and Electronic Engineering. Recurrent topics in Inge Asselberghs's work include Nonlinear Optical Materials Research (109 papers), 2D Materials and Applications (43 papers) and Graphene research and applications (37 papers). Inge Asselberghs is often cited by papers focused on Nonlinear Optical Materials Research (109 papers), 2D Materials and Applications (43 papers) and Graphene research and applications (37 papers). Inge Asselberghs collaborates with scholars based in Belgium, United States and United Kingdom. Inge Asselberghs's co-authors include Koen Clays, André Persoons, Benjamin J. Coe, Cedric Huyghebaert, Bruce S. Brunschwig, J. Arthur Harris, Iuliana Radu, Stephan Houbrechts, Thierry Verbiest and Mark G. Humphrey and has published in prestigious journals such as Journal of the American Chemical Society, Advanced Materials and Angewandte Chemie International Edition.

In The Last Decade

Inge Asselberghs

218 papers receiving 7.5k citations

Hit Papers

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What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Transistors based on two-dimensional materials for future integrated circuits

2021 650 citations Saptarshi Das, Amritanand Sebastian et al. Nature Electronics profile →

Peers

Countries citing papers authored by Inge Asselberghs

Since Specialization

Citations

This map shows the geographic impact of Inge Asselberghs's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Inge Asselberghs with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Inge Asselberghs more than expected).

Fields of papers citing papers by Inge Asselberghs

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Inge Asselberghs. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Inge Asselberghs. The network helps show where Inge Asselberghs may publish in the future.

Co-authorship network of co-authors of Inge Asselberghs

This figure shows the co-authorship network connecting the top 25 collaborators of Inge Asselberghs. A scholar is included among the top collaborators of Inge Asselberghs based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Inge Asselberghs. Inge Asselberghs is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Energy band alignment in MoS2/HfO2: Transfer-related artifacts and interfacial effects 2025 ·Journal of Applied Physics ·(unknown), Konstantin Iakoubovskii, Dennis Lin, Inge Asselberghs, Abhinav Gaur, (unknown), Valeri Afanasiev	1
2	Advanced EUV patterning of 2D TMDs for CMOS integration 2024 ·(unknown), (unknown), (unknown), (unknown), (unknown), Mark van de Kerkhof, (unknown), Henry Medina, P. Morin, Inge Asselberghs, (unknown), Kevin P. O’Brien, K. Maxey, Uygar E. Avci	0
3	EOT Scaling Via 300mm MX2 Dry Transfer - Steps Toward a Manufacturable Process Development and Device Integration 2024 ·Souvik Ghosh, (unknown), Quentin Smets, T. Schram, (unknown), (unknown), Vikram S. Turkani, Benjamin Groven, (unknown), (unknown), Thomas Uhrmann, Markus Wimplinger, Inge Asselberghs, César Javier Lockhart de la Rosa, Steven Brems, Gouri Sankar Kar	2
4	Benchmarking of Scaled Majority-Logic-Synthesized Spintronic Circuits Based on Magnetic Tunnel Junction Transducers 2024 ·IEEE Transactions on Circuits and Systems I Regular Papers ·(unknown), (unknown), Odysseas Zografos, Mohit Gupta, V.D. Nguyen, Giovanni De Micheli, Sorin Cotöfană, Inge Asselberghs, Christoph Adelmann, Gouri Sankar Kar, Sébastien Couet, Florin Ciubotaru	1
5	Graphene-Based Silicon Photonic Electro-Absorption Modulators and Phase Modulators 2024 ·IEEE Journal of Selected Topics in Quantum Electronics ·(unknown), (unknown), Steven Brems, Didit Yudistira, Joris Van Campenhout, Inge Asselberghs, Cedric Huyghebaert, Marianna Pantouvaki, Zheng Wang, Dries Van Thourhout	3
6	Direct Assessment of Defective Regions in Monolayer MoS₂ Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements 2024 ·ACS Nano ·Albert Minj, (unknown), (unknown), Ankit Nalin Mehta, (unknown), Thomas Hantschel, Inge Asselberghs, Ludovic Goux, Gouri Sankar Kar, Marc Heyns, Dennis Lin	2
7	Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits 2022 ·Advanced Materials ·T. Schram, Surajit Sutar, Iuliana Radu, Inge Asselberghs	50
8	Transistors based on two-dimensional materials for future integrated circuits breakdown → 2021 ·Nature Electronics ·Saptarshi Das, Amritanand Sebastian, Eric Pop, Connor J. McClellan, Aaron D. Franklin, Tibor Grasser, Theresia Knobloch, Yu. Yu. Illarionov, Ashish Verma Penumatcha, Joerg Appenzeller, Zhihong Chen, Wenjuan Zhu, Inge Asselberghs, Lain‐Jong Li, Uygar E. Avci, Navakanta Bhat, Thomas D. Anthopoulos, Rajendra Singh	650
9	Nanoscale domain wall devices with magnetic tunnel junction read and write 2021 ·Nature Electronics ·(unknown), (unknown), Danny Wan, T. Devolder, Kévin Garello, Laurent Souriau, (unknown), D. Tsvetanova, (unknown), Dmitri E. Nikonov, Ian A. Young, Marc Heyns, Bart Sorée, Inge Asselberghs, Iuliana Radu, Sébastien Couet, V.D. Nguyen	65
10	Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra 2021 ·Journal of Applied Physics ·(unknown), Konstantin Iakoubovskii, (unknown), Abhinav Gaur, Dennis Lin, Inge Asselberghs, Iuliana Radu, J. W. Chai, Ming Yang, Shijie Wang, Michel Houssa, A. Stesmans, V. V. Afanas’ev	8
11	Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures 2021 ·Journal of Physics D Applied Physics ·(unknown), (unknown), (unknown), Inge Asselberghs, Cedric Huyghebaert, Iuliana Radu, (unknown), Ming Yang, Shijie Wang, Ageeth A. Bol, Konstantin Iakoubovskii, Michel Houssa, A. Stesmans, V. V. Afanas’ev	2
12	Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics 2021 ·ACS Nano ·Yuanyuan Shi, Benjamin Groven, (unknown), Xiangyu Wu, Ankit Nalin Mehta, Albert Minj, Stefanie Sergeant, (unknown), Inge Asselberghs, Dennis Lin, Steven Brems, Cedric Huyghebaert, P. Morin, Iuliana Radu, Matty Caymax	38
13	Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers 2021 ·npj 2D Materials and Applications ·Daniil Marinov, Jean‐François de Marneffe, Quentin Smets, Goutham Arutchelvan, Kristof M. Bal, Е. Н. Воронина, Т. В. Рахимова, Yu. A. Mankelevich, Salim El Kazzi, Ankit Nalin Mehta, (unknown), Markus Heyne, (unknown), Patrick C. With, (unknown), Erik C. Neyts, Inge Asselberghs, Dennis Lin, Stefan De Gendt	35
14	Scaling synthetic WS2 dual-gate MOS devices towards sub-nm CET 2021 ·Symposium on VLSI Technology ·Dennis Lin, Xiangyu Wu, Daire Cott, Benjamin Groven, P. Morin, Devin Verreck, Surajit Sutar, Inge Asselberghs, Iuliana Radu	2
15	High speed graphene-silicon electro-absorption modulators for the O-band and C-band 2020 ·Japanese Journal of Applied Physics ·(unknown), Inge Asselberghs, Steven Brems, Cedric Huyghebaert, Joris Van Campenhout, Dries Van Thourhout, Marianna Pantouvaki	7
16	5 × 25 Gbit/s WDM transmitters based on passivated graphene–silicon electro-absorption modulators 2020 ·Applied Optics ·(unknown), Inge Asselberghs, Steven Brems, Cedric Huyghebaert, Joris Van Campenhout, Dries Van Thourhout, Marianna Pantouvaki	12
17	FETs on 2-D Materials: Deconvolution of the Channel and Contact Characteristics by Four-Terminal Resistance Measurements on WSe₂Transistors 2017 ·IEEE Transactions on Electron Devices ·Surajit Sutar, Inge Asselberghs, Dennis Lin, Aaron Thean, Iuliana Radu	4
18	Demonstration of Direction Dependent Conduction through MoS₂Films Prepared by Tunable Mass Transport Fabrication 2016 ·ECS Journal of Solid State Science and Technology ·Daniele Chiappe, Massimo Mongillo, Inge Asselberghs, Salim El Kazzi, Matty Caymax, Kathy Barla, Stefan De Gendt, Iuliana Radu, Cedric Huyghebaert	5
19	Transport properties of chemically synthesized MoS2 – Dielectric effects and defects scattering 2016 ·Applied Physics Letters ·Massimo Mongillo, Daniele Chiappe, Goutham Arutchelvan, Inge Asselberghs, (unknown), Mauricio Manfrini, Dennis Lin, Cedric Huyghebaert, Iuliana Radu	11
20	Multi-layer graphene interconnect - a feasibility study 2016 ·(unknown), Xiangyu Wu, (unknown), Bart Sorée, Cedric Huyghebaert, Dennis Lin, Iuliana Radu, Zsolt Tökei, Inge Asselberghs	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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